ATE542278T1 - Oberflächenemissionslaser und verfahren zu seiner herstellung - Google Patents

Oberflächenemissionslaser und verfahren zu seiner herstellung

Info

Publication number
ATE542278T1
ATE542278T1 AT09012110T AT09012110T ATE542278T1 AT E542278 T1 ATE542278 T1 AT E542278T1 AT 09012110 T AT09012110 T AT 09012110T AT 09012110 T AT09012110 T AT 09012110T AT E542278 T1 ATE542278 T1 AT E542278T1
Authority
AT
Austria
Prior art keywords
etching
etching region
semiconductor layer
depth
producing same
Prior art date
Application number
AT09012110T
Other languages
English (en)
Inventor
Mitsuhiro Ikuta
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE542278T1 publication Critical patent/ATE542278T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18391—Aperiodic structuring to influence the near- or far-field distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/2086—Methods of obtaining the confinement using special etching techniques lateral etch control, e.g. mask induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/209—Methods of obtaining the confinement using special etching techniques special etch stop layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
AT09012110T 2008-09-26 2009-09-23 Oberflächenemissionslaser und verfahren zu seiner herstellung ATE542278T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008247737 2008-09-26

Publications (1)

Publication Number Publication Date
ATE542278T1 true ATE542278T1 (de) 2012-02-15

Family

ID=41401576

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09012110T ATE542278T1 (de) 2008-09-26 2009-09-23 Oberflächenemissionslaser und verfahren zu seiner herstellung

Country Status (5)

Country Link
US (2) US7888149B2 (de)
EP (1) EP2169790B1 (de)
JP (1) JP5038371B2 (de)
CN (1) CN101685941B (de)
AT (1) ATE542278T1 (de)

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US8416821B2 (en) * 2010-06-11 2013-04-09 Ricoh Company, Ltd. Surface emitting laser element, surface emitting laser array, optical scanning unit, image forming apparatus and method of manufacturing surface emitting laser element
JP5950523B2 (ja) * 2010-10-16 2016-07-13 キヤノン株式会社 面発光レーザ、面発光レーザアレイ、画像形成装置
US9042421B2 (en) 2010-10-18 2015-05-26 Canon Kabushiki Kaisha Surface emitting laser, surface emitting laser array, and optical apparatus having surface emitting laser array
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TWI427879B (zh) * 2010-12-22 2014-02-21 Univ Nat Central Vertical Resonant Cavity with Infrared Profile
JP5769459B2 (ja) * 2011-03-17 2015-08-26 キヤノン株式会社 面発光レーザの製造方法及び面発光レーザアレイの製造方法
EP2533380B8 (de) * 2011-06-06 2017-08-30 Mellanox Technologies, Ltd. Hochgeschwindigkeitslaservorrichtung
CN104078844A (zh) * 2013-03-29 2014-10-01 新科实业有限公司 具有窄激光发射角度的多模垂直腔面发射激光器
EP3065237B1 (de) * 2015-03-06 2020-05-06 Caliopa NV Temperaturunempfindlicher laser
JP2018527755A (ja) 2015-09-16 2018-09-20 ホアウェイ・テクノロジーズ・カンパニー・リミテッド 半導体レーザおよび半導体レーザの加工方法
JP6747910B2 (ja) * 2016-08-10 2020-08-26 浜松ホトニクス株式会社 発光装置
US11031751B2 (en) 2016-08-10 2021-06-08 Hamamatsu Photonics K.K. Light-emitting device
US10734786B2 (en) 2016-09-07 2020-08-04 Hamamatsu Photonics K.K. Semiconductor light emitting element and light emitting device including same
US11637409B2 (en) 2017-03-27 2023-04-25 Hamamatsu Photonics K.K. Semiconductor light-emitting module and control method therefor
US11646546B2 (en) 2017-03-27 2023-05-09 Hamamatsu Photonics K.K. Semiconductor light emitting array with phase modulation regions for generating beam projection patterns
JP6959042B2 (ja) 2017-06-15 2021-11-02 浜松ホトニクス株式会社 発光装置
KR102460376B1 (ko) * 2017-10-27 2022-10-31 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
DE112018006285T5 (de) 2017-12-08 2021-01-28 Hamamatsu Photonics K.K. Lichtemittierende vorrichtung und herstellungsverfahren dafür
DE112019002892T5 (de) 2018-06-08 2021-02-25 Hamamatsu Photonics K.K. Lichtemittierendes Element
WO2020226108A1 (ja) * 2019-05-07 2020-11-12 ローム株式会社 面発光レーザ装置
JP2021022679A (ja) * 2019-07-29 2021-02-18 住友電気工業株式会社 面発光レーザおよびその製造方法
CN115332943B (zh) * 2022-07-13 2025-10-03 深圳市嘉敏利光电有限公司 一种垂直腔面发射激光器及其制备方法
CN116314536B (zh) * 2023-05-23 2023-08-15 南昌凯迅光电股份有限公司 具有氧化层结构反极性圆孔发光led芯片及其制作方法

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JP5171318B2 (ja) 2008-03-05 2013-03-27 キヤノン株式会社 面発光レーザアレイ
JP5388666B2 (ja) * 2008-04-21 2014-01-15 キヤノン株式会社 面発光レーザ
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JP4639249B2 (ja) 2008-07-31 2011-02-23 キヤノン株式会社 面発光レーザの製造方法及び面発光レーザアレイの製造方法、面発光レーザ及び面発光レーザアレイ、面発光レーザアレイを備えている光学機器

Also Published As

Publication number Publication date
EP2169790A1 (de) 2010-03-31
US20110090929A1 (en) 2011-04-21
CN101685941A (zh) 2010-03-31
US20100080258A1 (en) 2010-04-01
JP5038371B2 (ja) 2012-10-03
US7888149B2 (en) 2011-02-15
EP2169790B1 (de) 2012-01-18
CN101685941B (zh) 2011-10-05
US8073032B2 (en) 2011-12-06
JP2010103498A (ja) 2010-05-06

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