BE742021A - - Google Patents

Info

Publication number
BE742021A
BE742021A BE742021DA BE742021A BE 742021 A BE742021 A BE 742021A BE 742021D A BE742021D A BE 742021DA BE 742021 A BE742021 A BE 742021A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE742021A publication Critical patent/BE742021A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/012—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/0124—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/064—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying
    • H10W20/066—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying by forming silicides of refractory metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/139—Schottky barrier

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
BE742021D 1968-11-22 1969-11-21 BE742021A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US77809968A 1968-11-22 1968-11-22

Publications (1)

Publication Number Publication Date
BE742021A true BE742021A (de) 1970-05-04

Family

ID=25112298

Family Applications (1)

Application Number Title Priority Date Filing Date
BE742021D BE742021A (de) 1968-11-22 1969-11-21

Country Status (8)

Country Link
US (1) US3616380A (de)
BE (1) BE742021A (de)
CH (1) CH516227A (de)
ES (1) ES374091A1 (de)
FR (1) FR2024111B1 (de)
GB (1) GB1291448A (de)
NL (1) NL6917576A (de)
SE (1) SE362734B (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3700979A (en) * 1971-04-07 1972-10-24 Rca Corp Schottky barrier diode and method of making the same
NL161305C (nl) * 1971-11-20 1980-01-15 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderin- richting.
US3855612A (en) * 1972-01-03 1974-12-17 Signetics Corp Schottky barrier diode semiconductor structure and method
GB1384028A (en) * 1972-08-21 1974-02-12 Hughes Aircraft Co Method of making a semiconductor device
US3927225A (en) * 1972-12-26 1975-12-16 Gen Electric Schottky barrier contacts and methods of making same
US3938243A (en) * 1973-02-20 1976-02-17 Signetics Corporation Schottky barrier diode semiconductor structure and method
US3906540A (en) * 1973-04-02 1975-09-16 Nat Semiconductor Corp Metal-silicide Schottky diode employing an aluminum connector
JPS5850428B2 (ja) * 1975-04-16 1983-11-10 株式会社東芝 メサ型半導体装置
FR2394894A1 (fr) * 1977-06-17 1979-01-12 Thomson Csf Dispositif de prise de contact sur un element semiconducteur
US4261095A (en) * 1978-12-11 1981-04-14 International Business Machines Corporation Self aligned schottky guard ring
USH40H (en) 1984-07-18 1986-04-01 At&T Bell Laboratories Field shields for Schottky barrier devices
US5027166A (en) * 1987-12-04 1991-06-25 Sanken Electric Co., Ltd. High voltage, high speed Schottky semiconductor device and method of fabrication
JPH0618276B2 (ja) * 1988-11-11 1994-03-09 サンケン電気株式会社 半導体装置
US5756391A (en) * 1995-03-24 1998-05-26 Kabushiki Kaisha Toshiba Anti-oxidation layer formation by carbon incorporation
US6518176B2 (en) * 1998-06-05 2003-02-11 Ted Guo Method of selective formation of a barrier layer for a contact level via
US8217473B2 (en) * 2005-07-29 2012-07-10 Hewlett-Packard Development Company, L.P. Micro electro-mechanical system packaging and interconnect

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL105600C (de) * 1956-06-16
US3290127A (en) * 1964-03-30 1966-12-06 Bell Telephone Labor Inc Barrier diode with metal contact and method of making
FR1537229A (fr) * 1966-09-01 1968-08-23 Western Electric Co Dépôt d'une pellicule isolante mince

Also Published As

Publication number Publication date
GB1291448A (en) 1972-10-04
NL6917576A (de) 1970-05-26
DE1958082A1 (de) 1970-05-27
DE1958082B2 (de) 1972-11-09
CH516227A (de) 1971-11-30
US3616380A (en) 1971-10-26
SE362734B (de) 1973-12-17
FR2024111B1 (de) 1973-12-21
ES374091A1 (es) 1971-12-01
FR2024111A1 (de) 1970-08-28

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