ATE540403T1 - Molekularer quantenspeicher - Google Patents

Molekularer quantenspeicher

Info

Publication number
ATE540403T1
ATE540403T1 AT06844492T AT06844492T ATE540403T1 AT E540403 T1 ATE540403 T1 AT E540403T1 AT 06844492 T AT06844492 T AT 06844492T AT 06844492 T AT06844492 T AT 06844492T AT E540403 T1 ATE540403 T1 AT E540403T1
Authority
AT
Austria
Prior art keywords
quantum memory
molecular quantum
polarized
molecule
source
Prior art date
Application number
AT06844492T
Other languages
English (en)
Inventor
Eric Hannah
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Application granted granted Critical
Publication of ATE540403T1 publication Critical patent/ATE540403T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G11B9/149—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the memorising material or structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/02—Recording, reproducing, or erasing methods; Read, write or erase circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
    • G11B5/743—Patterned record carriers, wherein the magnetic recording layer is patterned into magnetic isolated data islands, e.g. discrete tracks
    • G11B5/746—Bit Patterned record carriers, wherein each magnetic isolated data island corresponds to a bit
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B2005/0002—Special dispositions or recording techniques

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Health & Medical Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biomedical Technology (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Neurology (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
AT06844492T 2005-11-30 2006-11-20 Molekularer quantenspeicher ATE540403T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/291,802 US7746689B2 (en) 2005-11-30 2005-11-30 Molecular quantum memory
PCT/US2006/045141 WO2007064540A2 (en) 2005-11-30 2006-11-20 Molecular quantum memory

Publications (1)

Publication Number Publication Date
ATE540403T1 true ATE540403T1 (de) 2012-01-15

Family

ID=37952807

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06844492T ATE540403T1 (de) 2005-11-30 2006-11-20 Molekularer quantenspeicher

Country Status (8)

Country Link
US (1) US7746689B2 (de)
EP (1) EP1955325B1 (de)
JP (1) JP5015168B2 (de)
KR (1) KR101017471B1 (de)
CN (1) CN101292291B (de)
AT (1) ATE540403T1 (de)
TW (1) TWI351734B (de)
WO (1) WO2007064540A2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9455035B2 (en) * 2006-04-26 2016-09-27 Invention Science Fund I, Llc Management of memory refresh power consumption
US8601207B2 (en) * 2006-04-26 2013-12-03 The Invention Science Fund I, Llc Management of memory refresh power consumption
JP5732194B2 (ja) 2006-05-24 2015-06-10 スティッチング カソリーケ ウニベルシテイト 磁化可能な媒体を切り替える光磁気スイッチング素子および方法
JP2010056024A (ja) * 2008-08-29 2010-03-11 Nippon Steel Corp スピン偏極電子源
US8724376B2 (en) 2011-09-15 2014-05-13 International Business Machines Corporation Antiferromagnetic storage device
CN104094349B (zh) * 2011-12-05 2016-08-24 瓦里安半导体设备公司 写入头、磁性存储装置及在磁性存储装置记录数据的方法
US9944520B2 (en) 2013-01-15 2018-04-17 Alcatel Lucent Syndrome of degraded quantum redundancy coded states
US9286154B2 (en) 2013-06-07 2016-03-15 Alcatel Lucent Error correction for entangled quantum states
US9093165B2 (en) * 2013-09-30 2015-07-28 International Business Machines Corporation Distributed current clock for nano-magnetic element array
US9762262B2 (en) 2014-06-18 2017-09-12 Alcatel Lucent Hardware-efficient syndrome extraction for entangled quantum states
CN110176254B (zh) * 2019-04-19 2020-12-29 北京大学（天津滨海）新一代信息技术研究院 一种基于分子自旋态的磁场调控存储器件及数据存储方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0591595A1 (de) 1992-10-08 1994-04-13 International Business Machines Corporation Molekulare Aufzeichnungs-/Wiedergabemethode und Aufzeichnungsmedium
US6304481B1 (en) * 1994-01-31 2001-10-16 Terastore, Inc. Method and apparatus for storing data using spin-polarized electrons
JPH10208320A (ja) * 1997-01-21 1998-08-07 Toyota Central Res & Dev Lab Inc 記憶装置
US5940802A (en) 1997-03-17 1999-08-17 The Board Of Regents Of The University Of Oklahoma Digital disease management system
US6061265A (en) * 1998-12-23 2000-05-09 Intel Corporation Quantum magnetic memory
US6388912B1 (en) * 2000-03-30 2002-05-14 Intel Corporation Quantum magnetic memory
US6639832B2 (en) * 2001-08-08 2003-10-28 Intel Corporation Quantum magnetic memory
US6625052B2 (en) * 2001-09-27 2003-09-23 Intel Corporation Write-once polymer memory with e-beam writing and reading
US6741496B2 (en) * 2001-09-27 2004-05-25 Intel Corporation Electron spin mechanisms for inducing magnetic-polarization reversal
US8553517B2 (en) * 2002-10-14 2013-10-08 Samsung Electronics Co., Ltd. Magnetic medium using spin-polarized electrons and apparatus and method of recording data on the magnetic medium
US20050162888A1 (en) * 2002-10-28 2005-07-28 Hannah Eric C. Write-once polymer memory with e-beam writing and reading
KR100681379B1 (ko) * 2003-03-07 2007-02-12 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 스핀 의존 전달 특성을 갖는 전계 효과 트랜지스터 및그것을 이용한 비휘발성 메모리
JP4113041B2 (ja) * 2003-05-14 2008-07-02 株式会社日立製作所 磁化制御方法および情報記録装置
JP4095527B2 (ja) * 2003-09-29 2008-06-04 株式会社日立製作所 磁化情報記録再生方法及び装置
JP4317503B2 (ja) * 2004-08-25 2009-08-19 株式会社日立製作所 磁化情報記録方法及び磁気記録再生装置

Also Published As

Publication number Publication date
EP1955325A2 (de) 2008-08-13
KR101017471B1 (ko) 2011-02-25
KR20080065681A (ko) 2008-07-14
WO2007064540A2 (en) 2007-06-07
CN101292291A (zh) 2008-10-22
TWI351734B (en) 2011-11-01
CN101292291B (zh) 2011-11-09
WO2007064540A3 (en) 2007-08-02
EP1955325B1 (de) 2012-01-04
TW200739822A (en) 2007-10-16
JP2009517801A (ja) 2009-04-30
US7746689B2 (en) 2010-06-29
US20070126436A1 (en) 2007-06-07
JP5015168B2 (ja) 2012-08-29

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