ATE512467T1 - Verfahren zur herstellung einer dünnschichtsiliziumsolarzelle - Google Patents

Verfahren zur herstellung einer dünnschichtsiliziumsolarzelle

Info

Publication number
ATE512467T1
ATE512467T1 AT04747712T AT04747712T ATE512467T1 AT E512467 T1 ATE512467 T1 AT E512467T1 AT 04747712 T AT04747712 T AT 04747712T AT 04747712 T AT04747712 T AT 04747712T AT E512467 T1 ATE512467 T1 AT E512467T1
Authority
AT
Austria
Prior art keywords
solar cell
thin film
silicon based
producing
silicon solar
Prior art date
Application number
AT04747712T
Other languages
English (en)
Inventor
Toru Sawada
Yohei Koi
Toshiaki Sasaki
Masashi Yoshimi
Masahiro Goto
Kenji Yamamoto
Original Assignee
Kaneka Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34106897&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE512467(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Kaneka Corp filed Critical Kaneka Corp
Application granted granted Critical
Publication of ATE512467T1 publication Critical patent/ATE512467T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/174—Photovoltaic cells having only PIN junction potential barriers comprising monocrystalline or polycrystalline materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
AT04747712T 2003-07-24 2004-07-12 Verfahren zur herstellung einer dünnschichtsiliziumsolarzelle ATE512467T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003279491 2003-07-24
JP2003358362 2003-10-17
PCT/JP2004/010248 WO2005011002A1 (ja) 2003-07-24 2004-07-12 シリコン系薄膜太陽電池

Publications (1)

Publication Number Publication Date
ATE512467T1 true ATE512467T1 (de) 2011-06-15

Family

ID=34106897

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04747712T ATE512467T1 (de) 2003-07-24 2004-07-12 Verfahren zur herstellung einer dünnschichtsiliziumsolarzelle

Country Status (8)

Country Link
US (1) US7847186B2 (de)
EP (1) EP1650812B2 (de)
JP (1) JP4257332B2 (de)
KR (1) KR101024288B1 (de)
CN (1) CN1826699B (de)
AT (1) ATE512467T1 (de)
AU (1) AU2004259486B2 (de)
WO (1) WO2005011002A1 (de)

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JP5400322B2 (ja) * 2008-05-30 2014-01-29 株式会社カネカ シリコン系薄膜太陽電池およびその製造方法
US7939454B1 (en) 2008-05-31 2011-05-10 Stion Corporation Module and lamination process for multijunction cells
US9087943B2 (en) 2008-06-25 2015-07-21 Stion Corporation High efficiency photovoltaic cell and manufacturing method free of metal disulfide barrier material
US8003432B2 (en) 2008-06-25 2011-08-23 Stion Corporation Consumable adhesive layer for thin film photovoltaic material
DE112009002056T5 (de) 2008-08-27 2011-07-14 Mitsubishi Materials Corporation Transparenter elektrisch leitfähiger Film für Solarzellen, Zusammensetzung für transparente elektrisch leitfähige Filme und Mehrfach-Solarzellen
US7855089B2 (en) 2008-09-10 2010-12-21 Stion Corporation Application specific solar cell and method for manufacture using thin film photovoltaic materials
US8026122B1 (en) 2008-09-29 2011-09-27 Stion Corporation Metal species surface treatment of thin film photovoltaic cell and manufacturing method
US8394662B1 (en) 2008-09-29 2013-03-12 Stion Corporation Chloride species surface treatment of thin film photovoltaic cell and manufacturing method
US7910399B1 (en) 2008-09-30 2011-03-22 Stion Corporation Thermal management and method for large scale processing of CIS and/or CIGS based thin films overlying glass substrates
US7947524B2 (en) 2008-09-30 2011-05-24 Stion Corporation Humidity control and method for thin film photovoltaic materials
US8425739B1 (en) 2008-09-30 2013-04-23 Stion Corporation In chamber sodium doping process and system for large scale cigs based thin film photovoltaic materials
US8383450B2 (en) 2008-09-30 2013-02-26 Stion Corporation Large scale chemical bath system and method for cadmium sulfide processing of thin film photovoltaic materials
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CN102187471B (zh) * 2008-10-14 2013-07-31 株式会社钟化 混合硅系薄膜太阳能电池及其制造方法
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US8298852B2 (en) * 2008-12-29 2012-10-30 Jusung Engineering Co., Ltd. Thin film type solar cell and method for manufacturing the same
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Also Published As

Publication number Publication date
KR20060035751A (ko) 2006-04-26
EP1650812A1 (de) 2006-04-26
KR101024288B1 (ko) 2011-03-29
EP1650812B1 (de) 2011-06-08
CN1826699A (zh) 2006-08-30
JPWO2005011002A1 (ja) 2006-09-14
US20060174935A1 (en) 2006-08-10
EP1650812B2 (de) 2019-10-23
EP1650812A4 (de) 2009-08-12
AU2004259486A1 (en) 2005-02-03
US7847186B2 (en) 2010-12-07
JP4257332B2 (ja) 2009-04-22
WO2005011002A1 (ja) 2005-02-03
CN1826699B (zh) 2010-12-29
AU2004259486B2 (en) 2010-02-18

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