ATE556431T1 - Verfahren und vorrichtung zum trocknen von halbleiterwafer-oberflächen mittels mehrerer, in nächster nähe zu den waferoberflächen angebrachter ein- und auslässe - Google Patents

Verfahren und vorrichtung zum trocknen von halbleiterwafer-oberflächen mittels mehrerer, in nächster nähe zu den waferoberflächen angebrachter ein- und auslässe

Info

Publication number
ATE556431T1
ATE556431T1 AT07007143T AT07007143T ATE556431T1 AT E556431 T1 ATE556431 T1 AT E556431T1 AT 07007143 T AT07007143 T AT 07007143T AT 07007143 T AT07007143 T AT 07007143T AT E556431 T1 ATE556431 T1 AT E556431T1
Authority
AT
Austria
Prior art keywords
wafer surfaces
manifold
substrate
mounted close
process window
Prior art date
Application number
AT07007143T
Other languages
English (en)
Inventor
Larios John M De
James P Garcia
Carl Woods
Mike Ravkin
Fritz Redeker
John Boyd
Afshin Nickhou
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/261,839 external-priority patent/US7234477B2/en
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE556431T1 publication Critical patent/ATE556431T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/34—Pretreatment of metallic surfaces to be electroplated
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0412—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
  • Cleaning By Liquid Or Steam (AREA)
AT07007143T 2002-09-30 2003-09-30 Verfahren und vorrichtung zum trocknen von halbleiterwafer-oberflächen mittels mehrerer, in nächster nähe zu den waferoberflächen angebrachter ein- und auslässe ATE556431T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/261,839 US7234477B2 (en) 2000-06-30 2002-09-30 Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces
US10/611,140 US7264007B2 (en) 2002-09-30 2003-06-30 Method and apparatus for cleaning a substrate using megasonic power

Publications (1)

Publication Number Publication Date
ATE556431T1 true ATE556431T1 (de) 2012-05-15

Family

ID=32030081

Family Applications (2)

Application Number Title Priority Date Filing Date
AT03798814T ATE448563T1 (de) 2002-09-30 2003-09-30 Verfahren zur substratbehandlung und trockungs- sammelrohr
AT07007143T ATE556431T1 (de) 2002-09-30 2003-09-30 Verfahren und vorrichtung zum trocknen von halbleiterwafer-oberflächen mittels mehrerer, in nächster nähe zu den waferoberflächen angebrachter ein- und auslässe

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AT03798814T ATE448563T1 (de) 2002-09-30 2003-09-30 Verfahren zur substratbehandlung und trockungs- sammelrohr

Country Status (8)

Country Link
US (9) US7240679B2 (de)
EP (2) EP2117033B1 (de)
KR (4) KR101060542B1 (de)
CN (1) CN101369522B (de)
AT (2) ATE448563T1 (de)
DE (1) DE60329978D1 (de)
IL (2) IL161550A (de)
SG (1) SG144740A1 (de)

Families Citing this family (100)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7584761B1 (en) * 2000-06-30 2009-09-08 Lam Research Corporation Wafer edge surface treatment with liquid meniscus
US7234477B2 (en) * 2000-06-30 2007-06-26 Lam Research Corporation Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces
US20040031167A1 (en) 2002-06-13 2004-02-19 Stein Nathan D. Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife
US7383843B2 (en) * 2002-09-30 2008-06-10 Lam Research Corporation Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
US7614411B2 (en) * 2002-09-30 2009-11-10 Lam Research Corporation Controls of ambient environment during wafer drying using proximity head
US7632376B1 (en) 2002-09-30 2009-12-15 Lam Research Corporation Method and apparatus for atomic layer deposition (ALD) in a proximity system
US7997288B2 (en) * 2002-09-30 2011-08-16 Lam Research Corporation Single phase proximity head having a controlled meniscus for treating a substrate
US8236382B2 (en) * 2002-09-30 2012-08-07 Lam Research Corporation Proximity substrate preparation sequence, and method, apparatus, and system for implementing the same
US7293571B2 (en) 2002-09-30 2007-11-13 Lam Research Corporation Substrate proximity processing housing and insert for generating a fluid meniscus
US7513262B2 (en) 2002-09-30 2009-04-07 Lam Research Corporation Substrate meniscus interface and methods for operation
US7045018B2 (en) * 2002-09-30 2006-05-16 Lam Research Corporation Substrate brush scrubbing and proximity cleaning-drying sequence using compatible chemistries, and method, apparatus, and system for implementing the same
US7329321B2 (en) * 2002-09-30 2008-02-12 Lam Research Corporation Enhanced wafer cleaning method
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US7810513B1 (en) * 2002-09-30 2010-10-12 Lam Research Corporation Substrate preparation using megasonic coupling fluid meniscus and methods, apparatus, and systems for implementing the same
US6988326B2 (en) * 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US7240679B2 (en) * 2002-09-30 2007-07-10 Lam Research Corporation System for substrate processing with meniscus, vacuum, IPA vapor, drying manifold
US7520285B2 (en) * 2002-09-30 2009-04-21 Lam Research Corporation Apparatus and method for processing a substrate
US7389783B2 (en) * 2002-09-30 2008-06-24 Lam Research Corporation Proximity meniscus manifold
US7153400B2 (en) * 2002-09-30 2006-12-26 Lam Research Corporation Apparatus and method for depositing and planarizing thin films of semiconductor wafers
US20040226654A1 (en) * 2002-12-17 2004-11-18 Akihisa Hongo Substrate processing apparatus and substrate processing method
KR101369016B1 (ko) 2003-04-10 2014-02-28 가부시키가이샤 니콘 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템
EP3352015A1 (de) 2003-04-10 2018-07-25 Nikon Corporation Umweltsystem mit einer transportregion für eine immersionslithographievorrichtung
EP1635960A2 (de) * 2003-06-06 2006-03-22 P.C.T. Systems, Inc. Verfahren und vorrichtung zur bearbeitung von substraten mit megaschallenergie
US7675000B2 (en) * 2003-06-24 2010-03-09 Lam Research Corporation System method and apparatus for dry-in, dry-out, low defect laser dicing using proximity technology
US7696141B2 (en) * 2003-06-27 2010-04-13 Lam Research Corporation Cleaning compound and method and system for using the cleaning compound
US6809794B1 (en) * 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
CN1920105B (zh) 2003-10-22 2010-12-08 内克斯系统公司 用于对工件进行流体处理的方法和设备
US7528929B2 (en) 2003-11-14 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7353560B2 (en) * 2003-12-18 2008-04-08 Lam Research Corporation Proximity brush unit apparatus and method
US8522799B2 (en) * 2005-12-30 2013-09-03 Lam Research Corporation Apparatus and system for cleaning a substrate
KR101504445B1 (ko) 2004-03-25 2015-03-19 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US8062471B2 (en) * 2004-03-31 2011-11-22 Lam Research Corporation Proximity head heating method and apparatus
US7645364B2 (en) 2004-06-30 2010-01-12 Lam Research Corporation Apparatus and method for plating semiconductor wafers
TWI267405B (en) * 2004-07-20 2006-12-01 Sez Ag Fluid discharging device
