ATE87768T1 - Herstellungsverfahren fuer eine ueberdeckungsschicht. - Google Patents
Herstellungsverfahren fuer eine ueberdeckungsschicht.Info
- Publication number
- ATE87768T1 ATE87768T1 AT88301331T AT88301331T ATE87768T1 AT E87768 T1 ATE87768 T1 AT E87768T1 AT 88301331 T AT88301331 T AT 88301331T AT 88301331 T AT88301331 T AT 88301331T AT E87768 T1 ATE87768 T1 AT E87768T1
- Authority
- AT
- Austria
- Prior art keywords
- capping layer
- mask
- manufacturing process
- covering layer
- selective removal
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
- H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Light Receiving Elements (AREA)
- Laminated Bodies (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB878703592A GB8703592D0 (en) | 1987-02-17 | 1987-02-17 | Capping layer fabrication |
| EP88301331A EP0279651B1 (de) | 1987-02-17 | 1988-02-17 | Herstellungsverfahren für eine Überdeckungsschicht |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE87768T1 true ATE87768T1 (de) | 1993-04-15 |
Family
ID=10612414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT88301331T ATE87768T1 (de) | 1987-02-17 | 1988-02-17 | Herstellungsverfahren fuer eine ueberdeckungsschicht. |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US5144396A (de) |
| EP (1) | EP0279651B1 (de) |
| JP (1) | JPH01503664A (de) |
| AT (1) | ATE87768T1 (de) |
| CA (1) | CA1314110C (de) |
| DE (1) | DE3879730T2 (de) |
| ES (1) | ES2039612T3 (de) |
| GB (1) | GB8703592D0 (de) |
| WO (1) | WO1988006350A1 (de) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0404987A1 (de) * | 1989-06-29 | 1991-01-02 | Siemens Aktiengesellschaft | Ohmscher Kontakt für eine p-leitende Schicht eines InP-Substrates von Fotodioden und Verfahren zu dessen Herstellung |
| US5542018A (en) * | 1990-08-31 | 1996-07-30 | Kuhara; Yoshiki | Semiconductor laser device making use of photodiode chip |
| JPH04216682A (ja) * | 1990-12-18 | 1992-08-06 | Sumitomo Electric Ind Ltd | 受光素子 |
| JP4221818B2 (ja) * | 1999-05-28 | 2009-02-12 | 沖電気工業株式会社 | 光半導体素子の製造方法 |
| DE10104015A1 (de) * | 2001-01-31 | 2002-08-01 | Bosch Gmbh Robert | Optischer Detektor und Verfahren zum Herstellen einer Anordnung mehrerer Halbleiterschichten |
| WO2009075880A2 (en) * | 2007-12-12 | 2009-06-18 | Newport Corporation | Improved performance optically coated semiconductor devices and related methods of manufacture |
| JP5876047B2 (ja) | 2010-07-19 | 2016-03-02 | テルモ ビーシーティー、インコーポレーテッド | 血液及び血液成分を処理するための遠心分離器 |
| WO2017098769A1 (ja) | 2015-12-11 | 2017-06-15 | ソニー株式会社 | 受光素子、受光素子の製造方法、撮像素子および電子機器 |
| CN112510062B (zh) * | 2020-11-27 | 2022-08-16 | 电子科技大学 | 一种上转换器件红外复合波长成像系统及其搭建测试方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2501915A1 (fr) * | 1981-03-10 | 1982-09-17 | Telecommunications Sa | Photodetecteur sensible dans l'infra-rouge proche |
| CA1182198A (en) * | 1981-09-16 | 1985-02-05 | Paul P. Webb | Si photodiode and a method of making same |
| JPS60110177A (ja) * | 1983-11-18 | 1985-06-15 | Fujitsu Ltd | 半導体受光装置の製造方法 |
| US4608586A (en) * | 1984-05-11 | 1986-08-26 | At&T Bell Laboratories | Back-illuminated photodiode with a wide bandgap cap layer |
| JPS61172381A (ja) * | 1984-12-22 | 1986-08-04 | Fujitsu Ltd | ＩｎＰ系化合物半導体装置 |
| US4624004A (en) * | 1985-07-15 | 1986-11-18 | Eaton Corporation | Buried channel MESFET with backside source contact |
-
1987
- 1987-02-17 GB GB878703592A patent/GB8703592D0/en active Pending
-
1988
- 1988-02-17 ES ES198888301331T patent/ES2039612T3/es not_active Expired - Lifetime
- 1988-02-17 JP JP63501663A patent/JPH01503664A/ja active Pending
- 1988-02-17 CA CA000559102A patent/CA1314110C/en not_active Expired - Fee Related
- 1988-02-17 AT AT88301331T patent/ATE87768T1/de not_active IP Right Cessation
- 1988-02-17 EP EP88301331A patent/EP0279651B1/de not_active Expired - Lifetime
- 1988-02-17 DE DE8888301331T patent/DE3879730T2/de not_active Expired - Fee Related
- 1988-02-17 WO PCT/GB1988/000100 patent/WO1988006350A1/en not_active Ceased
-
1989
- 1989-12-04 US US07/445,146 patent/US5144396A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| WO1988006350A1 (en) | 1988-08-25 |
| DE3879730D1 (de) | 1993-05-06 |
| CA1314110C (en) | 1993-03-02 |
| EP0279651B1 (de) | 1993-03-31 |
| ES2039612T3 (es) | 1993-10-01 |
| GB8703592D0 (en) | 1987-03-25 |
| DE3879730T2 (de) | 1993-08-19 |
| JPH01503664A (ja) | 1989-12-07 |
| US5144396A (en) | 1992-09-01 |
| EP0279651A1 (de) | 1988-08-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |