ATE524578T1 - Verfahren zur herstellung eines sic-einkristalls - Google Patents

Verfahren zur herstellung eines sic-einkristalls

Info

Publication number
ATE524578T1
ATE524578T1 AT08807153T AT08807153T ATE524578T1 AT E524578 T1 ATE524578 T1 AT E524578T1 AT 08807153 T AT08807153 T AT 08807153T AT 08807153 T AT08807153 T AT 08807153T AT E524578 T1 ATE524578 T1 AT E524578T1
Authority
AT
Austria
Prior art keywords
melt
single crystal
sic single
producing
sic
Prior art date
Application number
AT08807153T
Other languages
English (en)
Inventor
Hidemitsu Sakamoto
Original Assignee
Toyota Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Motor Co Ltd filed Critical Toyota Motor Co Ltd
Application granted granted Critical
Publication of ATE524578T1 publication Critical patent/ATE524578T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT08807153T 2007-06-11 2008-06-10 Verfahren zur herstellung eines sic-einkristalls ATE524578T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007153846A JP4811354B2 (ja) 2007-06-11 2007-06-11 ＳｉＣ単結晶の製造方法
PCT/IB2008/002494 WO2008155673A2 (en) 2007-06-11 2008-06-10 Method for producing sic single crystal

Publications (1)

Publication Number Publication Date
ATE524578T1 true ATE524578T1 (de) 2011-09-15

Family

ID=40156755

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08807153T ATE524578T1 (de) 2007-06-11 2008-06-10 Verfahren zur herstellung eines sic-einkristalls

Country Status (7)

Country Link
US (1) US20100083896A1 (de)
EP (1) EP2155933B1 (de)
JP (1) JP4811354B2 (de)
KR (1) KR101083855B1 (de)
CN (1) CN101680113B (de)
AT (1) ATE524578T1 (de)
WO (1) WO2008155673A2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4853527B2 (ja) * 2009-02-19 2012-01-11 トヨタ自動車株式会社 ｎ型ＳｉＣ単結晶の製造方法、それによって得られるｎ型ＳｉＣ単結晶およびその用途
JP5656623B2 (ja) * 2010-12-28 2015-01-21 トヨタ自動車株式会社 ＳｉＣ単結晶の製造装置および製造方法
KR101622858B1 (ko) * 2011-10-31 2016-05-19 도요타지도샤가부시키가이샤 SiC 단결정의 제조 방법
JP5741652B2 (ja) * 2013-08-30 2015-07-01 トヨタ自動車株式会社 ｎ型ＳｉＣ単結晶及びその製造方法
JP6725096B2 (ja) 2015-10-26 2020-07-15 エルジー・ケム・リミテッド シリコン系溶融組成物およびこれを用いたＳｉＣ単結晶の製造方法
CN107924814B (zh) 2015-10-26 2021-08-10 株式会社Lg化学 基于硅的熔融组合物和使用其的SiC单晶的制造方法
JP2017119594A (ja) 2015-12-28 2017-07-06 東洋炭素株式会社 単結晶ＳｉＣの製造方法及び収容容器
US10577720B2 (en) * 2017-01-04 2020-03-03 Cree, Inc. Stabilized, high-doped silicon carbide
CN110029393A (zh) * 2019-05-29 2019-07-19 孟静 碳化硅制备装置
CN110016713A (zh) * 2019-05-29 2019-07-16 孟静 碳化硅制备方法
CN115821362B (zh) * 2022-11-01 2025-08-29 中国科学院物理研究所 用于制备n型SiC单晶的方法
CN118147754A (zh) * 2024-04-17 2024-06-07 苏州清研半导体科技有限公司 一种长晶熔体、碳化硅单晶的制备方法和碳化硅单晶

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04193798A (ja) * 1990-11-27 1992-07-13 Toshiba Corp ＳｉＣ単結晶の製造方法
US5679153A (en) * 1994-11-30 1997-10-21 Cree Research, Inc. Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures
JP2000264790A (ja) * 1999-03-17 2000-09-26 Hitachi Ltd 炭化珪素単結晶の製造方法
DE60324409D1 (de) * 2002-04-15 2008-12-11 Sumitomo Metal Ind Verfahren zur herstellung eines siliciumcarbid-einkristalles
US7520930B2 (en) * 2002-04-15 2009-04-21 Sumitomo Metal Industries, Ltd. Silicon carbide single crystal and a method for its production
JP4196791B2 (ja) * 2003-09-08 2008-12-17 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法
JP4225296B2 (ja) * 2005-06-20 2009-02-18 トヨタ自動車株式会社 炭化珪素単結晶の製造方法
JP4419937B2 (ja) * 2005-09-16 2010-02-24 住友金属工業株式会社 炭化珪素単結晶の製造方法
JP4661571B2 (ja) * 2005-12-08 2011-03-30 トヨタ自動車株式会社 炭化珪素単結晶の製造方法
JP4179331B2 (ja) * 2006-04-07 2008-11-12 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法

Also Published As

Publication number Publication date
EP2155933B1 (de) 2011-09-14
US20100083896A1 (en) 2010-04-08
CN101680113B (zh) 2012-05-02
EP2155933A2 (de) 2010-02-24
CN101680113A (zh) 2010-03-24
JP4811354B2 (ja) 2011-11-09
WO2008155673A3 (en) 2009-03-19
KR101083855B1 (ko) 2011-11-15
WO2008155673A2 (en) 2008-12-24
JP2008303125A (ja) 2008-12-18
WO2008155673A8 (en) 2009-08-20
KR20100007977A (ko) 2010-01-22

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