ATE488865T1 - Waferboot und verfahren zur herstellung eines rutschsicheren waferboots - Google Patents

Waferboot und verfahren zur herstellung eines rutschsicheren waferboots

Info

Publication number
ATE488865T1
ATE488865T1 AT02741833T AT02741833T ATE488865T1 AT E488865 T1 ATE488865 T1 AT E488865T1 AT 02741833 T AT02741833 T AT 02741833T AT 02741833 T AT02741833 T AT 02741833T AT E488865 T1 ATE488865 T1 AT E488865T1
Authority
AT
Austria
Prior art keywords
wafer
wafer boat
slip
producing
contact surface
Prior art date
Application number
AT02741833T
Other languages
English (en)
Inventor
Richard Hengst
Original Assignee
Saint Gobain Ceramics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Ceramics filed Critical Saint Gobain Ceramics
Application granted granted Critical
Publication of ATE488865T1 publication Critical patent/ATE488865T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/12—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/12—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H10P72/123—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterised by a material, a roughness, a coating or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/12—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H10P72/127—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterised by the substrate support

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Packaging Frangible Articles (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT02741833T 2001-06-19 2002-06-05 Waferboot und verfahren zur herstellung eines rutschsicheren waferboots ATE488865T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/884,720 US20020130061A1 (en) 2000-11-02 2001-06-19 Apparatus and method of making a slip free wafer boat
PCT/US2002/017654 WO2002103759A1 (en) 2001-06-19 2002-06-05 Apparatus and method of making a slip free wafer boat

Publications (1)

Publication Number Publication Date
ATE488865T1 true ATE488865T1 (de) 2010-12-15

Family

ID=25385235

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02741833T ATE488865T1 (de) 2001-06-19 2002-06-05 Waferboot und verfahren zur herstellung eines rutschsicheren waferboots

Country Status (8)

Country Link
US (1) US20020130061A1 (de)
EP (1) EP1405333B1 (de)
JP (1) JP2004531891A (de)
KR (1) KR100578709B1 (de)
CN (1) CN100350551C (de)
AT (1) ATE488865T1 (de)
DE (1) DE60238324D1 (de)
WO (1) WO2002103759A1 (de)

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US20030233977A1 (en) * 2002-06-20 2003-12-25 Yeshwanth Narendar Method for forming semiconductor processing components
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US6825123B2 (en) * 2003-04-15 2004-11-30 Saint-Goban Ceramics & Plastics, Inc. Method for treating semiconductor processing components and components formed thereby
US20050145584A1 (en) * 2004-01-06 2005-07-07 Buckley Richard F. Wafer boat with interference fit wafer supports
US7501370B2 (en) 2004-01-06 2009-03-10 Saint-Gobain Ceramics & Plastics, Inc. High purity silicon carbide wafer boats
US20050205502A1 (en) * 2004-03-18 2005-09-22 Brown Steven A Rails for semiconductor wafer carriers
JP2005340480A (ja) * 2004-05-26 2005-12-08 Nippon Oil Corp 基板カセット用サポートバー
TWI248909B (en) * 2004-10-12 2006-02-11 Au Optronics Corp A cassette for placing multiple-sized substrate
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US20070029227A1 (en) * 2005-07-08 2007-02-08 Bonora Anthony C Workpiece support structures and apparatus for accessing same
US7828158B2 (en) * 2005-07-14 2010-11-09 Displays Plus, Inc. Merchandise dispensing apparatus providing theft deterrence
KR101165466B1 (ko) * 2005-08-31 2012-07-13 엘지디스플레이 주식회사 캐리어 및 이를 구비한 공정 장치
TWD119911S1 (zh) * 2006-05-01 2007-11-11 東京威力科創股份有限公司 晶舟
TWD119910S1 (zh) * 2006-05-01 2007-11-11 東京威力科創股份有限公司 晶舟
US7547897B2 (en) * 2006-05-26 2009-06-16 Cree, Inc. High-temperature ion implantation apparatus and methods of fabricating semiconductor devices using high-temperature ion implantation
EP1863079B1 (de) * 2006-06-02 2011-08-10 Rohm and Haas Electronic Materials, L.L.C. Vorrichtung mit Verbindungen mit ausgebuchtetem Radius
US20080041798A1 (en) * 2006-06-30 2008-02-21 Memc Electronic Materials, Inc. Wafer Platform
TWD130137S1 (zh) * 2006-10-25 2009-08-01 東京威力科創股份有限公司 晶舟
US8058174B2 (en) * 2007-12-20 2011-11-15 Coorstek, Inc. Method for treating semiconductor processing components and components formed thereby
KR101039151B1 (ko) 2008-12-23 2011-06-07 주식회사 테라세미콘 보트
US9153466B2 (en) * 2012-04-26 2015-10-06 Asm Ip Holding B.V. Wafer boat
TWD161688S (zh) * 2012-12-27 2014-07-11 日立國際電氣股份有限公司 半導體製造裝置用晶舟
TWD166332S (zh) * 2013-03-22 2015-03-01 日立國際電氣股份有限公司 基板處理裝置用晶舟之部分
TWD163542S (zh) * 2013-03-22 2014-10-11 日立國際電氣股份有限公司 基板處理裝置用晶舟
JP1537312S (de) * 2014-11-20 2015-11-09
JP1537630S (de) * 2014-11-20 2015-11-09
JP1537313S (de) * 2014-11-20 2015-11-09
JP6322159B2 (ja) * 2015-06-10 2018-05-09 クアーズテック株式会社 ウエハボート及びその製造方法
JP1563649S (de) * 2016-02-12 2016-11-21
CN110071064A (zh) * 2018-01-22 2019-07-30 上海新昇半导体科技有限公司 一种改善外延片污染印记的方法
JP7030604B2 (ja) * 2018-04-19 2022-03-07 三菱電機株式会社 ウエハボートおよびその製造方法
USD846514S1 (en) * 2018-05-03 2019-04-23 Kokusai Electric Corporation Boat of substrate processing apparatus
USD847105S1 (en) * 2018-05-03 2019-04-30 Kokusai Electric Corporation Boat of substrate processing apparatus
USD908103S1 (en) * 2019-02-20 2021-01-19 Veeco Instruments Inc. Transportable semiconductor wafer rack
USD908102S1 (en) * 2019-02-20 2021-01-19 Veeco Instruments Inc. Transportable semiconductor wafer rack
CN110211914A (zh) * 2019-07-11 2019-09-06 中威新能源(成都)有限公司 一种半导体制品的承载方法、传输方法、制造方法及其用途
WO2022009430A1 (ja) * 2020-07-10 2022-01-13 ミライアル株式会社 基板収納容器
US12087605B2 (en) * 2020-09-30 2024-09-10 Gudeng Precision Industrial Co., Ltd. Reticle pod with antistatic capability
TWI751806B (zh) * 2020-11-25 2022-01-01 松勁科技股份有限公司 立式爐管及用於其之立式晶舟
WO2023168663A1 (en) 2022-03-10 2023-09-14 Innoscience (suzhou) Semiconductor Co., Ltd. Wafer holder and operating method thereof
JP1741513S (de) * 2022-09-14 2023-04-11
JP1741512S (de) * 2022-09-14 2023-04-11

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US3951587A (en) * 1974-12-06 1976-04-20 Norton Company Silicon carbide diffusion furnace components
JPH0774839B2 (ja) * 1991-09-30 1995-08-09 東芝セラミックス株式会社 Ｓｏｒ用ミラー
DE4429825C1 (de) * 1994-08-23 1995-11-09 Heraeus Quarzglas Beschichtetes Bauteil aus Quarzglas
WO1996035228A1 (en) * 1995-05-05 1996-11-07 Saint-Gobain Industrial Ceramics, Inc. Slip free vertical rack design
US5904892A (en) * 1996-04-01 1999-05-18 Saint-Gobain/Norton Industrial Ceramics Corp. Tape cast silicon carbide dummy wafer
JPH09306980A (ja) * 1996-05-17 1997-11-28 Asahi Glass Co Ltd 縦型ウエハボート
US5904778A (en) * 1996-07-26 1999-05-18 Applied Materials, Inc. Silicon carbide composite article particularly useful for plasma reactors
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JP3494554B2 (ja) * 1997-06-26 2004-02-09 東芝セラミックス株式会社 半導体用治具およびその製造方法
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Also Published As

Publication number Publication date
EP1405333A4 (de) 2009-05-20
KR100578709B1 (ko) 2006-05-12
CN100350551C (zh) 2007-11-21
WO2002103759A1 (en) 2002-12-27
US20020130061A1 (en) 2002-09-19
EP1405333A1 (de) 2004-04-07
CN1518756A (zh) 2004-08-04
JP2004531891A (ja) 2004-10-14
EP1405333B1 (de) 2010-11-17
DE60238324D1 (de) 2010-12-30
KR20040010727A (ko) 2004-01-31

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Legal Events

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