ATE79981T1 - Verfahren zur herstellung einer niedergeschlagenen schicht. - Google Patents

Verfahren zur herstellung einer niedergeschlagenen schicht.

Info

Publication number
ATE79981T1
ATE79981T1 AT86309996T AT86309996T ATE79981T1 AT E79981 T1 ATE79981 T1 AT E79981T1 AT 86309996 T AT86309996 T AT 86309996T AT 86309996 T AT86309996 T AT 86309996T AT E79981 T1 ATE79981 T1 AT E79981T1
Authority
AT
Austria
Prior art keywords
deposited film
space
gaseous
introducing
formation
Prior art date
Application number
AT86309996T
Other languages
English (en)
Inventor
Keishi Saitoh
Masaaki Hirooka
Jun-Ichi Hanna
Isamu Shimizu
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE79981T1 publication Critical patent/ATE79981T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2923—Materials being conductive materials, e.g. metallic silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
AT86309996T 1985-12-25 1986-12-22 Verfahren zur herstellung einer niedergeschlagenen schicht. ATE79981T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60295303A JPH0647730B2 (ja) 1985-12-25 1985-12-25 堆積膜形成法
EP86309996A EP0229518B1 (de) 1985-12-25 1986-12-22 Verfahren zur Herstellung einer niedergeschlagenen Schicht

Publications (1)

Publication Number Publication Date
ATE79981T1 true ATE79981T1 (de) 1992-09-15

Family

ID=17818858

Family Applications (1)

Application Number Title Priority Date Filing Date
AT86309996T ATE79981T1 (de) 1985-12-25 1986-12-22 Verfahren zur herstellung einer niedergeschlagenen schicht.

Country Status (10)

Country Link
US (1) US4812328A (de)
EP (1) EP0229518B1 (de)
JP (1) JPH0647730B2 (de)
CN (1) CN1015009B (de)
AT (1) ATE79981T1 (de)
AU (1) AU602321B2 (de)
CA (1) CA1293162C (de)
DE (1) DE3686571T2 (de)
ES (1) ES2034964T3 (de)
GR (1) GR3005965T3 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0651906B2 (ja) * 1985-12-25 1994-07-06 キヤノン株式会社 堆積膜形成法
JP2662396B2 (ja) * 1986-03-31 1997-10-08 キヤノン株式会社 結晶性堆積膜の形成方法
JP2914992B2 (ja) * 1989-03-31 1999-07-05 キヤノン株式会社 堆積膜形成方法
US6893906B2 (en) * 1990-11-26 2005-05-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
TW209895B (de) 1990-11-26 1993-07-21 Semiconductor Energy Res Co Ltd
JP3073327B2 (ja) * 1992-06-30 2000-08-07 キヤノン株式会社 堆積膜形成方法
CN1274009C (zh) 1994-06-15 2006-09-06 精工爱普生株式会社 薄膜半导体器件的制造方法
DE19702581B4 (de) * 1996-02-08 2008-05-08 Volkswagen Ag Innenverkleidungselement für die Karosserie eines Kraftfahrzeugs und Verfahren zur Herstellung
JP2014144875A (ja) * 2011-05-24 2014-08-14 National Institute Of Advanced Industrial & Technology 半導体薄膜結晶の製造方法および装置
US10192717B2 (en) * 2014-07-21 2019-01-29 Applied Materials, Inc. Conditioning remote plasma source for enhanced performance having repeatable etch and deposition rates
CN114293173B (zh) * 2021-12-17 2024-02-09 厦门钨业股份有限公司 一种碳掺杂化学气相沉积钨涂层的装置

