ATE515084T1 - Verfahren zur herstellung eines oberflächenemissionslasers, verfahren zur herstellung eines oberflächenemissionslaserarrays,oberflächenemis ionslaser, oberflächenemissionslaserarray und optische vorrichtung mit dem oberflächenemissionslaserarray - Google Patents
Verfahren zur herstellung eines oberflächenemissionslasers, verfahren zur herstellung eines oberflächenemissionslaserarrays,oberflächenemis ionslaser, oberflächenemissionslaserarray und optische vorrichtung mit dem oberflächenemissionslaserarrayInfo
- Publication number
- ATE515084T1 ATE515084T1 AT09009750T AT09009750T ATE515084T1 AT E515084 T1 ATE515084 T1 AT E515084T1 AT 09009750 T AT09009750 T AT 09009750T AT 09009750 T AT09009750 T AT 09009750T AT E515084 T1 ATE515084 T1 AT E515084T1
- Authority
- AT
- Austria
- Prior art keywords
- emission laser
- surface emission
- laser array
- producing
- forming
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
- H01S5/18391—Aperiodic structuring to influence the near- or far-field distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
- H01S2301/166—Single transverse or lateral mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/176—Specific passivation layers on surfaces other than the emission facet
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
- H01S5/18347—Mesa comprising active layer
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008198951A JP4639249B2 (ja) | 2008-07-31 | 2008-07-31 | 面発光レーザの製造方法及び面発光レーザアレイの製造方法、面発光レーザ及び面発光レーザアレイ、面発光レーザアレイを備えている光学機器 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE515084T1 true ATE515084T1 (de) | 2011-07-15 |
Family
ID=41202415
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT09009750T ATE515084T1 (de) | 2008-07-31 | 2009-07-28 | Verfahren zur herstellung eines oberflächenemissionslasers, verfahren zur herstellung eines oberflächenemissionslaserarrays,oberflächenemis ionslaser, oberflächenemissionslaserarray und optische vorrichtung mit dem oberflächenemissionslaserarray |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7863061B2 (de) |
| EP (1) | EP2149945B1 (de) |
| JP (1) | JP4639249B2 (de) |
| CN (2) | CN101640376B (de) |
| AT (1) | ATE515084T1 (de) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5388666B2 (ja) * | 2008-04-21 | 2014-01-15 | キヤノン株式会社 | 面発光レーザ |
| JP4639249B2 (ja) * | 2008-07-31 | 2011-02-23 | キヤノン株式会社 | 面発光レーザの製造方法及び面発光レーザアレイの製造方法、面発光レーザ及び面発光レーザアレイ、面発光レーザアレイを備えている光学機器 |
| JP5106487B2 (ja) * | 2008-07-31 | 2012-12-26 | キヤノン株式会社 | 面発光レーザの製造方法及び面発光レーザアレイの製造方法、該製造方法による面発光レーザアレイを備えている光学機器 |
| JP5038371B2 (ja) * | 2008-09-26 | 2012-10-03 | キヤノン株式会社 | 面発光レーザの製造方法 |
| JP5850075B2 (ja) * | 2009-05-28 | 2016-02-03 | 株式会社リコー | 面発光レーザ素子の製造方法 |
| KR100999779B1 (ko) * | 2010-02-01 | 2010-12-08 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법 및 발광소자 패키지 |
| JP2012009727A (ja) * | 2010-06-28 | 2012-01-12 | Fuji Xerox Co Ltd | 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置 |
| JP5950523B2 (ja) | 2010-10-16 | 2016-07-13 | キヤノン株式会社 | 面発光レーザ、面発光レーザアレイ、画像形成装置 |
| JP5725804B2 (ja) | 2010-11-05 | 2015-05-27 | キヤノン株式会社 | 面発光レーザ及び面発光レーザアレイ、面発光レーザの製造方法及び面発光レーザアレイの製造方法、面発光レーザアレイを備えた光学機器 |
| JP5893246B2 (ja) * | 2010-11-08 | 2016-03-23 | キヤノン株式会社 | 面発光レーザ及び面発光レーザアレイ、面発光レーザの製造方法及び面発光レーザアレイの製造方法、面発光レーザアレイを備えた光学機器 |
| JP5743520B2 (ja) * | 2010-12-10 | 2015-07-01 | キヤノン株式会社 | 面発光レーザ及び画像形成装置 |
| JP5769459B2 (ja) * | 2011-03-17 | 2015-08-26 | キヤノン株式会社 | 面発光レーザの製造方法及び面発光レーザアレイの製造方法 |
| CN102255241B (zh) * | 2011-05-26 | 2014-12-17 | 长春理工大学 | 一种基于表面浮雕结构的环形腔面发射半导体激光器 |
| JP2012248795A (ja) * | 2011-05-31 | 2012-12-13 | Toshiba Corp | 半導体発光素子およびその製造方法 |
| JP2013093439A (ja) * | 2011-10-26 | 2013-05-16 | Seiko Epson Corp | 面発光型半導体レーザーの製造方法 |
| KR20130085763A (ko) * | 2012-01-20 | 2013-07-30 | 삼성전자주식회사 | 광 집적 회로용 혼성 레이저 광원 |
| US8731012B2 (en) * | 2012-01-24 | 2014-05-20 | Fuji Xerox Co., Ltd. | Surface emitting semiconductor laser and its manufacturing method, surface emitting semiconductor laser device, optical transmitter, and information processor |
| JP6015220B2 (ja) * | 2012-08-07 | 2016-10-26 | 富士ゼロックス株式会社 | 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置 |
| CN104078844A (zh) * | 2013-03-29 | 2014-10-01 | 新科实业有限公司 | 具有窄激光发射角度的多模垂直腔面发射激光器 |
| CN104078843A (zh) * | 2013-03-29 | 2014-10-01 | 新科实业有限公司 | 具有窄激光发射角度的多模垂直腔面发射激光器 |
| JP2015035596A (ja) * | 2013-07-12 | 2015-02-19 | キヤノン株式会社 | 面発光レーザ、光干渉断層像取得装置 |
| JP6004063B1 (ja) * | 2015-09-09 | 2016-10-05 | 富士ゼロックス株式会社 | 面発光型半導体レーザ素子の製造方法 |
| CN107710529B (zh) * | 2015-09-16 | 2019-12-17 | 华为技术有限公司 | 半导体激光器及其加工方法 |
| US9853416B2 (en) * | 2016-01-11 | 2017-12-26 | Alcatel-Lucent Usa Inc. | Multimode vertical-cavity surface-emitting laser |
| WO2018132521A1 (en) | 2017-01-16 | 2018-07-19 | Canthus Technologies Llc | Combining light-emitting elements of differing divergence on the same substrate |
| US11381060B2 (en) | 2017-04-04 | 2022-07-05 | Apple Inc. | VCSELs with improved optical and electrical confinement |
| JP7056511B2 (ja) * | 2018-10-25 | 2022-04-19 | 住友電気工業株式会社 | 面発光レーザの製造方法 |
| CN113875104A (zh) * | 2019-01-17 | 2021-12-31 | 阵列光子学公司 | Vcsel空间模式和输出光束的控制 |
| EP3888138A1 (de) | 2019-02-21 | 2021-10-06 | Apple Inc. | Indiumphosphid-vcsel mit dielektrischem bragg-spiegel |
| CN113711450B (zh) | 2019-04-01 | 2025-02-18 | 苹果公司 | 具有紧密节距和高效率的vcsel阵列 |
| US11374381B1 (en) | 2019-06-10 | 2022-06-28 | Apple Inc. | Integrated laser module |
| US11454820B2 (en) * | 2019-10-17 | 2022-09-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multifunctional collimator for contact image sensors |
| US11448891B2 (en) | 2019-10-17 | 2022-09-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multifunctional collimator for contact image sensors |
| EP4073585A1 (de) | 2019-12-10 | 2022-10-19 | TRUMPF Photonic Components GmbH | Verfahren zur lithographischen formung einer optischen struktur in einem halbleitersubstrat |
| CN110957635B (zh) * | 2020-02-25 | 2020-09-01 | 常州纵慧芯光半导体科技有限公司 | 一种实现偏振控制的vcsel器件及其制备方法 |
| CN114583550A (zh) * | 2022-03-02 | 2022-06-03 | 深圳博升光电科技有限公司 | 垂直腔面发射激光器及具有其的电子设备、制造方法 |
| CN114976864A (zh) * | 2022-05-19 | 2022-08-30 | 福建慧芯激光科技有限公司 | 一种带浮雕的高效垂直腔面eml芯片 |
| CN115313151B (zh) * | 2022-08-02 | 2026-01-16 | 深圳市嘉敏利光电有限公司 | 一种垂直腔面发射激光器 |
| US12494618B2 (en) | 2022-09-14 | 2025-12-09 | Apple Inc. | Vertical emitters with integrated final-stage transistor switch |
| CN117913659B (zh) * | 2024-03-18 | 2024-06-07 | 江西德瑞光电技术有限责任公司 | 一种vcsel芯片及其制备方法、vcsel激光器 |
| CN119029106A (zh) * | 2024-10-28 | 2024-11-26 | 江西科技师范大学 | 一种led芯片制备方法及led芯片 |
Family Cites Families (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5258316A (en) * | 1992-03-26 | 1993-11-02 | Motorola, Inc. | Patterened mirror vertical cavity surface emitting laser |
| JP2005072623A (ja) | 1994-07-04 | 2005-03-17 | Mitsubishi Chemicals Corp | 半導体素子 |
| FR2741483B1 (fr) * | 1995-11-21 | 1998-01-02 | Thomson Csf | Dispositif optoelectronique a puits quantiques |
| JP3783411B2 (ja) * | 1997-08-15 | 2006-06-07 | 富士ゼロックス株式会社 | 表面発光型半導体レーザ |
| JP2001284722A (ja) * | 2000-03-29 | 2001-10-12 | Seiko Epson Corp | 面発光型半導体レーザおよびその製造方法 |
| US6746948B2 (en) * | 2001-09-17 | 2004-06-08 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating semiconductor light-emitting device |
| JP4507489B2 (ja) * | 2002-12-16 | 2010-07-21 | 富士ゼロックス株式会社 | 面発光型半導体レーザ及びその製造方法 |
| JP2005191285A (ja) | 2003-12-25 | 2005-07-14 | Mitsubishi Chemicals Corp | AlGaAs系化合物半導体層用エッチング液、エッチング方法および半導体基板 |
| US7033853B2 (en) * | 2004-03-26 | 2006-04-25 | Infineon Technologies Ag | Method for producing a vertically emitting laser |
| US20050265415A1 (en) | 2004-05-28 | 2005-12-01 | Lambkin John D | Laser diode and method of manufacture |
| JP4899344B2 (ja) * | 2004-06-29 | 2012-03-21 | 富士ゼロックス株式会社 | 表面発光型半導体レーザおよびその製造方法 |
| JP4919639B2 (ja) * | 2004-10-13 | 2012-04-18 | 株式会社リコー | 面発光レーザ素子および面発光レーザアレイおよび面発光レーザ素子の製造方法および面発光レーザモジュールおよび電子写真システムおよび光通信システムおよび光インターコネクションシステム |
| KR20080049705A (ko) | 2005-06-08 | 2008-06-04 | 파이어콤스 리미티드 | 면방출 광학 장치 |
| JP5376104B2 (ja) * | 2005-07-04 | 2013-12-25 | ソニー株式会社 | 面発光型半導体レーザ |
| JP4892940B2 (ja) * | 2005-11-29 | 2012-03-07 | 富士ゼロックス株式会社 | 面発光型半導体レーザ装置およびその製造方法 |
| US7408967B2 (en) * | 2005-12-19 | 2008-08-05 | Emcore Corporation | Method of fabricating single mode VCSEL for optical mouse |
| JP4548329B2 (ja) * | 2005-12-19 | 2010-09-22 | セイコーエプソン株式会社 | 面発光型半導体レーザ |
| US7778305B2 (en) * | 2005-12-22 | 2010-08-17 | Université Jean-Monnet | Mirror structure and laser device comprising such a mirror structure |
| JP4533339B2 (ja) | 2006-04-12 | 2010-09-01 | キヤノン株式会社 | 面発光レーザ |
| US7697588B2 (en) | 2006-11-02 | 2010-04-13 | Canon Kabushiki Kaisha | Structure having photonic crystal and surface-emitting laser using the same |
| US7499481B2 (en) * | 2006-11-14 | 2009-03-03 | Canon Kabushiki Kaisha | Surface-emitting laser and method for producing the same |
| US7535946B2 (en) | 2006-11-16 | 2009-05-19 | Canon Kabushiki Kaisha | Structure using photonic crystal and surface emitting laser |
| JP4305554B2 (ja) * | 2007-02-28 | 2009-07-29 | ソニー株式会社 | 半導体レーザの製造方法 |
| JP4992503B2 (ja) * | 2007-03-27 | 2012-08-08 | ソニー株式会社 | 面発光型半導体レーザおよびその製造方法 |
| JP4766704B2 (ja) | 2007-04-20 | 2011-09-07 | キヤノン株式会社 | 面発光レーザ |
| JP4350774B2 (ja) | 2007-07-31 | 2009-10-21 | キヤノン株式会社 | 面発光レーザ |
| JP4347369B2 (ja) * | 2007-07-31 | 2009-10-21 | キヤノン株式会社 | 面発光レーザの製造方法 |
| JP5137514B2 (ja) | 2007-09-27 | 2013-02-06 | キヤノン株式会社 | 2次元面発光レーザアレイ |
| JP4709259B2 (ja) | 2007-10-12 | 2011-06-22 | キヤノン株式会社 | 面発光レーザ |
| JP5171318B2 (ja) | 2008-03-05 | 2013-03-27 | キヤノン株式会社 | 面発光レーザアレイ |
| JP5388666B2 (ja) | 2008-04-21 | 2014-01-15 | キヤノン株式会社 | 面発光レーザ |
| JP4639249B2 (ja) * | 2008-07-31 | 2011-02-23 | キヤノン株式会社 | 面発光レーザの製造方法及び面発光レーザアレイの製造方法、面発光レーザ及び面発光レーザアレイ、面発光レーザアレイを備えている光学機器 |
| JP5106487B2 (ja) * | 2008-07-31 | 2012-12-26 | キヤノン株式会社 | 面発光レーザの製造方法及び面発光レーザアレイの製造方法、該製造方法による面発光レーザアレイを備えている光学機器 |
| JP4872987B2 (ja) * | 2008-08-25 | 2012-02-08 | ソニー株式会社 | 面発光型半導体レーザ |
| JP5038371B2 (ja) * | 2008-09-26 | 2012-10-03 | キヤノン株式会社 | 面発光レーザの製造方法 |
| US8299351B2 (en) * | 2009-02-24 | 2012-10-30 | Hong Kong Applied Science And Technology Research Institute Co., Ltd. | Epitaxial growth of III-V compounds on (111) silicon for solar cells |
-
2008
- 2008-07-31 JP JP2008198951A patent/JP4639249B2/ja not_active Expired - Fee Related
-
2009
- 2009-07-27 US US12/509,635 patent/US7863061B2/en not_active Expired - Fee Related
- 2009-07-28 EP EP09009750A patent/EP2149945B1/de not_active Not-in-force
- 2009-07-28 CN CN2009101650152A patent/CN101640376B/zh not_active Expired - Fee Related
- 2009-07-28 AT AT09009750T patent/ATE515084T1/de not_active IP Right Cessation
- 2009-07-28 CN CN201110102885.2A patent/CN102208752B/zh not_active Expired - Fee Related
-
2010
- 2010-12-02 US US12/958,987 patent/US8068529B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP4639249B2 (ja) | 2011-02-23 |
| CN102208752B (zh) | 2013-06-12 |
| US20100029027A1 (en) | 2010-02-04 |
| CN101640376A (zh) | 2010-02-03 |
| US20110076058A1 (en) | 2011-03-31 |
| US8068529B2 (en) | 2011-11-29 |
| US7863061B2 (en) | 2011-01-04 |
| CN102208752A (zh) | 2011-10-05 |
| EP2149945A1 (de) | 2010-02-03 |
| EP2149945B1 (de) | 2011-06-29 |
| CN101640376B (zh) | 2011-10-12 |
| JP2010040600A (ja) | 2010-02-18 |
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