BE774722A - Transistor a effet de champ du type metal-oxyde-silicium isole par des regions de garde diffusees - Google Patents

Transistor a effet de champ du type metal-oxyde-silicium isole par des regions de garde diffusees

Info

Publication number
BE774722A
BE774722A BE774722A BE774722A BE774722A BE 774722 A BE774722 A BE 774722A BE 774722 A BE774722 A BE 774722A BE 774722 A BE774722 A BE 774722A BE 774722 A BE774722 A BE 774722A
Authority
BE
Belgium
Prior art keywords
oxide
metal
effect transistor
type field
silicon type
Prior art date
Application number
BE774722A
Other languages
English (en)
Inventor
U S Davidsohn
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of BE774722A publication Critical patent/BE774722A/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
BE774722A 1970-11-02 1971-10-29 Transistor a effet de champ du type metal-oxyde-silicium isole par des regions de garde diffusees BE774722A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US8654470A 1970-11-02 1970-11-02
US095521A US3868721A (en) 1970-11-02 1970-12-07 Diffusion guarded metal-oxide-silicon field effect transistors

Publications (1)

Publication Number Publication Date
BE774722A true BE774722A (fr) 1972-05-02

Family

ID=26774863

Family Applications (1)

Application Number Title Priority Date Filing Date
BE774722A BE774722A (fr) 1970-11-02 1971-10-29 Transistor a effet de champ du type metal-oxyde-silicium isole par des regions de garde diffusees

Country Status (8)

Country Link
US (1) US3868721A (fr)
BE (1) BE774722A (fr)
DE (2) DE7141390U (fr)
FR (1) FR2112385A1 (fr)
GB (3) GB1378148A (fr)
IL (1) IL38044A0 (fr)
IT (2) IT939699B (fr)
NL (1) NL7115074A (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4123771A (en) * 1973-09-21 1978-10-31 Tokyo Shibaura Electric Co., Ltd. Nonvolatile semiconductor memory
IN144541B (fr) * 1975-06-11 1978-05-13 Rca Corp
US4240093A (en) * 1976-12-10 1980-12-16 Rca Corporation Integrated circuit device including both N-channel and P-channel insulated gate field effect transistors
EP0248267A3 (fr) * 1986-06-06 1990-04-25 Siemens Aktiengesellschaft Circuit intégré monolithiques à branches de circuit parallèles entre elles
US4860080A (en) * 1987-03-31 1989-08-22 General Electric Company Isolation for transistor devices having a pilot structure
US4864380A (en) * 1987-05-12 1989-09-05 General Electric Company Edgeless CMOS device
US5670816A (en) * 1989-04-07 1997-09-23 Kabushiki Kaisha Toshiba Semiconductor device
JP3267479B2 (ja) * 1995-10-11 2002-03-18 東芝マイクロエレクトロニクス株式会社 半導体集積回路装置
US6883894B2 (en) 2001-03-19 2005-04-26 Hewlett-Packard Development Company, L.P. Printhead with looped gate transistor structures
JP2006202860A (ja) * 2005-01-19 2006-08-03 Toshiba Corp 半導体装置及びその製造方法
US7511345B2 (en) * 2005-06-21 2009-03-31 Sarnoff Corporation Bulk resistance control technique

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3272989A (en) * 1963-12-17 1966-09-13 Rca Corp Integrated electrical circuit
US3403270A (en) * 1965-05-10 1968-09-24 Gen Micro Electronics Inc Overvoltage protective circuit for insulated gate field effect transistor
US3440502A (en) * 1966-07-05 1969-04-22 Westinghouse Electric Corp Insulated gate field effect transistor structure with reduced current leakage
US3427514A (en) * 1966-10-13 1969-02-11 Rca Corp Mos tetrode
US3518750A (en) * 1968-10-02 1970-07-07 Nat Semiconductor Corp Method of manufacturing a misfet
US3576478A (en) * 1969-07-22 1971-04-27 Philco Ford Corp Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode

Also Published As

Publication number Publication date
IT939699B (it) 1973-02-10
GB1378146A (en) 1974-12-18
DE2154508A1 (de) 1972-07-06
GB1378148A (en) 1974-12-18
FR2112385A1 (fr) 1972-06-16
DE7141390U (de) 1972-09-21
IT939700B (it) 1973-02-10
IL38044A0 (en) 1972-01-27
NL7115074A (fr) 1972-05-04
US3868721A (en) 1975-02-25
GB1378147A (en) 1974-12-18

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