ATE529897T1 - Verfahren zur herstellung von solarzellen aus kristallinem silicium anhand der gemeinsamen diffusion von bor und phosphor - Google Patents

Verfahren zur herstellung von solarzellen aus kristallinem silicium anhand der gemeinsamen diffusion von bor und phosphor

Info

Publication number
ATE529897T1
ATE529897T1 AT08849334T AT08849334T ATE529897T1 AT E529897 T1 ATE529897 T1 AT E529897T1 AT 08849334 T AT08849334 T AT 08849334T AT 08849334 T AT08849334 T AT 08849334T AT E529897 T1 ATE529897 T1 AT E529897T1
Authority
AT
Austria
Prior art keywords
substrate
phosphorus
crystalline silicon
boron
solar cells
Prior art date
Application number
AT08849334T
Other languages
English (en)
Inventor
Valentin Dan Mihailetchi
Yuji Komatsu
Original Assignee
Stichting Energie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=39473196&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE529897(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Stichting Energie filed Critical Stichting Energie
Application granted granted Critical
Publication of ATE529897T1 publication Critical patent/ATE529897T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
AT08849334T 2007-11-13 2008-11-13 Verfahren zur herstellung von solarzellen aus kristallinem silicium anhand der gemeinsamen diffusion von bor und phosphor ATE529897T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL2000999A NL2000999C2 (nl) 2007-11-13 2007-11-13 Werkwijze voor het fabriceren van kristallijn silicium zonnecellen met gebruikmaking van co-diffusie van boor en fosfor.
PCT/NL2008/050724 WO2009064183A1 (en) 2007-11-13 2008-11-13 Method of manufacturing crystalline silicon solar cells using co diffusion of boron and phosphorus

Publications (1)

Publication Number Publication Date
ATE529897T1 true ATE529897T1 (de) 2011-11-15

Family

ID=39473196

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08849334T ATE529897T1 (de) 2007-11-13 2008-11-13 Verfahren zur herstellung von solarzellen aus kristallinem silicium anhand der gemeinsamen diffusion von bor und phosphor

Country Status (10)

Country Link
US (1) US8445312B2 (de)
EP (1) EP2210283B2 (de)
JP (1) JP2011503896A (de)
KR (1) KR101515255B1 (de)
CN (1) CN101919070B (de)
AT (1) ATE529897T1 (de)
AU (1) AU2008321599A1 (de)
ES (1) ES2375324T3 (de)
NL (1) NL2000999C2 (de)
WO (1) WO2009064183A1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8518170B2 (en) 2008-12-29 2013-08-27 Honeywell International Inc. Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks
KR101119916B1 (ko) * 2009-08-24 2012-03-13 삼성전자주식회사 그래핀 전극과 유기물/무기물 복합소재를 사용한 전자 소자 및 그 제조 방법
JP4868079B1 (ja) * 2010-01-25 2012-02-01 日立化成工業株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法
US20130089944A1 (en) * 2010-06-11 2013-04-11 Amtech Systems, Inc. Solar cell silicon wafer process
US20120122265A1 (en) * 2010-11-17 2012-05-17 Hitachi Chemical Company, Ltd. Method for producing photovoltaic cell
WO2012108766A2 (en) 2011-02-08 2012-08-16 Tsc Solar B.V. A method of manufactering a solar cell and a solar cell
CN102191562B (zh) * 2011-04-25 2012-08-29 苏州阿特斯阳光电力科技有限公司 一种n型晶体硅太阳电池的硼扩散方法
CN102263159A (zh) * 2011-05-31 2011-11-30 江阴鑫辉太阳能有限公司 一种利用硼磷共扩散制备n型太阳电池的工艺
EP2743967A4 (de) * 2011-07-19 2015-06-03 Hitachi Chemical Co Ltd Zusammensetzung zur formung einer n-leitenden diffusionsschicht, herstellungsverfahren für eine n-leitende diffusionsschicht und herstellungsverfahren für ein solarzellenelement
CN103688367A (zh) * 2011-07-25 2014-03-26 日立化成株式会社 太阳能电池基板、太阳能电池基板的制造方法、太阳能电池元件及太阳能电池
US8629294B2 (en) 2011-08-25 2014-01-14 Honeywell International Inc. Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants
US8975170B2 (en) 2011-10-24 2015-03-10 Honeywell International Inc. Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions
DE102013102573A1 (de) 2012-03-13 2013-09-19 centrotherm cell & module GmbH Verfahren zur Herstellung einer Solarzelle
DE102013102574A1 (de) 2012-03-13 2013-09-19 centrotherm cell & module GmbH Verfahren zur Herstellung einer Rückkontaktsolarzelle
WO2013141700A2 (en) 2012-03-20 2013-09-26 Tempress Ip B.V. Method for manufacturing a solar cell
CN102683492B (zh) * 2012-05-27 2014-10-15 苏州阿特斯阳光电力科技有限公司 双面背接触晶体硅太阳能电池的制备方法
CN102797040B (zh) * 2012-08-22 2015-08-12 中国科学院电工研究所 一种硼(b)扩散掺杂的方法
US8722545B2 (en) * 2012-08-27 2014-05-13 Stmicroelectronics Pte Ltd. Method of selectively deglazing P205
JP6114108B2 (ja) * 2013-05-20 2017-04-12 信越化学工業株式会社 太陽電池の製造方法
KR20150007394A (ko) * 2013-07-10 2015-01-21 현대중공업 주식회사 양면수광형 태양전지의 제조방법
CN104157740B (zh) * 2014-09-03 2017-02-08 苏州阿特斯阳光电力科技有限公司 一种n型双面太阳能电池的制备方法
DE102015226516B4 (de) * 2015-12-22 2018-02-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Verfahren zur Dotierung von Halbleitersubstraten mittels eines Co-Diffusionsprozesses
JP6356855B2 (ja) * 2017-03-16 2018-07-11 信越化学工業株式会社 太陽電池の製造方法
TW201903851A (zh) * 2017-06-13 2019-01-16 日商東京應化工業股份有限公司 太陽電池元件用矽基板之製造方法
CN109301031B (zh) * 2018-09-12 2021-08-31 江苏林洋光伏科技有限公司 N型双面电池的制作方法
CN110085699A (zh) * 2019-04-22 2019-08-02 通威太阳能（成都）有限公司 一种具有钝化接触结构的p型高效电池及其制作方法
CN110233180A (zh) * 2019-06-02 2019-09-13 苏州腾晖光伏技术有限公司 P型背面隧穿氧化钝化接触太阳能电池的制备方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4451969A (en) * 1983-01-10 1984-06-05 Mobil Solar Energy Corporation Method of fabricating solar cells
US4557037A (en) * 1984-10-31 1985-12-10 Mobil Solar Energy Corporation Method of fabricating solar cells
US5082791A (en) * 1988-05-13 1992-01-21 Mobil Solar Energy Corporation Method of fabricating solar cells
DK170189B1 (da) * 1990-05-30 1995-06-06 Yakov Safir Fremgangsmåde til fremstilling af halvlederkomponenter, samt solcelle fremstillet deraf
US5468652A (en) † 1993-07-14 1995-11-21 Sandia Corporation Method of making a back contacted solar cell
US5792280A (en) * 1994-05-09 1998-08-11 Sandia Corporation Method for fabricating silicon cells
JP2000138386A (ja) * 1998-11-04 2000-05-16 Shin Etsu Chem Co Ltd 太陽電池の製造方法およびこの方法で製造された太陽電池
JP4812147B2 (ja) * 1999-09-07 2011-11-09 株式会社日立製作所 太陽電池の製造方法
DE10021440A1 (de) * 2000-05-03 2001-11-15 Univ Konstanz Verfahren zur Herstellung einer Solarzelle und nach diesem Verfahren hergestellte Solarzelle
JP2002057352A (ja) † 2000-06-02 2002-02-22 Honda Motor Co Ltd 太陽電池およびその製造方法
AUPR174800A0 (en) * 2000-11-29 2000-12-21 Australian National University, The Semiconductor processing
JP4232597B2 (ja) 2003-10-10 2009-03-04 株式会社日立製作所 シリコン太陽電池セルとその製造方法
US7435361B2 (en) * 2005-04-14 2008-10-14 E.I. Du Pont De Nemours And Company Conductive compositions and processes for use in the manufacture of semiconductor devices
JP4657068B2 (ja) * 2005-09-22 2011-03-23 シャープ株式会社 裏面接合型太陽電池の製造方法
US20080057220A1 (en) * 2006-01-31 2008-03-06 Robert Bachrach Silicon photovoltaic cell junction formed from thin film doping source
JP2008112847A (ja) * 2006-10-30 2008-05-15 Shin Etsu Chem Co Ltd 単結晶シリコン太陽電池の製造方法及び単結晶シリコン太陽電池
EP2191479A1 (de) * 2007-10-18 2010-06-02 E. I. du Pont de Nemours and Company Leitfähige zusammensetzungen und verfahren zu ihrer verwendung bei der herstellung von halbleiterbauelementen: flussmaterialien
DE102008019402A1 (de) * 2008-04-14 2009-10-15 Gebr. Schmid Gmbh & Co. Verfahren zur selektiven Dotierung von Silizium sowie damit behandeltes Silizium-Substrat
WO2010009295A2 (en) * 2008-07-16 2010-01-21 Applied Materials, Inc. Hybrid heterojunction solar cell fabrication using a metal layer mask
US7838400B2 (en) * 2008-07-17 2010-11-23 Applied Materials, Inc. Rapid thermal oxide passivated solar cell with improved junction
US8231934B2 (en) * 2008-11-26 2012-07-31 E. I. Du Pont De Nemours And Company Conductive paste for solar cell electrode
US20120227794A1 (en) * 2009-09-18 2012-09-13 Applied Materials, Inc. Threshold adjustment implants for reducing surface recombination in solar cells
WO2011050399A1 (en) * 2009-10-26 2011-05-05 Newsouth Innovations Pty Limited Improved metallization method for silicon solar cells
US8586862B2 (en) * 2009-11-18 2013-11-19 Solar Wind Technologies, Inc. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
KR101141578B1 (ko) * 2010-09-14 2012-05-17 (주)세미머티리얼즈 태양전지 제조방법.
WO2012145060A1 (en) * 2011-04-21 2012-10-26 Applied Materials, Inc. Method of forming p-n junction in solar cell substrate

Also Published As

Publication number Publication date
KR20100102113A (ko) 2010-09-20
US20100319771A1 (en) 2010-12-23
EP2210283A1 (de) 2010-07-28
EP2210283B1 (de) 2011-10-19
NL2000999C2 (nl) 2009-05-14
AU2008321599A1 (en) 2009-05-22
ES2375324T3 (es) 2012-02-28
KR101515255B1 (ko) 2015-04-24
CN101919070A (zh) 2010-12-15
JP2011503896A (ja) 2011-01-27
US8445312B2 (en) 2013-05-21
CN101919070B (zh) 2012-10-10
WO2009064183A1 (en) 2009-05-22
EP2210283B2 (de) 2015-07-15

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