BE701300A - - Google Patents

Info

Publication number
BE701300A
BE701300A BE701300DA BE701300A BE 701300 A BE701300 A BE 701300A BE 701300D A BE701300D A BE 701300DA BE 701300 A BE701300 A BE 701300A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE701300A publication Critical patent/BE701300A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • H10D18/60Gate-turn-off devices 
    • H10D18/65Gate-turn-off devices  with turn-off by field effect 
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/037Diffusion-deposition
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/053Field effect transistors fets
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/145Shaped junctions
BE701300D 1966-07-22 1967-07-13 BE701300A (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR70448A FR1497548A (fr) 1966-07-22 1966-07-22 Dispositif semi-conducteur bistable pour courants forts

Publications (1)

Publication Number Publication Date
BE701300A true BE701300A (da) 1967-12-18

Family

ID=8613874

Family Applications (1)

Application Number Title Priority Date Filing Date
BE701300D BE701300A (da) 1966-07-22 1967-07-13

Country Status (6)

Country Link
US (1) US3465216A (da)
BE (1) BE701300A (da)
DE (1) DE1614844C3 (da)
FR (1) FR1497548A (da)
GB (1) GB1198132A (da)
NL (1) NL160681C (da)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2147883B1 (da) * 1971-08-05 1977-01-28 Teszner Stanislas
US3737741A (en) * 1971-11-22 1973-06-05 Bell Telephone Labor Inc Semiconductor devices utilizing geometrically controllable current filaments
US4011579A (en) * 1975-04-07 1977-03-08 Hutson Jearld L Semiconductor gate turn-off device
US4171995A (en) * 1975-10-20 1979-10-23 Semiconductor Research Foundation Epitaxial deposition process for producing an electrostatic induction type thyristor
US4086611A (en) * 1975-10-20 1978-04-25 Semiconductor Research Foundation Static induction type thyristor
US4037245A (en) * 1975-11-28 1977-07-19 General Electric Company Electric field controlled diode with a current controlling surface grid
JPS5291658A (en) * 1976-01-29 1977-08-02 Toshiba Corp Semiconductor device
JPS52107780A (en) * 1976-03-08 1977-09-09 Toshiba Corp Semiconductor unit
US4060821A (en) * 1976-06-21 1977-11-29 General Electric Co. Field controlled thyristor with buried grid
US4181542A (en) * 1976-10-25 1980-01-01 Nippon Gakki Seizo Kabushiki Kaisha Method of manufacturing junction field effect transistors
US4331969A (en) * 1976-11-08 1982-05-25 General Electric Company Field-controlled bipolar transistor
US4191602A (en) * 1978-04-24 1980-03-04 General Electric Company Liquid phase epitaxial method of making a high power, vertical channel field effect transistor
US4216488A (en) * 1978-07-31 1980-08-05 Hutson Jearld L Lateral semiconductor diac
JPS6046551B2 (ja) * 1978-08-07 1985-10-16 株式会社日立製作所 半導体スイツチング素子およびその製法
US4937644A (en) * 1979-11-16 1990-06-26 General Electric Company Asymmetrical field controlled thyristor
JPS5917547B2 (ja) * 1981-09-05 1984-04-21 財団法人半導体研究振興会 サイリスタ
US4466173A (en) * 1981-11-23 1984-08-21 General Electric Company Methods for fabricating vertical channel buried grid field controlled devices including field effect transistors and field controlled thyristors utilizing etch and refill techniques
CA1267965A (en) * 1985-07-26 1990-04-17 Wolodymyr Czubatyj Double injection field effect transistors
US4821095A (en) * 1987-03-12 1989-04-11 General Electric Company Insulated gate semiconductor device with extra short grid and method of fabrication
US5319240A (en) * 1993-02-03 1994-06-07 International Business Machines Corporation Three dimensional integrated device and circuit structures

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB948239A (en) * 1962-05-15 1964-01-29 Clevite Corp Method of embedding a metallic grid in a body of semiconductive material

Also Published As

Publication number Publication date
NL6709879A (da) 1968-01-23
US3465216A (en) 1969-09-02
NL160681B (nl) 1979-06-15
DE1614844B2 (de) 1978-01-12
NL160681C (nl) 1979-11-15
GB1198132A (en) 1970-07-08
DE1614844A1 (de) 1970-12-23
FR1497548A (fr) 1967-10-13
DE1614844C3 (de) 1978-09-14

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