ATE499700T1 - Vorrichtung und verfahren zur einseitigen ätzung - Google Patents

Vorrichtung und verfahren zur einseitigen ätzung

Info

Publication number
ATE499700T1
ATE499700T1 AT07810814T AT07810814T ATE499700T1 AT E499700 T1 ATE499700 T1 AT E499700T1 AT 07810814 T AT07810814 T AT 07810814T AT 07810814 T AT07810814 T AT 07810814T AT E499700 T1 ATE499700 T1 AT E499700T1
Authority
AT
Austria
Prior art keywords
wafer
etchant
vacuum chamber
belt
back side
Prior art date
Application number
AT07810814T
Other languages
English (en)
Inventor
Thomas P Pass
Original Assignee
Sunpower Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sunpower Corp filed Critical Sunpower Corp
Application granted granted Critical
Publication of ATE499700T1 publication Critical patent/ATE499700T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Supplying Of Containers To The Packaging Station (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
AT07810814T 2006-08-16 2007-07-25 Vorrichtung und verfahren zur einseitigen ätzung ATE499700T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/505,658 US20080041526A1 (en) 2006-08-16 2006-08-16 Single-sided etching
PCT/US2007/016817 WO2008020974A2 (en) 2006-08-16 2007-07-25 Method and apparatus for single-sided etching

Publications (1)

Publication Number Publication Date
ATE499700T1 true ATE499700T1 (de) 2011-03-15

Family

ID=39082519

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07810814T ATE499700T1 (de) 2006-08-16 2007-07-25 Vorrichtung und verfahren zur einseitigen ätzung

Country Status (7)

Country Link
US (1) US20080041526A1 (de)
EP (1) EP2079856B1 (de)
JP (1) JP5043943B2 (de)
KR (1) KR101419076B1 (de)
AT (1) ATE499700T1 (de)
DE (1) DE602007012745D1 (de)
WO (1) WO2008020974A2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040031167A1 (en) * 2002-06-13 2004-02-19 Stein Nathan D. Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife
DE102007063202A1 (de) * 2007-12-19 2009-06-25 Gebr. Schmid Gmbh & Co. Verfahren und Vorrichtung zur Behandlung von Silizium-Wafern
TW201001524A (en) * 2008-04-01 2010-01-01 Stichting Energie Arrangement and method for etching silicon wafer
US20100055398A1 (en) * 2008-08-29 2010-03-04 Evergreen Solar, Inc. Single-Sided Textured Sheet Wafer
KR101202746B1 (ko) * 2011-04-22 2012-11-19 삼성코닝정밀소재 주식회사 광전지 모듈용 기판 제조방법
US8998553B2 (en) 2011-12-07 2015-04-07 Intevac, Inc. High throughput load lock for solar wafers
US9357686B2 (en) 2013-11-14 2016-05-31 Illinois Tool Works Inc. Dispensing apparatus having substrate inverter system and clamping system, and method for dispensing a viscous material on a substrate
US20150128856A1 (en) * 2013-11-14 2015-05-14 Illinois Tool Works Inc. Dispensing apparatus having transport system and method for transporting a substrate within the dispensing apparatus
US9662675B2 (en) 2014-07-31 2017-05-30 Illinois Tool Works Inc. External inverter system for variable substrate thickness and method for rotating a substrate
US10076896B2 (en) * 2015-06-25 2018-09-18 Alta Devices, Inc. Pressurized heated rolling press for manufacture and method of use
RU173643U1 (ru) * 2017-03-06 2017-09-04 Закрытое акционерное общество "ГРУППА КРЕМНИЙ ЭЛ" Кассета для односторонней обработки полупроводниковых пластин
US11075084B2 (en) * 2017-08-31 2021-07-27 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Chemistries for etching multi-stacked layers
DE102019209845B4 (de) * 2018-07-30 2024-09-05 Singulus Technologies Ag Vorrichtung und Verfahren zur Herstellung von Halbleiterscheiben mit einer porösen Seite
DE202018005633U1 (de) 2018-12-08 2019-03-26 H2GEMINI Technology Consulting GmbH Vorrichtung zur selektiven Ätzung von Substraten
KR102000028B1 (ko) 2018-12-24 2019-07-15 박정기 센서 모듈을 이용한 스트로크 자세 정보 수집 및 코칭 방법

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3477558A (en) * 1966-10-27 1969-11-11 Fred J Fleischauer Air lift and vacuum conveyors and foraminous belt means therefor
BE795260A (fr) * 1972-02-10 1973-08-09 Saint Gobain Procede et dispositif pour la production de coussins gazeux pour le support de feuilles ou rubans par leur face superieure
US4227983A (en) * 1979-02-01 1980-10-14 Western Electric Company, Inc. Method for making carrier tape
JPH0236276Y2 (de) * 1985-01-10 1990-10-03
US4660752A (en) * 1985-08-29 1987-04-28 Compak/Webcor Manufacturing Packaging Co. Vacuum feeder for continuous web
JPS6262514A (ja) * 1985-09-12 1987-03-19 Fujitsu Ltd 光化学気相成長装置
US5618388A (en) * 1988-02-08 1997-04-08 Optical Coating Laboratory, Inc. Geometries and configurations for magnetron sputtering apparatus
US4922938A (en) * 1989-09-06 1990-05-08 Siegmund, Inc. Apparatus for single side spray processing of printed circuit boards
JPH03193153A (ja) * 1989-12-21 1991-08-22 Kasei Naoetsu:Kk 板状体の片面スプレー処理装置
DE4107464A1 (de) * 1991-03-08 1992-09-10 Schmid Gmbh & Co Geb Verfahren und vorrichtung zum einseitigen behandeln von plattenfoermigen gegenstaenden
JPH04318930A (ja) * 1991-04-17 1992-11-10 Tokyo Electron Ltd 自然酸化膜の除去方法及びその装置
JPH0641769A (ja) * 1992-07-27 1994-02-15 Dainippon Screen Mfg Co Ltd エッチング装置
JPH06183552A (ja) * 1992-12-17 1994-07-05 Toyo Eng Corp 搬送物挙動制御ベルトコンベア
JPH06302935A (ja) * 1993-04-13 1994-10-28 Yoshisato Tsubaki 基板のエッチング方法、および、基板のエッチング装置
JP3277420B2 (ja) * 1993-09-22 2002-04-22 ソニー株式会社 鉄系金属薄板のエッチング方法及び色選別機構の製造方法
JPH0846044A (ja) * 1994-07-29 1996-02-16 Nippon Steel Corp 半導体装置の製造方法
US5773088A (en) * 1995-12-05 1998-06-30 Materials Research Group, Inc. Treatment system including vacuum isolated sources and method
JP3623651B2 (ja) * 1998-03-30 2005-02-23 トヤマキカイ株式会社 搬送装置
JP2002254378A (ja) * 2001-02-22 2002-09-10 Hiroshi Akashi 液中ワーク取り出し装置
JP2003073861A (ja) * 2001-08-31 2003-03-12 Fuji Kiko:Kk エッチング装置およびエッチングシステム

Also Published As

Publication number Publication date
KR20090042970A (ko) 2009-05-04
WO2008020974A3 (en) 2008-10-16
WO2008020974A2 (en) 2008-02-21
EP2079856A4 (de) 2009-10-14
DE602007012745D1 (de) 2011-04-07
KR101419076B1 (ko) 2014-07-11
US20080041526A1 (en) 2008-02-21
JP5043943B2 (ja) 2012-10-10
EP2079856B1 (de) 2011-02-23
JP2010500777A (ja) 2010-01-07
EP2079856A2 (de) 2009-07-22

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Legal Events

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