ATE493755T1 - Siliciumwafer und herstellungsverfahren dafür - Google Patents

Siliciumwafer und herstellungsverfahren dafür

Info

Publication number
ATE493755T1
ATE493755T1 AT08740998T AT08740998T ATE493755T1 AT E493755 T1 ATE493755 T1 AT E493755T1 AT 08740998 T AT08740998 T AT 08740998T AT 08740998 T AT08740998 T AT 08740998T AT E493755 T1 ATE493755 T1 AT E493755T1
Authority
AT
Austria
Prior art keywords
silicon wafer
bmds
less
present
production process
Prior art date
Application number
AT08740998T
Other languages
English (en)
Inventor
Katsuhiko Nakai
Masayuki Fukuda
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Application granted granted Critical
Publication of ATE493755T1 publication Critical patent/ATE493755T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/20—Intrinsic gettering, i.e. thermally inducing defects by using oxygen present in the silicon body
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT08740998T 2007-05-02 2008-05-01 Siliciumwafer und herstellungsverfahren dafür ATE493755T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007121773 2007-05-02
JP2007338842 2007-12-28
PCT/JP2008/058359 WO2008136500A1 (ja) 2007-05-02 2008-05-01 シリコンウエハ及びその製造方法

Publications (1)

Publication Number Publication Date
ATE493755T1 true ATE493755T1 (de) 2011-01-15

Family

ID=39943605

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08740998T ATE493755T1 (de) 2007-05-02 2008-05-01 Siliciumwafer und herstellungsverfahren dafür

Country Status (8)

