ATE520158T1 - Verfahren zum herstellen organischer feldeffekttransistoren - Google Patents

Verfahren zum herstellen organischer feldeffekttransistoren

Info

Publication number
ATE520158T1
ATE520158T1 AT07728760T AT07728760T ATE520158T1 AT E520158 T1 ATE520158 T1 AT E520158T1 AT 07728760 T AT07728760 T AT 07728760T AT 07728760 T AT07728760 T AT 07728760T AT E520158 T1 ATE520158 T1 AT E520158T1
Authority
AT
Austria
Prior art keywords
group
hydrogen
substrate
organic field
field effect
Prior art date
Application number
AT07728760T
Other languages
English (en)
Inventor
Martin Koenemann
Peter Erk
Mang-Mang Ling
Zhenan Bao
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/550,229 external-priority patent/US20080090325A1/en
Application filed by Basf Se filed Critical Basf Se
Application granted granted Critical
Publication of ATE520158T1 publication Critical patent/ATE520158T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D471/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
    • C07D471/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains two hetero rings
    • C07D471/06—Peri-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D471/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
    • C07D471/12—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains three hetero rings
    • C07D471/16—Peri-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D493/00—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system
    • C07D493/02—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system in which the condensed system contains two hetero rings
    • C07D493/06—Peri-condensed systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
AT07728760T 2006-05-04 2007-05-03 Verfahren zum herstellen organischer feldeffekttransistoren ATE520158T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US41714906A 2006-05-04 2006-05-04
US11/550,229 US20080090325A1 (en) 2006-10-17 2006-10-17 Method for producing organic field-effect transistors
PCT/EP2007/054307 WO2007128774A1 (en) 2006-05-04 2007-05-03 Method for producing organic field-effect transistors

Publications (1)

Publication Number Publication Date
ATE520158T1 true ATE520158T1 (de) 2011-08-15

Family

ID=38226641

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07728760T ATE520158T1 (de) 2006-05-04 2007-05-03 Verfahren zum herstellen organischer feldeffekttransistoren

Country Status (6)

Country Link
US (1) US7910736B2 (de)
EP (1) EP2022105B1 (de)
JP (1) JP5470606B2 (de)
KR (1) KR101364873B1 (de)
AT (1) ATE520158T1 (de)
WO (1) WO2007128774A1 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007093643A1 (de) * 2006-02-17 2007-08-23 Basf Se Fluorierte rylentetracarbonsäurederivate und deren verwendung
US20070269924A1 (en) * 2006-05-18 2007-11-22 Basf Aktiengesellschaft Patterning nanowires on surfaces for fabricating nanoscale electronic devices
EP2170862A1 (de) * 2007-06-22 2010-04-07 Basf Se VERWENDUNG VON N,Ný-BIS(1,1-DIHYDROPERFLUOR-C3-C5-ALKYL)PERYLEN-3,4:9,10-TETRACARBONSÄUREDIIMIDE
WO2009024512A1 (de) * 2007-08-17 2009-02-26 Basf Se Halogenhaltige perylentetracarbonsäurederivate und deren verwendung
KR20100097662A (ko) * 2007-10-31 2010-09-03 바스프 에스이 할로겐화 프탈로시아닌의 용도
JP5523351B2 (ja) * 2008-02-05 2014-06-18 ビーエーエスエフ ソシエタス・ヨーロピア ペリレン半導体並びにその製造方法及び使用
WO2009115553A1 (en) * 2008-03-19 2009-09-24 Basf Se N,n'-bis(fluorophenylalkyl)-substituted perylene-3,4:9,10-tetracarboximides, and the preparation and use thereof
US8299354B2 (en) * 2008-08-19 2012-10-30 Sabic Innovative Plastics Ip B.V. Luminescent solar collector
US8304645B2 (en) * 2008-08-19 2012-11-06 Sabic Innovative Plastics Ip B.V. Luminescent solar collector
JP5984855B2 (ja) * 2011-03-15 2016-09-06 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ テトラアザペロピレン化合物及びそのｎ型半導体としての使用
WO2013050401A2 (en) * 2011-10-04 2013-04-11 Basf Se Polymers based on benzodiones
US20170018717A1 (en) * 2014-02-24 2017-01-19 Basf Se New cyclazines and their use as semiconductors
US20170301477A1 (en) 2016-04-04 2017-10-19 Capacitor Sciences Incorporated Electro-polarizable compound and capacitor
US10347423B2 (en) 2014-05-12 2019-07-09 Capacitor Sciences Incorporated Solid multilayer structure as semiproduct for meta-capacitor
CN106575573B (zh) 2014-05-12 2019-03-19 柯帕瑟特科学有限责任公司 能量储存器件及其制造方法
US10319523B2 (en) 2014-05-12 2019-06-11 Capacitor Sciences Incorporated Yanli dielectric materials and capacitor thereof
US10340082B2 (en) 2015-05-12 2019-07-02 Capacitor Sciences Incorporated Capacitor and method of production thereof
WO2016073522A1 (en) 2014-11-04 2016-05-12 Capacitor Sciences Incorporated Energy storage devices and methods of production thereof
US9932358B2 (en) 2015-05-21 2018-04-03 Capacitor Science Incorporated Energy storage molecular material, crystal dielectric layer and capacitor
US9941051B2 (en) 2015-06-26 2018-04-10 Capactor Sciences Incorporated Coiled capacitor
US10026553B2 (en) 2015-10-21 2018-07-17 Capacitor Sciences Incorporated Organic compound, crystal dielectric layer and capacitor
US10305295B2 (en) 2016-02-12 2019-05-28 Capacitor Sciences Incorporated Energy storage cell, capacitive energy storage module, and capacitive energy storage system
US10636575B2 (en) 2016-02-12 2020-04-28 Capacitor Sciences Incorporated Furuta and para-Furuta polymer formulations and capacitors
US10566138B2 (en) 2016-04-04 2020-02-18 Capacitor Sciences Incorporated Hein electro-polarizable compound and capacitor thereof
US9978517B2 (en) 2016-04-04 2018-05-22 Capacitor Sciences Incorporated Electro-polarizable compound and capacitor
US10153087B2 (en) * 2016-04-04 2018-12-11 Capacitor Sciences Incorporated Electro-polarizable compound and capacitor
AU2018315623B2 (en) * 2017-08-08 2022-03-24 Lleaf Pty Ltd "Compounds as potential dye molecules"
EP3717485A4 (de) * 2017-11-20 2021-07-07 Capacitor Sciences Incorporated Elektroplattierbare hein-verbindung und kondensator dafür

