ATE489733T1 - Zum emittieren mehrerer lichtwellenlängen ausgelegtes halbleiter-leuchtbauelement - Google Patents

Zum emittieren mehrerer lichtwellenlängen ausgelegtes halbleiter-leuchtbauelement

Info

Publication number
ATE489733T1
ATE489733T1 AT07859486T AT07859486T ATE489733T1 AT E489733 T1 ATE489733 T1 AT E489733T1 AT 07859486 T AT07859486 T AT 07859486T AT 07859486 T AT07859486 T AT 07859486T AT E489733 T1 ATE489733 T1 AT E489733T1
Authority
AT
Austria
Prior art keywords
layer
light emitting
strain
relieved
light
Prior art date
Application number
AT07859486T
Other languages
English (en)
Inventor
James C Kim
Sungsoo Yi
Original Assignee
Koninkl Philips Electronics Nv
Philips Lumileds Lighting Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv, Philips Lumileds Lighting Co filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE489733T1 publication Critical patent/ATE489733T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
AT07859486T 2006-12-22 2007-12-20 Zum emittieren mehrerer lichtwellenlängen ausgelegtes halbleiter-leuchtbauelement ATE489733T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/615,601 US20080149946A1 (en) 2006-12-22 2006-12-22 Semiconductor Light Emitting Device Configured To Emit Multiple Wavelengths Of Light
PCT/IB2007/055262 WO2008078297A2 (en) 2006-12-22 2007-12-20 Semiconductor light emitting device configured to emit multiple wavelengths of light

Publications (1)

Publication Number Publication Date
ATE489733T1 true ATE489733T1 (de) 2010-12-15

Family

ID=39387249

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07859486T ATE489733T1 (de) 2006-12-22 2007-12-20 Zum emittieren mehrerer lichtwellenlängen ausgelegtes halbleiter-leuchtbauelement

Country Status (11)

Country Link
US (3) US20080149946A1 (de)
EP (1) EP2095435B1 (de)
JP (1) JP5189106B2 (de)
KR (1) KR101358701B1 (de)
CN (1) CN101675534B (de)
AT (1) ATE489733T1 (de)
BR (1) BRPI0721111A2 (de)
DE (1) DE602007010827D1 (de)
RU (1) RU2009128240A (de)
TW (1) TWI536599B (de)
WO (1) WO2008078297A2 (de)

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US20110079766A1 (en) * 2009-10-01 2011-04-07 Isaac Harshman Wildeson Process for fabricating iii-nitride based nanopyramid leds directly on a metalized silicon substrate
US8692261B2 (en) * 2010-05-19 2014-04-08 Koninklijke Philips N.V. Light emitting device grown on a relaxed layer
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CN108198749A (zh) * 2010-11-04 2018-06-22 皇家飞利浦电子股份有限公司 基于结晶弛豫结构的固态发光器件
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CN103367584B (zh) 2012-03-30 2017-04-05 清华大学 发光二极管及光学元件
CN103367585B (zh) * 2012-03-30 2016-04-13 清华大学 发光二极管
CN103367560B (zh) * 2012-03-30 2016-08-10 清华大学 发光二极管的制备方法
CN103367383B (zh) 2012-03-30 2016-04-13 清华大学 发光二极管
JP6227128B2 (ja) 2013-06-07 2017-11-08 グロ アーベーＧｌｏ Ａｂ マルチカラーｌｅｄ及びその製造方法
US10483319B2 (en) 2014-08-08 2019-11-19 Glo Ab Pixilated display device based upon nanowire LEDs and method for making the same
KR102227771B1 (ko) 2014-08-25 2021-03-16 삼성전자주식회사 나노구조 반도체 발광소자
US9620559B2 (en) 2014-09-26 2017-04-11 Glo Ab Monolithic image chip for near-to-eye display
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FR3105878B1 (fr) * 2019-12-26 2023-10-27 Aledia Dispositif à composants optoélectroniques tridimensionnels pour découpe au laser et procédé de découpe au laser d'un tel dispositif
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Also Published As

Publication number Publication date
KR101358701B1 (ko) 2014-02-07
JP2010514190A (ja) 2010-04-30
EP2095435B1 (de) 2010-11-24
WO2008078297A2 (en) 2008-07-03
US10312404B2 (en) 2019-06-04
US20100264454A1 (en) 2010-10-21
JP5189106B2 (ja) 2013-04-24
US20080149946A1 (en) 2008-06-26
KR20090094162A (ko) 2009-09-03
US9911896B2 (en) 2018-03-06
CN101675534B (zh) 2012-09-05
EP2095435A2 (de) 2009-09-02
DE602007010827D1 (de) 2011-01-05
WO2008078297A3 (en) 2008-10-23
RU2009128240A (ru) 2011-01-27
BRPI0721111A2 (pt) 2014-03-04
US20180175236A1 (en) 2018-06-21
TWI536599B (zh) 2016-06-01
TW200843148A (en) 2008-11-01
CN101675534A (zh) 2010-03-17

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