BE776573A - Procede pour deposer un metal refractaire sur une couche de bioxyde de silicium notamment pour la fabrication de microcircuits monolithiques en silicium - Google Patents

Procede pour deposer un metal refractaire sur une couche de bioxyde de silicium notamment pour la fabrication de microcircuits monolithiques en silicium

Info

Publication number
BE776573A
BE776573A BE776573A BE776573A BE776573A BE 776573 A BE776573 A BE 776573A BE 776573 A BE776573 A BE 776573A BE 776573 A BE776573 A BE 776573A BE 776573 A BE776573 A BE 776573A
Authority
BE
Belgium
Prior art keywords
silicon
deposing
manufacture
layer
refractory metal
Prior art date
Application number
BE776573A
Other languages
English (en)
French (fr)
Inventor
W A Grill
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of BE776573A publication Critical patent/BE776573A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/497—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
BE776573A 1970-12-14 1971-12-10 Procede pour deposer un metal refractaire sur une couche de bioxyde de silicium notamment pour la fabrication de microcircuits monolithiques en silicium BE776573A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9779670A 1970-12-14 1970-12-14

Publications (1)

Publication Number Publication Date
BE776573A true BE776573A (fr) 1972-04-04

Family

ID=22265175

Family Applications (1)

Application Number Title Priority Date Filing Date
BE776573A BE776573A (fr) 1970-12-14 1971-12-10 Procede pour deposer un metal refractaire sur une couche de bioxyde de silicium notamment pour la fabrication de microcircuits monolithiques en silicium

Country Status (7)

Country Link
US (1) US3785862A (2)
JP (1) JPS517156B1 (2)
BE (1) BE776573A (2)
CA (1) CA960923A (2)
DE (1) DE2161055A1 (2)
FR (1) FR2118011B1 (2)
GB (1) GB1364898A (2)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1399163A (en) * 1972-11-08 1975-06-25 Ferranti Ltd Methods of manufacturing semiconductor devices
JPS52138961U (2) * 1976-04-16 1977-10-21
US4265935A (en) * 1977-04-28 1981-05-05 Micro Power Systems Inc. High temperature refractory metal contact assembly and multiple layer interconnect structure
JPS5487175A (en) * 1977-12-23 1979-07-11 Cho Lsi Gijutsu Kenkyu Kumiai Method of fabricating semiconductor
JPS54151577U (2) * 1978-04-10 1979-10-22
US4404235A (en) * 1981-02-23 1983-09-13 Rca Corporation Method for improving adhesion of metal film on a dielectric surface
US4349408A (en) * 1981-03-26 1982-09-14 Rca Corporation Method of depositing a refractory metal on a semiconductor substrate
US4343676A (en) * 1981-03-26 1982-08-10 Rca Corporation Etching a semiconductor material and automatically stopping same
DE3141567C2 (de) * 1981-10-20 1986-02-06 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von aus Tantal, Wolfram oder Molybdän bestehenden Schichten bei niedrigen Temperaturen und Verwendung dieser Schichten
US4471004A (en) * 1983-04-28 1984-09-11 General Electric Company Method of forming refractory metal conductors of low resistivity
US4584207A (en) * 1984-09-24 1986-04-22 General Electric Company Method for nucleating and growing tungsten films
US5084414A (en) * 1985-03-15 1992-01-28 Hewlett-Packard Company Metal interconnection system with a planar surface
JPS61274345A (ja) * 1985-05-29 1986-12-04 Toshiba Corp 半導体装置の製造方法
US4808552A (en) * 1985-09-11 1989-02-28 Texas Instruments Incorporated Process for making vertically-oriented interconnections for VLSI devices
US4617087A (en) * 1985-09-27 1986-10-14 International Business Machines Corporation Method for differential selective deposition of metal for fabricating metal contacts in integrated semiconductor circuits
US4650696A (en) * 1985-10-01 1987-03-17 Harris Corporation Process using tungsten for multilevel metallization
US4741928A (en) * 1985-12-27 1988-05-03 General Electric Company Method for selective deposition of tungsten by chemical vapor deposition onto metal and semiconductor surfaces
US4732801A (en) * 1986-04-30 1988-03-22 International Business Machines Corporation Graded oxide/nitride via structure and method of fabrication therefor
JPH01501985A (ja) * 1986-07-31 1989-07-06 アメリカン　テレフォン　アンド　テレグラフ　カムパニー 改良メタライゼーションを有する半導体デバイス
US4902533A (en) * 1987-06-19 1990-02-20 Motorola, Inc. Method for selectively depositing tungsten on a substrate by using a spin-on metal oxide
JP2733244B2 (ja) * 1988-04-07 1998-03-30 株式会社日立製作所 配線形成方法
US5182231A (en) * 1988-04-07 1993-01-26 Hitachi, Ltd. Method for modifying wiring of semiconductor device
US5112439A (en) * 1988-11-30 1992-05-12 Mcnc Method for selectively depositing material on substrates
US5037775A (en) * 1988-11-30 1991-08-06 Mcnc Method for selectively depositing single elemental semiconductor material on substrates
DE69120446T2 (de) * 1990-02-19 1996-11-14 Canon Kk Verfahren zum Herstellen von abgeschiedener Metallschicht, die Aluminium als Hauptkomponente enthält, mit Anwendung von Alkylaluminiumhydrid
US6022485A (en) * 1997-10-17 2000-02-08 International Business Machines Corporation Method for controlled removal of material from a solid surface
US7211144B2 (en) * 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US7704327B2 (en) * 2002-09-30 2010-04-27 Applied Materials, Inc. High temperature anneal with improved substrate support
JP4941921B2 (ja) * 2005-03-14 2012-05-30 株式会社アルバック 選択Ｗ−ＣＶＤ法及びＣｕ多層配線の製作法
DE102008035235B4 (de) * 2008-07-29 2014-05-22 Ivoclar Vivadent Ag Vorrichtung zur Erwärmung von Formteilen, insbesondere dentalkeramischen Formteilen
JP5521561B2 (ja) * 2010-01-12 2014-06-18 信越半導体株式会社 貼り合わせウェーハの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3477872A (en) * 1966-09-21 1969-11-11 Rca Corp Method of depositing refractory metals

Also Published As

Publication number Publication date
GB1364898A (en) 1974-08-29
US3785862A (en) 1974-01-15
JPS517156B1 (2) 1976-03-05
FR2118011B1 (2) 1975-08-29
DE2161055A1 (de) 1972-06-29
FR2118011A1 (2) 1972-07-28
CA960923A (en) 1975-01-14

Similar Documents

Publication Publication Date Title
BE776573A (fr) Procede pour deposer un metal refractaire sur une couche de bioxyde de silicium notamment pour la fabrication de microcircuits monolithiques en silicium
CH553856A (fr) Procede pour la fabrication de fibrilles discontinues.
BE785150A (fr) Procede pour la fabrication de dispositifs semiconducteurs
BE792614A (fr) Procede de realisation d'une couche d'oxyde sur un semi-conducteur
BE785287A (fr) Procede de fabrication des conducteurs-poutres pour dispositifssemiconducteurs
BE801819A (fr) Installation pour la fabrication de panneaux de copeaux
IT976112B (it) Procedimento per la fabbricazione di dispositivi semiconduttori
IT963413B (it) Procedimento di fotoincisione particolarmente per la fabbrica zione di circuiti integrati
BE775973A (fr) Procede de realisation d'un composant semi-conducteur a substrat isolant recouvert partiellement d'une couche semi-conductrice
NL7414233A (nl) Halfgeleiderinrichting met hitte bestendige metalen laag.
BE769289A (fr) Procede de fabrication de tetrafluorure de silicium
BE799180A (fr) Procede de fabrication de materiaux-supports impregnes, appropries pour le doublage de surfaces
BE766651A (fr) Procede pour la fabrication de dispositifs semiconducteurs a circuits integres
BE784534A (fr) Procede de fabrication d'objets en acier au silicium
BE780738A (fr) Composition vitrifiable, procede et installation pour sa fabrication
BE783326A (fr) Procede pour la preparation de dioxyde de silicium finement divise a grande surface
BE771333A (fr) Procede de fabrication de frittes en nitrure de bore
BE782745A (fr) Revetement pour marches d'escalier
BE766690A (fr) Couche de meulage a diamants, notamment pour un segment de honage
AR200455A1 (es) Procedimiento de tratamiento de superficies de aleaciones ferrosas por deposito de una aleacion cobre-estano seguido de un tratamiento termico de difusion
IT1010053B (it) Procedimento per fabbricare un dispositivo di silicio o carburo di silicio per processi di diffu sione
BE783977A (fr) Installation pour la fabrication de plaques en beton.
BE780423A (fr) Procede de fabrication de circuits integres au silicium
OA03548A (fr) Machine et installation pour la fabrication de tuyaux, notamment en amiante-ciment.
BE768009A (fr) Element semi-conducteur et procede pour sa fabrication