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3235526C2 (de) 1982-09-25 1998-03-19 Basf Ag Substituierte Perylen-3,4,9,10-tetracarbonsäurediimide
US4667036A (en) 1983-08-27 1987-05-19 Basf Aktiengesellschaft Concentration of light over a particular area, and novel perylene-3,4,9,10-tetracarboxylic acid diimides
JPH07106613A (ja) * 1993-09-29 1995-04-21 Nippon Shokubai Co Ltd 有機ｎ型半導体およびこれを用いた有機太陽電池
JP3230175B2 (ja) 1994-04-26 2001-11-19 コニカ株式会社 電子写真感光体
EP0804507B1 (de) 1995-01-20 1999-04-28 Basf Aktiengesellschaft Substituierte quaterrylentetracarbonsäurediimide
DE19547209A1 (de) 1995-12-18 1997-06-19 Basf Ag 1,7-Diaroxy-oder -arylthiosubstituierte Perylen-3,4,9,10-tetracarbonsäuren, deren Dianhydride und Diimide
DE19547210A1 (de) * 1995-12-18 1997-06-19 Basf Ag 1,7-Disubstituierte Perylen-3,4,9-10-tetracarbonsäuren, deren Dianhydride und Diimide
DE10039232A1 (de) 2000-08-11 2002-02-21 Basf Ag Flüssigkristalline Perylen-3,4:9,10-tetracarbonsäurediimide
DE10148172B4 (de) 2001-09-28 2007-11-15 Qimonda Ag Fluoreszierende Naphthalin-1,4,5,8-tetracarbonsäurebisimide mit elektronenschiebendem Substituenten am Kern
DE10225595A1 (de) 2002-06-07 2003-12-18 Basf Ag 1,6,9,14-Tetrasubstituierte Terrylentetracarbonsäurediimide
US6861664B2 (en) 2003-07-25 2005-03-01 Xerox Corporation Device with n-type semiconductor
KR101148868B1 (ko) * 2004-01-26 2012-05-29 노오쓰웨스턴 유니버시티 페릴렌 ｎ-형 반도체 및 관련된 소자
DE102004006832A1 (de) * 2004-02-12 2005-08-25 Modine Manufacturing Co., Racine Luftführungsgehäuse
JP2005228968A (ja) * 2004-02-13 2005-08-25 Sharp Corp 電界効果型トランジスタ、これを用いた画像表示装置及び半導体装置
JP5013665B2 (ja) * 2004-09-10 2012-08-29 国立大学法人東京工業大学 ベンゾトリアゾール構造含有高分子及びその製造方法、並びに電荷輸送材料及び有機電子デバイス
US7795145B2 (en) 2006-02-15 2010-09-14 Basf Aktiengesellschaft Patterning crystalline compounds on surfaces
US20070269924A1 (en) 2006-05-18 2007-11-22 Basf Aktiengesellschaft Patterning nanowires on surfaces for fabricating nanoscale electronic devices
WO2009115553A1 (en) 2008-03-19 2009-09-24 Basf Se N,n'-bis(fluorophenylalkyl)-substituted perylene-3,4:9,10-tetracarboximides, and the preparation and use thereof

Also Published As

Publication number Publication date
KR20090018082A (ko) 2009-02-19
US20080017850A1 (en) 2008-01-24
KR101364873B1 (ko) 2014-02-19
EP2022105A1 (de) 2009-02-11
JP2009535830A (ja) 2009-10-01
EP2022105B1 (de) 2011-08-10
US7910736B2 (en) 2011-03-22
WO2007128774A1 (en) 2007-11-15
JP5470606B2 (ja) 2014-04-16

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