ATE508378T1 - Verfahren zur herstellung eines optischen glieds für eine projektionsvorrichtung - Google Patents

Verfahren zur herstellung eines optischen glieds für eine projektionsvorrichtung

Info

Publication number
ATE508378T1
ATE508378T1 AT02705138T AT02705138T ATE508378T1 AT E508378 T1 ATE508378 T1 AT E508378T1 AT 02705138 T AT02705138 T AT 02705138T AT 02705138 T AT02705138 T AT 02705138T AT E508378 T1 ATE508378 T1 AT E508378T1
Authority
AT
Austria
Prior art keywords
producing
projection device
optical member
optical limit
dmax
Prior art date
Application number
AT02705138T
Other languages
English (en)
Inventor
Hideki Obara
Kazumasa Endo
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Application granted granted Critical
Publication of ATE508378T1 publication Critical patent/ATE508378T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/12—Halides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Environmental & Geological Engineering (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Epidemiology (AREA)
  • Optics & Photonics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Glass Compositions (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
AT02705138T 2001-03-15 2002-03-13 Verfahren zur herstellung eines optischen glieds für eine projektionsvorrichtung ATE508378T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001074127 2001-03-15
PCT/JP2002/002368 WO2002077676A1 (en) 2001-03-15 2002-03-13 Optical member and method of producing the same, and projection aligner

Publications (1)

Publication Number Publication Date
ATE508378T1 true ATE508378T1 (de) 2011-05-15

Family

ID=18931447

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02705138T ATE508378T1 (de) 2001-03-15 2002-03-13 Verfahren zur herstellung eines optischen glieds für eine projektionsvorrichtung

Country Status (6)

Country Link
US (2) US6850371B2 (de)
EP (1) EP1369708B1 (de)
JP (1) JP4172273B2 (de)
AT (1) ATE508378T1 (de)
DE (1) DE60239921D1 (de)
WO (1) WO2002077676A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6683710B2 (en) * 2001-06-01 2004-01-27 Optical Research Associates Correction of birefringence in cubic crystalline optical systems
AU2002305890A1 (en) * 2001-06-08 2002-12-23 Hair Patrol Llc Animal bathing system
US7453641B2 (en) * 2001-10-30 2008-11-18 Asml Netherlands B.V. Structures and methods for reducing aberration in optical systems
US6970232B2 (en) * 2001-10-30 2005-11-29 Asml Netherlands B.V. Structures and methods for reducing aberration in integrated circuit fabrication systems
US6995908B2 (en) * 2001-10-30 2006-02-07 Asml Netherlands B.V. Methods for reducing aberration in optical systems
JP2003238152A (ja) * 2002-02-19 2003-08-27 Canon Inc 結晶製造方法
WO2004015461A1 (en) * 2002-08-07 2004-02-19 Corning Incorporated Scatter-free uv optical fluoride crystal elements for < 200 nm laser lithography and methods
US6958864B2 (en) * 2002-08-22 2005-10-25 Asml Netherlands B.V. Structures and methods for reducing polarization aberration in integrated circuit fabrication systems
US7033433B2 (en) * 2003-01-24 2006-04-25 Corning Incorporated Crystal growth methods
EP1643017A4 (de) * 2003-07-03 2009-05-06 Hitachi Chemical Co Ltd Tiegel und verfahren zum einkristallziehen mit hilfe des tiegels
EP1796139A4 (de) * 2004-08-10 2009-08-26 Nikon Corp Optische beleuchtungsvorrichtungen, belichtungssystem und verfahren
WO2006068062A1 (ja) 2004-12-22 2006-06-29 Tokuyama Corporation フッ化金属単結晶体の引上げ装置および該装置を用いたフッ化金属単結晶体の製造方法
JP2006315916A (ja) * 2005-05-13 2006-11-24 Hitachi Chem Co Ltd フッ化物単結晶及びその育成方法、並びにレンズ
JP2006315918A (ja) * 2005-05-13 2006-11-24 Hitachi Chem Co Ltd フッ化物単結晶及びその育成方法、並びにレンズ
JP2006315917A (ja) * 2005-05-13 2006-11-24 Hitachi Chem Co Ltd フッ化物単結晶及びその育成方法、並びにレンズ
JP4591236B2 (ja) * 2005-06-29 2010-12-01 日立化成工業株式会社 フッ化物単結晶の製造方法
DE102005044697B4 (de) * 2005-09-19 2011-07-21 Hellma Materials GmbH & Co. KG, 07745 Verfahren zur Herstellung von CAF2-Einkristalle mit erhöhter Laserstabilität, CAF2-Einkristalle mit erhöhter Laserstabilität und ihre Verwendung

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3697008B2 (ja) * 1996-03-22 2005-09-21 キヤノン株式会社 フッ化物結晶及びフッ化物結晶レンズの製造方法
JP3337638B2 (ja) 1997-03-31 2002-10-21 キヤノン株式会社 フッ化物結晶の製造方法及び光学部品の製造方法
JPH1160382A (ja) 1997-08-05 1999-03-02 Nikon Corp 蛍石単結晶、およびこれを用いた光リソグラフィー装置
JPH11240798A (ja) 1998-02-26 1999-09-07 Nikon Corp 蛍石の製造方法及び光リソグラフィー用の蛍石
DE69910863T2 (de) 1998-02-26 2004-07-15 Nikon Corp. Verfahren zur Herstellung von Calciumfluorid und Calciumfluorid für Fotolithographie
JP2000034193A (ja) 1998-07-16 2000-02-02 Nikon Corp フッ化物単結晶の熱処理方法及び製造方法
JP3631063B2 (ja) * 1998-10-21 2005-03-23 キヤノン株式会社 フッ化物の精製方法及びフッ化物結晶の製造方法
US6377332B1 (en) 1999-02-03 2002-04-23 Nikon Corporation Optical member for photolithography and photolithography apparatus
TW581747B (en) * 1999-02-16 2004-04-01 Nikon Corp Synthetic quartz glass optical member for ultraviolet light
JP3466948B2 (ja) 1999-03-11 2003-11-17 キヤノン株式会社 フッ化物結晶の熱処理方法及び光学部品の作製方法
JP3466950B2 (ja) * 1999-03-30 2003-11-17 キヤノン株式会社 フッ化物結晶の熱処理方法及び光学部品の作製方法
US6683714B1 (en) * 1999-06-25 2004-01-27 Corning Incorporated Birefringence minimizing fluoride crystal optical VUV microlithography lens elements and optical blanks

Also Published As

Publication number Publication date
EP1369708A4 (de) 2008-12-31
US20050081777A1 (en) 2005-04-21
US20030089299A1 (en) 2003-05-15
US7166163B2 (en) 2007-01-23
JPWO2002077676A1 (ja) 2004-07-15
EP1369708B1 (de) 2011-05-04
JP4172273B2 (ja) 2008-10-29
US6850371B2 (en) 2005-02-01
WO2002077676A1 (en) 2002-10-03
DE60239921D1 (de) 2011-06-16
EP1369708A1 (de) 2003-12-10

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