ATE522932T1 - Leistungs-schottkydiode mit sicoi-substrat und diesbezügliches herstellungsverfahren - Google Patents
Leistungs-schottkydiode mit sicoi-substrat und diesbezügliches herstellungsverfahrenInfo
- Publication number
- ATE522932T1 ATE522932T1 AT03727583T AT03727583T ATE522932T1 AT E522932 T1 ATE522932 T1 AT E522932T1 AT 03727583 T AT03727583 T AT 03727583T AT 03727583 T AT03727583 T AT 03727583T AT E522932 T1 ATE522932 T1 AT E522932T1
- Authority
- AT
- Austria
- Prior art keywords
- production method
- schottky diode
- related production
- substrate
- power schottky
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
- H10D8/051—Manufacture or treatment of Schottky diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
- H10D30/875—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having thin-film semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/012—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor
- H10D64/0121—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group IV semiconductors
- H10D64/0123—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group IV semiconductors to silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0203165A FR2837322B1 (fr) | 2002-03-14 | 2002-03-14 | DIODE SCHOTTKY DE PUISSANCE A SUBSTRAT SiCOI, ET PROCEDE DE REALISATION D'UN TELLE DIODE |
| PCT/FR2003/000787 WO2003077321A2 (fr) | 2002-03-14 | 2003-03-12 | Diode schottky de puissance a substrat sicoi, et procede de realisation d'une telle diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE522932T1 true ATE522932T1 (de) | 2011-09-15 |
Family
ID=27772110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT03727583T ATE522932T1 (de) | 2002-03-14 | 2003-03-12 | Leistungs-schottkydiode mit sicoi-substrat und diesbezügliches herstellungsverfahren |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7166894B2 (de) |
| EP (1) | EP1483793B1 (de) |
| JP (1) | JP4593115B2 (de) |
| AT (1) | ATE522932T1 (de) |
| AU (1) | AU2003233372A1 (de) |
| FR (1) | FR2837322B1 (de) |
| WO (1) | WO2003077321A2 (de) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9515135B2 (en) * | 2003-01-15 | 2016-12-06 | Cree, Inc. | Edge termination structures for silicon carbide devices |
| US7026650B2 (en) | 2003-01-15 | 2006-04-11 | Cree, Inc. | Multiple floating guard ring edge termination for silicon carbide devices |
| WO2006041144A1 (en) * | 2004-10-13 | 2006-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Etching method and manufacturing method of semiconductor device |
| US20090223292A1 (en) * | 2006-09-28 | 2009-09-10 | Hitachi Metals, Ltd. | Acceleration sensor |
| JP2008190961A (ja) * | 2007-02-02 | 2008-08-21 | Hitachi Metals Ltd | ピエゾ抵抗型加速度センサー |
| WO2008148095A1 (en) * | 2007-05-25 | 2008-12-04 | Astralux, Inc. | Hybrid silicon/non-silicon electronic device with heat spreader |
| JP2009076866A (ja) * | 2007-08-31 | 2009-04-09 | Sumitomo Electric Ind Ltd | ショットキーバリアダイオード |
| US8518811B2 (en) * | 2011-04-08 | 2013-08-27 | Infineon Technologies Ag | Schottky diodes having metal gate electrodes and methods of formation thereof |
| KR102099438B1 (ko) * | 2013-10-07 | 2020-04-09 | 엘지이노텍 주식회사 | 반도체 소자 |
| US9583482B2 (en) * | 2015-02-11 | 2017-02-28 | Monolith Semiconductor Inc. | High voltage semiconductor devices and methods of making the devices |
| ES2911200T3 (es) * | 2016-12-15 | 2022-05-18 | Univ Griffith | Diodos de Schottky de carburo de silicio |
| GB2569196B (en) * | 2017-12-11 | 2022-04-20 | Pragmatic Printing Ltd | Schottky diode |
| US10615292B2 (en) * | 2018-03-27 | 2020-04-07 | Hong Kong Applied Science And Technology Research Institute Co., Ltd. | High voltage silicon carbide Schottky diode flip chip array |
| JP6968042B2 (ja) * | 2018-07-17 | 2021-11-17 | 三菱電機株式会社 | ＳｉＣ−ＳＯＩデバイスおよびその製造方法 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1111688A (fr) | 1954-09-22 | 1956-03-02 | Vase à fleurs | |
| US4045248A (en) * | 1973-06-26 | 1977-08-30 | U.S. Philips Corporation | Making Schottky barrier devices |
| JPS519383A (ja) * | 1974-07-11 | 1976-01-26 | Sony Corp | Handotaisochi |
| JPS5640677U (de) * | 1979-09-07 | 1981-04-15 | ||
| DE3219606A1 (de) * | 1982-05-25 | 1983-12-01 | Siemens AG, 1000 Berlin und 8000 München | Schottky-leistungsdiode |
| JPS6173345A (ja) * | 1984-09-19 | 1986-04-15 | Toshiba Corp | 半導体装置 |
| JPS6423569A (en) * | 1987-07-20 | 1989-01-26 | Matsushita Electronics Corp | Schottky barrier semiconductor |
| JPH067594B2 (ja) * | 1987-11-20 | 1994-01-26 | 富士通株式会社 | 半導体基板の製造方法 |
| US6573534B1 (en) * | 1995-09-06 | 2003-06-03 | Denso Corporation | Silicon carbide semiconductor device |
| AU1531797A (en) * | 1996-01-24 | 1997-08-20 | Cree Research, Inc. | Mesa schottky diode with guard ring |
| US5898210A (en) * | 1996-06-14 | 1999-04-27 | The United States Of America As Represented By The Secretary Of The Army | Semiconductor diode with high turn on and breakdown voltages |
| US5880491A (en) * | 1997-01-31 | 1999-03-09 | The United States Of America As Represented By The Secretary Of The Air Force | SiC/111-V-nitride heterostructures on SiC/SiO2 /Si for optoelectronic devices |
| US6784489B1 (en) * | 1997-03-28 | 2004-08-31 | Stmicroelectronics, Inc. | Method of operating a vertical DMOS transistor with schottky diode body structure |
| DE19723176C1 (de) | 1997-06-03 | 1998-08-27 | Daimler Benz Ag | Leistungshalbleiter-Bauelement und Verfahren zu dessen Herstellung |
| JPH1174498A (ja) * | 1997-08-29 | 1999-03-16 | N T T Electron Kk | 半導体集積装置 |
| FR2774214B1 (fr) * | 1998-01-28 | 2002-02-08 | Commissariat Energie Atomique | PROCEDE DE REALISATION D'UNE STRUCTURE DE TYPE SEMI-CONDUCTEUR SUR ISOLANT ET EN PARTICULIER SiCOI |
| DE19954866A1 (de) * | 1999-11-15 | 2001-05-31 | Infineon Technologies Ag | Verfahren zur Behandlung einer durch Epitaxie hergestellten Oberfläche eines SiC-Halbleiterkörpers und danach hergestellten Schottkykontakt |
| US6903373B1 (en) * | 1999-11-23 | 2005-06-07 | Agere Systems Inc. | SiC MOSFET for use as a power switch and a method of manufacturing the same |
| FR2803103B1 (fr) * | 1999-12-24 | 2003-08-29 | St Microelectronics Sa | Diode schottky sur substrat de carbure de silicium |
| US6566680B1 (en) * | 2001-01-30 | 2003-05-20 | Advanced Micro Devices, Inc. | Semiconductor-on-insulator (SOI) tunneling junction transistor |
| US6509613B1 (en) * | 2001-05-04 | 2003-01-21 | Advanced Micro Devices, Inc. | Self-aligned floating body control for SOI device through leakage enhanced buried oxide |
| US6566158B2 (en) * | 2001-08-17 | 2003-05-20 | Rosemount Aerospace Inc. | Method of preparing a semiconductor using ion implantation in a SiC layer |
| US6689669B2 (en) * | 2001-11-03 | 2004-02-10 | Kulite Semiconductor Products, Inc. | High temperature sensors utilizing doping controlled, dielectrically isolated beta silicon carbide (SiC) sensing elements on a specifically selected high temperature force collecting membrane |
| US6656811B2 (en) * | 2001-12-21 | 2003-12-02 | Texas Instruments Incorporated | Carbide emitter mask etch stop |
| US6764907B2 (en) * | 2002-02-19 | 2004-07-20 | Bart J. Van Zeghbroeck | Method of fabricating self-aligned silicon carbide semiconductor devices |
-
2002
- 2002-03-14 FR FR0203165A patent/FR2837322B1/fr not_active Expired - Fee Related
-
2003
- 2003-03-12 JP JP2003575425A patent/JP4593115B2/ja not_active Expired - Lifetime
- 2003-03-12 US US10/507,757 patent/US7166894B2/en not_active Expired - Lifetime
- 2003-03-12 WO PCT/FR2003/000787 patent/WO2003077321A2/fr not_active Ceased
- 2003-03-12 AT AT03727583T patent/ATE522932T1/de not_active IP Right Cessation
- 2003-03-12 EP EP03727583A patent/EP1483793B1/de not_active Expired - Lifetime
- 2003-03-12 AU AU2003233372A patent/AU2003233372A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US20050161760A1 (en) | 2005-07-28 |
| FR2837322B1 (fr) | 2005-02-04 |
| US7166894B2 (en) | 2007-01-23 |
| WO2003077321A3 (fr) | 2004-04-15 |
| AU2003233372A8 (en) | 2003-09-22 |
| JP4593115B2 (ja) | 2010-12-08 |
| EP1483793A2 (de) | 2004-12-08 |
| JP2005531127A (ja) | 2005-10-13 |
| WO2003077321A2 (fr) | 2003-09-18 |
| AU2003233372A1 (en) | 2003-09-22 |
| FR2837322A1 (fr) | 2003-09-19 |
| EP1483793B1 (de) | 2011-08-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |