ATE546569T1 - Verfahren zur herstellung von sic-kristall - Google Patents

Verfahren zur herstellung von sic-kristall

Info

Publication number
ATE546569T1
ATE546569T1 AT03710440T AT03710440T ATE546569T1 AT E546569 T1 ATE546569 T1 AT E546569T1 AT 03710440 T AT03710440 T AT 03710440T AT 03710440 T AT03710440 T AT 03710440T AT E546569 T1 ATE546569 T1 AT E546569T1
Authority
AT
Austria
Prior art keywords
sic
crystal
substrate
single crystal
sic single
Prior art date
Application number
AT03710440T
Other languages
English (en)
Inventor
Isaho Kamata
Hidekazu Tsuchida
Original Assignee
Central Res Inst Elect
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Central Res Inst Elect filed Critical Central Res Inst Elect
Application granted granted Critical
Publication of ATE546569T1 publication Critical patent/ATE546569T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Ceramic Products (AREA)
AT03710440T 2002-03-19 2003-03-19 Verfahren zur herstellung von sic-kristall ATE546569T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002075956 2002-03-19
JP2002235865 2002-08-13
PCT/JP2003/003363 WO2003078702A1 (en) 2002-03-19 2003-03-19 METHOD FOR PREPARING SiC CRYSTAL AND SiC CRYSTAL

Publications (1)

Publication Number Publication Date
ATE546569T1 true ATE546569T1 (de) 2012-03-15

Family

ID=28043768

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03710440T ATE546569T1 (de) 2002-03-19 2003-03-19 Verfahren zur herstellung von sic-kristall

Country Status (9)

Country Link
US (1) US7081420B2 (de)
EP (1) EP1491662B1 (de)
JP (1) JP4044053B2 (de)
KR (1) KR100984261B1 (de)
CN (1) CN1324168C (de)
AT (1) ATE546569T1 (de)
AU (1) AU2003221438A1 (de)
TW (1) TW200307064A (de)
WO (1) WO2003078702A1 (de)

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JP5417760B2 (ja) * 2008-08-01 2014-02-19 富士電機株式会社 炭化珪素半導体装置の製造方法および炭化珪素半導体装置
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JP2010095397A (ja) * 2008-10-15 2010-04-30 Nippon Steel Corp 炭化珪素単結晶及び炭化珪素単結晶ウェハ
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SE536605C2 (sv) * 2012-01-30 2014-03-25 Odling av kiselkarbidkristall i en CVD-reaktor vid användning av klorineringskemi
KR101926694B1 (ko) * 2012-05-30 2018-12-07 엘지이노텍 주식회사 탄화규소 에피 웨이퍼 및 이의 제조 방법
KR101926678B1 (ko) * 2012-05-31 2018-12-11 엘지이노텍 주식회사 탄화규소 에피 웨이퍼 및 이의 제조 방법
KR101976600B1 (ko) * 2012-06-28 2019-05-09 엘지이노텍 주식회사 탄화규소 에피 웨이퍼 및 이의 제조 방법
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KR102131245B1 (ko) * 2013-06-28 2020-08-05 엘지이노텍 주식회사 에피택셜 웨이퍼
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
JP5857986B2 (ja) * 2013-02-20 2016-02-10 株式会社デンソー 炭化珪素単結晶および炭化珪素単結晶の製造方法
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JP6123408B2 (ja) * 2013-03-26 2017-05-10 三菱電機株式会社 単結晶４Ｈ−ＳｉＣ基板及びその製造方法
KR102165614B1 (ko) * 2013-06-28 2020-10-14 엘지이노텍 주식회사 에피택셜 웨이퍼
JP2015143168A (ja) * 2014-01-31 2015-08-06 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素エピタキシャル基板の製造方法
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
KR102203025B1 (ko) * 2014-08-06 2021-01-14 엘지이노텍 주식회사 탄화규소 에피 웨이퍼 제조 방법
JP2016127201A (ja) * 2015-01-07 2016-07-11 三菱電機株式会社 炭化珪素エピタキシャル基板の製造方法および炭化珪素半導体装置の製造方法
JP6542347B2 (ja) 2015-02-18 2019-07-10 昭和電工株式会社 エピタキシャル炭化珪素単結晶ウエハの製造方法及びエピタキシャル炭化珪素単結晶ウエハ
WO2017061154A1 (ja) * 2015-10-07 2017-04-13 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP6579710B2 (ja) * 2015-12-24 2019-09-25 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法
US10407769B2 (en) * 2016-03-18 2019-09-10 Goodrich Corporation Method and apparatus for decreasing the radial temperature gradient in CVI/CVD furnaces
JP2017122047A (ja) * 2017-03-29 2017-07-13 三菱電機株式会社 単結晶４Ｈ−ＳｉＣ基板及びその製造方法
CN110476223B (zh) * 2017-04-04 2023-05-30 三菱电机株式会社 碳化硅外延晶片的制造方法及碳化硅半导体装置的制造方法
CN107275209B (zh) * 2017-06-17 2019-08-23 东莞市天域半导体科技有限公司 一种SiC超高压PiN二极管器件材料的制备方法
CN108411368B (zh) * 2018-06-11 2020-12-08 山东大学 一种快速有选择性的降低SiC晶体中微管和位错密度的方法
JP7217608B2 (ja) * 2018-10-16 2023-02-03 昭和電工株式会社 ＳｉＣ基板、ＳｉＣエピタキシャルウェハ及びその製造方法
EP4012077A4 (de) * 2019-08-06 2023-09-20 Kwansei Gakuin Educational Foundation Verfahren zur herstellung von sic-substrat
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Also Published As

Publication number Publication date
EP1491662B1 (de) 2012-02-22
EP1491662A4 (de) 2008-04-16
US7081420B2 (en) 2006-07-25
JPWO2003078702A1 (ja) 2005-07-14
WO2003078702A1 (en) 2003-09-25
TW200307064A (en) 2003-12-01
JP4044053B2 (ja) 2008-02-06
TWI313309B (de) 2009-08-11
US20050181627A1 (en) 2005-08-18
CN1643188A (zh) 2005-07-20
KR100984261B1 (ko) 2010-09-30
KR20040097175A (ko) 2004-11-17
EP1491662A1 (de) 2004-12-29
AU2003221438A1 (en) 2003-09-29
CN1324168C (zh) 2007-07-04

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