ATE543209T1 - Halbleitende struktur auf einem substrat mit starker rauheit - Google Patents

Halbleitende struktur auf einem substrat mit starker rauheit

Info

Publication number
ATE543209T1
ATE543209T1 AT04710053T AT04710053T ATE543209T1 AT E543209 T1 ATE543209 T1 AT E543209T1 AT 04710053 T AT04710053 T AT 04710053T AT 04710053 T AT04710053 T AT 04710053T AT E543209 T1 ATE543209 T1 AT E543209T1
Authority
AT
Austria
Prior art keywords
substrate
layer
high roughness
semiconductive structure
semiconductor structure
Prior art date
Application number
AT04710053T
Other languages
English (en)
Inventor
Olivier Rayssac
Muriel Martinez
Sephorah Bisson
Lionel Portigliatti
Original Assignee
S O I Tec Silicon Insulator Technologies
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by S O I Tec Silicon Insulator Technologies filed Critical S O I Tec Silicon Insulator Technologies
Application granted granted Critical
Publication of ATE543209T1 publication Critical patent/ATE543209T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1924—Preparing SOI wafers with separation/delamination along a porous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
  • Laminated Bodies (AREA)
AT04710053T 2003-02-12 2004-02-11 Halbleitende struktur auf einem substrat mit starker rauheit ATE543209T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0301657A FR2851079B1 (fr) 2003-02-12 2003-02-12 Structure semi-conductrice sur substrat a forte rugosite
PCT/FR2004/000305 WO2004075287A1 (fr) 2003-02-12 2004-02-11 Structure semi-conductrice sur substrat a forte rugosite

Publications (1)

Publication Number Publication Date
ATE543209T1 true ATE543209T1 (de) 2012-02-15

Family

ID=32731972

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04710053T ATE543209T1 (de) 2003-02-12 2004-02-11 Halbleitende struktur auf einem substrat mit starker rauheit

Country Status (7)

Country Link
EP (1) EP1593152B1 (de)
JP (1) JP4874790B2 (de)
KR (1) KR100849241B1 (de)
CN (1) CN100511637C (de)
AT (1) ATE543209T1 (de)
FR (1) FR2851079B1 (de)
WO (1) WO2004075287A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2888402B1 (fr) * 2005-07-06 2007-12-21 Commissariat Energie Atomique Procede d'assemblage de substrats par depot d'une couche mince de collage d'oxyde ou de nitrure et structure ainsi assemblee
JP2007227415A (ja) * 2006-02-21 2007-09-06 Shin Etsu Chem Co Ltd 貼り合わせ基板の製造方法および貼り合わせ基板
FR2910702B1 (fr) * 2006-12-26 2009-04-03 Soitec Silicon On Insulator Procede de fabrication d'un substrat mixte
EP2128891B1 (de) 2007-02-28 2015-09-02 Shin-Etsu Chemical Co., Ltd. Prozess zum herstellen eines laminierten substrats
FR2926671B1 (fr) * 2008-01-17 2010-04-02 Soitec Silicon On Insulator Procede de traitement de defauts lors de collage de plaques
FR2967812B1 (fr) * 2010-11-19 2016-06-10 S O I Tec Silicon On Insulator Tech Dispositif electronique pour applications radiofrequence ou de puissance et procede de fabrication d'un tel dispositif
WO2017222873A1 (en) * 2016-06-24 2017-12-28 Quora Technology, Inc. Polycrystalline ceramic substrate and method of manufacture
CN111199962A (zh) * 2018-11-16 2020-05-26 东泰高科装备科技有限公司 太阳能电池及其制备方法
CN112039456B (zh) * 2019-07-19 2024-06-28 中芯集成电路（宁波）有限公司 体声波谐振器的封装方法及封装结构
CN110405649B (zh) * 2019-08-05 2020-08-04 衢州学院 一种添加具有耐水涂层可溶填料的溶胶凝胶抛光丸片及其制备方法
US20250183037A1 (en) * 2023-11-30 2025-06-05 Applied Materials, Inc. Methods for enabling chemical mechanical polishing and bonding of aluminum-containing materials

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58178519A (ja) * 1982-04-14 1983-10-19 Nec Corp 半導体ウエハ−の製造方法
US5276338A (en) * 1992-05-15 1994-01-04 International Business Machines Corporation Bonded wafer structure having a buried insulation layer
US5526768A (en) * 1994-02-03 1996-06-18 Harris Corporation Method for providing a silicon and diamond substrate having a carbon to silicon transition layer and apparatus thereof
IT1268123B1 (it) * 1994-10-13 1997-02-20 Sgs Thomson Microelectronics Fetta di materiale semiconduttore per la fabbricazione di dispositivi integrati e procedimento per la sua fabbricazione.
US5937312A (en) * 1995-03-23 1999-08-10 Sibond L.L.C. Single-etch stop process for the manufacture of silicon-on-insulator wafers
US6159824A (en) * 1997-05-12 2000-12-12 Silicon Genesis Corporation Silicon-on-silicon wafer bonding process using a thin film blister-separation method
FR2781082B1 (fr) * 1998-07-10 2002-09-20 Commissariat Energie Atomique Structure semiconductrice en couche mince comportant une couche de repartition de chaleur
US20020089016A1 (en) * 1998-07-10 2002-07-11 Jean-Pierre Joly Thin layer semi-conductor structure comprising a heat distribution layer
DE19936905A1 (de) * 1999-07-30 2001-03-08 Hoffmann Axel Verfahren zur Herstellung eines Kristalls
JP3591710B2 (ja) * 1999-12-08 2004-11-24 ソニー株式会社 窒化物系ｉｉｉ−ｖ族化合物層の成長方法およびそれを用いた基板の製造方法
AU2430401A (en) * 1999-12-13 2001-06-18 North Carolina State University Methods of fabricating gallium nitride layers on textured silicon substrates, and gallium nitride semiconductor structures fabricated thereby
JP3795771B2 (ja) * 2001-06-13 2006-07-12 日本碍子株式会社 Ｅｌｏ用ｉｉｉ族窒化物半導体基板

Also Published As

Publication number Publication date
FR2851079A1 (fr) 2004-08-13
EP1593152B1 (de) 2012-01-25
CN100511637C (zh) 2009-07-08
WO2004075287A1 (fr) 2004-09-02
KR100849241B1 (ko) 2008-07-29
JP2006517734A (ja) 2006-07-27
JP4874790B2 (ja) 2012-02-15
KR20050106006A (ko) 2005-11-08
CN1751387A (zh) 2006-03-22
EP1593152A1 (de) 2005-11-09
FR2851079B1 (fr) 2005-08-26

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