BE598004A - - Google Patents
Info
- Publication number
- BE598004A BE598004A BE598004DA BE598004A BE 598004 A BE598004 A BE 598004A BE 598004D A BE598004D A BE 598004DA BE 598004 A BE598004 A BE 598004A
- Authority
- BE
- Belgium
- Prior art keywords
- hydrogen
- gallium
- mixture
- temperature
- chlorides
- Prior art date
Links
- 239000001257 hydrogen Substances 0.000 claims description 25
- 229910052739 hydrogen Inorganic materials 0.000 claims description 25
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 20
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 20
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 20
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 20
- 229910052733 gallium Inorganic materials 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 20
- OEYOHULQRFXULB-UHFFFAOYSA-N arsenic trichloride Chemical compound Cl[As](Cl)Cl OEYOHULQRFXULB-UHFFFAOYSA-N 0.000 claims description 17
- 229910052785 arsenic Inorganic materials 0.000 claims description 16
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 16
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000012808 vapor phase Substances 0.000 claims description 10
- 150000001805 chlorine compounds Chemical class 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 2
- 230000005494 condensation Effects 0.000 claims description 2
- 238000009833 condensation Methods 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 150000002431 hydrogen Chemical class 0.000 claims 5
- 239000007790 solid phase Substances 0.000 claims 2
- 229910021478 group 5 element Inorganic materials 0.000 claims 1
- 238000005496 tempering Methods 0.000 claims 1
- 229910017009 AsCl3 Inorganic materials 0.000 description 10
- 229910005267 GaCl3 Inorganic materials 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 150000004820 halides Chemical class 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- IHGSAQHSAGRWNI-UHFFFAOYSA-N 1-(4-bromophenyl)-2,2,2-trifluoroethanone Chemical compound FC(F)(F)C(=O)C1=CC=C(Br)C=C1 IHGSAQHSAGRWNI-UHFFFAOYSA-N 0.000 description 1
- 241000288673 Chiroptera Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- -1 arsenic halide Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000007323 disproportionation reaction Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- PUGUQINMNYINPK-UHFFFAOYSA-N tert-butyl 4-(2-chloroacetyl)piperazine-1-carboxylate Chemical compound CC(C)(C)OC(=O)N1CCN(C(=O)CCl)CC1 PUGUQINMNYINPK-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE598004A true BE598004A (de) |
Family
ID=192383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE598004D BE598004A (de) |
Country Status (1)
| Country | Link |
|---|---|
| BE (1) | BE598004A (de) |
-
0
- BE BE598004D patent/BE598004A/fr unknown
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR20220052968A (ko) | 고순도 산화주석의 증착을 위한 유기금속 화합물 및 산화주석 필름의 건조 에칭 및 증착 반응기 | |
| EP0146456B1 (de) | Verfahren zur Herstellung von Siliziumhydriden, ihre Verwendung und Vorrichtung zur Durchführung des Verfahrens | |
| FR2764280A1 (fr) | Procede pour la fabrication de carbone 60 | |
| CN102421702A (zh) | 用于制造五氟化磷的方法和反应器设计 | |
| EP0614852B1 (de) | Verfahren zur Herstellung von Disilan aus Monosilan durch elektrische Entladung und Benützung einer Kühlfalle, sowie Reaktor zu seiner Durchführung | |
| US7276121B1 (en) | Forming improved metal nitrides | |
| EP0143701A1 (de) | Verfahren zur Abscheidung von amorphem Silizium durch thermische Zersetzung bei niedriger Temperatur und Vorrichtung zur Durchführung des Verfahrens | |
| US6676752B1 (en) | Forming metal nitrides | |
| FR2735466A1 (fr) | Procede de fabrication de trichites de nitrure d'aluminium | |
| EP0362207A1 (de) | Verfahren und anlage zur thermischen ablagerung von hochfesten beschichtungen bei mässiger temperatur. | |
| EP1517855A1 (de) | Verfahren zur calciumnitridsysnthese | |
| FR2462391A1 (fr) | Procede d'elimination du phosgene contenu dans le trichlorure de bore | |
| US3094388A (en) | Method of producing gallium or aluminum arsenides and phosphides | |
| US5441013A (en) | Method for growing continuous diamond films | |
| FR2505363A1 (fr) | Procede d'extraction du magnesium d'une composition gazeuse comprenant des vapeurs de magnesium et du monoxyde de carbone | |
| FR2802535A1 (fr) | Procede de synthese directe de phosphure d'indium | |
| BE508040A (de) | ||
| BE532222A (de) | ||
| BE525596A (de) | ||
| EP0819109A1 (de) | Verfahren zur herstellung von tetrafluorethylen | |
| EP0006118A1 (de) | Verfahren für das Ablagern von Galliumarsenid mit hohem Germanium-Gehalt aus der Gasphase | |
| BE562147A (de) | ||
| FR2622052A1 (fr) | Procede de depot de siliciure de metal refractaire pour la fabrication de circuits integres | |
| JP2025540419A (ja) | 無機化合物 | |
| BE489073A (de) |