FR1454254A - Dispositif semiconducteur à effet de champ à porte isolée - Google Patents

Dispositif semiconducteur à effet de champ à porte isolée

Info

Publication number
FR1454254A
FR1454254A FR38732A FR38732A FR1454254A FR 1454254 A FR1454254 A FR 1454254A FR 38732 A FR38732 A FR 38732A FR 38732 A FR38732 A FR 38732A FR 1454254 A FR1454254 A FR 1454254A
Authority
FR
France
Prior art keywords
semiconductor device
field effect
insulated gate
gate field
effect semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR38732A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Application granted granted Critical
Publication of FR1454254A publication Critical patent/FR1454254A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
FR38732A 1964-11-25 1965-11-17 Dispositif semiconducteur à effet de champ à porte isolée Expired FR1454254A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US413839A US3305708A (en) 1964-11-25 1964-11-25 Insulated-gate field-effect semiconductor device

Publications (1)

Publication Number Publication Date
FR1454254A true FR1454254A (fr) 1966-07-22

Family

ID=23638869

Family Applications (1)

Application Number Title Priority Date Filing Date
FR38732A Expired FR1454254A (fr) 1964-11-25 1965-11-17 Dispositif semiconducteur à effet de champ à porte isolée

Country Status (7)

Country Link
US (1) US3305708A (fr)
DE (1) DE1514374B1 (fr)
ES (1) ES319914A1 (fr)
FR (1) FR1454254A (fr)
GB (1) GB1115944A (fr)
NL (1) NL6515237A (fr)
SE (1) SE330574B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1954639A1 (de) * 1968-10-31 1970-09-03 Nat Semiconductor Corp Vorrichtung und Verfahren zum Schutz gegen Oberflaechenumkehr

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3794892A (en) * 1965-03-16 1974-02-26 United Aircraft Corp Semiconductive encoder
US3427445A (en) * 1965-12-27 1969-02-11 Ibm Full adder using field effect transistor of the insulated gate type
GB1173150A (en) * 1966-12-13 1969-12-03 Associated Semiconductor Mft Improvements in Insulated Gate Field Effect Transistors
US3534235A (en) * 1967-04-17 1970-10-13 Hughes Aircraft Co Igfet with offset gate and biconductivity channel region
US3544864A (en) * 1967-08-31 1970-12-01 Gen Telephone & Elect Solid state field effect device
US3528168A (en) * 1967-09-26 1970-09-15 Texas Instruments Inc Method of making a semiconductor device
GB1261723A (en) * 1968-03-11 1972-01-26 Associated Semiconductor Mft Improvements in and relating to semiconductor devices
JPS4819113B1 (fr) * 1969-08-27 1973-06-11
JPS4936515B1 (fr) * 1970-06-10 1974-10-01
FR2123592A5 (fr) * 1971-01-14 1972-09-15 Commissariat Energie Atomique
US3789267A (en) * 1971-06-28 1974-01-29 Bell Telephone Labor Inc Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel
US4017883A (en) * 1971-07-06 1977-04-12 Ibm Corporation Single-electrode charge-coupled random access memory cell with impurity implanted gate region
US3881180A (en) * 1971-11-30 1975-04-29 Texas Instruments Inc Non-volatile memory cell
JPS5222480A (en) * 1975-08-14 1977-02-19 Nippon Telegr & Teleph Corp <Ntt> Insulating gate field effect transistor
DE2801085A1 (de) * 1977-01-11 1978-07-13 Zaidan Hojin Handotai Kenkyu Statischer induktionstransistor
US4943537A (en) * 1988-06-23 1990-07-24 Dallas Semiconductor Corporation CMOS integrated circuit with reduced susceptibility to PMOS punchthrough
US5122474A (en) * 1988-06-23 1992-06-16 Dallas Semiconductor Corporation Method of fabricating a CMOS IC with reduced susceptibility to PMOS punchthrough
US4906588A (en) * 1988-06-23 1990-03-06 Dallas Semiconductor Corporation Enclosed buried channel transistor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1037293A (fr) * 1951-05-19 1953-09-15 Licentia Gmbh Redresseur sec à contrôle électrique et son procédé de fabrication
US2900531A (en) * 1957-02-28 1959-08-18 Rca Corp Field-effect transistor
NL265382A (fr) * 1960-03-08
US3183128A (en) * 1962-06-11 1965-05-11 Fairchild Camera Instr Co Method of making field-effect transistors
BE636317A (fr) * 1962-08-23 1900-01-01
US3202840A (en) * 1963-03-19 1965-08-24 Rca Corp Frequency doubler employing two push-pull pulsed internal field effect devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1954639A1 (de) * 1968-10-31 1970-09-03 Nat Semiconductor Corp Vorrichtung und Verfahren zum Schutz gegen Oberflaechenumkehr

Also Published As

Publication number Publication date
SE330574B (fr) 1970-11-23
GB1115944A (en) 1968-06-06
DE1514374B1 (de) 1970-09-10
ES319914A1 (es) 1966-05-16
US3305708A (en) 1967-02-21
NL6515237A (fr) 1966-05-26

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