ATE527697T1 - Lichtemittierendes halbleiterbauelement - Google Patents

Lichtemittierendes halbleiterbauelement

Info

Publication number
ATE527697T1
ATE527697T1 AT10153590T AT10153590T ATE527697T1 AT E527697 T1 ATE527697 T1 AT E527697T1 AT 10153590 T AT10153590 T AT 10153590T AT 10153590 T AT10153590 T AT 10153590T AT E527697 T1 ATE527697 T1 AT E527697T1
Authority
AT
Austria
Prior art keywords
light emitting
emitting structure
light
semiconductor component
emitting semiconductor
Prior art date
Application number
AT10153590T
Other languages
English (en)
Inventor
Hwan Hee Jeong
Original Assignee
Lg Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Innotek Co Ltd filed Critical Lg Innotek Co Ltd
Application granted granted Critical
Publication of ATE527697T1 publication Critical patent/ATE527697T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers

Landscapes

  • Led Devices (AREA)
AT10153590T 2009-02-17 2010-02-15 Lichtemittierendes halbleiterbauelement ATE527697T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020090013157A KR101014136B1 (ko) 2009-02-17 2009-02-17 반도체 발광소자 및 그 제조방법

Publications (1)

Publication Number Publication Date
ATE527697T1 true ATE527697T1 (de) 2011-10-15

Family

ID=42244075

Family Applications (1)

Application Number Title Priority Date Filing Date
AT10153590T ATE527697T1 (de) 2009-02-17 2010-02-15 Lichtemittierendes halbleiterbauelement

Country Status (5)

Country Link
US (1) US8324643B2 (de)
EP (2) EP2219240B1 (de)
KR (1) KR101014136B1 (de)
CN (1) CN101807635B (de)
AT (1) ATE527697T1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101020963B1 (ko) 2010-04-23 2011-03-09 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
US9136432B2 (en) 2010-12-28 2015-09-15 Seoul Viosys Co., Ltd. High efficiency light emitting diode
JP6013931B2 (ja) * 2013-02-08 2016-10-25 株式会社東芝 半導体発光素子
DE102013103216A1 (de) * 2013-03-28 2014-10-02 Osram Opto Semiconductors Gmbh Strahlung emittierender Halbleiterchip
CN109449077A (zh) * 2018-10-25 2019-03-08 山东大学 一种光电性能优异的多元非晶金属氧化物半导体薄膜的制备方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0487381A (ja) 1990-07-31 1992-03-19 Eastman Kodak Japan Kk 発光ダイオードアレイチップ
EP2262007B1 (de) * 2002-01-28 2016-11-23 Nichia Corporation Nitrid-Halbleiterelement mit Trägersubstrat
TW577178B (en) * 2002-03-04 2004-02-21 United Epitaxy Co Ltd High efficient reflective metal layer of light emitting diode
US6903381B2 (en) 2003-04-24 2005-06-07 Opto Tech Corporation Light-emitting diode with cavity containing a filler
KR100670928B1 (ko) 2004-11-29 2007-01-17 서울옵토디바이스주식회사 ＧａＮ계 화합물 반도체 발광 소자 및 그 제조 방법
US7335924B2 (en) * 2005-07-12 2008-02-26 Visual Photonics Epitaxy Co., Ltd. High-brightness light emitting diode having reflective layer
KR100640496B1 (ko) * 2005-11-23 2006-11-01 삼성전기주식회사 수직구조 질화갈륨계 발광다이오드 소자
JP4946195B2 (ja) * 2006-06-19 2012-06-06 サンケン電気株式会社 半導体発光素子及びその製造方法
JP5126875B2 (ja) * 2006-08-11 2013-01-23 シャープ株式会社 窒化物半導体発光素子の製造方法
KR100867541B1 (ko) * 2006-11-14 2008-11-06 삼성전기주식회사 수직형 발광 소자의 제조 방법
DE102007029370A1 (de) * 2007-05-04 2008-11-06 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
JP2010534943A (ja) 2007-07-26 2010-11-11 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア Ｐ型表面を有する発光ダイオード
JP5223102B2 (ja) * 2007-08-08 2013-06-26 豊田合成株式会社 フリップチップ型発光素子
US8026527B2 (en) * 2007-12-06 2011-09-27 Bridgelux, Inc. LED structure
TWI370560B (en) * 2007-12-14 2012-08-11 Delta Electronics Inc Light-emitting diode device and manufacturing method thereof

Also Published As

Publication number Publication date
CN101807635A (zh) 2010-08-18
KR20100093977A (ko) 2010-08-26
KR101014136B1 (ko) 2011-02-10
EP2328189A1 (de) 2011-06-01
EP2219240A2 (de) 2010-08-18
US20100207128A1 (en) 2010-08-19
EP2219240B1 (de) 2011-10-05
EP2328189B1 (de) 2016-09-07
CN101807635B (zh) 2013-04-03
US8324643B2 (en) 2012-12-04
EP2219240A3 (de) 2010-09-01

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