ATE511214T1 - Mosfet mit schottky source und drain kontakten und verfahren zur herstellung - Google Patents

Mosfet mit schottky source und drain kontakten und verfahren zur herstellung

Info

Publication number
ATE511214T1
ATE511214T1 AT03258260T AT03258260T ATE511214T1 AT E511214 T1 ATE511214 T1 AT E511214T1 AT 03258260 T AT03258260 T AT 03258260T AT 03258260 T AT03258260 T AT 03258260T AT E511214 T1 ATE511214 T1 AT E511214T1
Authority
AT
Austria
Prior art keywords
silicon layer
gate
manufacturing
layer
metal
Prior art date
Application number
AT03258260T
Other languages
English (en)
Inventor
Woo Seok Cheong
Moon Gyu Jang
Seong Jae Lee
Original Assignee
Korea Electronics Telecomm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Korea Electronics Telecomm filed Critical Korea Electronics Telecomm
Application granted granted Critical
Publication of ATE511214T1 publication Critical patent/ATE511214T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01324—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor characterised by the sectional shape, e.g. T or inverted-T
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0277—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming conductor-insulator-semiconductor or Schottky barrier source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6744—Monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01326—Aspects related to lithography, isolation or planarisation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/647—Schottky drain or source electrodes for IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
AT03258260T 2003-04-16 2003-12-31 Mosfet mit schottky source und drain kontakten und verfahren zur herstellung ATE511214T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2003-0023969A KR100508548B1 (ko) 2003-04-16 2003-04-16 쇼트키 장벽 트랜지스터 및 그 제조방법

Publications (1)

Publication Number Publication Date
ATE511214T1 true ATE511214T1 (de) 2011-06-15

Family

ID=32906604

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03258260T ATE511214T1 (de) 2003-04-16 2003-12-31 Mosfet mit schottky source und drain kontakten und verfahren zur herstellung

Country Status (7)

Country Link
US (1) US7005356B2 (de)
EP (1) EP1469525B1 (de)
JP (1) JP4104541B2 (de)
KR (1) KR100508548B1 (de)
CN (1) CN1315196C (de)
AT (1) ATE511214T1 (de)
TW (1) TWI224862B (de)

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KR100790863B1 (ko) * 2005-12-28 2008-01-03 삼성전자주식회사 나노 와이어 제조 방법
US7799640B2 (en) 2006-09-28 2010-09-21 Semiconductor Components Industries, Llc Method of forming a semiconductor device having trench charge compensation regions
KR100789922B1 (ko) * 2006-11-29 2008-01-02 한국전자통신연구원 반도체 소자의 제조방법 및 이를 통해 제조된 반도체 소자
KR100883350B1 (ko) * 2006-12-04 2009-02-11 한국전자통신연구원 쇼트키 장벽 박막 트랜지스터 제조방법
CN101866953B (zh) * 2010-05-26 2012-08-22 清华大学 低肖特基势垒半导体结构及其形成方法
CN102593173B (zh) * 2011-01-18 2015-08-05 中国科学院微电子研究所 半导体器件及其制造方法
CN102593174B (zh) * 2011-01-18 2015-08-05 中国科学院微电子研究所 半导体器件及其制造方法
US8994123B2 (en) 2011-08-22 2015-03-31 Gold Standard Simulations Ltd. Variation resistant metal-oxide-semiconductor field effect transistor (MOSFET)
US9373684B2 (en) * 2012-03-20 2016-06-21 Semiwise Limited Method of manufacturing variation resistant metal-oxide-semiconductor field effect transistor (MOSFET)
CN103377943A (zh) * 2012-04-29 2013-10-30 中国科学院微电子研究所 半导体器件制造方法
US9263568B2 (en) 2012-07-28 2016-02-16 Semiwise Limited Fluctuation resistant low access resistance fully depleted SOI transistor with improved channel thickness control and reduced access resistance
US9269804B2 (en) 2012-07-28 2016-02-23 Semiwise Limited Gate recessed FDSOI transistor with sandwich of active and etch control layers
US9190485B2 (en) 2012-07-28 2015-11-17 Gold Standard Simulations Ltd. Fluctuation resistant FDSOI transistor with implanted subchannel
CN102818516B (zh) * 2012-08-30 2015-03-11 无锡永阳电子科技有限公司 耐高温硅应变计传感器芯片及其制作方法
KR20140067600A (ko) 2012-11-27 2014-06-05 삼성디스플레이 주식회사 스위칭 소자, 이를 포함하는 표시 기판 및 이의 제조 방법
US9209298B2 (en) 2013-03-08 2015-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Metal-oxide-semiconductor field-effect transistor with extended gate dielectric layer
US9412859B2 (en) * 2013-03-11 2016-08-09 Globalfoundries Inc. Contact geometry having a gate silicon length decoupled from a transistor length
CN104103503B (zh) * 2013-04-02 2017-12-12 无锡华润上华科技有限公司 半导体器件栅氧化层的形成方法
US9012276B2 (en) 2013-07-05 2015-04-21 Gold Standard Simulations Ltd. Variation resistant MOSFETs with superior epitaxial properties
CN103745929A (zh) * 2013-12-24 2014-04-23 上海新傲科技股份有限公司 肖特基势垒mosfet的制备方法
US9087689B1 (en) 2014-07-11 2015-07-21 Inoso, Llc Method of forming a stacked low temperature transistor and related devices
JP2016122678A (ja) * 2014-12-24 2016-07-07 猛英 白土 半導体装置及びその製造方法
US11049939B2 (en) 2015-08-03 2021-06-29 Semiwise Limited Reduced local threshold voltage variation MOSFET using multiple layers of epi for improved device operation
US11043492B2 (en) 2016-07-01 2021-06-22 Intel Corporation Self-aligned gate edge trigate and finFET devices
US10468486B2 (en) * 2017-10-30 2019-11-05 Taiwan Semiconductor Manufacturing Company Ltd. SOI substrate, semiconductor device and method for manufacturing the same
CN111834467B (zh) * 2019-04-22 2021-12-03 复旦大学 一种与Si工艺兼容的NixSiy/Ga2O3肖特基二极管及其制备方法
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Also Published As

Publication number Publication date
KR20040090063A (ko) 2004-10-22
US20040206980A1 (en) 2004-10-21
EP1469525A2 (de) 2004-10-20
JP4104541B2 (ja) 2008-06-18
TW200423400A (en) 2004-11-01
EP1469525A3 (de) 2007-12-05
CN1538531A (zh) 2004-10-20
EP1469525B1 (de) 2011-05-25
TWI224862B (en) 2004-12-01
JP2004319963A (ja) 2004-11-11
KR100508548B1 (ko) 2005-08-17
CN1315196C (zh) 2007-05-09
US7005356B2 (en) 2006-02-28

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