ATE544093T1 - Imprintmethode zur herstellung einer reliefschicht und deren nutzung als ätzmaske - Google Patents

Imprintmethode zur herstellung einer reliefschicht und deren nutzung als ätzmaske

Info

Publication number
ATE544093T1
ATE544093T1 AT07826880T AT07826880T ATE544093T1 AT E544093 T1 ATE544093 T1 AT E544093T1 AT 07826880 T AT07826880 T AT 07826880T AT 07826880 T AT07826880 T AT 07826880T AT E544093 T1 ATE544093 T1 AT E544093T1
Authority
AT
Austria
Prior art keywords
relief layer
producing
etching mask
imprint method
sandwiched
Prior art date
Application number
AT07826880T
Other languages
English (en)
Inventor
Marcus A Verschuuren
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE544093T1 publication Critical patent/ATE544093T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
    • B29C2059/023—Microembossing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Silicon Compounds (AREA)
  • Micromachines (AREA)
AT07826880T 2006-11-01 2007-10-26 Imprintmethode zur herstellung einer reliefschicht und deren nutzung als ätzmaske ATE544093T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP06123325 2006-11-01
PCT/IB2007/054361 WO2008053418A2 (en) 2006-11-01 2007-10-26 Relief layer and imprint method for making the same

Publications (1)

Publication Number Publication Date
ATE544093T1 true ATE544093T1 (de) 2012-02-15

Family

ID=39166818

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07826880T ATE544093T1 (de) 2006-11-01 2007-10-26 Imprintmethode zur herstellung einer reliefschicht und deren nutzung als ätzmaske

Country Status (7)

Country Link
US (3) US9298086B2 (de)
EP (1) EP2087403B1 (de)
JP (2) JP5936806B2 (de)
CN (3) CN105372934B (de)
AT (1) ATE544093T1 (de)
ES (1) ES2381621T3 (de)
WO (1) WO2008053418A2 (de)

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WO2008068701A2 (en) 2006-12-04 2008-06-12 Koninklijke Philips Electronics N.V. Method and apparatus for applying a sheet to a substrate
CN101583436B (zh) 2007-01-16 2014-05-07 皇家飞利浦电子股份有限公司 用于挠性板件和基板接触的方法和系统
US7791096B2 (en) * 2007-06-08 2010-09-07 Koninklijke Philips Electronics N.V. Mount for a semiconductor light emitting device
KR101610180B1 (ko) 2007-11-21 2016-04-07 캐논 나노테크놀로지즈 인코퍼레이티드 나노-임프린트 리소그래피용 다공성 주형 및 임프린팅 스택
WO2009141774A1 (en) 2008-05-20 2009-11-26 Koninklijke Philips Electronics N.V. Aqueous curable imprintable medium and patterned layer forming method
US8470188B2 (en) 2008-10-02 2013-06-25 Molecular Imprints, Inc. Nano-imprint lithography templates
ES2700870T3 (es) 2009-04-15 2019-02-19 Univ Cornell Nanopartículas de sílice fluorescentes mejoradas a través de densificación de sílice
NL2005263A (en) * 2009-09-29 2011-03-30 Asml Netherlands Bv Imprint lithography.
US8616873B2 (en) 2010-01-26 2013-12-31 Molecular Imprints, Inc. Micro-conformal templates for nanoimprint lithography
JP2013154637A (ja) * 2012-01-06 2013-08-15 Nippon Shokubai Co Ltd 樹脂製ナノ構造体の製造方法
DE102012112030A1 (de) * 2012-12-10 2014-06-12 Ev Group E. Thallner Gmbh Verfahren zum Mikrokontaktprägen
DK2904058T3 (en) 2012-12-21 2016-08-22 Koninklijke Philips Nv COMPOSITION, IMAGE INK AND METHOD OF PRINTING
CN105900211A (zh) * 2014-01-29 2016-08-24 株式会社大赛璐 纳米压印用光固化性组合物、以及使用了该组合物的微细图案的形成方法
CN105818556A (zh) * 2016-03-25 2016-08-03 南京京晶光电科技有限公司 一种采用纳米压印工艺在基材表面加工cd纹的方法
KR102331438B1 (ko) 2016-04-06 2021-11-26 코닌클리케 필립스 엔.브이. 임프린트 리소그래피 스탬프, 이의 제조 방법 및 사용 방법
US20190384167A1 (en) * 2017-01-27 2019-12-19 Arizona Board Of Regents On Behalf Of Arizona State University Electrochemical imprinting of micro- and nano-structures in porous silicon, silicon, and other semiconductors
CN107473177B (zh) * 2017-07-14 2020-07-14 华中科技大学 一种3d立体微纳结构的制作方法
EP3582004A1 (de) 2018-06-13 2019-12-18 Koninklijke Philips N.V. Prägezusammensetzung und verfahren zur herstellung einer gemusterten schicht unter verwendung derselben
CN112993106B (zh) * 2020-09-16 2022-07-22 重庆康佳光电技术研究院有限公司 蓝宝石基底图案化方法及蓝宝石基底
CN114988352A (zh) * 2022-04-29 2022-09-02 季华实验室 金刚石对顶砧集成器件的方法
CN115008669B (zh) * 2022-05-23 2024-08-02 江苏易塑复合新材料有限公司 一种瓦楞板模压成型设备及其模压工艺
CN115284696B (zh) * 2022-08-11 2023-07-25 业成科技（成都）有限公司 复合光学膜结构及其制造方法
EP4390539A1 (de) 2022-12-19 2024-06-26 Koninklijke Philips N.V. Ausrichtungsverfahren für imprintverfahren
EP4390540A1 (de) 2022-12-19 2024-06-26 Koninklijke Philips N.V. Ausrichtungsverfahren

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Also Published As

Publication number Publication date
WO2008053418A2 (en) 2008-05-08
US20200409257A1 (en) 2020-12-31
JP5916825B2 (ja) 2016-05-11
US11619878B2 (en) 2023-04-04
EP2087403A2 (de) 2009-08-12
US9298086B2 (en) 2016-03-29
US20160246169A1 (en) 2016-08-25
JP5936806B2 (ja) 2016-06-22
EP2087403B1 (de) 2012-02-01
CN101535892A (zh) 2009-09-16
JP2010508163A (ja) 2010-03-18
JP2015053487A (ja) 2015-03-19
WO2008053418A3 (en) 2008-11-13
US20100075108A1 (en) 2010-03-25
CN102967993A (zh) 2013-03-13
CN105372934B (zh) 2020-11-10
ES2381621T3 (es) 2012-05-30
CN105372934A (zh) 2016-03-02

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