FR2112385A1 - - Google Patents
Info
- Publication number
- FR2112385A1 FR2112385A1 FR7138960A FR7138960A FR2112385A1 FR 2112385 A1 FR2112385 A1 FR 2112385A1 FR 7138960 A FR7138960 A FR 7138960A FR 7138960 A FR7138960 A FR 7138960A FR 2112385 A1 FR2112385 A1 FR 2112385A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US8654470A | 1970-11-02 | 1970-11-02 | |
| US095521A US3868721A (en) | 1970-11-02 | 1970-12-07 | Diffusion guarded metal-oxide-silicon field effect transistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR2112385A1 true FR2112385A1 (fr) | 1972-06-16 |
Family
ID=26774863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7138960A Withdrawn FR2112385A1 (fr) | 1970-11-02 | 1971-10-29 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3868721A (fr) |
| BE (1) | BE774722A (fr) |
| DE (2) | DE7141390U (fr) |
| FR (1) | FR2112385A1 (fr) |
| GB (3) | GB1378147A (fr) |
| IL (1) | IL38044A0 (fr) |
| IT (2) | IT939699B (fr) |
| NL (1) | NL7115074A (fr) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4123771A (en) * | 1973-09-21 | 1978-10-31 | Tokyo Shibaura Electric Co., Ltd. | Nonvolatile semiconductor memory |
| IN144541B (fr) * | 1975-06-11 | 1978-05-13 | Rca Corp | |
| US4240093A (en) * | 1976-12-10 | 1980-12-16 | Rca Corporation | Integrated circuit device including both N-channel and P-channel insulated gate field effect transistors |
| EP0248267A3 (fr) * | 1986-06-06 | 1990-04-25 | Siemens Aktiengesellschaft | Circuit intégré monolithiques à branches de circuit parallèles entre elles |
| US4860080A (en) * | 1987-03-31 | 1989-08-22 | General Electric Company | Isolation for transistor devices having a pilot structure |
| US4864380A (en) * | 1987-05-12 | 1989-09-05 | General Electric Company | Edgeless CMOS device |
| US5670816A (en) * | 1989-04-07 | 1997-09-23 | Kabushiki Kaisha Toshiba | Semiconductor device |
| JP3267479B2 (ja) * | 1995-10-11 | 2002-03-18 | 東芝マイクロエレクトロニクス株式会社 | 半導体集積回路装置 |
| US6883894B2 (en) * | 2001-03-19 | 2005-04-26 | Hewlett-Packard Development Company, L.P. | Printhead with looped gate transistor structures |
| JP2006202860A (ja) * | 2005-01-19 | 2006-08-03 | Toshiba Corp | 半導体装置及びその製造方法 |
| US7511345B2 (en) * | 2005-06-21 | 2009-03-31 | Sarnoff Corporation | Bulk resistance control technique |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3272989A (en) * | 1963-12-17 | 1966-09-13 | Rca Corp | Integrated electrical circuit |
| US3403270A (en) * | 1965-05-10 | 1968-09-24 | Gen Micro Electronics Inc | Overvoltage protective circuit for insulated gate field effect transistor |
| US3440502A (en) * | 1966-07-05 | 1969-04-22 | Westinghouse Electric Corp | Insulated gate field effect transistor structure with reduced current leakage |
| US3427514A (en) * | 1966-10-13 | 1969-02-11 | Rca Corp | Mos tetrode |
| US3518750A (en) * | 1968-10-02 | 1970-07-07 | Nat Semiconductor Corp | Method of manufacturing a misfet |
| US3576478A (en) * | 1969-07-22 | 1971-04-27 | Philco Ford Corp | Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode |
-
1970
- 1970-12-07 US US095521A patent/US3868721A/en not_active Expired - Lifetime
-
1971
- 1971-10-29 GB GB2406374A patent/GB1378147A/en not_active Expired
- 1971-10-29 GB GB2406474A patent/GB1378148A/en not_active Expired
- 1971-10-29 GB GB5032671A patent/GB1378146A/en not_active Expired
- 1971-10-29 BE BE774722A patent/BE774722A/fr unknown
- 1971-10-29 FR FR7138960A patent/FR2112385A1/fr not_active Withdrawn
- 1971-10-30 IT IT53821/71A patent/IT939699B/it active
- 1971-10-30 IT IT53822/71A patent/IT939700B/it active
- 1971-11-01 IL IL38044A patent/IL38044A0/xx unknown
- 1971-11-02 DE DE19717141390U patent/DE7141390U/de not_active Expired
- 1971-11-02 DE DE19712154508 patent/DE2154508A1/de active Pending
- 1971-11-02 NL NL7115074A patent/NL7115074A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE7141390U (de) | 1972-09-21 |
| GB1378147A (en) | 1974-12-18 |
| IT939700B (it) | 1973-02-10 |
| IT939699B (it) | 1973-02-10 |
| GB1378146A (en) | 1974-12-18 |
| NL7115074A (fr) | 1972-05-04 |
| US3868721A (en) | 1975-02-25 |
| BE774722A (fr) | 1972-05-02 |
| DE2154508A1 (de) | 1972-07-06 |
| GB1378148A (en) | 1974-12-18 |
| IL38044A0 (en) | 1972-01-27 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |