ATE73964T1 - Duennschicht-feldeffekttransistor mit kurzem kanal und verfahren zu seiner herstellung. - Google Patents
Duennschicht-feldeffekttransistor mit kurzem kanal und verfahren zu seiner herstellung.Info
- Publication number
- ATE73964T1 ATE73964T1 AT84112205T AT84112205T ATE73964T1 AT E73964 T1 ATE73964 T1 AT E73964T1 AT 84112205 T AT84112205 T AT 84112205T AT 84112205 T AT84112205 T AT 84112205T AT E73964 T1 ATE73964 T1 AT E73964T1
- Authority
- AT
- Austria
- Prior art keywords
- thin film
- field effect
- effect transistor
- manufacture
- channel field
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6743—Silicon
- H10D30/6746—Amorphous silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
- H10P76/4088—Processes for improving the resolution of the masks
Landscapes
- Thin Film Transistor (AREA)
- Weting (AREA)
- Junction Field-Effect Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/557,773 US4654295A (en) | 1983-12-05 | 1983-12-05 | Method of making short channel thin film field effect transistor |
| EP84112205A EP0151224B1 (de) | 1983-12-05 | 1984-10-11 | Dünnschicht-Feldeffekttransistor mit kurzem Kanal und Verfahren zu seiner Herstellung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE73964T1 true ATE73964T1 (de) | 1992-04-15 |
Family
ID=24226830
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT84112205T ATE73964T1 (de) | 1983-12-05 | 1984-10-11 | Duennschicht-feldeffekttransistor mit kurzem kanal und verfahren zu seiner herstellung. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4654295A (de) |
| EP (1) | EP0151224B1 (de) |
| JP (1) | JPS60144973A (de) |
| AT (1) | ATE73964T1 (de) |
| CA (1) | CA1233571A (de) |
| DE (1) | DE3485599D1 (de) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60164364A (ja) * | 1984-02-07 | 1985-08-27 | Seiko Instr & Electronics Ltd | 薄膜半導体装置の製造方法 |
| US5063168A (en) * | 1986-07-02 | 1991-11-05 | National Semiconductor Corporation | Process for making bipolar transistor with polysilicon stringer base contact |
| US4974046A (en) * | 1986-07-02 | 1990-11-27 | National Seimconductor Corporation | Bipolar transistor with polysilicon stringer base contact |
| JP3255942B2 (ja) * | 1991-06-19 | 2002-02-12 | 株式会社半導体エネルギー研究所 | 逆スタガ薄膜トランジスタの作製方法 |
| US5294520A (en) * | 1992-08-25 | 1994-03-15 | International Business Machines Corporation | Zero undercut etch process |
| US5780922A (en) * | 1996-11-27 | 1998-07-14 | The Regents Of The University Of California | Ultra-low phase noise GE MOSFETs |
| US6362097B1 (en) | 1998-07-14 | 2002-03-26 | Applied Komatsu Technlology, Inc. | Collimated sputtering of semiconductor and other films |
| US6268621B1 (en) | 1999-08-03 | 2001-07-31 | International Business Machines Corporation | Vertical channel field effect transistor |
| US6991987B1 (en) * | 2002-11-27 | 2006-01-31 | Advanced Micro Devices, Inc. | Method for producing a low defect homogeneous oxynitride |
| JP3908213B2 (ja) * | 2003-09-30 | 2007-04-25 | 富士通株式会社 | レジストパターンの形成方法及び半導体装置の製造方法 |
| WO2007142603A1 (en) * | 2006-06-09 | 2007-12-13 | Agency For Science, Technology And Research | An integrated shadow mask and method of fabrication thereof |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB967002A (en) * | 1961-05-05 | 1964-08-19 | Standard Telephones Cables Ltd | Improvements in or relating to semiconductor devices |
| US3669661A (en) * | 1970-03-06 | 1972-06-13 | Westinghouse Electric Corp | Method of producing thin film transistors |
| US3849136A (en) * | 1973-07-31 | 1974-11-19 | Ibm | Masking of deposited thin films by use of a masking layer photoresist composite |
| DE2432719B2 (de) * | 1974-07-08 | 1977-06-02 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum erzeugen von feinen strukturen aus aufdampfbaren materialien auf einer unterlage und anwendung des verfahrens |
| US4067724A (en) * | 1975-09-13 | 1978-01-10 | Bayer Aktiengesellschaft | N-(1,2,4-Triazin-5-on-4-yl)-glycines and herbicidal compositions |
| US4265934A (en) * | 1975-12-12 | 1981-05-05 | Hughes Aircraft Company | Method for making improved Schottky-barrier gate gallium arsenide field effect devices |
| US4045594A (en) * | 1975-12-31 | 1977-08-30 | Ibm Corporation | Planar insulation of conductive patterns by chemical vapor deposition and sputtering |
| JPS53104185A (en) * | 1977-02-23 | 1978-09-11 | Hitachi Ltd | Production of semiconductor device |
| US4212935A (en) * | 1978-02-24 | 1980-07-15 | International Business Machines Corporation | Method of modifying the development profile of photoresists |
| US4293624A (en) * | 1979-06-26 | 1981-10-06 | The Perkin-Elmer Corporation | Method for making a mask useful in X-ray lithography |
| JPS5648151A (en) * | 1979-09-26 | 1981-05-01 | Nec Corp | Wiring formation of semiconductor device |
| JPS5669835A (en) * | 1979-11-09 | 1981-06-11 | Japan Electronic Ind Dev Assoc<Jeida> | Method for forming thin film pattern |
| US4389481A (en) * | 1980-06-02 | 1983-06-21 | Xerox Corporation | Method of making planar thin film transistors, transistor arrays |
| JPS5744143A (en) * | 1980-08-29 | 1982-03-12 | Tokyo Ohka Kogyo Co Ltd | Composition and method for forming micropattern |
| US4376672A (en) * | 1981-10-26 | 1983-03-15 | Applied Materials, Inc. | Materials and methods for plasma etching of oxides and nitrides of silicon |
| US4409262A (en) * | 1982-02-01 | 1983-10-11 | The United States Of America As Represented By The Secretary Of The Navy | Fabrication of submicron-wide lines with shadow depositions |
| JPS58148458A (ja) * | 1982-03-01 | 1983-09-03 | Stanley Electric Co Ltd | 薄膜トランジスタ |
| JPS58170067A (ja) * | 1982-03-31 | 1983-10-06 | Fujitsu Ltd | 薄膜トランジスタの製造方法 |
-
1983
- 1983-12-05 US US06/557,773 patent/US4654295A/en not_active Expired - Lifetime
-
1984
- 1984-10-11 AT AT84112205T patent/ATE73964T1/de not_active IP Right Cessation
- 1984-10-11 DE DE8484112205T patent/DE3485599D1/de not_active Expired - Fee Related
- 1984-10-11 CA CA000465170A patent/CA1233571A/en not_active Expired
- 1984-10-11 EP EP84112205A patent/EP0151224B1/de not_active Expired - Lifetime
- 1984-12-05 JP JP59257263A patent/JPS60144973A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60144973A (ja) | 1985-07-31 |
| EP0151224B1 (de) | 1992-03-18 |
| EP0151224A2 (de) | 1985-08-14 |
| DE3485599D1 (de) | 1992-04-23 |
| CA1233571A (en) | 1988-03-01 |
| US4654295A (en) | 1987-03-31 |
| EP0151224A3 (en) | 1987-04-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3782683D1 (de) | Verfahren zur herstellung eines duennfilmtransistors. | |
| DE69212383D1 (de) | Dünnfilmtransistor und Verfahren zu seiner Herstellung | |
| DE69111963D1 (de) | Dünnfilm-Transistor und Verfahren zur Herstellung. | |
| AT384805B (de) | Verfahren zur herstellung von neuen 1,2-diaminocyclobuten-3,4-dionen und deren salzen | |
| DE3586465D1 (de) | Ueberzugsfilm, verfahren und vorrichtung zur herstellung dieses filmes. | |
| DE3682021D1 (de) | Polysilizium-mos-transistor und verfahren zu seiner herstellung. | |
| DE3752301D1 (de) | Verfahren zur Herstellung eines Dünnschichttransistors | |
| ATE147544T1 (de) | Verfahren zur herstellung einer dünnfilm- halbleitervorrichtung | |
| DE3685346D1 (de) | Magnetischer duenner film und verfahren zu seiner herstellung. | |
| DE69003208D1 (de) | Verfahren und gerät zum herstellen von elektrofotografischen abdrucken von fotografischen negativen. | |
| EP0602315A3 (de) | Verfahren zur Herstellung von Dünnschichttransistoren. | |
| DE69327559D1 (de) | Dünnfilm aus polysilizium und verfahren zu seiner herstellung | |
| DE3485599D1 (de) | Duennschicht-feldeffekttransistor mit kurzem kanal und verfahren zu seiner herstellung. | |
| DE69009783D1 (de) | Durchlicht-Projektionsschirm und Verfahren zu seiner Herstellung. | |
| DE3578845D1 (de) | Verfahren zur herstellung von duennschichtsilizium piezoresistiver geraete. | |
| DE68914361D1 (de) | Mehrzahl von Dünnfilmfeldeffekttransistoren und Verfahren zu ihrer Herstellung. | |
| EP0076587A3 (en) | Method of forming thin film transistors | |
| DE3574740D1 (de) | Verfahren zur herstellung eines keramischen films. | |
| DE69103338D1 (de) | Verfahren zur Herstellung einer elektrolumineszenten Dünnschichtvorrichtung und Apparat für ihre Herstellung. | |
| DE3774437D1 (de) | Spirooxazin-verbindungen, photoempfindliche materialien, die diese enthalten und verfahren zur herstellung derselben. | |
| DE3482638D1 (de) | Mos-leistungsfeldeffekttransistor und verfahren zu seiner herstellung. | |
| DE3584665D1 (de) | Geraet zur herstellung eines elektrofotographischen bildes. | |
| DE69112520D1 (de) | Supraleitende Dünnschicht-Oxydverbindung und Verfahren zu deren Herstellung. | |
| DE3381683D1 (de) | Feldeffekttransistor und verfahren zu seiner herstellung. | |
| EP0597641A3 (de) | Dünnfilmtransistor und Verfahren zur Herstellung. |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| UEP | Publication of translation of european patent specification | ||
| REN | Ceased due to non-payment of the annual fee |