ATE491223T1 - Reaktor für die bearbeitung von halbleiterscheiben - Google Patents

Reaktor für die bearbeitung von halbleiterscheiben

Info

Publication number
ATE491223T1
ATE491223T1 AT00973909T AT00973909T ATE491223T1 AT E491223 T1 ATE491223 T1 AT E491223T1 AT 00973909 T AT00973909 T AT 00973909T AT 00973909 T AT00973909 T AT 00973909T AT E491223 T1 ATE491223 T1 AT E491223T1
Authority
AT
Austria
Prior art keywords
reactor
wafer
rotors
processing
processing semiconductor
Prior art date
Application number
AT00973909T
Other languages
English (en)
Inventor
Steven Peace
Gary Curtis
Raymon Thompson
Brian Aegerter
Curt Dundas
Original Assignee
Semitool Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semitool Inc filed Critical Semitool Inc
Application granted granted Critical
Publication of ATE491223T1 publication Critical patent/ATE491223T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/913—Diverse treatments performed in unitary chamber

Landscapes

  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
AT00973909T 1999-11-10 2000-10-27 Reaktor für die bearbeitung von halbleiterscheiben ATE491223T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/437,711 US6423642B1 (en) 1998-03-13 1999-11-10 Reactor for processing a semiconductor wafer
PCT/US2000/029561 WO2001035454A1 (en) 1999-11-10 2000-10-27 Reactor for processing a semiconductor wafer

Publications (1)

Publication Number Publication Date
ATE491223T1 true ATE491223T1 (de) 2010-12-15

Family

ID=23737567

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00973909T ATE491223T1 (de) 1999-11-10 2000-10-27 Reaktor für die bearbeitung von halbleiterscheiben

Country Status (6)

Country Link
US (5) US6423642B1 (de)
EP (1) EP1234327B1 (de)
JP (1) JP5062934B2 (de)
AT (1) ATE491223T1 (de)
DE (1) DE60045345D1 (de)
WO (1) WO2001035454A1 (de)

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US20050032391A1 (en) 2005-02-10
DE60045345D1 (de) 2011-01-20
WO2001035454A1 (en) 2001-05-17
JP2003514379A (ja) 2003-04-15
EP1234327B1 (de) 2010-12-08
JP5062934B2 (ja) 2012-10-31
US6692613B2 (en) 2004-02-17
US6794291B2 (en) 2004-09-21
EP1234327A4 (de) 2006-06-14
US6423642B1 (en) 2002-07-23
US6447633B1 (en) 2002-09-10
US20020185163A1 (en) 2002-12-12
EP1234327A1 (de) 2002-08-28

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