ATE520157T1 - Molekulare elektronische einrichtung mit metall- metall-komplexen - Google Patents
Molekulare elektronische einrichtung mit metall- metall-komplexenInfo
- Publication number
- ATE520157T1 ATE520157T1 AT03721488T AT03721488T ATE520157T1 AT E520157 T1 ATE520157 T1 AT E520157T1 AT 03721488 T AT03721488 T AT 03721488T AT 03721488 T AT03721488 T AT 03721488T AT E520157 T1 ATE520157 T1 AT E520157T1
- Authority
- AT
- Austria
- Prior art keywords
- metal
- molecular
- electronic device
- molecular electronic
- complexes
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/701—Organic molecular electronic devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N99/00—Subject matter not provided for in other groups of this subclass
- G06N99/007—Molecular computers, i.e. using inorganic molecules
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/20—Organic diodes
- H10K10/23—Schottky diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/361—Polynuclear complexes, i.e. complexes comprising two or more metal centers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24843—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] with heat sealable or heat releasable adhesive layer
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Theoretical Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Mathematical Physics (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Health & Medical Sciences (AREA)
- Software Systems (AREA)
- Molecular Biology (AREA)
- Computing Systems (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- General Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/117,789 US6646285B1 (en) | 2002-04-05 | 2002-04-05 | Molecular electronic device using metal-metal bonded complexes |
| PCT/US2003/009566 WO2003088372A2 (en) | 2002-04-05 | 2003-03-27 | Molecular electronic device using metal-metal bonded complexes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE520157T1 true ATE520157T1 (de) | 2011-08-15 |
Family
ID=29248208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT03721488T ATE520157T1 (de) | 2002-04-05 | 2003-03-27 | Molekulare elektronische einrichtung mit metall- metall-komplexen |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US6646285B1 (de) |
| EP (1) | EP1493194B1 (de) |
| JP (1) | JP4283119B2 (de) |
| KR (1) | KR100745527B1 (de) |
| CN (1) | CN1643708B (de) |
| AT (1) | ATE520157T1 (de) |
| AU (1) | AU2003224798A1 (de) |
| MX (1) | MXPA04009562A (de) |
| TW (1) | TWI229704B (de) |
| WO (1) | WO2003088372A2 (de) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7189433B2 (en) * | 2002-04-05 | 2007-03-13 | International Business Machines Corporation | Process for preparing a film having alternatively monolayers of a metal-metal bonded complex monolayer and an organic monolayer by layer-by layer growth |
| DE10228772A1 (de) * | 2002-06-27 | 2004-01-15 | Infineon Technologies Ag | Verringerung des Kontaktwiderstandes in organischen Feldeffekttransistoren mit Palladiumkontakten durch Verwendung von Nitrilen und Isonitrilen |
| GB0215375D0 (en) * | 2002-07-03 | 2002-08-14 | Univ Cambridge Tech | Organic-inorganic hybrid transistors |
| US7285440B2 (en) * | 2002-11-25 | 2007-10-23 | International Business Machines Corporation | Organic underlayers that improve the performance of organic semiconductors |
| US7132678B2 (en) * | 2003-03-21 | 2006-11-07 | International Business Machines Corporation | Electronic device including a self-assembled monolayer, and a method of fabricating the same |
| US7166327B2 (en) * | 2003-03-21 | 2007-01-23 | International Business Machines Corporation | Method of preparing a conjugated molecular assembly |
| DE102004010954A1 (de) * | 2004-03-03 | 2005-10-06 | Novaled Gmbh | Verwendung eines Metallkomplexes als n-Dotand für ein organisches halbleitendes Matrixmaterial, organisches Halbleitermaterial und elektronisches Bauteil |
| KR101151159B1 (ko) * | 2006-09-19 | 2012-06-01 | 삼성전자주식회사 | 포스페이트계 자기조립단분자막을 포함하는 유기 박막트랜지스터 및 그 제조방법 |
| JP2008124164A (ja) * | 2006-11-10 | 2008-05-29 | Sony Corp | 半導体装置およびその製造方法 |
| JP2008124360A (ja) * | 2006-11-15 | 2008-05-29 | Sony Corp | 機能性分子素子及びその製造方法、並びに機能性分子装置 |
| DE102007028236A1 (de) | 2007-06-20 | 2009-01-02 | Siemens Ag | Halbleitendes Material und organische Gleichrichterdiode |
| CN101118607B (zh) * | 2007-09-07 | 2013-05-08 | 中国科学院上海微系统与信息技术研究所 | 实时探测单电子自旋态的方法 |
| JP5213458B2 (ja) | 2008-01-08 | 2013-06-19 | キヤノン株式会社 | アモルファス酸化物及び電界効果型トランジスタ |
| FR2967923A1 (fr) * | 2010-11-30 | 2012-06-01 | Corning Inc | Structure organo-metallique utilisable notamment comme catalyseur, ainsi que son procede de fabrication |
| KR102078435B1 (ko) * | 2016-07-14 | 2020-02-17 | 주식회사 엘지화학 | 유기 전계 발광 소자 및 이의 제조 방법 |
| CN114121810B (zh) | 2020-08-27 | 2024-12-06 | 长鑫存储技术有限公司 | 半导体结构及其制备方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4939556A (en) | 1986-07-10 | 1990-07-03 | Canon Kabushiki Kaisha | Conductor device |
| US5152805A (en) * | 1989-12-29 | 1992-10-06 | Gte Laboratories Incorporated | M-I-M' device and fabrication method |
| IL98753A0 (en) * | 1990-10-10 | 1992-07-15 | Yeda Res & Dev | Process for the production of composite organic-inorganic superlattices |
| EP0482920A3 (en) | 1990-10-24 | 1993-01-07 | Kabushiki Kaisha Toshiba | Organic optical element |
| US5217792A (en) | 1991-10-17 | 1993-06-08 | At&T Bell Laboratories | Stable polar optically nonlinear multilayer films and devices using the same |
| EP2287937A3 (de) * | 1997-07-11 | 2012-02-22 | The University of Southern California | Ladungsgeneratoren in heterolamellaren mehrschichtigen Dünnfilmen |
| US6314019B1 (en) | 1999-03-29 | 2001-11-06 | Hewlett-Packard Company | Molecular-wire crossbar interconnect (MWCI) for signal routing and communications |
| US6459095B1 (en) | 1999-03-29 | 2002-10-01 | Hewlett-Packard Company | Chemically synthesized and assembled electronics devices |
| US6128214A (en) | 1999-03-29 | 2000-10-03 | Hewlett-Packard | Molecular wire crossbar memory |
| US6198655B1 (en) | 1999-12-10 | 2001-03-06 | The Regents Of The University Of California | Electrically addressable volatile non-volatile molecular-based switching devices |
| EP1215199A1 (de) * | 2000-12-08 | 2002-06-19 | Sony International (Europe) GmbH | Linker-moleküle für selektiven Metallisation von Nukleinsäuren und ihre Verwendung |
| US20020167003A1 (en) * | 2001-04-18 | 2002-11-14 | Campbell Ian H. | Chemical and biological sensor using organic self-assembled transitors |
-
2002
- 2002-04-05 US US10/117,789 patent/US6646285B1/en not_active Expired - Lifetime
-
2003
- 2003-03-27 JP JP2003585194A patent/JP4283119B2/ja not_active Expired - Fee Related
- 2003-03-27 AT AT03721488T patent/ATE520157T1/de not_active IP Right Cessation
- 2003-03-27 KR KR1020047014081A patent/KR100745527B1/ko not_active Expired - Fee Related
- 2003-03-27 WO PCT/US2003/009566 patent/WO2003088372A2/en not_active Ceased
- 2003-03-27 MX MXPA04009562A patent/MXPA04009562A/es active IP Right Grant
- 2003-03-27 AU AU2003224798A patent/AU2003224798A1/en not_active Abandoned
- 2003-03-27 CN CN03807494XA patent/CN1643708B/zh not_active Expired - Lifetime
- 2003-03-27 EP EP03721488A patent/EP1493194B1/de not_active Expired - Lifetime
- 2003-04-02 TW TW092107511A patent/TWI229704B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CN1643708A (zh) | 2005-07-20 |
| WO2003088372A3 (en) | 2003-11-20 |
| US6646285B1 (en) | 2003-11-11 |
| US20030203168A1 (en) | 2003-10-30 |
| TW200401844A (en) | 2004-02-01 |
| CN1643708B (zh) | 2011-04-13 |
| KR100745527B1 (ko) | 2007-08-03 |
| KR20040104497A (ko) | 2004-12-10 |
| EP1493194A2 (de) | 2005-01-05 |
| MXPA04009562A (es) | 2005-01-25 |
| JP4283119B2 (ja) | 2009-06-24 |
| JP2006508525A (ja) | 2006-03-09 |
| EP1493194B1 (de) | 2011-08-10 |
| AU2003224798A1 (en) | 2003-10-27 |
| TWI229704B (en) | 2005-03-21 |
| WO2003088372A2 (en) | 2003-10-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ATE520157T1 (de) | Molekulare elektronische einrichtung mit metall- metall-komplexen | |
| DE60238557D1 (de) | Medizinische vorrichtungen mit einer mehrlagigen konstruktion | |
| BRPI0513646A (pt) | dispositivo eletrÈnico e método de formar contato | |
| ATE340413T1 (de) | Organischer dünnfilmtransistor mit siloxanpolymergrenzfläche | |
| DE502005004683D1 (de) | Optisch variables element mit elektrisch aktiver schicht | |
| TW200610019A (en) | Fully depleted SOI multiple threshold voltage application | |
| TW200720334A (en) | Anti-static polyester film | |
| ATE521045T1 (de) | Gesichertes identifikationsdokument | |
| DE69941399D1 (de) | Laminate für einkapselung von oled-vorrichtungen | |
| ATE469442T1 (de) | Strukturierung von elektrischen funktionsschichten mittels einer transferfolie und strukturierung des klebers | |
| MY147687A (en) | Wafer-processing tape | |
| DE60304355D1 (de) | Elektrooptische miniatureinrichtung und entsprechendeverwendungen dafür | |
| ATE532644T1 (de) | Optisch variable magnetstreifenanordnung | |
| ATE416561T1 (de) | Elektronische einrichtung | |
| JP2008523479A5 (de) | ||
| ATE341799T1 (de) | Datenträger mit transponderspule | |
| TW200501797A (en) | Flexible electroluminescent device | |
| DE60105795D1 (de) | Magnetstreifen mit einer klebeschicht | |
| DE602006020179D1 (de) | Ransponder | |
| ATE497635T1 (de) | Leistungshalbleitermodul | |
| TW200500976A (en) | Display panel, electrode panel and electrode substrate thereof | |
| TW200709389A (en) | Semiconductor device | |
| EP1442476A4 (de) | Dielektrischer film | |
| ATE403234T1 (de) | Leistungshalbleitermodul | |
| ATE494762T1 (de) | Elektronikkarte und flugzeug damit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |