ATE546782T1 - Speichersystem - Google Patents

Speichersystem

Info

Publication number
ATE546782T1
ATE546782T1 AT07832620T AT07832620T ATE546782T1 AT E546782 T1 ATE546782 T1 AT E546782T1 AT 07832620 T AT07832620 T AT 07832620T AT 07832620 T AT07832620 T AT 07832620T AT E546782 T1 ATE546782 T1 AT E546782T1
Authority
AT
Austria
Prior art keywords
erase operations
memory
maximum number
self
computer
Prior art date
Application number
AT07832620T
Other languages
English (en)
Inventor
Yasushi Nagadomi
Daisaburo Takashima
Kosuke Hatsuda
Shinichi Kanno
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Application granted granted Critical
Publication of ATE546782T1 publication Critical patent/ATE546782T1/de

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/16—Protection against loss of memory contents
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/008—Reliability or availability analysis
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Debugging And Monitoring (AREA)
  • Memory System (AREA)
  • Iron Core Of Rotating Electric Machines (AREA)
  • Soundproofing, Sound Blocking, And Sound Damping (AREA)
  • Vehicle Body Suspensions (AREA)
AT07832620T 2006-11-30 2007-11-28 Speichersystem ATE546782T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006322868A JP4575346B2 (ja) 2006-11-30 2006-11-30 メモリシステム
PCT/JP2007/072898 WO2008066058A1 (en) 2006-11-30 2007-11-28 Memory system

Publications (1)

Publication Number Publication Date
ATE546782T1 true ATE546782T1 (de) 2012-03-15

Family

ID=39467848

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07832620T ATE546782T1 (de) 2006-11-30 2007-11-28 Speichersystem

Country Status (8)

Country Link
US (3) US8156393B2 (de)
EP (1) EP2088512B1 (de)
JP (1) JP4575346B2 (de)
KR (1) KR101079502B1 (de)
CN (2) CN104699546A (de)
AT (1) ATE546782T1 (de)
TW (1) TW200834581A (de)
WO (1) WO2008066058A1 (de)

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7653778B2 (en) 2006-05-08 2010-01-26 Siliconsystems, Inc. Systems and methods for measuring the useful life of solid-state storage devices
US8549236B2 (en) * 2006-12-15 2013-10-01 Siliconsystems, Inc. Storage subsystem with multiple non-volatile memory arrays to protect against data losses
KR20090000192A (ko) * 2007-01-29 2009-01-07 삼성전자주식회사 유효기간 및/ 또는 인듀어런스 데이터를 알려주는 전자시스템 및 그 방법
US7596643B2 (en) * 2007-02-07 2009-09-29 Siliconsystems, Inc. Storage subsystem with configurable buffer
JP5073402B2 (ja) * 2007-07-31 2012-11-14 パナソニック株式会社 メモリーコントローラ、及びこれを用いた不揮発性記憶装置並びに不揮発性記憶システム
CN101632068B (zh) 2007-12-28 2015-01-14 株式会社东芝 半导体存储装置
JP4461170B2 (ja) 2007-12-28 2010-05-12 株式会社東芝 メモリシステム
US8078918B2 (en) * 2008-02-07 2011-12-13 Siliconsystems, Inc. Solid state storage subsystem that maintains and provides access to data reflective of a failure risk
US7962792B2 (en) * 2008-02-11 2011-06-14 Siliconsystems, Inc. Interface for enabling a host computer to retrieve device monitor data from a solid state storage subsystem
JP4439569B2 (ja) 2008-04-24 2010-03-24 株式会社東芝 メモリシステム
JP4683438B2 (ja) * 2008-06-13 2011-05-18 讀賣テレビ放送株式会社 データ放送システム、データ放送方法及びプログラム
CN101625901A (zh) * 2008-07-10 2010-01-13 深圳市朗科科技股份有限公司 半导体存储介质的寿命预警方法、系统及装置
US8140739B2 (en) * 2008-08-08 2012-03-20 Imation Corp. Flash memory based storage devices utilizing magnetoresistive random access memory (MRAM) to store files having logical block addresses stored in a write frequency file buffer table
JP5319985B2 (ja) * 2008-08-22 2013-10-16 株式会社バッファローメモリ ストレージ機器の使用限界予想方法又はその使用限界予想装置若しくはその使用限界予想時間解析用プログラム
JP2010061578A (ja) * 2008-09-05 2010-03-18 Jds:Kk 半導体記憶装置の使用限界予想解析用プログラム又はシステム
US9280466B2 (en) 2008-09-09 2016-03-08 Kabushiki Kaisha Toshiba Information processing device including memory management device managing access from processor to memory and memory management method
JP4575484B2 (ja) 2008-09-26 2010-11-04 株式会社東芝 記憶装置及び記憶装置の制御方法
US20100125696A1 (en) * 2008-11-17 2010-05-20 Prasanth Kumar Memory Controller For Controlling The Wear In A Non-volatile Memory Device And A Method Of Operation Therefor
US20100199020A1 (en) * 2009-02-04 2010-08-05 Silicon Storage Technology, Inc. Non-volatile memory subsystem and a memory controller therefor
JP5268710B2 (ja) * 2009-02-27 2013-08-21 株式会社東芝 半導体記憶装置
JP4843693B2 (ja) 2009-03-30 2011-12-21 株式会社東芝 記憶装置
US8583839B2 (en) * 2009-11-30 2013-11-12 Lsi Corporation Context processing for multiple active write commands in a media controller architecture
US8166258B2 (en) * 2009-07-24 2012-04-24 Lsi Corporation Skip operations for solid state disks
US8245112B2 (en) * 2009-06-04 2012-08-14 Lsi Corporation Flash memory organization
US8555141B2 (en) * 2009-06-04 2013-10-08 Lsi Corporation Flash memory organization
US8219776B2 (en) * 2009-09-23 2012-07-10 Lsi Corporation Logical-to-physical address translation for solid state disks
US20100306451A1 (en) * 2009-06-01 2010-12-02 Joshua Johnson Architecture for nand flash constraint enforcement
US7975193B2 (en) * 2009-06-01 2011-07-05 Lsi Corporation Solid state storage end of life prediction with correction history
US8516264B2 (en) * 2009-10-09 2013-08-20 Lsi Corporation Interlocking plain text passwords to data encryption keys
US8321639B2 (en) * 2009-12-30 2012-11-27 Lsi Corporation Command tracking for direct access block storage devices
JP2011186553A (ja) * 2010-03-04 2011-09-22 Toshiba Corp メモリ管理装置
JP2011070346A (ja) 2009-09-25 2011-04-07 Toshiba Corp メモリシステム
WO2011055169A1 (en) * 2009-11-06 2011-05-12 Freescale Semiconductor, Inc. Response to wearout in an electronic device
JP4762342B2 (ja) * 2009-12-25 2011-08-31 株式会社東芝 記録制御装置及び記録制御方法
JP2011164994A (ja) 2010-02-10 2011-08-25 Toshiba Corp メモリシステム
US9170933B2 (en) * 2010-06-28 2015-10-27 International Business Machines Corporation Wear-level of cells/pages/sub-pages/blocks of a memory
JP2012079100A (ja) * 2010-10-01 2012-04-19 Canon Inc ディスク制御装置及びディスク制御方法、並びにプログラム
KR101190742B1 (ko) * 2010-12-06 2012-10-12 에스케이하이닉스 주식회사 메모리의 콘트롤러 및 이를 포함하는 스토리지 시스템, 메모리의 수명 측정 방법
CN103392208A (zh) 2011-04-28 2013-11-13 株式会社日立制作所 半导体存储装置和用于控制半导体存储装置的方法
CN102163165B (zh) * 2011-05-26 2012-11-14 忆正存储技术（武汉）有限公司 一种闪存错误预估模块及其预估方法
US8719531B2 (en) 2011-06-14 2014-05-06 Western Digital Technologies, Inc. System and method for performing data retention that incorporates environmental conditions
WO2013027642A1 (en) 2011-08-19 2013-02-28 Kabushiki Kaisha Toshiba Information processing apparatus, method for controlling information processing apparatus, non-transitory recording medium storing control tool, host device, non-transitory recording medium storing performance evaluation tool, and performance evaluation method for external memory device
CN102956266B (zh) * 2011-08-30 2015-08-05 株式会社理光 一种在图像形成装置的引擎部中使用的信息存储方法
CN102999448B (zh) * 2011-09-14 2018-07-06 奇智软件（北京）有限公司 一种外部设备检测的处理方法及装置
JP5222388B2 (ja) * 2011-11-22 2013-06-26 株式会社日立製作所 フラッシュメモリを用いたストレージシステムの管理システム及び管理方法
TWI455140B (zh) * 2012-02-21 2014-10-01 Fluiditech Ip Ltd Flash memory usage period assessment method
US20130262942A1 (en) * 2012-03-27 2013-10-03 Yung-Chiang Chu Flash memory lifetime evaluation method
US20140013028A1 (en) * 2012-07-09 2014-01-09 Hamilton Sundstrand Corporation Hardware flash memory wear monitoring
US20140095778A1 (en) * 2012-09-28 2014-04-03 Jaewoong Chung Methods, systems and apparatus to cache code in non-volatile memory
GB2514354A (en) * 2013-05-20 2014-11-26 Ibm Managing storage devices having a lifetime of a finite number of operations
US9875810B2 (en) * 2013-07-24 2018-01-23 Microsoft Technology Licensing, Llc Self-identifying memory errors
CN103559115A (zh) * 2013-09-29 2014-02-05 记忆科技(深圳)有限公司 基于smart的ssd智能监控系统
US9612773B2 (en) * 2013-11-21 2017-04-04 Samsung Electronics Co., Ltd. User device having a host flash translation layer (FTL), a method for transferring an erase count thereof, a method for transferring reprogram information thereof, and a method for transferring a page offset of an open block thereof
CN103678150B (zh) 2013-12-23 2017-06-09 华为技术有限公司 固态硬盘使用方法及装置
CN105005450B (zh) * 2014-04-25 2018-11-02 群联电子股份有限公司 数据写入方法、存储器存储装置及存储器控制电路单元
KR101628925B1 (ko) * 2014-06-17 2016-06-10 고려대학교 산학협력단 메모리 시스템 및 메모리 시스템의 동작 방법
CN105512056A (zh) * 2014-09-24 2016-04-20 中兴通讯股份有限公司 数据保存方法、装置及终端
JP6421042B2 (ja) * 2015-01-16 2018-11-07 ルネサスエレクトロニクス株式会社 情報処理装置
JP6365341B2 (ja) * 2015-02-23 2018-08-01 京セラドキュメントソリューションズ株式会社 画像形成装置
JP6541369B2 (ja) * 2015-02-24 2019-07-10 キヤノン株式会社 メモリのデータ処理を行なうデータ処理装置、データ処理方法、及びプログラム
CN106779008A (zh) * 2015-11-23 2017-05-31 杭州海康威视数字技术股份有限公司 Sd卡、摄像机和sd卡可靠性预警系统
CN105373350A (zh) * 2015-11-23 2016-03-02 联想(北京)有限公司 一种数据管理方法及装置
JP6432499B2 (ja) * 2015-12-18 2018-12-05 京セラドキュメントソリューションズ株式会社 電子機器及びメモリー寿命警告プログラム
JP6515799B2 (ja) * 2015-12-18 2019-05-22 京セラドキュメントソリューションズ株式会社 電子機器及びメモリー寿命警告プログラム
US10558369B2 (en) * 2016-02-01 2020-02-11 Qualcomm Incorporated Flash device lifetime monitor systems and methods
JP6190488B2 (ja) * 2016-04-15 2017-08-30 東芝メモリ株式会社 情報記録システム
US10254982B2 (en) * 2016-11-10 2019-04-09 Western Digital Technologies, Inc. System and methodology for low latency error management within a shared non-volatile memory architecture
US10514867B2 (en) 2016-11-10 2019-12-24 Western Digital Technologies, Inc. System and methodology that facilitates error management within a shared non-volatile memory architecture
JP2018156582A (ja) * 2017-03-21 2018-10-04 キヤノン株式会社 情報処理装置および画像形成装置等のストレージ制御方法
CN106980566B (zh) * 2017-03-27 2020-05-26 联想(北京)有限公司 一种显示控制方法及存储装置
JP7010667B2 (ja) 2017-11-06 2022-01-26 キオクシア株式会社 メモリシステムおよび制御方法
TWI692691B (zh) 2018-01-11 2020-05-01 大陸商合肥沛睿微電子股份有限公司 記憶體控制裝置與記憶體控制方法
US10714187B2 (en) 2018-01-11 2020-07-14 Raymx Microelectronics Corp. Memory control device for estimating time interval and method thereof
JP6913797B2 (ja) * 2018-08-31 2021-08-04 キオクシア株式会社 情報処理装置
KR102599176B1 (ko) * 2018-11-14 2023-11-08 삼성전자주식회사 호스트 메모리 버퍼를 사용하는 스토리지 장치 및 그것의 메모리 관리 방법
JP7424321B2 (ja) * 2019-02-06 2024-01-30 ソニーグループ株式会社 メモリ診断装置およびメモリ診断方法
JP7143487B2 (ja) * 2020-05-18 2022-09-28 キオクシア株式会社 情報処理装置
JP7097631B2 (ja) * 2020-11-04 2022-07-08 株式会社ユピテル システム及びプログラム
KR102775528B1 (ko) 2021-03-02 2025-03-07 삼성전자주식회사 쓰기 동작을 리디렉션하는 스토리지 컨트롤러 및 이의 동작 방법
CN114420183A (zh) * 2022-01-24 2022-04-29 珠海奔图电子有限公司 数据存储控制方法、电子设备及存储介质
CN115132266A (zh) * 2022-06-29 2022-09-30 深圳市德明利技术股份有限公司 数据保护方法、装置、终端设备及可读存储介质

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US265545A (en) * 1882-10-03 Emanuel m
US4224506A (en) * 1978-03-24 1980-09-23 Pitney Bowes Inc. Electronic counter with non-volatile memory
US6078520A (en) * 1993-04-08 2000-06-20 Hitachi, Ltd. Flash memory control method and information processing system therewith
JP3242890B2 (ja) 1998-12-16 2001-12-25 株式会社ハギワラシスコム 記憶装置
US6249838B1 (en) * 1998-12-28 2001-06-19 Cisco Technology Inc. Physical medium information in file system header
JP2001195316A (ja) * 2000-01-14 2001-07-19 Canon Inc バックアップ記憶装置、画像形成装置、バックアップ記憶装置制御方法及び記憶媒体
US20020091965A1 (en) * 2000-12-22 2002-07-11 Mark Moshayedi System and method for early detection of impending failure of a data storage system
US6426898B1 (en) * 2001-03-05 2002-07-30 Micron Technology, Inc. Method of reducing trapped holes induced by erase operations in the tunnel oxide of flash memory cells
US6775624B2 (en) * 2001-10-19 2004-08-10 International Business Machines Corporation Method and apparatus for estimating remaining life of a product
JP2003216506A (ja) * 2002-01-23 2003-07-31 Hitachi Ltd フラッシュメモリを搭載した記憶装置及び計算機
US6751766B2 (en) * 2002-05-20 2004-06-15 Sandisk Corporation Increasing the effectiveness of error correction codes and operating multi-level memory systems by using information about the quality of the stored data
JP4381740B2 (ja) * 2002-08-15 2009-12-09 独立行政法人産業技術総合研究所 光記録再生装置、光記録再生方法及び光記録媒体
JP4110000B2 (ja) 2003-01-28 2008-07-02 株式会社ルネサステクノロジ 記憶装置
JP4073799B2 (ja) * 2003-02-07 2008-04-09 株式会社ルネサステクノロジ メモリシステム
DE102004034042A1 (de) 2004-07-13 2006-02-09 Endress + Hauser Gmbh + Co. Kg Elektronisches Gerät mit einem nicht flüchtigen beschreibbaren Datenspeicher
JP4215746B2 (ja) * 2005-05-20 2009-01-28 Ｎｅｃインフロンティア株式会社 情報処理装置および寿命監視方法
US7512847B2 (en) * 2006-02-10 2009-03-31 Sandisk Il Ltd. Method for estimating and reporting the life expectancy of flash-disk memory
CN1858855A (zh) 2006-02-17 2006-11-08 华为技术有限公司 一种延长非易失存储器寿命的计数方法和装置
US7653778B2 (en) * 2006-05-08 2010-01-26 Siliconsystems, Inc. Systems and methods for measuring the useful life of solid-state storage devices
US7523013B2 (en) * 2006-05-15 2009-04-21 Sandisk Corporation Methods of end of life calculation for non-volatile memories
US7356442B1 (en) * 2006-10-05 2008-04-08 International Business Machines Corporation End of life prediction of flash memory

Also Published As

Publication number Publication date
CN104699546A (zh) 2015-06-10
US8156393B2 (en) 2012-04-10
US20120179942A1 (en) 2012-07-12
EP2088512A4 (de) 2009-11-25
EP2088512B1 (de) 2012-02-22
CN101535967A (zh) 2009-09-16
EP2088512A1 (de) 2009-08-12
WO2008066058A1 (en) 2008-06-05
TWI380302B (de) 2012-12-21
USRE47946E1 (en) 2020-04-14
KR101079502B1 (ko) 2011-11-03
JP4575346B2 (ja) 2010-11-04
JP2008139927A (ja) 2008-06-19
US20100011260A1 (en) 2010-01-14
KR20090079969A (ko) 2009-07-22
TW200834581A (en) 2008-08-16

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