ATE524578T1 - Verfahren zur herstellung eines sic-einkristalls - Google Patents

Verfahren zur herstellung eines sic-einkristalls

Info

Publication number: ATE524578T1
Authority: AT; Austria
Prior art keywords: melt; single crystal; sic single; producing; sic
Prior art date: 2007-06-11

Application number

AT08807153T

Other languages

English (en)

Inventor

Hidemitsu Sakamoto

Original Assignee

Toyota Motor Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2007-06-11

Filing date

2008-06-10

Publication date

2011-09-15

2008-06-10 Application filed by Toyota Motor Co Ltd filed Critical Toyota Motor Co Ltd

2011-09-15 Application granted granted Critical

2011-09-15 Publication of ATE524578T1 publication Critical patent/ATE524578T1/de

Links

239000013078 crystal Substances 0.000 title abstract 4
238000004519 manufacturing process Methods 0.000 title 1
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
229910002804 graphite Inorganic materials 0.000 abstract 1
239000010439 graphite Substances 0.000 abstract 1
239000000155 melt Substances 0.000 abstract 1

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Inorganic Chemistry (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

AT08807153T 2007-06-11 2008-06-10 Verfahren zur herstellung eines sic-einkristalls ATE524578T1 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2007153846A JP4811354B2 (ja)	2007-06-11	2007-06-11	ＳｉＣ単結晶の製造方法
PCT/IB2008/002494 WO2008155673A2 (en)	2007-06-11	2008-06-10	Method for producing sic single crystal

Publications (1)

Publication Number	Publication Date
ATE524578T1 true ATE524578T1 (de)	2011-09-15

Family

ID=40156755

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AT08807153T ATE524578T1 (de)	2007-06-11	2008-06-10	Verfahren zur herstellung eines sic-einkristalls

Country Status (7)

Country	Link
US (1)	US20100083896A1 (de)
EP (1)	EP2155933B1 (de)
JP (1)	JP4811354B2 (de)
KR (1)	KR101083855B1 (de)
CN (1)	CN101680113B (de)
AT (1)	ATE524578T1 (de)
WO (1)	WO2008155673A2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP4853527B2 (ja) *	2009-02-19	2012-01-11	トヨタ自動車株式会社	ｎ型ＳｉＣ単結晶の製造方法、それによって得られるｎ型ＳｉＣ単結晶およびその用途
JP5656623B2 (ja) *	2010-12-28	2015-01-21	トヨタ自動車株式会社	ＳｉＣ単結晶の製造装置および製造方法
KR101622858B1 (ko) *	2011-10-31	2016-05-19	도요타지도샤가부시키가이샤	SiC 단결정의 제조 방법
JP5741652B2 (ja) *	2013-08-30	2015-07-01	トヨタ自動車株式会社	ｎ型ＳｉＣ単結晶及びその製造方法
US10718065B2 (en)	2015-10-26	2020-07-21	Lg Chem, Ltd.	Silicon-based molten composition and manufacturing method of SiC single crystal using the same
WO2017073983A1 (ko)	2015-10-26	2017-05-04	주식회사 엘지화학	실리콘계 용융 조성물 및 이를 이용한 sic 단결정의 제조 방법
JP2017119594A (ja)	2015-12-28	2017-07-06	東洋炭素株式会社	単結晶ＳｉＣの製造方法及び収容容器
US10577720B2 (en) *	2017-01-04	2020-03-03	Cree, Inc.	Stabilized, high-doped silicon carbide
CN110029393A (zh) *	2019-05-29	2019-07-19	孟静	碳化硅制备装置
CN110016713A (zh) *	2019-05-29	2019-07-16	孟静	碳化硅制备方法
CN115821362B (zh) *	2022-11-01	2025-08-29	中国科学院物理研究所	用于制备n型SiC单晶的方法
CN118147754A (zh) *	2024-04-17	2024-06-07	苏州清研半导体科技有限公司	一种长晶熔体、碳化硅单晶的制备方法和碳化硅单晶

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH04193798A (ja) *	1990-11-27	1992-07-13	Toshiba Corp	ＳｉＣ単結晶の製造方法
US5679153A (en) *	1994-11-30	1997-10-21	Cree Research, Inc.	Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures
JP2000264790A (ja) *	1999-03-17	2000-09-26	Hitachi Ltd	炭化珪素単結晶の製造方法
EP1498518B1 (de) *	2002-04-15	2008-10-29	Sumitomo Metal Industries, Ltd.	Verfahren zur herstellung eines siliciumcarbid-einkristalles
US7520930B2 (en) *	2002-04-15	2009-04-21	Sumitomo Metal Industries, Ltd.	Silicon carbide single crystal and a method for its production
JP4196791B2 (ja) *	2003-09-08	2008-12-17	トヨタ自動車株式会社	ＳｉＣ単結晶の製造方法
JP4225296B2 (ja) *	2005-06-20	2009-02-18	トヨタ自動車株式会社	炭化珪素単結晶の製造方法
JP4419937B2 (ja) *	2005-09-16	2010-02-24	住友金属工業株式会社	炭化珪素単結晶の製造方法
JP4661571B2 (ja) *	2005-12-08	2011-03-30	トヨタ自動車株式会社	炭化珪素単結晶の製造方法
JP4179331B2 (ja) *	2006-04-07	2008-11-12	トヨタ自動車株式会社	ＳｉＣ単結晶の製造方法

2007
- 2007-06-11 JP JP2007153846A patent/JP4811354B2/ja not_active Expired - Fee Related
2008
- 2008-06-10 WO PCT/IB2008/002494 patent/WO2008155673A2/en not_active Ceased
- 2008-06-10 EP EP08807153A patent/EP2155933B1/de not_active Not-in-force
- 2008-06-10 AT AT08807153T patent/ATE524578T1/de not_active IP Right Cessation
- 2008-06-10 US US12/528,332 patent/US20100083896A1/en not_active Abandoned
- 2008-06-10 KR KR1020097025673A patent/KR101083855B1/ko not_active Expired - Fee Related
- 2008-06-10 CN CN2008800196310A patent/CN101680113B/zh not_active Expired - Fee Related

Also Published As

Publication number	Publication date
EP2155933A2 (de)	2010-02-24
US20100083896A1 (en)	2010-04-08
JP2008303125A (ja)	2008-12-18
WO2008155673A8 (en)	2009-08-20
KR20100007977A (ko)	2010-01-22
JP4811354B2 (ja)	2011-11-09
KR101083855B1 (ko)	2011-11-15
CN101680113B (zh)	2012-05-02
WO2008155673A2 (en)	2008-12-24
EP2155933B1 (de)	2011-09-14
WO2008155673A3 (en)	2009-03-19
CN101680113A (zh)	2010-03-24

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Legal Events

Date	Code	Title	Description
2012-03-15	RER	Ceased as to paragraph 5 lit. 3 law introducing patent treaties