ATE546565T1 - Verfahren und anlage zum aufbringen von filmen auf ein substrat - Google Patents
Verfahren und anlage zum aufbringen von filmen auf ein substratInfo
- Publication number
- ATE546565T1 ATE546565T1 AT09797507T AT09797507T ATE546565T1 AT E546565 T1 ATE546565 T1 AT E546565T1 AT 09797507 T AT09797507 T AT 09797507T AT 09797507 T AT09797507 T AT 09797507T AT E546565 T1 ATE546565 T1 AT E546565T1
- Authority
- AT
- Austria
- Prior art keywords
- voltage
- substrate
- electrodes
- reaction chamber
- inductor
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 8
- 238000000034 method Methods 0.000 title abstract 5
- 239000000203 mixture Substances 0.000 abstract 6
- 230000004888 barrier function Effects 0.000 abstract 3
- 238000009434 installation Methods 0.000 abstract 3
- 238000005096 rolling process Methods 0.000 abstract 2
- 239000003153 chemical reaction reagent Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/001—General methods for coating; Devices therefor
- C03C17/002—General methods for coating; Devices therefor for flat glass, e.g. float glass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32348—Dielectric barrier discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32403—Treating multiple sides of workpieces, e.g. 3D workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32889—Connection or combination with other apparatus
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/001—General methods for coating; Devices therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemically Coating (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP08160507A EP2145978A1 (de) | 2008-07-16 | 2008-07-16 | Verfahren und Anlage zum Auftragen von Schichten auf ein Substrat |
| PCT/EP2009/059155 WO2010007133A1 (en) | 2008-07-16 | 2009-07-16 | Process and installation for depositing films onto a substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE546565T1 true ATE546565T1 (de) | 2012-03-15 |
Family
ID=40260735
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT09797507T ATE546565T1 (de) | 2008-07-16 | 2009-07-16 | Verfahren und anlage zum aufbringen von filmen auf ein substrat |
Country Status (10)
| Country | Link |
|---|---|
| US (2) | US8753723B2 (de) |
| EP (2) | EP2145978A1 (de) |
| JP (1) | JP5372149B2 (de) |
| CN (1) | CN102112657B (de) |
| AT (1) | ATE546565T1 (de) |
| BR (1) | BRPI0915768A2 (de) |
| EA (1) | EA019460B1 (de) |
| PL (1) | PL2310554T3 (de) |
| SI (1) | SI2310554T1 (de) |
| WO (1) | WO2010007133A1 (de) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2145701A1 (de) * | 2008-07-16 | 2010-01-20 | AGC Flat Glass Europe SA | Verfahren und Anlage für die Oberflächenvorbereitung durch dielektrische Barriere Entladung |
| EP2326151A1 (de) * | 2009-11-24 | 2011-05-25 | AGC Glass Europe | Verfahren und Vorrichtung zur Polarisierung einer DBD-Elektrode |
| EP2756739B1 (de) | 2011-09-15 | 2018-11-28 | Cold Plasma Medical Technologies, Inc. | Kaltplasmasterilisationsvorrichtungen und damit assoziierte verfahren |
| WO2013079798A1 (en) * | 2011-12-01 | 2013-06-06 | Beneq Oy | Surface treatment apparatus and method |
| CH705973B1 (fr) * | 2012-01-09 | 2016-09-15 | L'université De Genève | Procédé de traitement de surface d'un objet. |
| CN102969886A (zh) * | 2012-11-25 | 2013-03-13 | 沈阳一特电工有限公司 | 等离子体制粉弧源 |
| US10276352B2 (en) | 2012-12-21 | 2019-04-30 | AGC Inc. | Pair of electrodes for DBD plasma process |
| PL2936539T3 (pl) | 2012-12-21 | 2017-08-31 | Asahi Glass Company, Limited | Sposób zapłonu i urządzenie do parowania elektrod DBD |
| US20140188097A1 (en) * | 2012-12-31 | 2014-07-03 | Cold Plasma Medical Technologies, Inc. | Method and Apparatus for Dielectric Barrier Discharge Wand Cold Plasma Device |
| EP3184666B1 (de) * | 2015-12-23 | 2018-06-13 | Singulus Technologies AG | System und verfahren zur gasphasenabscheidung |
| KR101889826B1 (ko) * | 2016-11-07 | 2018-08-21 | 이동주 | 입체 처리물에 균일한 미세 필라멘트 방전을 발생시키는 장치 |
| WO2019108855A1 (en) * | 2017-11-30 | 2019-06-06 | Corning Incorporated | Atmospheric pressure linear rf plasma source for surface modification and treatment |
| RU191710U1 (ru) * | 2018-12-21 | 2019-08-19 | АНО ВО "Белгородский университет кооперации, экономики и права" | Устройство для иризации изделий из стекла |
| RU2721756C1 (ru) * | 2019-06-11 | 2020-05-22 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Казанский национальный исследовательский технический университет им. А.Н. Туполева - КАИ" | Способ получения охватывающего барьерного разряда и устройство для осуществления способа получения охватывающего барьерного разряда |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3780255A (en) * | 1971-09-30 | 1973-12-18 | Celanese Corp | Apparatus for heat treatment of substrates |
| JP2811820B2 (ja) * | 1989-10-30 | 1998-10-15 | 株式会社ブリヂストン | シート状物の連続表面処理方法及び装置 |
| FR2675139B1 (fr) * | 1991-04-09 | 1993-11-26 | Saint Gobain Vitrage Internal | Depot de couches pyrolysees a performances ameliorees et vitrage revetu d'une telle couche. |
| US5392018A (en) * | 1991-06-27 | 1995-02-21 | Applied Materials, Inc. | Electronically tuned matching networks using adjustable inductance elements and resonant tank circuits |
| US5776553A (en) * | 1996-02-23 | 1998-07-07 | Saint Gobain/Norton Industrial Ceramics Corp. | Method for depositing diamond films by dielectric barrier discharge |
| AU742051B2 (en) * | 1997-07-14 | 2001-12-13 | University Of Tennessee Research Corporation, The | Plasma treater systems and treatment methods |
| US5910886A (en) * | 1997-11-07 | 1999-06-08 | Sierra Applied Sciences, Inc. | Phase-shift power supply |
| US6395128B2 (en) * | 1998-02-19 | 2002-05-28 | Micron Technology, Inc. | RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition |
| CN2458622Y (zh) * | 2000-11-15 | 2001-11-07 | 中国科学院金属研究所 | 一种脉冲微波强化高压低温等离子体化学反应装置 |
| EP2233605B1 (de) * | 2000-12-12 | 2012-09-26 | Konica Corporation | Optischer Überzug, enthaltend eine Antreflexionsschicht |
| JP2003073836A (ja) * | 2001-08-28 | 2003-03-12 | Canon Inc | 真空処理方法及び真空処理装置 |
| US20040175500A1 (en) * | 2002-01-28 | 2004-09-09 | Akira Fujisawa | Method for forming transparent conductive film, transparent conductive film, glass substrate having the same and photoelectric transduction unit including the glass substrate |
| JP4710216B2 (ja) * | 2002-06-11 | 2011-06-29 | コニカミノルタホールディングス株式会社 | 薄膜形成方法 |
| US6774569B2 (en) * | 2002-07-11 | 2004-08-10 | Fuji Photo Film B.V. | Apparatus for producing and sustaining a glow discharge plasma under atmospheric conditions |
| GB0217553D0 (en) | 2002-07-30 | 2002-09-11 | Sheel David W | Titania coatings by CVD at atmospheric pressure |
| DE10252146B4 (de) * | 2002-11-09 | 2012-03-29 | Hüttinger Elektronik Gmbh + Co. Kg | Verfahren zum Erzeugen einer hochfrequenten Wechselspannung sowie Hochfrequenz-Leistungsverstärker dafür |
| JP4558365B2 (ja) * | 2004-03-26 | 2010-10-06 | 株式会社神戸製鋼所 | プラズマ処理装置及びプラズマ処理方法 |
| US7312584B2 (en) * | 2004-03-29 | 2007-12-25 | Mitsubishi Electric Corporation | Plasma-generation power-supply device |
| GB0410749D0 (en) * | 2004-05-14 | 2004-06-16 | Dow Corning Ireland Ltd | Coating apparatus |
| RU2006145309A (ru) | 2004-05-20 | 2008-06-27 | Дау Глобал Текнолоджиз, Инк. (Us) | Химическое осаждение пара оксида металла, усиленное плазмой |
| JP2006032303A (ja) * | 2004-07-22 | 2006-02-02 | Sharp Corp | 高周波プラズマ処理装置および処理方法 |
| JP4747665B2 (ja) * | 2005-05-11 | 2011-08-17 | 大日本印刷株式会社 | 成膜装置及び成膜方法 |
| JP2009525381A (ja) * | 2006-02-02 | 2009-07-09 | フジフィルム マニュファクチャリング ユーロプ ビー.ブイ. | プラズマによる表面処理方法及び表面処理装置 |
| US7655110B2 (en) * | 2006-03-29 | 2010-02-02 | Tokyo Electron Limited | Plasma processing apparatus |
| US7611603B2 (en) * | 2006-03-31 | 2009-11-03 | Tokyo Electron Limited | Plasma processing apparatus having impedance varying electrodes |
| JP5254533B2 (ja) * | 2006-03-31 | 2013-08-07 | 東京エレクトロン株式会社 | プラズマ処理装置と方法 |
| EP2145701A1 (de) | 2008-07-16 | 2010-01-20 | AGC Flat Glass Europe SA | Verfahren und Anlage für die Oberflächenvorbereitung durch dielektrische Barriere Entladung |
| EP2145979A1 (de) | 2008-07-16 | 2010-01-20 | AGC Flat Glass Europe SA | Verfahren und Anlage zum gleichzeitigen Auftragen von Schichten auf beide Seiten eines Substrats |
-
2008
- 2008-07-16 EP EP08160507A patent/EP2145978A1/de not_active Ceased
-
2009
- 2009-07-16 BR BRPI0915768A patent/BRPI0915768A2/pt not_active Application Discontinuation
- 2009-07-16 EA EA201100221A patent/EA019460B1/ru not_active IP Right Cessation
- 2009-07-16 WO PCT/EP2009/059155 patent/WO2010007133A1/en not_active Ceased
- 2009-07-16 PL PL09797507T patent/PL2310554T3/pl unknown
- 2009-07-16 AT AT09797507T patent/ATE546565T1/de active
- 2009-07-16 CN CN200980126370.7A patent/CN102112657B/zh not_active Expired - Fee Related
- 2009-07-16 US US13/054,284 patent/US8753723B2/en active Active
- 2009-07-16 SI SI200930247T patent/SI2310554T1/sl unknown
- 2009-07-16 JP JP2011517932A patent/JP5372149B2/ja not_active Expired - Fee Related
- 2009-07-16 EP EP09797507A patent/EP2310554B8/de not_active Not-in-force
-
2014
- 2014-04-29 US US14/264,094 patent/US10023961B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011528066A (ja) | 2011-11-10 |
| EA019460B1 (ru) | 2014-03-31 |
| EP2310554B8 (de) | 2012-04-11 |
| US8753723B2 (en) | 2014-06-17 |
| JP5372149B2 (ja) | 2013-12-18 |
| US20110183083A1 (en) | 2011-07-28 |
| WO2010007133A1 (en) | 2010-01-21 |
| CN102112657B (zh) | 2014-09-03 |
| CN102112657A (zh) | 2011-06-29 |
| EP2145978A1 (de) | 2010-01-20 |
| EP2310554A1 (de) | 2011-04-20 |
| US20140230731A1 (en) | 2014-08-21 |
| EP2310554B1 (de) | 2012-02-22 |
| SI2310554T1 (sl) | 2012-06-29 |
| BRPI0915768A2 (pt) | 2015-11-03 |
| EA201100221A1 (ru) | 2011-08-30 |
| US10023961B2 (en) | 2018-07-17 |
| PL2310554T3 (pl) | 2012-07-31 |
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