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US31708A (en) * 1861-03-19 Improved device for coating pins
US3473978A (en) * 1967-04-24 1969-10-21 Motorola Inc Epitaxial growth of germanium
US3888705A (en) * 1973-12-19 1975-06-10 Nasa Vapor phase growth of groups iii-v compounds by hydrogen chloride transport of the elements
US4146657A (en) * 1976-11-01 1979-03-27 Gordon Roy G Method of depositing electrically conductive, infra-red reflective, transparent coatings of stannic oxide
USRE31708E (en) 1976-11-01 1984-10-16 Method of depositing electrically conductive, infra-red reflective, transparent coatings of stannic oxide
GB2038086A (en) * 1978-12-19 1980-07-16 Standard Telephones Cables Ltd Amorphous semiconductor devices
US4239811A (en) * 1979-08-16 1980-12-16 International Business Machines Corporation Low pressure chemical vapor deposition of silicon dioxide with oxygen enhancement of the chlorosilane-nitrous oxide reaction
JPS5710920A (en) * 1980-06-23 1982-01-20 Canon Inc Film forming process
SE451353B (sv) * 1980-09-09 1987-09-28 Energy Conversion Devices Inc Fotokensligt, amorft flercellsdon
US4522663A (en) * 1980-09-09 1985-06-11 Sovonics Solar Systems Method for optimizing photoresponsive amorphous alloys and devices
JPS5767938A (en) * 1980-10-16 1982-04-24 Canon Inc Production of photoconductive member
US4357179A (en) * 1980-12-23 1982-11-02 Bell Telephone Laboratories, Incorporated Method for producing devices comprising high density amorphous silicon or germanium layers by low pressure CVD technique
US4421592A (en) * 1981-05-22 1983-12-20 United Technologies Corporation Plasma enhanced deposition of semiconductors
US4402762A (en) * 1981-06-02 1983-09-06 John Puthenveetil K Method of making highly stable modified amorphous silicon and germanium films
JPS5833829A (ja) * 1981-08-24 1983-02-28 Toshiba Corp 薄膜形成装置
US4652463A (en) * 1982-03-29 1987-03-24 Hughes Aircraft Process for depositing a conductive oxide layer
JPS58170536A (ja) * 1982-03-31 1983-10-07 Fujitsu Ltd プラズマ処理方法及びその装置
US4462847A (en) * 1982-06-21 1984-07-31 Texas Instruments Incorporated Fabrication of dielectrically isolated microelectronic semiconductor circuits utilizing selective growth by low pressure vapor deposition
US4615905A (en) * 1982-09-24 1986-10-07 Sovonics Solar Systems, Inc. Method of depositing semiconductor films by free radical generation
US4504518A (en) * 1982-09-24 1985-03-12 Energy Conversion Devices, Inc. Method of making amorphous semiconductor alloys and devices using microwave energy
US4517223A (en) * 1982-09-24 1985-05-14 Sovonics Solar Systems Method of making amorphous semiconductor alloys and devices using microwave energy
JPS59159167A (ja) * 1983-03-01 1984-09-08 Zenko Hirose アモルフアスシリコン膜の形成方法
JPS59199035A (ja) * 1983-04-26 1984-11-12 Fuji Electric Corp Res & Dev Ltd 薄膜生成装置
JPS6026664A (ja) * 1983-07-22 1985-02-09 Canon Inc アモルフアスシリコン堆積膜形成法
DE3429899A1 (de) * 1983-08-16 1985-03-07 Canon K.K., Tokio/Tokyo Verfahren zur bildung eines abscheidungsfilms
US4637938A (en) * 1983-08-19 1987-01-20 Energy Conversion Devices, Inc. Methods of using selective optical excitation in deposition processes and the detection of new compositions
US4546008A (en) * 1983-11-07 1985-10-08 Canon Kabushiki Kaisha Method for forming a deposition film
US4645689A (en) * 1984-02-17 1987-02-24 At&T Bell Laboratories Deposition technique
JPS60243663A (ja) * 1984-05-18 1985-12-03 Kyocera Corp 電子写真感光体
US4624736A (en) * 1984-07-24 1986-11-25 The United States Of America As Represented By The United States Department Of Energy Laser/plasma chemical processing of substrates
US4657777A (en) * 1984-12-17 1987-04-14 Canon Kabushiki Kaisha Formation of deposited film
JPH07101751B2 (ja) * 1985-03-28 1995-11-01 キヤノン株式会社 光起電力素子の製造方法
JPH0746729B2 (ja) * 1985-12-26 1995-05-17 キヤノン株式会社 薄膜トランジスタの製造方法
JP2566914B2 (ja) * 1985-12-28 1996-12-25 キヤノン株式会社 薄膜半導体素子及びその形成法
JP3224040B2 (ja) * 1992-07-24 2001-10-29 日本カーバイド工業株式会社 視認性のよい再帰反射シート

Also Published As

Publication number Publication date
EP0229518A3 (en) 1988-04-06
CA1293162C (en) 1991-12-17
DE3686571T2 (de) 1992-12-24
JPH0647730B2 (ja) 1994-06-22
US4812328A (en) 1989-03-14
GR3005965T3 (de) 1993-06-07
EP0229518A2 (de) 1987-07-22
AU602321B2 (en) 1990-10-11
CN86108874A (zh) 1987-09-09
JPS62151573A (ja) 1987-07-06
EP0229518B1 (de) 1992-08-26
CN1015009B (zh) 1991-12-04
AU6696186A (en) 1987-07-02
DE3686571D1 (de) 1992-10-01
ES2034964T3 (es) 1993-04-16

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
EELA Cancelled due to lapse of time