ATE511089T1 - Verfahren zur herstellung von caf2- linsenrohlingen, insbesodere für die 193-nm- und 157-nm-lithographie mit minimierten defekten - Google Patents
Verfahren zur herstellung von caf2- linsenrohlingen, insbesodere für die 193-nm- und 157-nm-lithographie mit minimierten defektenInfo
- Publication number
- ATE511089T1 ATE511089T1 AT05715479T AT05715479T ATE511089T1 AT E511089 T1 ATE511089 T1 AT E511089T1 AT 05715479 T AT05715479 T AT 05715479T AT 05715479 T AT05715479 T AT 05715479T AT E511089 T1 ATE511089 T1 AT E511089T1
- Authority
- AT
- Austria
- Prior art keywords
- homogeneity
- caf2
- lithography
- lens blanks
- producing
- Prior art date
Links
- 238000001459 lithography Methods 0.000 title abstract 2
- 102100032986 CCR4-NOT transcription complex subunit 8 Human genes 0.000 title 1
- 101000942586 Homo sapiens CCR4-NOT transcription complex subunit 8 Proteins 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 abstract 2
- 229910001634 calcium fluoride Inorganic materials 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 2
- 206010040925 Skin striae Diseases 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 238000011835 investigation Methods 0.000 abstract 1
- 238000013386 optimize process Methods 0.000 abstract 1
- 238000004445 quantitative analysis Methods 0.000 abstract 1
- 230000009897 systematic effect Effects 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/12—Halides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Testing Of Optical Devices Or Fibers (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP04004075 | 2004-02-23 | ||
| PCT/EP2005/001890 WO2005080948A1 (en) | 2004-02-23 | 2005-02-23 | Process for preparing caf2 lens blanks especially for 193 nm and 157 nm lithography with minimized defects |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE511089T1 true ATE511089T1 (de) | 2011-06-15 |
Family
ID=34878171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT05715479T ATE511089T1 (de) | 2004-02-23 | 2005-02-23 | Verfahren zur herstellung von caf2- linsenrohlingen, insbesodere für die 193-nm- und 157-nm-lithographie mit minimierten defekten |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7883578B2 (de) |
| EP (1) | EP1718956B1 (de) |
| JP (1) | JP2007527552A (de) |
| AT (1) | ATE511089T1 (de) |
| WO (1) | WO2005080948A1 (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005059531A1 (de) | 2005-12-13 | 2007-06-14 | Schott Ag | Herstellung hochreiner, besonders strahlungsbeständiger großvolumiger Einkristalle aus Kristallscherben |
| US8784970B2 (en) * | 2010-07-22 | 2014-07-22 | Nihon Kessho Kogaku Co., Ltd. | Fluorite |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10010484A1 (de) * | 2000-03-03 | 2001-09-13 | Schott Glas | Verfahren und Vorrichtung zur Züchtung von großvolumigen orientierten Einkristallen |
| JPH11240798A (ja) * | 1998-02-26 | 1999-09-07 | Nikon Corp | 蛍石の製造方法及び光リソグラフィー用の蛍石 |
| US6587202B2 (en) | 2000-01-28 | 2003-07-01 | Lambda Physik Ag | Optical materials testing method |
| DE10010485C2 (de) | 2000-03-03 | 2002-10-02 | Schott Glas | Verfahren zur Herstellung von hochhomogenen, grossformatigen Einkristallen aus Calciumfluorid sowie deren Verwendung |
| EP1338913A4 (de) * | 2000-10-10 | 2006-09-27 | Nikon Corp | Verfahren zur bewertung der abbildungsleistung |
| AU2002213370A1 (en) * | 2000-10-20 | 2002-05-06 | Wavefront Sciences Inc. | Method for computing visual performance from objective ocular aberration measurements |
| JP4029838B2 (ja) * | 2001-07-05 | 2008-01-09 | 株式会社ニコン | 光リソグラフィー用光学部材とその評価方法 |
| TW571344B (en) * | 2001-07-10 | 2004-01-11 | Nikon Corp | Manufacturing method for projection optic system |
| DE10142649A1 (de) | 2001-08-31 | 2003-04-24 | Schott Glas | Verfahren zur Herstellung bruchfester Calciumfluorid-Einkristalle sowie deren Verwendung |
| RU2002115062A (ru) * | 2002-05-31 | 2004-02-20 | Корнинг Инкорпорейтид (Us) | Способ выращивания монокристаллов фторида кальция |
| US7245361B2 (en) * | 2002-06-04 | 2007-07-17 | Nikon Corporation | Method for evaluating refractive index homogeneity of optical member |
| DE10227345A1 (de) | 2002-06-19 | 2004-01-15 | Schott Glas | Verfahren zur Bestimmung lokaler Strukturen in optischen Kristallen |
| DE102004008753A1 (de) | 2004-02-23 | 2005-09-08 | Schott Ag | Herstellung von spannungsarmen, großvolumigen Kristallen mit geringer Spannungsdoppelbrechung und homogener Brechzahl, sowie deren Verwendung |
| DE102004008754A1 (de) | 2004-02-23 | 2005-09-08 | Schott Ag | Herstellung von spannungsarmen, nicht (111)-orientierten, großvolumigen Einkristallen mit geringer Spannungsdoppelbrechung und homogener Brechzahl, sowie deren Verwendung |
| DE102004008752A1 (de) | 2004-02-23 | 2005-09-08 | Schott Ag | Herstellung von großvolumigen CaF2-Einkristallen für die Verwendung als optische Bauelemente mit einer optischen Achse parallel zur (100) oder (110)-Kristallachse |
-
2005
- 2005-02-23 AT AT05715479T patent/ATE511089T1/de not_active IP Right Cessation
- 2005-02-23 JP JP2007500142A patent/JP2007527552A/ja active Pending
- 2005-02-23 EP EP05715479A patent/EP1718956B1/de not_active Expired - Lifetime
- 2005-02-23 WO PCT/EP2005/001890 patent/WO2005080948A1/en not_active Ceased
- 2005-02-23 US US10/590,059 patent/US7883578B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP1718956B1 (de) | 2011-05-25 |
| EP1718956A1 (de) | 2006-11-08 |
| US20070277725A1 (en) | 2007-12-06 |
| WO2005080948A1 (en) | 2005-09-01 |
| JP2007527552A (ja) | 2007-09-27 |
| US7883578B2 (en) | 2011-02-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |