ATE546881T1 - Mikrostrukturierter dünnfilmresonator - Google Patents
Mikrostrukturierter dünnfilmresonatorInfo
- Publication number
- ATE546881T1 ATE546881T1 AT04078526T AT04078526T ATE546881T1 AT E546881 T1 ATE546881 T1 AT E546881T1 AT 04078526 T AT04078526 T AT 04078526T AT 04078526 T AT04078526 T AT 04078526T AT E546881 T1 ATE546881 T1 AT E546881T1
- Authority
- AT
- Austria
- Prior art keywords
- bottom electrode
- electrode
- top electrode
- thin film
- film resonator
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
- H01G5/18—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes due to change in inclination, e.g. by flexing, by spiral wrapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/38—Multiple capacitors, e.g. ganged
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/022—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the cantilever type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/027—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the microelectro-mechanical [MEMS] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H2009/241—Bulk-mode MEMS resonators
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP03447311A EP1548935A1 (de) | 2003-12-24 | 2003-12-24 | Mikrostrukturierter Dünnfilmresonator |
| US53332203P | 2003-12-29 | 2003-12-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE546881T1 true ATE546881T1 (de) | 2012-03-15 |
Family
ID=34530891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT04078526T ATE546881T1 (de) | 2003-12-24 | 2004-12-24 | Mikrostrukturierter dünnfilmresonator |
Country Status (2)
| Country | Link |
|---|---|
| EP (1) | EP1548935A1 (de) |
| AT (1) | ATE546881T1 (de) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7847649B2 (en) | 2005-12-23 | 2010-12-07 | Nxp B.V. | MEMS resonator, a method of manufacturing thereof, and a MEMS oscillator |
| CN101523527B (zh) * | 2006-10-12 | 2011-09-14 | 艾利森电话股份有限公司 | 电容装置及与其相关的方法 |
| US9735338B2 (en) | 2009-01-26 | 2017-08-15 | Cymatics Laboratories Corp. | Protected resonator |
| US8030823B2 (en) | 2009-01-26 | 2011-10-04 | Resonance Semiconductor Corporation | Protected resonator |
| EP2339748B1 (de) * | 2009-09-28 | 2018-12-19 | Nxp B.V. | Resonator |
| CN112311353B (zh) * | 2019-08-01 | 2024-08-06 | 芯知微(上海)电子科技有限公司 | 一种牢固安置型体声波谐振器及其制造方法 |
| CN112787613B (zh) * | 2019-11-11 | 2024-06-18 | 芯知微(上海)电子科技有限公司 | 一种薄膜压电声波谐振器及其制造方法 |
| CN112994639B (zh) * | 2019-12-16 | 2026-08-11 | 中芯集成电路(宁波)有限公司 | 一种薄膜压电声波谐振器及其制造方法及滤波器 |
| CN111030634B (zh) * | 2019-12-31 | 2021-04-16 | 诺思(天津)微系统有限责任公司 | 带电学隔离层的体声波谐振器及其制造方法、滤波器及电子设备 |
| CN111146328A (zh) * | 2019-12-31 | 2020-05-12 | 诺思(天津)微系统有限责任公司 | 单晶压电结构及具有其的电子设备 |
| CN116996038B (zh) * | 2022-04-25 | 2024-05-28 | 锐石创芯(重庆)科技有限公司 | 滤波器、多工器及射频前端模组 |
| CN119448970A (zh) * | 2024-12-13 | 2025-02-14 | 武汉敏声新技术有限公司 | 一种体声波谐振器及其制备方法、滤波器 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU980252A1 (ru) * | 1981-01-05 | 1982-12-07 | Государственный Угличский Часовой Завод Им.50-Летия Ссср | Пьезоэлектрический резонатор |
| US5747857A (en) * | 1991-03-13 | 1998-05-05 | Matsushita Electric Industrial Co., Ltd. | Electronic components having high-frequency elements and methods of manufacture therefor |
| US5339051A (en) * | 1991-12-09 | 1994-08-16 | Sandia Corporation | Micro-machined resonator oscillator |
| JPH06350371A (ja) * | 1993-06-10 | 1994-12-22 | Matsushita Electric Ind Co Ltd | 圧電デバイスの製造方法 |
| US5617065A (en) * | 1995-06-29 | 1997-04-01 | Motorola, Inc. | Filter using enhanced quality factor resonator and method |
| US6958566B2 (en) * | 2001-08-16 | 2005-10-25 | The Regents Of The University Of Michigan | Mechanical resonator device having phenomena-dependent electrical stiffness |
| DE10153434C2 (de) * | 2001-10-30 | 2003-12-18 | Epcos Ag | Magnetisch abstimmbares Filter |
| JP2003273698A (ja) * | 2002-01-11 | 2003-09-26 | Piedekku Gijutsu Kenkyusho:Kk | 電子機器 |
-
2003
- 2003-12-24 EP EP03447311A patent/EP1548935A1/de not_active Withdrawn
-
2004
- 2004-12-24 AT AT04078526T patent/ATE546881T1/de active
Also Published As
| Publication number | Publication date |
|---|---|
| EP1548935A1 (de) | 2005-06-29 |
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