Country Link
US (1) US8382894B2 (de)
EP (1) EP2144280B1 (de)
JP (1) JP5256195B2 (de)
KR (1) KR101043011B1 (de)
CN (1) CN101675507B (de)
AT (1) ATE493755T1 (de)
DE (1) DE602008004237D1 (de)
WO (1) WO2008136500A1 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5537802B2 (ja) * 2008-12-26 2014-07-02 ジルトロニック アクチエンゲゼルシャフト シリコンウエハの製造方法
US8999864B2 (en) * 2009-06-03 2015-04-07 Global Wafers Japan Co., Ltd. Silicon wafer and method for heat-treating silicon wafer
KR101231412B1 (ko) * 2009-12-29 2013-02-07 실트로닉 아게 실리콘 웨이퍼 및 그 제조 방법
JP2012001379A (ja) * 2010-06-15 2012-01-05 Sharp Corp 太陽電池モジュール、シリコンリボンの製造方法および球状シリコンの製造方法
DE102010034002B4 (de) * 2010-08-11 2013-02-21 Siltronic Ag Siliciumscheibe und Verfahren zu deren Herstellung
JP5764937B2 (ja) * 2011-01-24 2015-08-19 信越半導体株式会社 シリコン単結晶ウェーハの製造方法
JP5997552B2 (ja) * 2011-09-27 2016-09-28 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハの熱処理方法
JP2013239474A (ja) * 2012-05-11 2013-11-28 Sanken Electric Co Ltd エピタキシャル基板、半導体装置及び半導体装置の製造方法
JP6260100B2 (ja) * 2013-04-03 2018-01-17 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
KR101472349B1 (ko) * 2013-05-21 2014-12-12 주식회사 엘지실트론 반도체용 실리콘 단결정 잉곳 및 웨이퍼
JP6101565B2 (ja) * 2013-05-27 2017-03-22 シャープ株式会社 窒化物半導体エピタキシャルウェハ
MY188961A (en) * 2013-07-01 2022-01-14 Solexel Inc High-throughput thermal processing methods for producing high-efficiency crystalline silicon solar cells
US9425063B2 (en) * 2014-06-19 2016-08-23 Infineon Technologies Ag Method of reducing an impurity concentration in a semiconductor body, method of manufacturing a semiconductor device and semiconductor device
JP6100226B2 (ja) * 2014-11-26 2017-03-22 信越半導体株式会社 シリコン単結晶ウェーハの熱処理方法
CN105316767B (zh) * 2015-06-04 2019-09-24 上海超硅半导体有限公司 超大规模集成电路用硅片及其制造方法、应用
CN105280491A (zh) * 2015-06-17 2016-01-27 上海超硅半导体有限公司 硅片及制造方法
JP6413952B2 (ja) * 2015-06-26 2018-10-31 株式会社Sumco シリコンウェーハの良否判定方法、該方法を用いたシリコンウェーハの製造方法およびシリコンウェーハ
KR20170119155A (ko) * 2016-04-18 2017-10-26 주식회사 스탠딩에그 벌크 실리콘 멤스의 제조 방법
US10032663B1 (en) * 2017-05-24 2018-07-24 Texas Instruments Incorporated Anneal after trench sidewall implant to reduce defects
EP3428325B1 (de) * 2017-07-10 2019-09-11 Siltronic AG Aus einkristallsilicium hergestellter halbleiter-wafer und verfahren zur herstellung davon
JP6717267B2 (ja) * 2017-07-10 2020-07-01 株式会社Sumco シリコンウェーハの製造方法
US11515158B2 (en) 2020-03-11 2022-11-29 Globalfoundries U.S. Inc. Semiconductor structure with semiconductor-on-insulator region and method
US11695048B2 (en) 2020-04-09 2023-07-04 Sumco Corporation Silicon wafer and manufacturing method of the same
EP3929335A1 (de) * 2020-06-25 2021-12-29 Siltronic AG Aus einkristallsilicium hergestellter halbleiter-wafer und verfahren zur herstellung davon
JP7790129B2 (ja) 2021-12-14 2025-12-23 富士電機株式会社 半導体装置の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0198047A (ja) 1987-10-09 1989-04-17 Nec Corp 割込み処理方式
CA2064486C (en) * 1992-03-31 2001-08-21 Alain Comeau Method of preparing semiconductor wafer with good intrinsic gettering
JPH08213403A (ja) 1995-02-07 1996-08-20 Sumitomo Metal Ind Ltd 半導体基板及びその製造方法
DE19637182A1 (de) * 1996-09-12 1998-03-19 Wacker Siltronic Halbleitermat Verfahren zur Herstellung von Halbleiterscheiben aus Silicium mit geringer Defektdichte
JPH10303208A (ja) * 1997-04-30 1998-11-13 Toshiba Corp 半導体基板およびその製造方法
DE19983188T1 (de) * 1998-05-01 2001-05-10 Nippon Steel Corp Siliziumhalbleitersubstrat und Verfahren zu dessen Herstellung
EP1542269B1 (de) * 2002-07-17 2016-10-05 Sumco Corporation Verfahren zur herstellung eines silizium wafers mit einem hohen widerstand
KR100531552B1 (ko) * 2003-09-05 2005-11-28 주식회사 하이닉스반도체 실리콘 웨이퍼 및 그 제조방법
JP2005203575A (ja) * 2004-01-15 2005-07-28 Sumitomo Mitsubishi Silicon Corp シリコンウェーハおよびその製造方法
EP1780781B1 (de) * 2004-06-30 2019-08-07 SUMCO Corporation Prozess zur herstellung eines siliziumwafers
JP2006032799A (ja) * 2004-07-20 2006-02-02 Shin Etsu Handotai Co Ltd シリコンエピタキシャルウェーハおよびその製造方法
JP2006040980A (ja) 2004-07-22 2006-02-09 Sumco Corp シリコンウェーハおよびその製造方法
JP5537802B2 (ja) * 2008-12-26 2014-07-02 ジルトロニック アクチエンゲゼルシャフト シリコンウエハの製造方法

Also Published As

Publication number Publication date
KR101043011B1 (ko) 2011-06-21
JPWO2008136500A1 (ja) 2010-07-29
JP5256195B2 (ja) 2013-08-07
CN101675507A (zh) 2010-03-17
US8382894B2 (en) 2013-02-26
WO2008136500A1 (ja) 2008-11-13
DE602008004237D1 (de) 2011-02-10
EP2144280A4 (de) 2010-04-21
US20100047563A1 (en) 2010-02-25
EP2144280A1 (de) 2010-01-13
CN101675507B (zh) 2011-08-03
EP2144280B1 (de) 2010-12-29
KR20090129443A (ko) 2009-12-16

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