US7718009B2 (en) * 2004-08-30 2010-05-18 Applied Materials, Inc. Cleaning submicron structures on a semiconductor wafer surface
WO2006038472A1 (ja) * 2004-10-06 2006-04-13 Ebara Corporation 基板処理装置及び基板処理方法
US7362412B2 (en) * 2004-11-18 2008-04-22 International Business Machines Corporation Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system
US20070093067A1 (en) * 2005-10-24 2007-04-26 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer edge cleaning process
EP2428557A1 (de) * 2005-12-30 2012-03-14 LAM Research Corporation Reinigungslösung
US9987666B2 (en) 2006-01-20 2018-06-05 Naura Akrion Inc. Composite transducer apparatus and system for processing a substrate and method of constructing the same
US9049520B2 (en) 2006-01-20 2015-06-02 Akrion Systems Llc Composite transducer apparatus and system for processing a substrate and method of constructing the same
JP4959721B2 (ja) * 2006-01-20 2012-06-27 アクリオン テクノロジーズ インク 平らな物を処理するための音響エネルギシステム、方法及び装置
US7969548B2 (en) * 2006-05-22 2011-06-28 Asml Netherlands B.V. Lithographic apparatus and lithographic apparatus cleaning method
US7928366B2 (en) * 2006-10-06 2011-04-19 Lam Research Corporation Methods of and apparatus for accessing a process chamber using a dual zone gas injector with improved optical access
US8291921B2 (en) * 2008-08-19 2012-10-23 Lam Research Corporation Removing bubbles from a fluid flowing down through a plenum
US8813764B2 (en) * 2009-05-29 2014-08-26 Lam Research Corporation Method and apparatus for physical confinement of a liquid meniscus over a semiconductor wafer
US7946303B2 (en) * 2006-09-29 2011-05-24 Lam Research Corporation Carrier for reducing entrance and/or exit marks left by a substrate-processing meniscus
WO2008070295A2 (en) * 2006-10-17 2008-06-12 Akrion Technologies, Inc. System and method for the sonic-assisted cleaning of substrates utilizing a sonic-treated liquid
JP4755573B2 (ja) * 2006-11-30 2011-08-24 東京応化工業株式会社 処理装置および処理方法、ならびに表面処理治具
US8327861B2 (en) * 2006-12-19 2012-12-11 Lam Research Corporation Megasonic precision cleaning of semiconductor process equipment components and parts
US20080148595A1 (en) * 2006-12-20 2008-06-26 Lam Research Corporation Method and apparatus for drying substrates using a surface tensions reducing gas
US8146902B2 (en) * 2006-12-21 2012-04-03 Lam Research Corporation Hybrid composite wafer carrier for wet clean equipment
US20080149147A1 (en) * 2006-12-22 2008-06-26 Lam Research Proximity head with configurable delivery
US8464736B1 (en) 2007-03-30 2013-06-18 Lam Research Corporation Reclaim chemistry
US7975708B2 (en) * 2007-03-30 2011-07-12 Lam Research Corporation Proximity head with angled vacuum conduit system, apparatus and method
US8947629B2 (en) * 2007-05-04 2015-02-03 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US7866330B2 (en) * 2007-05-04 2011-01-11 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US7900641B2 (en) 2007-05-04 2011-03-08 Asml Netherlands B.V. Cleaning device and a lithographic apparatus cleaning method
US8141566B2 (en) * 2007-06-19 2012-03-27 Lam Research Corporation System, method and apparatus for maintaining separation of liquids in a controlled meniscus
US8673769B2 (en) * 2007-06-20 2014-03-18 Lam Research Corporation Methods and apparatuses for three dimensional integrated circuits
US8323460B2 (en) * 2007-06-20 2012-12-04 Lam Research Corporation Methods and systems for three-dimensional integrated circuit through hole via gapfill and overburden removal
JP4971078B2 (ja) * 2007-08-30 2012-07-11 東京応化工業株式会社 表面処理装置
JP2009141081A (ja) * 2007-12-05 2009-06-25 Sumco Corp 半導体ウェーハ表面検査装置
US8226775B2 (en) 2007-12-14 2012-07-24 Lam Research Corporation Methods for particle removal by single-phase and two-phase media
SG188086A1 (en) * 2008-02-08 2013-03-28 Lam Res Corp Apparatus for substantially uniform fluid flow rates relative to a proximity head in processing of a wafer surface by a meniscus
US7967916B2 (en) * 2008-03-14 2011-06-28 Lam Research Corporation Method of preventing pattern collapse during rinsing and drying
US8585825B2 (en) * 2008-10-30 2013-11-19 Lam Research Corporation Acoustic assisted single wafer wet clean for semiconductor wafer process
US8739805B2 (en) * 2008-11-26 2014-06-03 Lam Research Corporation Confinement of foam delivered by a proximity head
EP2226834B1 (de) * 2009-03-06 2020-04-29 IMEC vzw Verfahren zur mit physischer Kraft unterstützten Reinigung mit verringertem Schaden
FR2944624A1 (fr) * 2009-04-16 2010-10-22 Miyowa Procede pour autoriser une connexion entre un terminal informatique et un serveur source
US7849554B2 (en) * 2009-04-28 2010-12-14 Lam Research Corporation Apparatus and system for cleaning substrate
US8317934B2 (en) * 2009-05-13 2012-11-27 Lam Research Corporation Multi-stage substrate cleaning method and apparatus
US8845812B2 (en) * 2009-06-12 2014-09-30 Micron Technology, Inc. Method for contamination removal using magnetic particles
JP5140641B2 (ja) * 2009-06-29 2013-02-06 株式会社荏原製作所 基板処理方法及び基板処理装置
EP2315235B1 (de) * 2009-10-21 2019-04-24 IMEC vzw Verfahren und Vorrichtung zur Reinigung eines Halbleitersubstrats
US9111729B2 (en) * 2009-12-03 2015-08-18 Lam Research Corporation Small plasma chamber systems and methods
US20110139183A1 (en) * 2009-12-11 2011-06-16 Katrina Mikhaylichenko System and method of preventing pattern collapse using low surface tension fluid
NL2005717A (en) * 2009-12-18 2011-06-21 Asml Netherlands Bv A lithographic apparatus and a device manufacturing method.
US9044794B2 (en) * 2009-12-31 2015-06-02 Lam Research Ag Ultrasonic cleaning fluid, method and apparatus
US9190289B2 (en) * 2010-02-26 2015-11-17 Lam Research Corporation System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas
ITMI20100407A1 (it) * 2010-03-12 2011-09-13 Rise Technology S R L Cella foto-voltaica con regioni di semiconduttore poroso per ancorare terminali di contatto
US9155181B2 (en) 2010-08-06 2015-10-06 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
US8999104B2 (en) 2010-08-06 2015-04-07 Lam Research Corporation Systems, methods and apparatus for separate plasma source control
US9449793B2 (en) 2010-08-06 2016-09-20 Lam Research Corporation Systems, methods and apparatus for choked flow element extraction
US9967965B2 (en) 2010-08-06 2018-05-08 Lam Research Corporation Distributed, concentric multi-zone plasma source systems, methods and apparatus
US9662686B2 (en) * 2010-09-24 2017-05-30 Lam Research Ag Ultrasonic cleaning method and apparatus
US9931017B2 (en) * 2010-11-16 2018-04-03 Martin A. Alpert Washing apparatus and method with spiral air flow for drying
US20120260517A1 (en) * 2011-04-18 2012-10-18 Lam Research Corporation Apparatus and Method for Reducing Substrate Pattern Collapse During Drying Operations
US8926762B2 (en) * 2011-09-06 2015-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and methods for movable megasonic wafer probe
US8968485B2 (en) 2011-09-30 2015-03-03 Lam Research Corporation Apparatus and methods for processing a substrate
US9418904B2 (en) 2011-11-14 2016-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Localized CMP to improve wafer planarization
US9177762B2 (en) 2011-11-16 2015-11-03 Lam Research Corporation System, method and apparatus of a wedge-shaped parallel plate plasma reactor for substrate processing
US10283325B2 (en) 2012-10-10 2019-05-07 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
US10065288B2 (en) 2012-02-14 2018-09-04 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing (CMP) platform for local profile control
US8869422B2 (en) 2012-04-27 2014-10-28 Applied Materials, Inc. Methods and apparatus for marangoni substrate drying using a vapor knife manifold
US9808891B2 (en) * 2014-01-16 2017-11-07 Taiwan Semiconductor Manufacturing Co., Ltd. Tool and method of reflow
US9666461B1 (en) * 2016-02-05 2017-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor process and semiconductor processing device using the same
JP6916003B2 (ja) * 2017-02-24 2021-08-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
EP3802018B1 (de) * 2018-06-01 2025-01-22 Touchless Development GmbH Vorrichtung zur berührungslosen objekthandhabung
EP4056736A1 (de) * 2021-03-09 2022-09-14 Semsysco GmbH Verteilungssystem für eine prozessflüssigkeit zur chemischen und/oder elektrolytischen oberflächenbehandlung eines substrats

Family Cites Families (110)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3953265A (en) * 1975-04-28 1976-04-27 International Business Machines Corporation Meniscus-contained method of handling fluids in the manufacture of semiconductor wafers
US4086870A (en) * 1977-06-30 1978-05-02 International Business Machines Corporation Novel resist spinning head
US4367123A (en) * 1980-07-09 1983-01-04 Olin Corporation Precision spot plating process and apparatus
JPS5852034B2 (ja) 1981-08-26 1983-11-19 株式会社ソニツクス 部分メツキ方法及びその装置
US4444492A (en) 1982-05-15 1984-04-24 General Signal Corporation Apparatus for projecting a series of images onto dies of a semiconductor wafer
US4838289A (en) * 1982-08-03 1989-06-13 Texas Instruments Incorporated Apparatus and method for edge cleaning
JPS62150828A (ja) 1985-12-25 1987-07-04 Mitsubishi Electric Corp ウエハ乾燥装置
JPH0712035B2 (ja) 1989-04-20 1995-02-08 三菱電機株式会社 噴流式液処理装置
JPH02309638A (ja) 1989-05-24 1990-12-25 Fujitsu Ltd ウエハーエッチング装置
JPH0628223Y2 (ja) 1989-06-14 1994-08-03 大日本スクリーン製造株式会社 回転塗布装置
US5271774A (en) 1990-03-01 1993-12-21 U.S. Philips Corporation Method for removing in a centrifuge a liquid from a surface of a substrate
US5102494A (en) * 1990-07-13 1992-04-07 Mobil Solar Energy Corporation Wet-tip die for EFG cyrstal growth apparatus
US5294257A (en) * 1991-10-28 1994-03-15 International Business Machines Corporation Edge masking spin tool
US5343234A (en) * 1991-11-15 1994-08-30 Kuehnle Manfred R Digital color proofing system and method for offset and gravure printing
US5749469A (en) * 1992-05-15 1998-05-12 Fluoroware, Inc. Wafer carrier
JP2896268B2 (ja) * 1992-05-22 1999-05-31 三菱電機株式会社 半導体基板の表面処理装置及びその制御方法
JP2877216B2 (ja) 1992-10-02 1999-03-31 東京エレクトロン株式会社 洗浄装置
US5472502A (en) * 1993-08-30 1995-12-05 Semiconductor Systems, Inc. Apparatus and method for spin coating wafers and the like
US5807522A (en) * 1994-06-17 1998-09-15 The Board Of Trustees Of The Leland Stanford Junior University Methods for fabricating microarrays of biological samples
CZ288371B6 (en) * 1994-06-30 2001-06-13 Procter & Gamble Structure for transport of liquids and process for producing thereof
US5705223A (en) * 1994-07-26 1998-01-06 International Business Machine Corp. Method and apparatus for coating a semiconductor wafer
JP3247270B2 (ja) 1994-08-25 2002-01-15 東京エレクトロン株式会社 処理装置及びドライクリーニング方法
US5558111A (en) 1995-02-02 1996-09-24 International Business Machines Corporation Apparatus and method for carrier backing film reconditioning
US5601655A (en) 1995-02-14 1997-02-11 Bok; Hendrik F. Method of cleaning substrates
JPH08277486A (ja) 1995-04-04 1996-10-22 Dainippon Printing Co Ltd リードフレームのめっき装置
TW386235B (en) 1995-05-23 2000-04-01 Tokyo Electron Ltd Method for spin rinsing
US5660642A (en) * 1995-05-26 1997-08-26 The Regents Of The University Of California Moving zone Marangoni drying of wet objects using naturally evaporated solvent vapor
US5975098A (en) 1995-12-21 1999-11-02 Dainippon Screen Mfg. Co., Ltd. Apparatus for and method of cleaning substrate
DE19622015A1 (de) 1996-05-31 1997-12-04 Siemens Ag Verfahren zum Ätzen von Zerstörungszonen an einem Halbleitersubstratrand sowie Ätzanlage
US6221171B1 (en) * 1996-06-04 2001-04-24 Ebara Corporation Method and apparatus for conveying a workpiece
US5985031A (en) * 1996-06-21 1999-11-16 Micron Technology, Inc. Spin coating spindle and chuck assembly
US6039059A (en) * 1996-09-30 2000-03-21 Verteq, Inc. Wafer cleaning system
TW357406B (en) * 1996-10-07 1999-05-01 Tokyo Electron Ltd Method and apparatus for cleaning and drying a substrate
US5830334A (en) 1996-11-07 1998-11-03 Kobayashi; Hideyuki Nozzle for fast plating with plating solution jetting and suctioning functions
JPH1133506A (ja) * 1997-07-24 1999-02-09 Tadahiro Omi 流体処理装置及び洗浄処理システム
JPH10163138A (ja) * 1996-11-29 1998-06-19 Fujitsu Ltd 半導体装置の製造方法および研磨装置
JPH10232498A (ja) * 1997-02-19 1998-09-02 Nec Kyushu Ltd 現像装置
JP2983495B2 (ja) * 1997-05-20 1999-11-29 株式会社カイジョー 基板の乾燥方法
WO1999001551A2 (en) * 1997-06-30 1999-01-14 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Novel inhibitor of cellular proliferation
JPH1131672A (ja) 1997-07-10 1999-02-02 Hitachi Ltd 基板処理方法および基板処理装置
US6158449A (en) * 1997-07-17 2000-12-12 Tokyo Electron Limited Cleaning and drying method and apparatus
US6103636A (en) 1997-08-20 2000-08-15 Micron Technology, Inc. Method and apparatus for selective removal of material from wafer alignment marks
US6491764B2 (en) 1997-09-24 2002-12-10 Interuniversitair Microelektronics Centrum (Imec) Method and apparatus for removing a liquid from a surface of a rotating substrate
EP0905748B1 (de) * 1997-09-24 2006-03-15 Interuniversitair Micro-Elektronica Centrum Vzw Verfahren zum Entfernen von Teilchen und Flüssigkeit von der Oberfläche eines Substrats
EP0905746A1 (de) 1997-09-24 1999-03-31 Interuniversitair Micro-Elektronica Centrum Vzw Verfahren zum Entfernen einer Flüssigkeit von einer Oberfläche einer umlaufenden Substrat
JP4017680B2 (ja) 1997-09-24 2007-12-05 アンテルユニヴェルシテール・ミクロ―エレクトロニカ・サントリュム・ヴェー・ゼッド・ドゥブルヴェ 表面から液体を除去する方法及び装置
US6398975B1 (en) 1997-09-24 2002-06-04 Interuniversitair Microelektronica Centrum (Imec) Method and apparatus for localized liquid treatment of the surface of a substrate
JP4616948B2 (ja) 1997-09-24 2011-01-19 アイメック 回転基材の表面から液体を除去する方法および装置
US5933902A (en) * 1997-11-18 1999-08-10 Frey; Bernhard M. Wafer cleaning system
US6383289B2 (en) * 1997-12-16 2002-05-07 The University Of North Carolina At Chapel Hill Apparatus for liquid carbon dioxide systems
KR100474746B1 (ko) 1998-02-12 2005-03-08 에이씨엠 리서치, 인코포레이티드 도금 장치 및 방법
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
US6108932A (en) 1998-05-05 2000-08-29 Steag Microtech Gmbh Method and apparatus for thermocapillary drying
JPH11350169A (ja) 1998-06-10 1999-12-21 Chemitoronics Co ウエットエッチング装置およびウエットエッチングの方法
US6132586A (en) * 1998-06-11 2000-10-17 Integrated Process Equipment Corporation Method and apparatus for non-contact metal plating of semiconductor wafers using a bipolar electrode assembly
JP2000015159A (ja) * 1998-07-02 2000-01-18 Dainippon Screen Mfg Co Ltd 処理液供給装置
US6460552B1 (en) * 1998-10-05 2002-10-08 Lorimer D'arcy H. Method and apparatus for cleaning flat workpieces
US6689323B2 (en) * 1998-10-30 2004-02-10 Agilent Technologies Method and apparatus for liquid transfer
US6092937A (en) 1999-01-08 2000-07-25 Fastar, Ltd. Linear developer
US6328814B1 (en) * 1999-03-26 2001-12-11 Applied Materials, Inc. Apparatus for cleaning and drying substrates
JP3653198B2 (ja) * 1999-07-16 2005-05-25 アルプス電気株式会社 乾燥用ノズルおよびこれを用いた乾燥装置ならびに洗浄装置
US20020121290A1 (en) * 1999-08-25 2002-09-05 Applied Materials, Inc. Method and apparatus for cleaning/drying hydrophobic wafers
US6222305B1 (en) * 1999-08-27 2001-04-24 Product Systems Incorporated Chemically inert megasonic transducer system
JP3635217B2 (ja) 1999-10-05 2005-04-06 東京エレクトロン株式会社 液処理装置及びその方法
WO2001027357A1 (en) 1999-10-12 2001-04-19 Semitool, Inc. Method and apparatus for executing plural processes on a microelectronic workpiece at a single processing station
US6341998B1 (en) * 1999-11-04 2002-01-29 Vlsi Technology, Inc. Integrated circuit (IC) plating deposition system and method
US6214513B1 (en) * 1999-11-24 2001-04-10 Xerox Corporation Slot coating under an electric field
US6433541B1 (en) * 1999-12-23 2002-08-13 Kla-Tencor Corporation In-situ metalization monitoring using eddy current measurements during the process for removing the film
US20030091754A1 (en) 2000-02-11 2003-05-15 Thami Chihani Method for treating cellulosic fibres
US6474786B2 (en) * 2000-02-24 2002-11-05 The Board Of Trustees Of The Leland Stanford Junior University Micromachined two-dimensional array droplet ejectors
US6495005B1 (en) 2000-05-01 2002-12-17 International Business Machines Corporation Electroplating apparatus
WO2001087491A1 (en) 2000-05-16 2001-11-22 Regents Of The University Of Minnesota High mass throughput particle generation using multiple nozzle spraying
AU2001270205A1 (en) 2000-06-26 2002-01-08 Applied Materials, Inc. Method and apparatus for wafer cleaning
US7234477B2 (en) 2000-06-30 2007-06-26 Lam Research Corporation Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces
US6488040B1 (en) 2000-06-30 2002-12-03 Lam Research Corporation Capillary proximity heads for single wafer cleaning and drying
US7000622B2 (en) 2002-09-30 2006-02-21 Lam Research Corporation Methods and systems for processing a bevel edge of a substrate using a dynamic liquid meniscus
US6530823B1 (en) 2000-08-10 2003-03-11 Nanoclean Technologies Inc Methods for cleaning surfaces substantially free of contaminants
JP2002075947A (ja) * 2000-08-30 2002-03-15 Alps Electric Co Ltd ウェット処理装置
US6555017B1 (en) * 2000-10-13 2003-04-29 The Regents Of The University Of Caliofornia Surface contouring by controlled application of processing fluid using Marangoni effect
TW563196B (en) 2000-10-30 2003-11-21 Dainippon Screen Mfg Substrate processing apparatus
US6531206B2 (en) 2001-02-07 2003-03-11 3M Innovative Properties Company Microstructured surface film assembly for liquid acquisition and transport
JP4114188B2 (ja) 2001-06-12 2008-07-09 アクリオン テクノロジーズ， インコーポレイテッド メガソニック洗浄乾燥システム
TW554069B (en) 2001-08-10 2003-09-21 Ebara Corp Plating device and method
JP2003115474A (ja) 2001-10-03 2003-04-18 Ebara Corp 基板処理装置及び方法
JP4003441B2 (ja) 2001-11-08 2007-11-07 セイコーエプソン株式会社 表面処理装置および表面処理方法
US6799584B2 (en) 2001-11-09 2004-10-05 Applied Materials, Inc. Condensation-based enhancement of particle removal by suction
US20040083976A1 (en) * 2002-09-25 2004-05-06 Silterra Malaysia Sdn. Bhd. Modified deposition ring to eliminate backside and wafer edge coating
US6988326B2 (en) * 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US7383843B2 (en) * 2002-09-30 2008-06-10 Lam Research Corporation Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
US6988327B2 (en) * 2002-09-30 2006-01-24 Lam Research Corporation Methods and systems for processing a substrate using a dynamic liquid meniscus
US6954993B1 (en) 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
CN100350552C (zh) 2002-09-30 2007-11-21 拉姆研究公司 使用弯液面、负压、ipa蒸汽、干燥歧管进行基板处理的系统
US7069937B2 (en) * 2002-09-30 2006-07-04 Lam Research Corporation Vertical proximity processor
US7614411B2 (en) 2002-09-30 2009-11-10 Lam Research Corporation Controls of ambient environment during wafer drying using proximity head
US7389783B2 (en) * 2002-09-30 2008-06-24 Lam Research Corporation Proximity meniscus manifold
US7513262B2 (en) * 2002-09-30 2009-04-07 Lam Research Corporation Substrate meniscus interface and methods for operation
US7093375B2 (en) 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US7252097B2 (en) 2002-09-30 2007-08-07 Lam Research Corporation System and method for integrating in-situ metrology within a wafer process
US7293571B2 (en) * 2002-09-30 2007-11-13 Lam Research Corporation Substrate proximity processing housing and insert for generating a fluid meniscus
US7240679B2 (en) * 2002-09-30 2007-07-10 Lam Research Corporation System for substrate processing with meniscus, vacuum, IPA vapor, drying manifold
US7367345B1 (en) * 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US7153400B2 (en) 2002-09-30 2006-12-26 Lam Research Corporation Apparatus and method for depositing and planarizing thin films of semiconductor wafers
DE60335595D1 (de) * 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
SG121822A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG121819A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1489461A1 (de) 2003-06-11 2004-12-22 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
US7713841B2 (en) * 2003-09-19 2010-05-11 Micron Technology, Inc. Methods for thinning semiconductor substrates that employ support structures formed on the substrates
US7353560B2 (en) * 2003-12-18 2008-04-08 Lam Research Corporation Proximity brush unit apparatus and method
US7003899B1 (en) 2004-09-30 2006-02-28 Lam Research Corporation System and method for modulating flow through multiple ports in a proximity head

Also Published As

Publication number Publication date
KR20100130230A (ko) 2010-12-10
KR101060542B1 (ko) 2011-08-30
KR101118491B1 (ko) 2012-03-12
US20070023070A1 (en) 2007-02-01
DE60329978D1 (de) 2009-12-24
US20070107756A1 (en) 2007-05-17
US20090320884A1 (en) 2009-12-31
US20040060573A1 (en) 2004-04-01
ATE448563T1 (de) 2009-11-15
US20140332037A1 (en) 2014-11-13
US20040069319A1 (en) 2004-04-15
CN101369522B (zh) 2013-06-26
US7240679B2 (en) 2007-07-10
IL190454A0 (en) 2008-11-03
US20040060580A1 (en) 2004-04-01
EP1801851A2 (de) 2007-06-27
KR20100133459A (ko) 2010-12-21
KR20100131511A (ko) 2010-12-15
US20090151753A1 (en) 2009-06-18
US7350316B2 (en) 2008-04-01
SG144740A1 (en) 2008-08-28
CN101369522A (zh) 2009-02-18
US7731802B2 (en) 2010-06-08
US7264007B2 (en) 2007-09-04
US7722724B2 (en) 2010-05-25
IL161550A (en) 2010-12-30
US7383844B2 (en) 2008-06-10
US7198055B2 (en) 2007-04-03
KR101056970B1 (ko) 2011-08-16
EP1801851A3 (de) 2007-08-29
IL190454A (en) 2011-12-29
EP2117033B1 (de) 2013-02-27
US20070235409A1 (en) 2007-10-11
EP1801851B1 (de) 2012-05-02
KR20100087399A (ko) 2010-08-04
KR101056969B1 (ko) 2011-08-16
EP2117033A1 (de) 2009-11-11

Similar Documents

Publication Publication Date Title
ATE556431T1 (de) Verfahren und vorrichtung zum trocknen von halbleiterwafer-oberflächen mittels mehrerer, in nächster nähe zu den waferoberflächen angebrachter ein- und auslässe
MY163666A (en) Apparatus and method for processing a substrate
MY143956A (en) Controls of ambient environment during wafer drying using proximity head
DE10196121T1 (de) Verfahren und Vorrichtung zum Kontrollieren chemischer Wechselwirkungen während der Planarisierung mikroelektronischer Substrate
DE60042970D1 (de) Verfahren und vorrichtung zur reinigung von einem halbleiterwafer
ATE468602T1 (de) Vorrichtung zum ätzen von wafern durch einzelwafer-verfahren und verfahren zum ätzen von einzelnen wafern
MY139627A (en) Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
DE60014994D1 (de) Verfahren und Vorrichtung zum Polieren von Halbleiterscheiben
DE60333533D1 (de) Verfahren und vorrichtung zum splitten eines halbleiter-wafers
DE602004018643D1 (de) Einrichtung und verfahren zur nassbehandlung von scheibenartigen substraten
ATE219291T1 (de) Verfahren und vorrichtung zum trocknen von substraten
DE60103701D1 (de) Verfahren und Vorrichtung zum schleifen von Halbleiterscheiben
DE60219540D1 (de) Verfahren und Vorrichtung zum Planarisieren einer Halbleiterscheibe
ATE431963T1 (de) Vorrichtung und verfahren zur oberflächenbehandlung von substraten
TW200520139A (en) Method and apparatus for joining adhesive tape to back face of semiconductor wafer
DE60321734D1 (de) Verfahren zur Herstellung eines aus halbleitendem Siliziumkarbid-auf-Isolator Substrates (SOI) und Vorrichtung zur Durchführung des Verfahrens
ATE205636T1 (de) Verfahren zum rauhätzen einer halbleiter- oberfläche
DE60300151D1 (de) Verfahren und Vorrichtung zum Zuführen von Prozessflüssigkeit zu einer Werkzeugmaschine
ATE365375T1 (de) Verfahren und apparat zum trocknen von halbleiterscheibenoberflächen mittels einer vielzahl von ein- und auslässen in der nähe der scheibenoberfläche
DE60219503D1 (de) Verfahren und vorrichtung zur vermeidung von kreuz-kontamination zwischen flüssigkeitsdüsen inoberflächennähe
TW200509290A (en) Cleaning and drying apparatus for substrate holder chuck and method thereof
DE50207784D1 (de) Vorrichtung und Verfahren zum gerichteten Aufbringen von Depositionsmaterial auf ein Substrat
DE10328845B4 (de) Verfahren zur Oberflächenbehandlung einer Halbleiterscheibe
ATE285327T1 (de) Verfahren und vorrichtung eines druckwerkzeugs
DE50308805D1 (de) Vorrichtung zum abholen von ic"s von einem wafer