JPS551130A - Furnace core pipe for manufacturing semiconductor - Google Patents

Furnace core pipe for manufacturing semiconductor

Info

Publication number
JPS551130A
JPS551130A JP7387878A JP7387878A JPS551130A JP S551130 A JPS551130 A JP S551130A JP 7387878 A JP7387878 A JP 7387878A JP 7387878 A JP7387878 A JP 7387878A JP S551130 A JPS551130 A JP S551130A
Authority
JP
Japan
Prior art keywords
furnace core
core pipe
pipe
wafers
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7387878A
Other languages
Japanese (ja)
Inventor
Yukio Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP7387878A priority Critical patent/JPS551130A/en
Publication of JPS551130A publication Critical patent/JPS551130A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To make uniform oxide films on wafersin a furnace core pipe, by laying a gas inlet tube over the furnace core pipe and opening a plurality of gas inlet ports into the central part of the pipe.
CONSTITUTION: A gas is supplied to the inlet tube 14 through a filter 13. The inlet ports 15 are opened at a uniform spacing into the central part of the furnace core pipe 11. A wafer rest is inserted into the central part of the pipe 11 through its opening 17. The gas containing O2 is introduced into the pipe 11 while the wafers are heated by a heater 12. The gas comes into uniform contact with the wafers on the rest. Since heat is radiated to the opengins 16, 17 of the furnace core pipe 11, the wafers are uniformly heated. Therefore, all the wafers are oxidized under the same condition and the uniform oxide films are produced.
COPYRIGHT: (C)1980,JPO&Japio
JP7387878A 1978-06-19 1978-06-19 Furnace core pipe for manufacturing semiconductor Pending JPS551130A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7387878A JPS551130A (en) 1978-06-19 1978-06-19 Furnace core pipe for manufacturing semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7387878A JPS551130A (en) 1978-06-19 1978-06-19 Furnace core pipe for manufacturing semiconductor

Publications (1)

Publication Number Publication Date
JPS551130A true JPS551130A (en) 1980-01-07

Family

ID=13530890

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7387878A Pending JPS551130A (en) 1978-06-19 1978-06-19 Furnace core pipe for manufacturing semiconductor

Country Status (1)

Country Link
JP (1) JPS551130A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60216912A (en) * 1984-04-12 1985-10-30 Toshiba Corp Method for detecting tension of rolling material
JPS6370143U (en) * 1986-10-27 1988-05-11
JPH0621000U (en) * 1992-06-02 1994-03-18 麗子 伊藤 Display for gas container

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60216912A (en) * 1984-04-12 1985-10-30 Toshiba Corp Method for detecting tension of rolling material
JPS6370143U (en) * 1986-10-27 1988-05-11
JPH0621000U (en) * 1992-06-02 1994-03-18 麗子 伊藤 Display for gas container

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