ATE546565T1 - Verfahren und anlage zum aufbringen von filmen auf ein substrat - Google Patents

Verfahren und anlage zum aufbringen von filmen auf ein substrat

Info

Publication number
ATE546565T1
ATE546565T1 AT09797507T AT09797507T ATE546565T1 AT E546565 T1 ATE546565 T1 AT E546565T1 AT 09797507 T AT09797507 T AT 09797507T AT 09797507 T AT09797507 T AT 09797507T AT E546565 T1 ATE546565 T1 AT E546565T1
Authority
AT
Austria
Prior art keywords
voltage
substrate
electrodes
reaction chamber
inductor
Prior art date
Application number
AT09797507T
Other languages
English (en)
Inventor
Eric Tixhon
Joseph Leclercq
Eric Michel
Original Assignee
Agc Flat Glass Europ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agc Flat Glass Europ filed Critical Agc Flat Glass Europ
Application granted granted Critical
Publication of ATE546565T1 publication Critical patent/ATE546565T1/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52Controlling or regulating the coating process
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/001General methods for coating; Devices therefor
    • C03C17/002General methods for coating; Devices therefor for flat glass, e.g. float glass
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32348Dielectric barrier discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32403Treating multiple sides of workpieces, e.g. 3D workpieces
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32889Connection or combination with other apparatus
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/001General methods for coating; Devices therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemically Coating (AREA)
AT09797507T 2008-07-16 2009-07-16 Verfahren und anlage zum aufbringen von filmen auf ein substrat ATE546565T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP08160507A EP2145978A1 (de) 2008-07-16 2008-07-16 Verfahren und Anlage zum Auftragen von Schichten auf ein Substrat
PCT/EP2009/059155 WO2010007133A1 (en) 2008-07-16 2009-07-16 Process and installation for depositing films onto a substrate

Publications (1)

Publication Number Publication Date
ATE546565T1 true ATE546565T1 (de) 2012-03-15

Family

ID=40260735

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09797507T ATE546565T1 (de) 2008-07-16 2009-07-16 Verfahren und anlage zum aufbringen von filmen auf ein substrat

Country Status (10)

Country Link
US (2) US8753723B2 (de)
EP (2) EP2145978A1 (de)
JP (1) JP5372149B2 (de)
CN (1) CN102112657B (de)
AT (1) ATE546565T1 (de)
BR (1) BRPI0915768A2 (de)
EA (1) EA019460B1 (de)
PL (1) PL2310554T3 (de)
SI (1) SI2310554T1 (de)
WO (1) WO2010007133A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2145701A1 (de) * 2008-07-16 2010-01-20 AGC Flat Glass Europe SA Verfahren und Anlage für die Oberflächenvorbereitung durch dielektrische Barriere Entladung
EP2326151A1 (de) * 2009-11-24 2011-05-25 AGC Glass Europe Verfahren und Vorrichtung zur Polarisierung einer DBD-Elektrode
EP2756739B1 (de) 2011-09-15 2018-11-28 Cold Plasma Medical Technologies, Inc. Kaltplasmasterilisationsvorrichtungen und damit assoziierte verfahren
WO2013079798A1 (en) * 2011-12-01 2013-06-06 Beneq Oy Surface treatment apparatus and method
CH705973B1 (fr) * 2012-01-09 2016-09-15 L'université De Genève Procédé de traitement de surface d'un objet.
CN102969886A (zh) * 2012-11-25 2013-03-13 沈阳一特电工有限公司 等离子体制粉弧源
US10276352B2 (en) 2012-12-21 2019-04-30 AGC Inc. Pair of electrodes for DBD plasma process
PL2936539T3 (pl) 2012-12-21 2017-08-31 Asahi Glass Company, Limited Sposób zapłonu i urządzenie do parowania elektrod DBD
US20140188097A1 (en) * 2012-12-31 2014-07-03 Cold Plasma Medical Technologies, Inc. Method and Apparatus for Dielectric Barrier Discharge Wand Cold Plasma Device
EP3184666B1 (de) * 2015-12-23 2018-06-13 Singulus Technologies AG System und verfahren zur gasphasenabscheidung
KR101889826B1 (ko) * 2016-11-07 2018-08-21 이동주 입체 처리물에 균일한 미세 필라멘트 방전을 발생시키는 장치
WO2019108855A1 (en) * 2017-11-30 2019-06-06 Corning Incorporated Atmospheric pressure linear rf plasma source for surface modification and treatment
RU191710U1 (ru) * 2018-12-21 2019-08-19 АНО ВО "Белгородский университет кооперации, экономики и права" Устройство для иризации изделий из стекла
RU2721756C1 (ru) * 2019-06-11 2020-05-22 Федеральное государственное бюджетное образовательное учреждение высшего образования "Казанский национальный исследовательский технический университет им. А.Н. Туполева - КАИ" Способ получения охватывающего барьерного разряда и устройство для осуществления способа получения охватывающего барьерного разряда

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3780255A (en) * 1971-09-30 1973-12-18 Celanese Corp Apparatus for heat treatment of substrates
JP2811820B2 (ja) * 1989-10-30 1998-10-15 株式会社ブリヂストン シート状物の連続表面処理方法及び装置
FR2675139B1 (fr) * 1991-04-09 1993-11-26 Saint Gobain Vitrage Internal Depot de couches pyrolysees a performances ameliorees et vitrage revetu d'une telle couche.
US5392018A (en) * 1991-06-27 1995-02-21 Applied Materials, Inc. Electronically tuned matching networks using adjustable inductance elements and resonant tank circuits
US5776553A (en) * 1996-02-23 1998-07-07 Saint Gobain/Norton Industrial Ceramics Corp. Method for depositing diamond films by dielectric barrier discharge
AU742051B2 (en) * 1997-07-14 2001-12-13 University Of Tennessee Research Corporation, The Plasma treater systems and treatment methods
US5910886A (en) * 1997-11-07 1999-06-08 Sierra Applied Sciences, Inc. Phase-shift power supply
US6395128B2 (en) * 1998-02-19 2002-05-28 Micron Technology, Inc. RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition
CN2458622Y (zh) * 2000-11-15 2001-11-07 中国科学院金属研究所 一种脉冲微波强化高压低温等离子体化学反应装置
EP2233605B1 (de) * 2000-12-12 2012-09-26 Konica Corporation Optischer Überzug, enthaltend eine Antreflexionsschicht
JP2003073836A (ja) * 2001-08-28 2003-03-12 Canon Inc 真空処理方法及び真空処理装置
US20040175500A1 (en) * 2002-01-28 2004-09-09 Akira Fujisawa Method for forming transparent conductive film, transparent conductive film, glass substrate having the same and photoelectric transduction unit including the glass substrate
JP4710216B2 (ja) * 2002-06-11 2011-06-29 コニカミノルタホールディングス株式会社 薄膜形成方法
US6774569B2 (en) * 2002-07-11 2004-08-10 Fuji Photo Film B.V. Apparatus for producing and sustaining a glow discharge plasma under atmospheric conditions
GB0217553D0 (en) 2002-07-30 2002-09-11 Sheel David W Titania coatings by CVD at atmospheric pressure
DE10252146B4 (de) * 2002-11-09 2012-03-29 Hüttinger Elektronik Gmbh + Co. Kg Verfahren zum Erzeugen einer hochfrequenten Wechselspannung sowie Hochfrequenz-Leistungsverstärker dafür
JP4558365B2 (ja) * 2004-03-26 2010-10-06 株式会社神戸製鋼所 プラズマ処理装置及びプラズマ処理方法
US7312584B2 (en) * 2004-03-29 2007-12-25 Mitsubishi Electric Corporation Plasma-generation power-supply device
GB0410749D0 (en) * 2004-05-14 2004-06-16 Dow Corning Ireland Ltd Coating apparatus
RU2006145309A (ru) 2004-05-20 2008-06-27 Дау Глобал Текнолоджиз, Инк. (Us) Химическое осаждение пара оксида металла, усиленное плазмой
JP2006032303A (ja) * 2004-07-22 2006-02-02 Sharp Corp 高周波プラズマ処理装置および処理方法
JP4747665B2 (ja) * 2005-05-11 2011-08-17 大日本印刷株式会社 成膜装置及び成膜方法
JP2009525381A (ja) * 2006-02-02 2009-07-09 フジフィルム マニュファクチャリング ユーロプ ビー.ブイ. プラズマによる表面処理方法及び表面処理装置
US7655110B2 (en) * 2006-03-29 2010-02-02 Tokyo Electron Limited Plasma processing apparatus
US7611603B2 (en) * 2006-03-31 2009-11-03 Tokyo Electron Limited Plasma processing apparatus having impedance varying electrodes
JP5254533B2 (ja) * 2006-03-31 2013-08-07 東京エレクトロン株式会社 プラズマ処理装置と方法
EP2145701A1 (de) 2008-07-16 2010-01-20 AGC Flat Glass Europe SA Verfahren und Anlage für die Oberflächenvorbereitung durch dielektrische Barriere Entladung
EP2145979A1 (de) 2008-07-16 2010-01-20 AGC Flat Glass Europe SA Verfahren und Anlage zum gleichzeitigen Auftragen von Schichten auf beide Seiten eines Substrats

Also Published As

Publication number Publication date
JP2011528066A (ja) 2011-11-10
EA019460B1 (ru) 2014-03-31
EP2310554B8 (de) 2012-04-11
US8753723B2 (en) 2014-06-17
JP5372149B2 (ja) 2013-12-18
US20110183083A1 (en) 2011-07-28
WO2010007133A1 (en) 2010-01-21
CN102112657B (zh) 2014-09-03
CN102112657A (zh) 2011-06-29
EP2145978A1 (de) 2010-01-20
EP2310554A1 (de) 2011-04-20
US20140230731A1 (en) 2014-08-21
EP2310554B1 (de) 2012-02-22
SI2310554T1 (sl) 2012-06-29
BRPI0915768A2 (pt) 2015-11-03
EA201100221A1 (ru) 2011-08-30
US10023961B2 (en) 2018-07-17
PL2310554T3 (pl) 2012-07-31

Similar Documents

Publication Publication Date Title
ATE546565T1 (de) Verfahren und anlage zum aufbringen von filmen auf ein substrat
Takaki et al. Influence of electrode configuration on ozone synthesis and microdischarge property in dielectric barrier discharge reactor
CN101584020B (zh) 通过从等离子体沉积而形成膜的方法
GB2427407A (en) Coating of a polymer layer using low power pulsed plasma in a plasma chamber of a large volume
ATE547544T1 (de) Verfahren und anlage zur gleichzeitigen ablagerung von filmen auf beiden seiten eines substrats
EP3788181B1 (de) Verfahren zur erzeugung eines plasmas mit niederer temperatur, verfahren zur beschichtung eines elektrisch leitenden oder ferromagnetischen rohres unter verwendung eines pulsierten plasmas und entsprechende vorrichtungen
US20070298189A1 (en) Plasma process for surface treatment of workpieces
RU2009137553A (ru) Способ нанесения высокопрочного покрытия на изделия и/или производственные материалы
WO1999014390A2 (de) Verfahren zur sputterbeschichtung von oberflächen
TW200730662A (en) System and method for modulation of power and power related functions of PECVD discharge sources to achieve new film properties
Jiang et al. Double glow surface alloying of low carbon steel with electric brush plating Ni interlayer for improvement in corrosion resistance
Kim et al. Effects of applied power on hydrogenated amorphous carbon (aC: H) film deposition by low frequency (60 Hz) plasma-enhanced chemical vapor deposition (PECVD)
TW200502426A (en) Deposition apparatus and method
KR20190122536A (ko) 반응성 스패터 장치 및 이를 이용한 복합 금속 화합물 또는 혼합막의 성막 방법
WO2011076430A3 (de) Verfahren und vorrichtung zum ausbilden einer dielektrischen schicht auf einem substrat
US8883246B2 (en) Plasma activated chemical vapour deposition method and apparatus therefor
WO2004028220A1 (en) Method and apparatus for generating and maintaining a plasma
JPH0387373A (ja) プラズマcvd薄膜の形成法
JP5280784B2 (ja) 成膜装置
Ruan et al. Characteristics of pulsed streamer discharge with MgO cathode and enhanced toluene degradation
Kawamura et al. Development of large-area a-Si: H films deposition using controlled VHF plasma
RU2009130532A (ru) Способ формирования сверхтвердого аморфного углеродного покрытия в вакууме
Takaki et al. Characteristics of amorphous carbon films prepared by hybrid RF (195 kHz) plasma triggered by shunting arc discharge
Yukimura et al. Ar/O2 gas pressure dependence of atomic concentration of zirconia prepared by zirconium pulse arc PBII&D
Wang et al. Mechanism of Cathodic Plasma Electrolytic Deposition on Ti6Al4V Alloy in Al (NO3) 3 Ethanol-Aqueous Solution