ATE501286T1 - Halterungssystem für behandlungsapparaturen - Google Patents

Halterungssystem für behandlungsapparaturen

Info

Publication number
ATE501286T1
ATE501286T1 AT04745167T AT04745167T ATE501286T1 AT E501286 T1 ATE501286 T1 AT E501286T1 AT 04745167 T AT04745167 T AT 04745167T AT 04745167 T AT04745167 T AT 04745167T AT E501286 T1 ATE501286 T1 AT E501286T1
Authority
AT
Austria
Prior art keywords
seat
substantially flat
passages
rotate
axis
Prior art date
Application number
AT04745167T
Other languages
English (en)
Inventor
Natale Speciale
Gianluca Valente
Danilo Crippa
Vittorio Pozzetti
Franco Preti
Original Assignee
E T C Epitaxial Technology Ct Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by E T C Epitaxial Technology Ct Srl filed Critical E T C Epitaxial Technology Ct Srl
Application granted granted Critical
Publication of ATE501286T1 publication Critical patent/ATE501286T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Manipulator (AREA)
  • Treatment Of Fiber Materials (AREA)
  • Chain Conveyers (AREA)
  • Physical Vapour Deposition (AREA)
AT04745167T 2004-06-09 2004-06-09 Halterungssystem für behandlungsapparaturen ATE501286T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IT2004/000335 WO2005121417A1 (en) 2004-06-09 2004-06-09 Support system for treatment apparatuses

Publications (1)

Publication Number Publication Date
ATE501286T1 true ATE501286T1 (de) 2011-03-15

Family

ID=34957964

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04745167T ATE501286T1 (de) 2004-06-09 2004-06-09 Halterungssystem für behandlungsapparaturen

Country Status (7)

Country Link
US (1) US20060275104A1 (de)
EP (1) EP1651802B1 (de)
JP (1) JP4923189B2 (de)
CN (1) CN100529198C (de)
AT (1) ATE501286T1 (de)
DE (1) DE602004031741D1 (de)
WO (1) WO2005121417A1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1570108B1 (de) * 2002-12-10 2009-02-18 E.T.C. Epitaxial Technology Center SRL Suszeptorsystem
CN100507073C (zh) * 2002-12-10 2009-07-01 Etc外延技术中心有限公司 感受器系统
DE102005055252A1 (de) * 2005-11-19 2007-05-24 Aixtron Ag CVD-Reaktor mit gleitgelagerten Suszeptorhalter
DE102006018514A1 (de) * 2006-04-21 2007-10-25 Aixtron Ag Vorrichtung und Verfahren zur Steuerung der Oberflächentemperatur eines Substrates in einer Prozesskammer
JP6058491B2 (ja) * 2012-07-13 2017-01-11 晶元光電股▲ふん▼有限公司 気相成長用反応装置
ITCO20130041A1 (it) * 2013-09-27 2015-03-28 Lpe Spa Suscettore con elemento di supporto
ITCO20130073A1 (it) 2013-12-19 2015-06-20 Lpe Spa Camera di reazione di un reattore per crescite epitassiali adatta per l'uso con un dispositivo di carico/scarico e reattore
CN104046962B (zh) * 2014-06-04 2016-07-06 中国电子科技集团公司第四十八研究所 一种轴向气力驱动行星旋转装置
WO2016001863A1 (en) 2014-07-03 2016-01-07 Lpe S.P.A. Tool for manipulating substrates, manipulation method and epitaxial reactor
CN105386121B (zh) * 2015-10-22 2018-05-15 中国电子科技集团公司第四十八研究所 用于碳化硅外延生长的行星旋转装置
US10947640B1 (en) * 2016-12-02 2021-03-16 Svagos Technik, Inc. CVD reactor chamber with resistive heating for silicon carbide deposition
CN106435719A (zh) * 2016-12-21 2017-02-22 东莞市天域半导体科技有限公司 一种卫星盘自转的SiC外延生长主盘结构
CN109594063A (zh) * 2018-12-27 2019-04-09 西安奕斯伟硅片技术有限公司 一种外延反应设备
CN110129881A (zh) * 2019-05-06 2019-08-16 杭州弘晟智能科技有限公司 一种用于晶圆旋转的气浮基座
IT201900022047A1 (it) 2019-11-25 2021-05-25 Lpe Spa Dispositivo di supporto substrati per una camera di reazione di un reattore epitassiale con rotazione a flusso di gas, camera di reazione e reattore epitassiale
WO2021119900A1 (zh) * 2019-12-16 2021-06-24 东莞市中镓半导体科技有限公司 用于GaN材料生长的气动托盘
CN112117225B (zh) * 2020-09-23 2024-06-21 北京北方华创微电子装备有限公司 一种半导体外延设备及其基座组件
KR102854645B1 (ko) * 2020-11-18 2025-09-04 주식회사 원익아이피에스 기판 지지 조립체 및 기판 처리 장치
CN113502535B (zh) * 2021-09-09 2021-12-10 材料科学姑苏实验室 样品生长装置、样品生长方法及分子束外延系统
IT202300021816A1 (it) 2023-10-19 2025-04-19 Lpe Spa Sistema di misurazione di velocità angolare per substrati utilizzati in reattori di deposizione epitassiale

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0669027B2 (ja) * 1983-02-21 1994-08-31 株式会社日立製作所 半導体ウエハの薄膜形成方法
US4794217A (en) * 1985-04-01 1988-12-27 Qing Hua University Induction system for rapid heat treatment of semiconductor wafers
FR2596070A1 (fr) * 1986-03-21 1987-09-25 Labo Electronique Physique Dispositif comprenant un suscepteur plan tournant parallelement a un plan de reference autour d'un axe perpendiculaire a ce plan
JP2773934B2 (ja) * 1989-11-17 1998-07-09 古河電気工業株式会社 半導体ウエハの成膜装置
JPH04100223A (ja) * 1990-08-18 1992-04-02 Fujitsu Ltd 半導体処理装置及び処理方法
US5155062A (en) * 1990-12-20 1992-10-13 Cree Research, Inc. Method for silicon carbide chemical vapor deposition using levitated wafer system
US5106204A (en) * 1991-03-25 1992-04-21 Dunham James L High unit load gas bearing
US5226383A (en) * 1992-03-12 1993-07-13 Bell Communications Research, Inc. Gas foil rotating substrate holder
US5221356A (en) * 1992-10-08 1993-06-22 Northern Telecom Limited Apparatus for manufacturing semiconductor wafers
JP2762022B2 (ja) * 1993-08-25 1998-06-04 日本エー・エス・エム株式会社 Ｃｖｄ装置に使用する回転機構、およびこの機構を利用して被処理体の温度を制御する方法
IT1271233B (it) * 1994-09-30 1997-05-27 Lpe Reattore epitassiale munito di suscettore discoidale piano ed avente flusso di gas parallelo ai substrati
SE9500326D0 (sv) * 1995-01-31 1995-01-31 Abb Research Ltd Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD
SE9600705D0 (sv) * 1996-02-26 1996-02-26 Abb Research Ltd A susceptor for a device for epitaxially growing objects and such a device
US5788777A (en) * 1997-03-06 1998-08-04 Burk, Jr.; Albert A. Susceptor for an epitaxial growth factor
US6005226A (en) * 1997-11-24 1999-12-21 Steag-Rtp Systems Rapid thermal processing (RTP) system with gas driven rotating substrate
JP2001284259A (ja) * 2000-03-30 2001-10-12 Matsushita Electric Ind Co Ltd 半導体ウエハ製造装置におけるウエハ用のホルダ
DE10055033A1 (de) * 2000-11-07 2002-05-08 Aixtron Ag CVD-Reaktor mit grafitschaum-isoliertem, rohrförmigen Suszeptor
DE10055182A1 (de) * 2000-11-08 2002-05-29 Aixtron Ag CVD-Reaktor mit von einem Gasstrom drehgelagerten und -angetriebenen Substrathalter
DE10056029A1 (de) * 2000-11-11 2002-05-16 Aixtron Ag Verfahren und Vorrichtung zur Temperatursteuerung der Oberflächentemperaturen von Substraten in einem CVD-Reaktor
US6569250B2 (en) * 2001-01-08 2003-05-27 Cree, Inc. Gas-driven rotation apparatus and method for forming silicon carbide layers
DE10132448A1 (de) * 2001-07-04 2003-01-23 Aixtron Ag CVD-Vorrichtung mit differenziert temperiertem Substrathalter
ITMI20020306A1 (it) * 2002-02-15 2003-08-18 Lpe Spa Suscettore dotato di rientranze e reattore epitassiale che utilizza lo stesso
US6797069B2 (en) * 2002-04-08 2004-09-28 Cree, Inc. Gas driven planetary rotation apparatus and methods for forming silicon carbide layers
JP3908112B2 (ja) * 2002-07-29 2007-04-25 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 サセプタ、エピタキシャルウェーハ製造装置及びエピタキシャルウェーハ製造方法
CN100507073C (zh) * 2002-12-10 2009-07-01 Etc外延技术中心有限公司 感受器系统
EP1570108B1 (de) * 2002-12-10 2009-02-18 E.T.C. Epitaxial Technology Center SRL Suszeptorsystem

Also Published As

Publication number Publication date
JP2008502122A (ja) 2008-01-24
DE602004031741D1 (de) 2011-04-21
CN1777707A (zh) 2006-05-24
US20060275104A1 (en) 2006-12-07
EP1651802B1 (de) 2011-03-09
JP4923189B2 (ja) 2012-04-25
EP1651802A1 (de) 2006-05-03
WO2005121417A1 (en) 2005-12-22
CN100529198C (zh) 2009-08-19

Similar Documents

Publication Publication Date Title
ATE501286T1 (de) Halterungssystem für behandlungsapparaturen
TW200516673A (en) Heat treatment fixture for semiconductor substrate, and heat treatment method for semiconductor substrate
WO2007143566A3 (en) Fast substrate loading on polishing head without membrane inflation step
ATE491223T1 (de) Reaktor für die bearbeitung von halbleiterscheiben
TW200710955A (en) Vapor phase growing apparatus and vapor phase growing method
TWD142851S1 (zh) 用於半導體沉積器械之基底支撐器
ATE546522T1 (de) Artikel mit darauf angeordeten lokalisierten molekülen und herstellungsverfahren dafür
TW200703461A (en) Glass-based semiconductor on insulator structures and methods of making same
WO2006081104A3 (en) Semiconductor wafer boat for a vertical furnace
DE60238324D1 (de) Waferboot und verfahren zur herstellung eines rutschsicheren waferboots
TW200739797A (en) System and method for varying wafer surface temperature via wafer-carrier temperature offset
TW200636851A (en) Etching method and device
TW200644116A (en) Etching method and apparatus
WO2009004977A1 (ja) 基板処理装置、基板処理方法、並びに、記憶媒体
TW200731032A (en) Substrate holding apparatus, exposure apparatus, and device production method
TW200723431A (en) Substrate processing apparatus
TW200731345A (en) Apparatus and method for reducing contamination in immersion lithography
TW200607038A (en) Contacts to semiconductor fin device and method for manufacturing the same
TW200619108A (en) Cushion for packing disks such as semiconductor wafers
TW200711023A (en) Body for keeping a wafer and wafer prober using the same
DE60101458D1 (de) Halbleitersubstrathalter mit bewegbarer Platte für das chemisch-mechanische Polierverfahren
TW200715357A (en) Stage device
WO2003085704A3 (de) Vorrichtung zur aufnahme von substraten
WO2009078121A1 (ja) 半導体基板支持治具及びその製造方法
WO2004047154A3 (en) Lifting glass substrate without center lift pins

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties