ATE547544T1 - Verfahren und anlage zur gleichzeitigen ablagerung von filmen auf beiden seiten eines substrats - Google Patents

Verfahren und anlage zur gleichzeitigen ablagerung von filmen auf beiden seiten eines substrats

Info

Publication number
ATE547544T1
ATE547544T1 AT09797508T AT09797508T ATE547544T1 AT E547544 T1 ATE547544 T1 AT E547544T1 AT 09797508 T AT09797508 T AT 09797508T AT 09797508 T AT09797508 T AT 09797508T AT E547544 T1 ATE547544 T1 AT E547544T1
Authority
AT
Austria
Prior art keywords
voltage
substrate
electrodes
reaction chamber
inductor
Prior art date
Application number
AT09797508T
Other languages
English (en)
Inventor
Eric Tixhon
Joseph Leclercq
Eric Michel
Original Assignee
Agc Glass Europe
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agc Glass Europe filed Critical Agc Glass Europe
Application granted granted Critical
Publication of ATE547544T1 publication Critical patent/ATE547544T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/001—General methods for coating; Devices therefor
    • C03C17/002—General methods for coating; Devices therefor for flat glass, e.g. float glass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/365—Coating different sides of a glass substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Surface Treatment Of Glass (AREA)
  • Laminated Bodies (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
AT09797508T 2008-07-16 2009-07-16 Verfahren und anlage zur gleichzeitigen ablagerung von filmen auf beiden seiten eines substrats ATE547544T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP08160508A EP2145979A1 (de) 2008-07-16 2008-07-16 Verfahren und Anlage zum gleichzeitigen Auftragen von Schichten auf beide Seiten eines Substrats
PCT/EP2009/059157 WO2010007134A1 (en) 2008-07-16 2009-07-16 Process and installation for despositing films simultaneously onto both sides of a substrate.

Publications (1)

Publication Number Publication Date
ATE547544T1 true ATE547544T1 (de) 2012-03-15

Family

ID=40243978

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09797508T ATE547544T1 (de) 2008-07-16 2009-07-16 Verfahren und anlage zur gleichzeitigen ablagerung von filmen auf beiden seiten eines substrats

Country Status (10)

Country Link
US (1) US9005718B2 (de)
EP (2) EP2145979A1 (de)
JP (1) JP5274659B2 (de)
CN (1) CN102084030B (de)
AT (1) ATE547544T1 (de)
BR (1) BRPI0915771A2 (de)
EA (1) EA019070B1 (de)
PL (1) PL2300633T3 (de)
SI (1) SI2300633T1 (de)
WO (1) WO2010007134A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2145701A1 (de) * 2008-07-16 2010-01-20 AGC Flat Glass Europe SA Verfahren und Anlage für die Oberflächenvorbereitung durch dielektrische Barriere Entladung
EP2145978A1 (de) 2008-07-16 2010-01-20 AGC Flat Glass Europe SA Verfahren und Anlage zum Auftragen von Schichten auf ein Substrat
EA027687B1 (ru) * 2012-12-21 2017-08-31 Асахи Гласс Компани Лимитед Способ и устройство зажигания для пар электродов диэлектрического барьерного разряда (дбр)
CN108349788A (zh) 2015-08-21 2018-07-31 康宁股份有限公司 加工玻璃的方法和设备
US11426091B2 (en) * 2017-09-06 2022-08-30 Apple Inc. Film coatings as electrically conductive pathways
CN110129771B (zh) * 2019-04-16 2021-04-20 中国科学院电工研究所 一种薄膜沉积镀膜系统及对薄膜进行沉积镀膜的方法

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US4790921A (en) * 1984-10-12 1988-12-13 Hewlett-Packard Company Planetary substrate carrier method and apparatus
JPS61204374A (ja) * 1985-03-08 1986-09-10 Hitachi Maxell Ltd 蒸着方法ならびに蒸着装置
US5234561A (en) * 1988-08-25 1993-08-10 Hauzer Industries Bv Physical vapor deposition dual coating process
DE59202577D1 (de) * 1991-03-05 1995-07-27 Balzers Hochvakuum Verfahren zur Herstellung einer doppelseitigen Beschichtung von optischen Werkstücken.
FR2675139B1 (fr) * 1991-04-09 1993-11-26 Saint Gobain Vitrage Internal Depot de couches pyrolysees a performances ameliorees et vitrage revetu d'une telle couche.
US5776553A (en) * 1996-02-23 1998-07-07 Saint Gobain/Norton Industrial Ceramics Corp. Method for depositing diamond films by dielectric barrier discharge
US5789040A (en) * 1997-05-21 1998-08-04 Optical Coating Laboratory, Inc. Methods and apparatus for simultaneous multi-sided coating of optical thin film designs using dual-frequency plasma-enhanced chemical vapor deposition
US6395128B2 (en) * 1998-02-19 2002-05-28 Micron Technology, Inc. RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition
US6456483B1 (en) * 1999-04-14 2002-09-24 Becromal S.P.A. Electrodes for electrolytic capacitors and production process thereof
TW200510790A (en) * 1999-04-15 2005-03-16 Konishiroku Photo Ind Manufacturing method of protective film for polarizing plate
US7760023B2 (en) * 2000-09-12 2010-07-20 Black Sand Technologies, Inc. Method and apparatus for stabilizing RF power amplifiers
JP2003073836A (ja) * 2001-08-28 2003-03-12 Canon Inc 真空処理方法及び真空処理装置
GB0217553D0 (en) 2002-07-30 2002-09-11 Sheel David W Titania coatings by CVD at atmospheric pressure
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JP4558365B2 (ja) * 2004-03-26 2010-10-06 株式会社神戸製鋼所 プラズマ処理装置及びプラズマ処理方法
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BRPI0510823A (pt) 2004-05-20 2007-12-26 Dow Global Technologies método para depositar um revestimento de óxido metálico e artigo
JP2006032303A (ja) * 2004-07-22 2006-02-02 Sharp Corp 高周波プラズマ処理装置および処理方法
JP4747665B2 (ja) * 2005-05-11 2011-08-17 大日本印刷株式会社 成膜装置及び成膜方法
WO2007089146A1 (en) * 2006-02-02 2007-08-09 Fujifilm Manufacturing Europe B.V. Method for surface treatment by plasma and surface treatment apparatus
JP5254533B2 (ja) * 2006-03-31 2013-08-07 東京エレクトロン株式会社 プラズマ処理装置と方法
US20080246101A1 (en) * 2007-04-05 2008-10-09 Applied Materials Inc. Method of poly-silicon grain structure formation
EP2145701A1 (de) * 2008-07-16 2010-01-20 AGC Flat Glass Europe SA Verfahren und Anlage für die Oberflächenvorbereitung durch dielektrische Barriere Entladung
US7902047B2 (en) * 2008-07-18 2011-03-08 The United States Of America As Represented By The United States Department Of Energy Dual chamber system providing simultaneous etch and deposition on opposing substrate sides for growing low defect density epitaxial layers

Also Published As

Publication number Publication date
EA019070B1 (ru) 2013-12-30
EP2145979A1 (de) 2010-01-20
EA201100219A1 (ru) 2011-08-30
US9005718B2 (en) 2015-04-14
BRPI0915771A2 (pt) 2015-11-03
JP5274659B2 (ja) 2013-08-28
US20110200763A1 (en) 2011-08-18
EP2300633B1 (de) 2012-02-29
CN102084030B (zh) 2013-07-24
JP2011528067A (ja) 2011-11-10
PL2300633T3 (pl) 2012-07-31
SI2300633T1 (sl) 2012-06-29
EP2300633A1 (de) 2011-03-30
WO2010007134A1 (en) 2010-01-21
CN102084030A (zh) 2011-06-01

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