ATE525800T1 - Hochleistungs-doherty-verstärker - Google Patents

Hochleistungs-doherty-verstärker

Info

Publication number
ATE525800T1
ATE525800T1 AT03787936T AT03787936T ATE525800T1 AT E525800 T1 ATE525800 T1 AT E525800T1 AT 03787936 T AT03787936 T AT 03787936T AT 03787936 T AT03787936 T AT 03787936T AT E525800 T1 ATE525800 T1 AT E525800T1
Authority
AT
Austria
Prior art keywords
input
output
transistor
peak
terminal
Prior art date
Application number
AT03787936T
Other languages
English (en)
Inventor
Igor Blednov
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE525800T1 publication Critical patent/ATE525800T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/04—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in discharge-tube amplifiers
    • H03F1/06—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in discharge-tube amplifiers to raise the efficiency of amplifying modulated radio frequency waves; to raise the efficiency of amplifiers acting also as modulators
    • H03F1/07—Doherty-type amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
AT03787936T 2002-08-19 2003-07-18 Hochleistungs-doherty-verstärker ATE525800T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP02078421 2002-08-19
PCT/IB2003/003278 WO2004017512A1 (en) 2002-08-19 2003-07-18 High power doherty amplifier

Publications (1)

Publication Number Publication Date
ATE525800T1 true ATE525800T1 (de) 2011-10-15

Family

ID=31725472

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03787936T ATE525800T1 (de) 2002-08-19 2003-07-18 Hochleistungs-doherty-verstärker

Country Status (8)

Country Link
US (1) US7078976B2 (de)
EP (1) EP1532731B1 (de)
JP (1) JP2005536922A (de)
KR (1) KR20050046731A (de)
CN (1) CN100477494C (de)
AT (1) ATE525800T1 (de)
AU (1) AU2003247109A1 (de)
WO (1) WO2004017512A1 (de)

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Also Published As

Publication number Publication date
US7078976B2 (en) 2006-07-18
JP2005536922A (ja) 2005-12-02
EP1532731A2 (de) 2005-05-25
KR20050046731A (ko) 2005-05-18
US20050231278A1 (en) 2005-10-20
CN1675826A (zh) 2005-09-28
WO2004017512A1 (en) 2004-02-26
CN100477494C (zh) 2009-04-08
WO2004017512A9 (en) 2005-02-17
AU2003247109A1 (en) 2004-03-03
EP1532731B1 (de) 2011-09-21

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