ATE497419T1 - Draht- und lötverbindungsherstellungsverfahren - Google Patents

Draht- und lötverbindungsherstellungsverfahren

Info

Publication number
ATE497419T1
ATE497419T1 AT07822113T AT07822113T ATE497419T1 AT E497419 T1 ATE497419 T1 AT E497419T1 AT 07822113 T AT07822113 T AT 07822113T AT 07822113 T AT07822113 T AT 07822113T AT E497419 T1 ATE497419 T1 AT E497419T1
Authority
AT
Austria
Prior art keywords
metal region
wire
wire bond
bond
solder
Prior art date
Application number
AT07822113T
Other languages
English (en)
Inventor
Timothy Harrison Daubenspeck
Wolfgang Sauter
Jeffrey Peter Gambino
Christopher David Muzzy
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE497419T1 publication Critical patent/ATE497419T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Soldering of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/24—Preliminary treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251—Changing the shapes of bumps
    • H10W72/01255—Changing the shapes of bumps by using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01571—Cleaning, e.g. oxide removal or de-smearing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07511—Treating the bonding area before connecting, e.g. by applying flux or cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/242—Dispositions, e.g. layouts relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/922—Bond pads being integral with underlying chip-level interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)
AT07822113T 2006-11-20 2007-10-31 Draht- und lötverbindungsherstellungsverfahren ATE497419T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/561,434 US7521287B2 (en) 2006-11-20 2006-11-20 Wire and solder bond forming methods
PCT/EP2007/061766 WO2008061865A1 (en) 2006-11-20 2007-10-31 Wire and solder bond forming methods

Publications (1)

Publication Number Publication Date
ATE497419T1 true ATE497419T1 (de) 2011-02-15

Family

ID=39032250

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07822113T ATE497419T1 (de) 2006-11-20 2007-10-31 Draht- und lötverbindungsherstellungsverfahren

Country Status (7)

Country Link
US (1) US7521287B2 (de)
EP (1) EP2097202B1 (de)
JP (1) JP5055634B2 (de)
KR (1) KR20090075858A (de)
AT (1) ATE497419T1 (de)
DE (1) DE602007012367D1 (de)
WO (1) WO2008061865A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7521287B2 (en) * 2006-11-20 2009-04-21 International Business Machines Corporation Wire and solder bond forming methods
US7601628B2 (en) * 2006-11-20 2009-10-13 International Business Machines Corporation Wire and solder bond forming methods
WO2010105853A1 (de) * 2009-03-20 2010-09-23 Microgan Gmbh Vertikal kontaktiertes elektronisches bauelement sowie verfahren zur herstellung eines solchen
EP2444999A4 (de) * 2009-06-18 2012-11-14 Rohm Co Ltd Halbleiterbauelement
CN103107097B (zh) * 2011-11-11 2016-03-09 无锡华润上华科技有限公司 多项目晶圆的芯片制造方法
US9231046B2 (en) * 2013-03-15 2016-01-05 Globalfoundries Inc. Capacitor using barrier layer metallurgy
JP2016028417A (ja) 2014-07-11 2016-02-25 ローム株式会社 電子装置
JP6810222B2 (ja) * 2014-07-11 2021-01-06 ローム株式会社 電子装置
JP6607771B2 (ja) * 2015-12-03 2019-11-20 ローム株式会社 半導体装置
US10438909B2 (en) * 2016-02-12 2019-10-08 Globalfoundries Singapore Pte. Ltd. Reliable passivation for integrated circuits
US20180350732A1 (en) * 2017-06-01 2018-12-06 Applied Materials, Inc. Small vias in a polymer layer disposed on a substrate
CN108668450B (zh) * 2018-03-16 2020-09-29 深圳丹邦科技股份有限公司 一种无胶粘剂型柔性覆铜板及其制备方法
KR20220168234A (ko) 2021-06-15 2022-12-23 삼성전자주식회사 반도체 패키지

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5311404A (en) * 1992-06-30 1994-05-10 Hughes Aircraft Company Electrical interconnection substrate with both wire bond and solder contacts
US6204074B1 (en) 1995-01-09 2001-03-20 International Business Machines Corporation Chip design process for wire bond and flip-chip package
US5844317A (en) 1995-12-21 1998-12-01 International Business Machines Corporation Consolidated chip design for wire bond and flip-chip package technologies
JP3369391B2 (ja) * 1996-02-29 2003-01-20 株式会社東芝 誘電体分離型半導体装置
JPH09306872A (ja) * 1996-05-14 1997-11-28 Sony Corp 半導体装置
JPH10247664A (ja) * 1997-03-04 1998-09-14 Hitachi Ltd 半導体集積回路装置およびその製造方法
EP0926729A3 (de) * 1997-12-10 1999-12-08 Mitsubishi Gas Chemical Company, Inc. Kunststoffhalbleitergehäuse und seine Herstellung
JP3405697B2 (ja) * 1999-09-20 2003-05-12 ローム株式会社 半導体チップ
US6511901B1 (en) * 1999-11-05 2003-01-28 Atmel Corporation Metal redistribution layer having solderable pads and wire bondable pads
US6620720B1 (en) * 2000-04-10 2003-09-16 Agere Systems Inc Interconnections to copper IC's
US6388199B1 (en) * 2000-07-31 2002-05-14 Micron Technology, Inc. Selectively adjusting surface tension of soldermask material
DE60108413T2 (de) * 2000-11-10 2005-06-02 Unitive Electronics, Inc. Verfahren zum positionieren von komponenten mit hilfe flüssiger antriebsmittel und strukturen hierfür
JP2002198635A (ja) * 2000-12-27 2002-07-12 Matsushita Electric Ind Co Ltd 配線板及びその製造方法
US6534863B2 (en) 2001-02-09 2003-03-18 International Business Machines Corporation Common ball-limiting metallurgy for I/O sites
JP2003007902A (ja) * 2001-06-21 2003-01-10 Shinko Electric Ind Co Ltd 電子部品の実装基板及び実装構造
US6762122B2 (en) * 2001-09-27 2004-07-13 Unitivie International Limited Methods of forming metallurgy structures for wire and solder bonding
TWI317548B (en) * 2003-05-27 2009-11-21 Megica Corp Chip structure and method for fabricating the same
TWI223425B (en) * 2003-09-23 2004-11-01 Advanced Semiconductor Eng Method for mounting passive component on wafer
US7544522B2 (en) * 2004-06-09 2009-06-09 Renesas Technology Corp. Fabrication method of semiconductor integrated circuit device
TWI370515B (en) * 2006-09-29 2012-08-11 Megica Corp Circuit component
US7521287B2 (en) * 2006-11-20 2009-04-21 International Business Machines Corporation Wire and solder bond forming methods
US7601628B2 (en) * 2006-11-20 2009-10-13 International Business Machines Corporation Wire and solder bond forming methods

Also Published As

Publication number Publication date
JP2010510648A (ja) 2010-04-02
WO2008061865A1 (en) 2008-05-29
EP2097202B1 (de) 2011-02-02
US7521287B2 (en) 2009-04-21
KR20090075858A (ko) 2009-07-09
JP5055634B2 (ja) 2012-10-24
US20080119035A1 (en) 2008-05-22
EP2097202A1 (de) 2009-09-09
DE602007012367D1 (de) 2011-03-17

Similar Documents

Publication Publication Date Title
ATE497419T1 (de) Draht- und lötverbindungsherstellungsverfahren
ATE490552T1 (de) Draht- und lötverbindungsherstellungsverfahren
TW200639914A (en) Semiconductor device and fabrication method thereof
WO2006116030A3 (en) Bonded intermediate substrate and method of making same
TW200710980A (en) Method for manufacturing semiconductor device
WO2006007144A3 (en) Scribe street structure in semiconductor wafer
TW200729442A (en) Semiconductor die package using leadframe and clip and method of manufacturing
WO2011084362A3 (en) Semiconductor chip device with solder diffusion protection
GB2483387A (en) Multi-chip package and method of providing die-to-die interconnects in same
TW200620578A (en) Manufacturing method of chip integrated substrate
TW200802628A (en) Semiconductor structure and fabrications thereof
ATE504543T1 (de) Verbund aus mindestens zwei halbleitersubstraten sowie herstellungsverfahren
WO2012177934A3 (en) Integrated circuits with components on both sides of a selected substrate and methods of fabrication
EP1790759A4 (de) Nitridhalbleitereinkristall mit gallium, herstellungsverfahren dafür sowie substrat und vorrichtung mit dem kristall
TW200715380A (en) Process for lateral disjonting of a semiconductor wafer and opto-electronic element
TW200739854A (en) Substrate structure having solder mask layer and process for making the same
WO2007117829A3 (en) Method for bonding a semiconductor substrate to a metal substrate
TWI368943B (en) Semiconductor wafer including semiconductor chips divided by scribe line and process-monitor electrode pads formed on scribe line
TW200943511A (en) Bonding pad structure, semiconductor device including the bonding pad structure and methods of manufacturing the same
TW200741863A (en) Method and device for depositing a protective layer during an etching procedure
TW200735213A (en) Integrated circuit and method for manufacturing the same
TW200735293A (en) Semiconductor device, substrate and manufacturing method thereof
TW200603335A (en) Method for forming passivation film of semiconductor device and structure of passivation film of semiconductor device
TW200633135A (en) Method of producing semiconductor chips from a wafer
TW200603339A (en) Chip structure and method for fabricating the same

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties