ATE529378T1 - Verfahren zum ätzen einer opferschicht aus siliziumoxid - Google Patents

Verfahren zum ätzen einer opferschicht aus siliziumoxid

Info

Publication number
ATE529378T1
ATE529378T1 AT07789096T AT07789096T ATE529378T1 AT E529378 T1 ATE529378 T1 AT E529378T1 AT 07789096 T AT07789096 T AT 07789096T AT 07789096 T AT07789096 T AT 07789096T AT E529378 T1 ATE529378 T1 AT E529378T1
Authority
AT
Austria
Prior art keywords
oxide layer
silicon oxide
microstructure
etching
layer
Prior art date
Application number
AT07789096T
Other languages
English (en)
Inventor
Anthony O'hara
Original Assignee
Memsstar Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memsstar Ltd filed Critical Memsstar Ltd
Application granted granted Critical
Publication of ATE529378T1 publication Critical patent/ATE529378T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
    • B81C1/00468—Releasing structures
    • B81C1/00476—Releasing structures removing a sacrificial layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0133—Wet etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0135—Controlling etch progression
    • B81C2201/0138—Monitoring physical parameters in the etching chamber, e.g. pressure, temperature or gas composition

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
AT07789096T 2006-08-02 2007-08-02 Verfahren zum ätzen einer opferschicht aus siliziumoxid ATE529378T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0615343.1A GB0615343D0 (en) 2006-08-02 2006-08-02 Improved etch process
PCT/GB2007/002932 WO2008015434A1 (en) 2006-08-02 2007-08-02 Method of etching a sacrificial silicon oxide layer

Publications (1)

Publication Number Publication Date
ATE529378T1 true ATE529378T1 (de) 2011-11-15

Family

ID=37027097

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07789096T ATE529378T1 (de) 2006-08-02 2007-08-02 Verfahren zum ätzen einer opferschicht aus siliziumoxid

Country Status (9)

Country Link
US (1) US8679354B2 (de)
EP (1) EP2046677B1 (de)
JP (1) JP5290172B2 (de)
CN (1) CN101500935B (de)
AT (1) ATE529378T1 (de)
DK (1) DK2046677T3 (de)
ES (1) ES2375513T3 (de)
GB (1) GB0615343D0 (de)
WO (1) WO2008015434A1 (de)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2487716B (en) * 2011-01-24 2015-06-03 Memsstar Ltd Vapour Etch of Silicon Dioxide with Improved Selectivity
JP5823160B2 (ja) * 2011-05-11 2015-11-25 東京エレクトロン株式会社 堆積物除去方法
JP5859262B2 (ja) * 2011-09-29 2016-02-10 東京エレクトロン株式会社 堆積物除去方法
JP6017170B2 (ja) * 2012-04-18 2016-10-26 東京エレクトロン株式会社 堆積物除去方法及びガス処理装置
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
CN104860259A (zh) * 2014-02-26 2015-08-26 盛美半导体设备（上海）有限公司 低压气相刻蚀方法
CN104867845B (zh) * 2014-02-26 2019-05-17 盛美半导体设备（上海）有限公司 气相刻蚀装置
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
CN108431929B (zh) * 2015-11-14 2023-03-31 东京毅力科创株式会社 使用稀释的tmah处理微电子基底的方法
JP6601257B2 (ja) * 2016-02-19 2019-11-06 東京エレクトロン株式会社 基板処理方法
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
CN107919298B (zh) * 2016-10-08 2021-01-29 北京北方华创微电子装备有限公司 气相刻蚀装置及设备
US11107699B2 (en) 2016-10-08 2021-08-31 Beijing Naura Microelectronics Equipment Co., Ltd. Semiconductor manufacturing process
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10497579B2 (en) * 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
TWI716818B (zh) 2018-02-28 2021-01-21 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) * 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
EP3653567B1 (de) 2018-11-19 2024-01-10 Sciosense B.V. Verfahren zur herstellung einer integrierten mems-wandlervorrichtung und integrierte mems-wandlervorrichtung
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
GB2598263B (en) * 2019-11-14 2022-09-21 Memsstar Ltd Method of manufacturing a microstructure
WO2022047247A1 (en) * 2020-08-28 2022-03-03 Utica Leaseco, Llc Systems and methods for supplying an etchant in a gaseous state during epitaxial lift-off (flo) processing
GB2606747B (en) 2021-05-19 2024-11-20 Memsstar Ltd Method of manufacturing a microstructure
CN116062681B (zh) * 2022-11-30 2025-06-24 华东光电集成器件研究所 一种mems悬浮敏感结构的制作方法
GB2629555A (en) * 2023-01-25 2024-11-06 Memsstar Ltd Method of manufacturing a microstructure

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4749440A (en) * 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
US5013693A (en) * 1989-02-16 1991-05-07 Wisconsin Alumni Research Foundation Formation of microstructures with removal of liquid by freezing and sublimation
US5954911A (en) * 1995-10-12 1999-09-21 Semitool, Inc. Semiconductor processing using vapor mixtures
DE19704454C2 (de) * 1997-02-06 2000-03-02 Bosch Gmbh Robert Verfahren zur Herstellung oberflächenmikromechanischer Strukturen mittels Ätzung in der Dampfphase
US6065481A (en) * 1997-03-26 2000-05-23 Fsi International, Inc. Direct vapor delivery of enabling chemical for enhanced HF etch process performance
US6238580B1 (en) * 1998-02-20 2001-05-29 The Aerospace Corporation Method of HF vapor release of microstructures
JP3331957B2 (ja) * 1998-03-31 2002-10-07 株式会社豊田中央研究所 被処理構造体の表面処理方法
US6740247B1 (en) * 1999-02-05 2004-05-25 Massachusetts Institute Of Technology HF vapor phase wafer cleaning and oxide etching
DE19910983A1 (de) * 1999-03-12 2000-09-21 Bosch Gmbh Robert Vorrichtung und Verfahren zur Bestimmung der lateralen Unterätzung einer strukturierten Oberflächenschicht
DE19941042A1 (de) * 1999-08-28 2001-03-15 Bosch Gmbh Robert Verfahren zur Herstellung oberflächenmikromechanischer Strukturen durch Ätzung mit einem dampfförmigen, flußsäurehaltigen Ätzmedium
EP1258035A4 (de) * 2000-02-01 2008-12-24 Analog Devices Inc Prozess zur bearbeitung auf wafer-ebene zur verringerung der haftreibung und passivierung mikrobearbeiteteroberflächen und hierfür verwendete zusammensetzungen
DE10015380A1 (de) * 2000-03-28 2001-10-11 Nmi Univ Tuebingen Mikrofluidkomponente und Verfahren zur Oberflächenbehandlung einer solchen
JP3435643B2 (ja) * 2001-03-29 2003-08-11 株式会社豊田中央研究所 シリコン系構造体の製造装置と製造方法
US6936183B2 (en) * 2001-10-17 2005-08-30 Applied Materials, Inc. Etch process for etching microstructures
US6666979B2 (en) * 2001-10-29 2003-12-23 Applied Materials, Inc. Dry etch release of MEMS structures
US7279431B2 (en) * 2003-06-18 2007-10-09 Semitool, Inc. Vapor phase etching MEMS devices
WO2005034205A2 (en) * 2003-10-06 2005-04-14 Dow Corning Corporation Self assembling nanoparticle-polymer hybrids
US7625603B2 (en) * 2003-11-14 2009-12-01 Robert Bosch Gmbh Crack and residue free conformal deposited silicon oxide with predictable and uniform etching characteristics
US7365016B2 (en) * 2004-12-27 2008-04-29 Dalsa Semiconductor Inc. Anhydrous HF release of process for MEMS devices
CN1694577B (zh) * 2005-06-09 2011-04-06 复旦大学 单片硅基微型电容式麦克风及其制作方法

Also Published As

Publication number Publication date
EP2046677B1 (de) 2011-10-19
DK2046677T3 (da) 2012-02-13
CN101500935B (zh) 2012-06-27
JP5290172B2 (ja) 2013-09-18
GB0615343D0 (en) 2006-09-13
JP2009545460A (ja) 2009-12-24
CN101500935A (zh) 2009-08-05
EP2046677A1 (de) 2009-04-15
WO2008015434A1 (en) 2008-02-07
US8679354B2 (en) 2014-03-25
ES2375513T3 (es) 2012-03-01
US20090308843A1 (en) 2009-12-17

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