IT939699B - Perfezionamento nei transistori ad effetto di campo di tipo metallo ossido silicio con elemento di guardia a diffusione - Google Patents

Perfezionamento nei transistori ad effetto di campo di tipo metallo ossido silicio con elemento di guardia a diffusione

Info

Publication number
IT939699B
IT939699B IT53821/71A IT5382171A IT939699B IT 939699 B IT939699 B IT 939699B IT 53821/71 A IT53821/71 A IT 53821/71A IT 5382171 A IT5382171 A IT 5382171A IT 939699 B IT939699 B IT 939699B
Authority
IT
Italy
Prior art keywords
improvement
metal
type field
effect transistors
oxide silicon
Prior art date
Application number
IT53821/71A
Other languages
English (en)
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of IT939699B publication Critical patent/IT939699B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
IT53821/71A 1970-11-02 1971-10-30 Perfezionamento nei transistori ad effetto di campo di tipo metallo ossido silicio con elemento di guardia a diffusione IT939699B (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US8654470A 1970-11-02 1970-11-02
US095521A US3868721A (en) 1970-11-02 1970-12-07 Diffusion guarded metal-oxide-silicon field effect transistors

Publications (1)

Publication Number Publication Date
IT939699B true IT939699B (it) 1973-02-10

Family

ID=26774863

Family Applications (2)

Application Number Title Priority Date Filing Date
IT53821/71A IT939699B (it) 1970-11-02 1971-10-30 Perfezionamento nei transistori ad effetto di campo di tipo metallo ossido silicio con elemento di guardia a diffusione
IT53822/71A IT939700B (it) 1970-11-02 1971-10-30 Perfezionamento nei transistori ad effetto di campo di tipo metal lo ossido silicio con elemento di guardia a diffusione

Family Applications After (1)

Application Number Title Priority Date Filing Date
IT53822/71A IT939700B (it) 1970-11-02 1971-10-30 Perfezionamento nei transistori ad effetto di campo di tipo metal lo ossido silicio con elemento di guardia a diffusione

Country Status (8)

Country Link
US (1) US3868721A (it)
BE (1) BE774722A (it)
DE (2) DE2154508A1 (it)
FR (1) FR2112385A1 (it)
GB (3) GB1378146A (it)
IL (1) IL38044A0 (it)
IT (2) IT939699B (it)
NL (1) NL7115074A (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4123771A (en) * 1973-09-21 1978-10-31 Tokyo Shibaura Electric Co., Ltd. Nonvolatile semiconductor memory
IN144541B (it) * 1975-06-11 1978-05-13 Rca Corp
US4240093A (en) * 1976-12-10 1980-12-16 Rca Corporation Integrated circuit device including both N-channel and P-channel insulated gate field effect transistors
EP0248267A3 (de) * 1986-06-06 1990-04-25 Siemens Aktiengesellschaft Monolithisch integrierte Schaltung mit zueinander parallelen Schaltungszweigen
US4860080A (en) * 1987-03-31 1989-08-22 General Electric Company Isolation for transistor devices having a pilot structure
US4864380A (en) * 1987-05-12 1989-09-05 General Electric Company Edgeless CMOS device
US5670816A (en) * 1989-04-07 1997-09-23 Kabushiki Kaisha Toshiba Semiconductor device
JP3267479B2 (ja) * 1995-10-11 2002-03-18 東芝マイクロエレクトロニクス株式会社 半導体集積回路装置
US6883894B2 (en) 2001-03-19 2005-04-26 Hewlett-Packard Development Company, L.P. Printhead with looped gate transistor structures
JP2006202860A (ja) * 2005-01-19 2006-08-03 Toshiba Corp 半導体装置及びその製造方法
US7511345B2 (en) * 2005-06-21 2009-03-31 Sarnoff Corporation Bulk resistance control technique

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3272989A (en) * 1963-12-17 1966-09-13 Rca Corp Integrated electrical circuit
US3403270A (en) * 1965-05-10 1968-09-24 Gen Micro Electronics Inc Overvoltage protective circuit for insulated gate field effect transistor
US3440502A (en) * 1966-07-05 1969-04-22 Westinghouse Electric Corp Insulated gate field effect transistor structure with reduced current leakage
US3427514A (en) * 1966-10-13 1969-02-11 Rca Corp Mos tetrode
US3518750A (en) * 1968-10-02 1970-07-07 Nat Semiconductor Corp Method of manufacturing a misfet
US3576478A (en) * 1969-07-22 1971-04-27 Philco Ford Corp Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode

Also Published As

Publication number Publication date
US3868721A (en) 1975-02-25
IT939700B (it) 1973-02-10
GB1378147A (en) 1974-12-18
DE7141390U (de) 1972-09-21
FR2112385A1 (it) 1972-06-16
IL38044A0 (en) 1972-01-27
DE2154508A1 (de) 1972-07-06
GB1378146A (en) 1974-12-18
NL7115074A (it) 1972-05-04
BE774722A (fr) 1972-05-02
GB1378148A (en) 1974-12-18

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