ATE545721T1 - Verfahren zur herstellung von lumineszierenden nanokristallen - Google Patents

Verfahren zur herstellung von lumineszierenden nanokristallen

Info

Publication number
ATE545721T1
ATE545721T1 AT09742015T AT09742015T ATE545721T1 AT E545721 T1 ATE545721 T1 AT E545721T1 AT 09742015 T AT09742015 T AT 09742015T AT 09742015 T AT09742015 T AT 09742015T AT E545721 T1 ATE545721 T1 AT E545721T1
Authority
AT
Austria
Prior art keywords
precursor
oxidation state
nanocrystal
representing
shell
Prior art date
Application number
AT09742015T
Other languages
English (en)
Inventor
Peter Reiss
Liang Li
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE545721T1 publication Critical patent/ATE545721T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/56—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing sulfur
    • C09K11/562—Chalcogenides
    • C09K11/565—Chalcogenides with zinc cadmium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Luminescent Compositions (AREA)
AT09742015T 2008-05-05 2009-04-29 Verfahren zur herstellung von lumineszierenden nanokristallen ATE545721T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0852977A FR2930786B1 (fr) 2008-05-05 2008-05-05 Procede de preparation de nanocristaux luminescents, nanocristaux ainsi obtenus et leurs utilisations
PCT/EP2009/055231 WO2009135797A1 (fr) 2008-05-05 2009-04-29 Procédé de préparation de nanocristaux luminescents, nanocristaux ainsi obtenus et leurs utilisations

Publications (1)

Publication Number Publication Date
ATE545721T1 true ATE545721T1 (de) 2012-03-15

Family

ID=39944499

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09742015T ATE545721T1 (de) 2008-05-05 2009-04-29 Verfahren zur herstellung von lumineszierenden nanokristallen

Country Status (7)

Country Link
US (1) US8313969B2 (de)
EP (1) EP2297384B1 (de)
JP (1) JP2011520002A (de)
CN (1) CN102084041B (de)
AT (1) ATE545721T1 (de)
FR (1) FR2930786B1 (de)
WO (1) WO2009135797A1 (de)

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GB2454902B (en) * 2007-11-22 2012-12-05 Ct Fa R Angewandte Nanotechnologie Can Gmbh A method for the manufacture of III-V particles
CZ2009747A3 (cs) * 2009-11-11 2011-05-18 Ceské vysoké ucení technické v Praze Fakulta jaderná a fyzikálne inženýrská Zpusob prípravy nanocásticového scintilátoru na bázi oxidu zinecnatého s vysoce intenzivní luminiscencí
KR101664180B1 (ko) * 2010-03-22 2016-10-12 삼성디스플레이 주식회사 양자점 제조 방법
JP2012144587A (ja) * 2011-01-07 2012-08-02 Murata Mfg Co Ltd 化合物半導体粒子の製造方法
JP2012246470A (ja) * 2011-05-31 2012-12-13 Sharp Corp 半導体ナノ粒子の製造方法、半導体ナノ粒子、ならびにこれを用いた蛍光体
WO2012167398A1 (zh) * 2011-06-07 2012-12-13 拜尔技术工程（上海）有限公司 一种制备核壳纳米粒子及其溶液的方法
TWI595001B (zh) * 2011-09-16 2017-08-11 美國麻省理工學院 高發光性半導體奈米晶體
WO2013173409A1 (en) 2012-05-15 2013-11-21 Qd Vision, Inc. Semiconductor nanocrystals and methods of preparation
US9336919B2 (en) * 2012-08-17 2016-05-10 The Trustees Of The University Of Pennsylvania Methods for preparing colloidal nanocrystal-based thin films
US9260655B2 (en) * 2013-03-14 2016-02-16 Nanosys, Inc. Alkyl-acid ligands for nanocrystals
TWI608076B (zh) * 2015-03-04 2017-12-11 納諾柯技術有限公司 以金屬硫醇聚合物穩定化的量子點
WO2018056114A1 (ja) * 2016-09-23 2018-03-29 富士フイルム株式会社 半導体量子ドットの製造方法
WO2018108765A1 (en) * 2016-12-15 2018-06-21 Merck Patent Gmbh Method for preparing a nanosized light emitting semiconductor material
CN108358180B (zh) * 2017-12-08 2019-08-02 中国电子科技集团公司第十三研究所 利用承载气体进行磷化物原位注入合成的方法
KR102639508B1 (ko) * 2017-12-28 2024-02-23 소에이 가가쿠 고교 가부시키가이샤 반도체 나노입자 및 코어/쉘형 반도체 나노입자
FR3091274B1 (fr) * 2018-12-26 2023-04-28 Commisssariat A Lenergie Atomique Et Aux Energies Alternatives Nanocristaux de semi-conducteurs dopés, leur procédé de préparation et leurs utilisations
US11515445B2 (en) * 2019-02-26 2022-11-29 Opulence Optronics Co., Ltd Core-shell type quantum dots and method of forming the same

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CN1200902C (zh) * 2000-06-20 2005-05-11 株式会社东芝 透明涂膜基片、形成透明膜用的涂液及显示装置
JP4789809B2 (ja) * 2004-01-15 2011-10-12 サムスン エレクトロニクス カンパニー リミテッド ナノ結晶をドーピングしたマトリックス
US7645397B2 (en) * 2004-01-15 2010-01-12 Nanosys, Inc. Nanocrystal doped matrixes
US7588828B2 (en) * 2004-04-30 2009-09-15 Nanoco Technologies Limited Preparation of nanoparticle materials
US7399429B2 (en) * 2004-05-10 2008-07-15 Evident Technologies, Inc. III-V semiconductor nanocrystal complexes and methods of making same
US8003010B2 (en) * 2004-05-10 2011-08-23 Samsung Electronics Co., Ltd. Water-stable III-V semiconductor nanocrystal complexes and methods of making same
JP2006328234A (ja) * 2005-05-26 2006-12-07 Sharp Corp 蛍光体の製造方法
US7964278B2 (en) * 2005-06-15 2011-06-21 Yissum Research Development Company Of The Hebrew University Of Jerusalem III-V semiconductor core-heteroshell nanocrystals
US7850777B2 (en) * 2006-06-15 2010-12-14 Evident Technologies Method of preparing semiconductor nanocrystal compositions
JPWO2008029730A1 (ja) * 2006-09-08 2010-01-21 コニカミノルタエムジー株式会社 半導体蛍光微粒子、生体物質蛍光標識剤及びバイオアッセイ法
KR100853087B1 (ko) * 2007-04-26 2008-08-19 삼성전자주식회사 나노결정, 그의 제조방법 및 그를 포함하는 전자소자

Also Published As

Publication number Publication date
EP2297384A1 (de) 2011-03-23
WO2009135797A1 (fr) 2009-11-12
US8313969B2 (en) 2012-11-20
CN102084041A (zh) 2011-06-01
US20110097879A1 (en) 2011-04-28
FR2930786B1 (fr) 2010-12-31
CN102084041B (zh) 2013-08-14
FR2930786A1 (fr) 2009-11-06
JP2011520002A (ja) 2011-07-14
EP2297384B1 (de) 2012-02-15

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