ATE76113T1 - Reaktor zur oberflaechenbeschichtung oder behandlung. - Google Patents

Reaktor zur oberflaechenbeschichtung oder behandlung.

Info

Publication number
ATE76113T1
ATE76113T1 AT88907010T AT88907010T ATE76113T1 AT E76113 T1 ATE76113 T1 AT E76113T1 AT 88907010 T AT88907010 T AT 88907010T AT 88907010 T AT88907010 T AT 88907010T AT E76113 T1 ATE76113 T1 AT E76113T1
Authority
AT
Austria
Prior art keywords
pct
sec
substrates
gas phase
reaction chamber
Prior art date
Application number
AT88907010T
Other languages
English (en)
Inventor
Gilbert Barale
Jean-Claude Izard
Francois Place De L E Rizzetto
Jean-Pierre Couderc
Christian Gachen
Roland Morancho
Original Assignee
Cepica Sa
Centre Nat Rech Scient
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cepica Sa, Centre Nat Rech Scient filed Critical Cepica Sa
Application granted granted Critical
Publication of ATE76113T1 publication Critical patent/ATE76113T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Physical Vapour Deposition (AREA)
AT88907010T 1987-07-27 1988-07-20 Reaktor zur oberflaechenbeschichtung oder behandlung. ATE76113T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR8710666A FR2618799B1 (fr) 1987-07-27 1987-07-27 Reacteur de depot en phase vapeur
EP88907010A EP0371065B1 (de) 1987-07-27 1988-07-20 Reaktor zur oberflächenbeschichtung oder -behandlung
PCT/FR1988/000372 WO1989001054A1 (fr) 1987-07-27 1988-07-20 Reacteur de depot ou traitement de surface

Publications (1)

Publication Number Publication Date
ATE76113T1 true ATE76113T1 (de) 1992-05-15

Family

ID=9353633

Family Applications (1)

Application Number Title Priority Date Filing Date
AT88907010T ATE76113T1 (de) 1987-07-27 1988-07-20 Reaktor zur oberflaechenbeschichtung oder behandlung.

Country Status (8)

Country Link
US (1) US5125359A (de)
EP (1) EP0371065B1 (de)
JP (1) JPH02504290A (de)
AT (1) ATE76113T1 (de)
CA (1) CA1310822C (de)
DE (1) DE3871148D1 (de)
FR (1) FR2618799B1 (de)
WO (1) WO1989001054A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0677326A4 (de) * 1992-12-28 1996-08-28 Kao Corp Methode zur herstellung von feinen keramischem teilchen und vorrichtung dazu.
CH687258A5 (de) * 1993-04-22 1996-10-31 Balzers Hochvakuum Gaseinlassanordnung.
JP3471100B2 (ja) * 1994-11-07 2003-11-25 東京エレクトロン株式会社 縦型熱処理装置
US6030661A (en) * 1995-08-04 2000-02-29 Abb Research Ltd. Device and a method for epitaxially growing objects by CVD
US5883364A (en) * 1996-08-26 1999-03-16 Frei; Rob A. Clean room heating jacket and grounded heating element therefor
JP4059549B2 (ja) * 1997-09-20 2008-03-12 キヤノンアネルバ株式会社 基板支持装置
JP2010177653A (ja) * 2009-02-02 2010-08-12 Koyo Thermo System Kk 縦型炉装置
KR101062462B1 (ko) * 2009-07-28 2011-09-05 엘아이지에이디피 주식회사 샤워헤드 및 이를 포함하는 화학기상증착장치
US8338210B2 (en) * 2010-06-14 2012-12-25 Asm International N.V. Method for processing solar cell substrates
US10504719B2 (en) * 2012-04-25 2019-12-10 Applied Materials, Inc. Cooled reflective adapter plate for a deposition chamber
FR3095213B1 (fr) * 2019-04-19 2022-12-23 Safran Ceram Installation de densification CVI
CN117926212B (zh) * 2024-03-10 2025-10-31 杭州龙圣外延科技有限公司 分区加热的mocvd设备

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3460510A (en) * 1966-05-12 1969-08-12 Dow Corning Large volume semiconductor coating reactor
US3796182A (en) * 1971-12-16 1974-03-12 Applied Materials Tech Susceptor structure for chemical vapor deposition reactor
JPS58128728A (ja) * 1982-01-28 1983-08-01 Toshiba Mach Co Ltd 半導体気相成長装置
US4545327A (en) * 1982-08-27 1985-10-08 Anicon, Inc. Chemical vapor deposition apparatus
US4566839A (en) * 1983-05-18 1986-01-28 Microglass, Inc. Semiconductor wafer diffusion boat and method
US4539933A (en) * 1983-08-31 1985-09-10 Anicon, Inc. Chemical vapor deposition apparatus
US4524719A (en) * 1983-09-06 1985-06-25 Anicon, Inc. Substrate loading means for a chemical vapor deposition apparatus
US4484538A (en) * 1983-11-16 1984-11-27 Btu Engineering Corporation Apparatus for providing depletion-free uniform thickness CVD thin-film on semiconductor wafers
US4579080A (en) * 1983-12-09 1986-04-01 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition
JPS60184679A (ja) * 1984-03-01 1985-09-20 Nippon Telegr & Teleph Corp <Ntt> 多層薄膜形成法及びそれに用いる装置
US4615294A (en) * 1984-07-31 1986-10-07 Hughes Aircraft Company Barrel reactor and method for photochemical vapor deposition
EP0178200A1 (de) * 1984-09-10 1986-04-16 FAIRCHILD CAMERA &amp; INSTRUMENT CORPORATION Verfahren zum Steuern eines chemischen Dampfniederschlags
US4612207A (en) * 1985-01-14 1986-09-16 Xerox Corporation Apparatus and process for the fabrication of large area thin film multilayers
US4926793A (en) * 1986-12-15 1990-05-22 Shin-Etsu Handotai Co., Ltd. Method of forming thin film and apparatus therefor
US4823735A (en) * 1987-05-12 1989-04-25 Gemini Research, Inc. Reflector apparatus for chemical vapor deposition reactors

Also Published As

Publication number Publication date
FR2618799A1 (fr) 1989-02-03
EP0371065A1 (de) 1990-06-06
DE3871148D1 (de) 1992-06-17
WO1989001054A1 (fr) 1989-02-09
EP0371065B1 (de) 1992-05-13
JPH02504290A (ja) 1990-12-06
CA1310822C (fr) 1992-12-01
US5125359A (en) 1992-06-30
FR2618799B1 (fr) 1989-12-29

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee