ATE78628T1 - Nichtfluechtiger speicher. - Google Patents

Nichtfluechtiger speicher.

Info

Publication number
ATE78628T1
ATE78628T1 AT86402196T AT86402196T ATE78628T1 AT E78628 T1 ATE78628 T1 AT E78628T1 AT 86402196 T AT86402196 T AT 86402196T AT 86402196 T AT86402196 T AT 86402196T AT E78628 T1 ATE78628 T1 AT E78628T1
Authority
AT
Austria
Prior art keywords
tunnel oxide
volatile memory
fowler
acceptability
compensate
Prior art date
Application number
AT86402196T
Other languages
English (en)
Inventor
Horst Leuschner
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Application granted granted Critical
Publication of ATE78628T1 publication Critical patent/ATE78628T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits

Landscapes

  • Read Only Memory (AREA)
  • Agricultural Chemicals And Associated Chemicals (AREA)
  • Medicines Containing Material From Animals Or Micro-Organisms (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
AT86402196T 1985-10-03 1986-10-03 Nichtfluechtiger speicher. ATE78628T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/783,493 US4685083A (en) 1985-10-03 1985-10-03 Improved nonvolatile memory circuit using a dual node floating gate memory cell
EP86402196A EP0217718B1 (de) 1985-10-03 1986-10-03 Nichtflüchtiger Speicher

Publications (1)

Publication Number Publication Date
ATE78628T1 true ATE78628T1 (de) 1992-08-15

Family

ID=25129433

Family Applications (1)

Application Number Title Priority Date Filing Date
AT86402196T ATE78628T1 (de) 1985-10-03 1986-10-03 Nichtfluechtiger speicher.

Country Status (6)

Country Link
US (1) US4685083A (de)
EP (1) EP0217718B1 (de)
JP (1) JPH0740436B2 (de)
KR (1) KR940011637B1 (de)
AT (1) ATE78628T1 (de)
DE (1) DE3686118T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4780750A (en) * 1986-01-03 1988-10-25 Sierra Semiconductor Corporation Electrically alterable non-volatile memory device
JPS6414798A (en) * 1987-07-09 1989-01-18 Fujitsu Ltd Non-volatile memory device
US4802124A (en) * 1987-08-03 1989-01-31 Sgs-Thomson Microelectronics, Inc. Non-volatile shadow storage cell with reduced tunnel device count for improved reliability
US4787066A (en) * 1987-08-03 1988-11-22 Sgs-Thomson Microelectronics, Inc. Non-volatile shadow storage cell with improved level shifting circuit and reduced tunnel device count for improved reliability
US5042009A (en) * 1988-12-09 1991-08-20 Waferscale Integration, Inc. Method for programming a floating gate memory device
US4980859A (en) * 1989-04-07 1990-12-25 Xicor, Inc. NOVRAM cell using two differential decouplable nonvolatile memory elements
US5128895A (en) * 1989-11-21 1992-07-07 Intel Corporation Method for programming a virtual ground EPROM cell including slow ramping of the column line voltage
FR2655761B1 (fr) * 1989-12-07 1992-12-31 Sgs Thomson Microelectronics Circuit de generation de tension de programmation pour memoire programmable.
US5175706A (en) * 1989-12-07 1992-12-29 Sgs-Thomson Microelectronics S.A. Programming voltage generator circuit for programmable memory
US5097449A (en) * 1990-03-15 1992-03-17 Vlsi Technology, Inc. Non-volatile memory structure
FR2663147A1 (fr) * 1990-06-12 1991-12-13 Sgs Thomson Microelectronics Memoire programmable a double transistor a grille flottante.
US5481492A (en) * 1994-12-14 1996-01-02 The United States Of America As Represented By The Secretary Of The Navy Floating gate injection voltage regulator
JP3569728B2 (ja) * 1995-01-11 2004-09-29 直 柴田 不揮発性半導体メモリ装置
US5940291A (en) * 1997-05-08 1999-08-17 Lucent Technologies Inc. Low-complexity adaptive controller
US6055186A (en) * 1998-10-23 2000-04-25 Macronix International Co., Ltd. Regulated negative voltage supply circuit for floating gate memory devices
JP3910765B2 (ja) * 1999-09-08 2007-04-25 株式会社東芝 電圧発生回路及びこれを用いた電圧転送回路
KR100610490B1 (ko) * 2005-06-17 2006-08-08 매그나칩 반도체 유한회사 Ｅｅｐｒｏｍ 셀 및 ｅｅｐｒｏｍ 블록
US7365585B2 (en) * 2006-08-09 2008-04-29 Atmel Corporation Apparatus and method for charge pump slew rate control
KR102670947B1 (ko) * 2018-08-17 2024-06-03 에스케이하이닉스 주식회사 반도체 메모리 장치, 이를 포함하는 반도체 시스템 및 전자 장치

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2828855C2 (de) * 1978-06-30 1982-11-18 Siemens AG, 1000 Berlin und 8000 München Wortweise elektrisch umprogrammierbarer, nichtflüchtiger Speicher sowie Verfahren zum Löschen bzw. Einschreiben eines bzw. in einen solchen Speicher(s)
US4393481A (en) * 1979-08-31 1983-07-12 Xicor, Inc. Nonvolatile static random access memory system
US4404475A (en) * 1981-04-08 1983-09-13 Xicor, Inc. Integrated circuit high voltage pulse generator system
US4408303A (en) * 1981-12-28 1983-10-04 Mostek Corporation Directly-coupled and capacitively coupled nonvolatile static RAM cell
US4510584A (en) * 1982-12-29 1985-04-09 Mostek Corporation MOS Random access memory cell with nonvolatile storage
US4638464A (en) * 1983-11-14 1987-01-20 International Business Machines Corp. Charge pump system for non-volatile ram

Also Published As

Publication number Publication date
EP0217718A3 (en) 1990-05-02
DE3686118D1 (de) 1992-08-27
DE3686118T2 (de) 1992-12-17
JPH0740436B2 (ja) 1995-05-01
JPS6297199A (ja) 1987-05-06
EP0217718A2 (de) 1987-04-08
EP0217718B1 (de) 1992-07-22
US4685083A (en) 1987-08-04
KR940011637B1 (ko) 1994-12-22
KR870004453A (ko) 1987-05-09

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties