ATE496374T1 - Leseverfahren für nichtflüchtigen speicher mit kompensation der floating-gate kopplung - Google Patents
Leseverfahren für nichtflüchtigen speicher mit kompensation der floating-gate kopplungInfo
- Publication number
- ATE496374T1 ATE496374T1 AT09015112T AT09015112T ATE496374T1 AT E496374 T1 ATE496374 T1 AT E496374T1 AT 09015112 T AT09015112 T AT 09015112T AT 09015112 T AT09015112 T AT 09015112T AT E496374 T1 ATE496374 T1 AT E496374T1
- Authority
- AT
- Austria
- Prior art keywords
- memory cell
- adjacent
- coupling
- floating
- pass voltage
- Prior art date
Links
- 230000008878 coupling Effects 0.000 title abstract 3
- 238000010168 coupling process Methods 0.000 title abstract 3
- 238000005859 coupling reaction Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 230000001808 coupling effect Effects 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
- G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US77885706P | 2006-03-03 | 2006-03-03 | |
| US11/384,057 US7499319B2 (en) | 2006-03-03 | 2006-03-17 | Read operation for non-volatile storage with compensation for coupling |
| US11/377,972 US7436733B2 (en) | 2006-03-03 | 2006-03-17 | System for performing read operation on non-volatile storage with compensation for coupling |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE496374T1 true ATE496374T1 (de) | 2011-02-15 |
Family
ID=38229358
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT07751706T ATE494614T1 (de) | 2006-03-03 | 2007-02-27 | Leseoperation für nichtflüchtige speicherung mit floating-gate-kopplungskompensation |
| AT09015112T ATE496374T1 (de) | 2006-03-03 | 2007-02-27 | Leseverfahren für nichtflüchtigen speicher mit kompensation der floating-gate kopplung |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT07751706T ATE494614T1 (de) | 2006-03-03 | 2007-02-27 | Leseoperation für nichtflüchtige speicherung mit floating-gate-kopplungskompensation |
Country Status (8)
| Country | Link |
|---|---|
| EP (2) | EP1991989B1 (de) |
| JP (1) | JP4954223B2 (de) |
| KR (1) | KR101015612B1 (de) |
| CN (1) | CN101395673B (de) |
| AT (2) | ATE494614T1 (de) |
| DE (2) | DE602007011736D1 (de) |
| TW (1) | TWI330848B (de) |
| WO (1) | WO2007103038A1 (de) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7499319B2 (en) | 2006-03-03 | 2009-03-03 | Sandisk Corporation | Read operation for non-volatile storage with compensation for coupling |
| TWI335596B (en) * | 2006-06-02 | 2011-01-01 | Sandisk Corp | Method and system for data pattern sensitivity compensation using different voltage |
| US7894269B2 (en) * | 2006-07-20 | 2011-02-22 | Sandisk Corporation | Nonvolatile memory and method for compensating during programming for perturbing charges of neighboring cells |
| KR101100359B1 (ko) | 2006-12-29 | 2011-12-30 | 샌디스크 코포레이션 | 인접 메모리 셀의 저장 상태를 고려하여 비휘발성 메모리 셀을 판독하는 방법 |
| TWI380311B (en) * | 2006-12-29 | 2012-12-21 | Sandisk Technologies Inc | Systems and methods for margined neighbor reading for non-volatile memory read operations including coupling compensation |
| US7606070B2 (en) | 2006-12-29 | 2009-10-20 | Sandisk Corporation | Systems for margined neighbor reading for non-volatile memory read operations including coupling compensation |
| US7518923B2 (en) | 2006-12-29 | 2009-04-14 | Sandisk Corporation | Margined neighbor reading for non-volatile memory read operations including coupling compensation |
| KR101291667B1 (ko) * | 2007-08-20 | 2013-08-01 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그 독출 방법 |
| US7652929B2 (en) * | 2007-09-17 | 2010-01-26 | Sandisk Corporation | Non-volatile memory and method for biasing adjacent word line for verify during programming |
| US7663932B2 (en) * | 2007-12-27 | 2010-02-16 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
| KR101468149B1 (ko) * | 2008-09-19 | 2014-12-03 | 삼성전자주식회사 | 플래시 메모리 장치 및 시스템들 그리고 그것의 읽기 방법 |
| US8737129B2 (en) | 2008-11-14 | 2014-05-27 | Samsung Electronics Co., Ltd. | Nonvolatile memory device and read method thereof |
| KR101490426B1 (ko) * | 2008-11-14 | 2015-02-06 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그것의 읽기 방법 |
| KR101618063B1 (ko) | 2009-06-10 | 2016-05-04 | 삼성전자주식회사 | 비휘발성 반도체 메모리 장치 및 그것의 독출 방법 |
| US8482975B2 (en) * | 2009-09-14 | 2013-07-09 | Micron Technology, Inc. | Memory kink checking |
| JP4913191B2 (ja) * | 2009-09-25 | 2012-04-11 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| US8169822B2 (en) | 2009-11-11 | 2012-05-01 | Sandisk Technologies Inc. | Data state-dependent channel boosting to reduce channel-to-floating gate coupling in memory |
| KR101678907B1 (ko) | 2010-06-01 | 2016-11-23 | 삼성전자주식회사 | 리드 디스터번스를 줄일 수 있는 불휘발성 메모리 장치 및 그것의 읽기 방법 |
| JP5198529B2 (ja) * | 2010-09-22 | 2013-05-15 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| JP5404685B2 (ja) * | 2011-04-06 | 2014-02-05 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| KR20130072084A (ko) | 2011-12-21 | 2013-07-01 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 장치의 리드 방법 |
| US9001577B2 (en) * | 2012-06-01 | 2015-04-07 | Micron Technology, Inc. | Memory cell sensing |
| JP6088751B2 (ja) | 2012-06-07 | 2017-03-01 | 株式会社東芝 | 半導体メモリ |
| KR20160023305A (ko) * | 2014-08-22 | 2016-03-03 | 에스케이하이닉스 주식회사 | 전자 장치 |
| CN108109664A (zh) * | 2017-11-29 | 2018-06-01 | 深圳忆联信息系统有限公司 | 一种缓解mlc闪存读干扰问题的方法 |
| CN110648710A (zh) * | 2018-06-26 | 2020-01-03 | 北京兆易创新科技股份有限公司 | 字线电压的施加方法、装置、电子设备和存储介质 |
| CN110648714B (zh) * | 2018-06-26 | 2021-03-30 | 北京兆易创新科技股份有限公司 | 数据的读取方法、装置、电子设备和存储介质 |
| CN110689913B (zh) * | 2018-07-05 | 2024-07-26 | 三星电子株式会社 | 非易失性存储器装置 |
| KR102211122B1 (ko) | 2018-12-20 | 2021-02-02 | 삼성전자주식회사 | 스토리지 장치 및 스토리지 시스템 |
| CN110223724A (zh) * | 2019-05-10 | 2019-09-10 | 北京兆易创新科技股份有限公司 | 一种nand flash的读操作方法和装置 |
| CN111066087A (zh) | 2019-10-29 | 2020-04-24 | 长江存储科技有限责任公司 | 用于对存储器设备进行编程的方法 |
| US11557350B2 (en) * | 2020-10-16 | 2023-01-17 | Western Digital Technologies, Inc. | Dynamic read threshold calibration |
| US11670379B2 (en) * | 2020-12-04 | 2023-06-06 | Micron Technology, Inc. | Sense line structures in capacitive sense NAND memory |
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| US1312504A (en) | 1919-08-05 | Thermic | ||
| US1519904A (en) | 1922-08-09 | 1924-12-16 | Clifford L Cummings | Combination bonnet lock and ignition-cut-off device for motor vehicles |
| US2653604A (en) | 1950-12-19 | 1953-09-29 | Jr George N Hein | Injection device |
| KR960002006B1 (ko) | 1991-03-12 | 1996-02-09 | 가부시끼가이샤 도시바 | 2개의 기준 레벨을 사용하는 기록 검증 제어기를 갖는 전기적으로 소거 가능하고 프로그램 가능한 불휘발성 메모리 장치 |
| US6222762B1 (en) | 1992-01-14 | 2001-04-24 | Sandisk Corporation | Multi-state memory |
| US5555204A (en) | 1993-06-29 | 1996-09-10 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device |
| KR0169267B1 (ko) | 1993-09-21 | 1999-02-01 | 사토 후미오 | 불휘발성 반도체 기억장치 |
| US5903495A (en) | 1996-03-18 | 1999-05-11 | Kabushiki Kaisha Toshiba | Semiconductor device and memory system |
| US6857099B1 (en) * | 1996-09-18 | 2005-02-15 | Nippon Steel Corporation | Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program |
| US5867429A (en) | 1997-11-19 | 1999-02-02 | Sandisk Corporation | High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates |
| US6614070B1 (en) | 1998-04-16 | 2003-09-02 | Cypress Semiconductor Corporation | Semiconductor non-volatile memory device having a NAND cell structure |
| JP3829088B2 (ja) * | 2001-03-29 | 2006-10-04 | 株式会社東芝 | 半導体記憶装置 |
| US6522580B2 (en) | 2001-06-27 | 2003-02-18 | Sandisk Corporation | Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states |
| US6456528B1 (en) | 2001-09-17 | 2002-09-24 | Sandisk Corporation | Selective operation of a multi-state non-volatile memory system in a binary mode |
| CN1215561C (zh) * | 2002-01-11 | 2005-08-17 | 力晶半导体股份有限公司 | 可随机编程的非挥发半导体存储器 |
| US7046568B2 (en) | 2002-09-24 | 2006-05-16 | Sandisk Corporation | Memory sensing circuit and method for low voltage operation |
| US7327619B2 (en) | 2002-09-24 | 2008-02-05 | Sandisk Corporation | Reference sense amplifier for non-volatile memory |
| US7196931B2 (en) | 2002-09-24 | 2007-03-27 | Sandisk Corporation | Non-volatile memory and method with reduced source line bias errors |
| JP3913704B2 (ja) * | 2003-04-22 | 2007-05-09 | 株式会社東芝 | 不揮発性半導体記憶装置及びこれを用いた電子装置 |
| US7237074B2 (en) | 2003-06-13 | 2007-06-26 | Sandisk Corporation | Tracking cells for a memory system |
| US6956770B2 (en) * | 2003-09-17 | 2005-10-18 | Sandisk Corporation | Non-volatile memory and method with bit line compensation dependent on neighboring operating modes |
| US7372730B2 (en) * | 2004-01-26 | 2008-05-13 | Sandisk Corporation | Method of reading NAND memory to compensate for coupling between storage elements |
| KR100626371B1 (ko) * | 2004-03-30 | 2006-09-20 | 삼성전자주식회사 | 캐쉬 읽기 동작을 수행하는 비휘발성 메모리 장치, 그것을포함한 메모리 시스템, 그리고 캐쉬 읽기 방법 |
| US7120051B2 (en) | 2004-12-14 | 2006-10-10 | Sandisk Corporation | Pipelined programming of non-volatile memories using early data |
| US20060140007A1 (en) | 2004-12-29 | 2006-06-29 | Raul-Adrian Cernea | Non-volatile memory and method with shared processing for an aggregate of read/write circuits |
| US7187585B2 (en) * | 2005-04-05 | 2007-03-06 | Sandisk Corporation | Read operation for non-volatile storage that includes compensation for coupling |
| US7196928B2 (en) | 2005-04-05 | 2007-03-27 | Sandisk Corporation | Compensating for coupling during read operations of non-volatile memory |
| US9913305B2 (en) | 2014-08-11 | 2018-03-06 | Intel IP Corporation | Systems, methods, and devices for congestion control on a mobile network |
-
2007
- 2007-02-27 CN CN2007800072065A patent/CN101395673B/zh active Active
- 2007-02-27 AT AT07751706T patent/ATE494614T1/de not_active IP Right Cessation
- 2007-02-27 DE DE602007011736T patent/DE602007011736D1/de active Active
- 2007-02-27 DE DE602007012157T patent/DE602007012157D1/de active Active
- 2007-02-27 AT AT09015112T patent/ATE496374T1/de not_active IP Right Cessation
- 2007-02-27 EP EP07751706A patent/EP1991989B1/de active Active
- 2007-02-27 KR KR1020087023384A patent/KR101015612B1/ko active Active
- 2007-02-27 EP EP09015112A patent/EP2161723B1/de active Active
- 2007-02-27 JP JP2008557330A patent/JP4954223B2/ja active Active
- 2007-02-27 WO PCT/US2007/004967 patent/WO2007103038A1/en not_active Ceased
- 2007-03-02 TW TW096107259A patent/TWI330848B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009528651A (ja) | 2009-08-06 |
| EP2161723B1 (de) | 2011-01-19 |
| TW200802389A (en) | 2008-01-01 |
| EP1991989B1 (de) | 2011-01-05 |
| JP4954223B2 (ja) | 2012-06-13 |
| DE602007011736D1 (de) | 2011-02-17 |
| CN101395673B (zh) | 2011-09-21 |
| CN101395673A (zh) | 2009-03-25 |
| WO2007103038A1 (en) | 2007-09-13 |
| EP2161723A1 (de) | 2010-03-10 |
| KR20090026117A (ko) | 2009-03-11 |
| TWI330848B (en) | 2010-09-21 |
| KR101015612B1 (ko) | 2011-02-17 |
| EP1991989A1 (de) | 2008-11-19 |
| ATE494614T1 (de) | 2011-01-15 |
| DE602007012157D1 (de) | 2011-03-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |