BE862557A - Procede d'implantation ionique permettant l'utilisation d'un courant de forte intensite - Google Patents

Procede d'implantation ionique permettant l'utilisation d'un courant de forte intensite

Info

Publication number
BE862557A
BE862557A BE184040A BE184040A BE862557A BE 862557 A BE862557 A BE 862557A BE 184040 A BE184040 A BE 184040A BE 184040 A BE184040 A BE 184040A BE 862557 A BE862557 A BE 862557A
Authority
BE
Belgium
Prior art keywords
implantation process
strong current
process allowing
ionic implantation
ionic
Prior art date
Application number
BE184040A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of BE862557A publication Critical patent/BE862557A/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/40—Ion implantation into wafers, substrates or parts of devices into insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
BE184040A 1977-01-31 1977-12-30 Procede d'implantation ionique permettant l'utilisation d'un courant de forte intensite BE862557A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/763,789 US4076558A (en) 1977-01-31 1977-01-31 Method of high current ion implantation and charge reduction by simultaneous kerf implant

Publications (1)

Publication Number Publication Date
BE862557A true BE862557A (fr) 1978-04-14

Family

ID=25068815

Family Applications (1)

Application Number Title Priority Date Filing Date
BE184040A BE862557A (fr) 1977-01-31 1977-12-30 Procede d'implantation ionique permettant l'utilisation d'un courant de forte intensite

Country Status (12)

Country Link
US (1) US4076558A (fr)
JP (1) JPS5910576B2 (fr)
BE (1) BE862557A (fr)
CA (1) CA1043474A (fr)
CH (1) CH632105A5 (fr)
DE (1) DE2801271C2 (fr)
ES (1) ES466448A1 (fr)
FR (1) FR2379163A1 (fr)
GB (1) GB1549971A (fr)
IT (1) IT1114183B (fr)
NL (1) NL7800851A (fr)
SE (1) SE425826B (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5839376B2 (ja) * 1978-10-30 1983-08-30 富士通株式会社 イオン注入法
US4249962A (en) * 1979-09-11 1981-02-10 Western Electric Company, Inc. Method of removing contaminating impurities from device areas in a semiconductor wafer
US4463255A (en) * 1980-09-24 1984-07-31 Varian Associates, Inc. Apparatus for enhanced neutralization of positively charged ion beam
US4453086A (en) * 1981-12-31 1984-06-05 International Business Machines Corporation Electron beam system with reduced charge buildup
JPS60198721A (ja) * 1984-03-22 1985-10-08 Fujitsu Ltd 半導体装置の製造方法
US5136171A (en) * 1990-03-02 1992-08-04 Varian Associates, Inc. Charge neutralization apparatus for ion implantation system

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3507709A (en) * 1967-09-15 1970-04-21 Hughes Aircraft Co Method of irradiating dielectriccoated semiconductor bodies with low energy electrons
NL6715013A (fr) * 1967-11-04 1969-05-06
US3701696A (en) * 1969-08-20 1972-10-31 Gen Electric Process for simultaneously gettering,passivating and locating a junction within a silicon crystal
JPS4819113B1 (fr) * 1969-08-27 1973-06-11
US3728161A (en) * 1971-12-28 1973-04-17 Bell Telephone Labor Inc Integrated circuits with ion implanted chan stops
US3790412A (en) * 1972-04-07 1974-02-05 Bell Telephone Labor Inc Method of reducing the effects of particle impingement on shadow masks
JPS49118367A (fr) * 1973-03-12 1974-11-12

Also Published As

Publication number Publication date
ES466448A1 (es) 1978-10-16
DE2801271A1 (de) 1978-08-03
NL7800851A (nl) 1978-08-02
FR2379163A1 (fr) 1978-08-25
FR2379163B1 (fr) 1980-12-19
CA1043474A (fr) 1978-11-28
JPS5396665A (en) 1978-08-24
US4076558A (en) 1978-02-28
CH632105A5 (de) 1982-09-15
IT1114183B (it) 1986-01-27
DE2801271C2 (de) 1988-01-21
SE7800954L (sv) 1978-08-01
JPS5910576B2 (ja) 1984-03-09
SE425826B (sv) 1982-11-08
GB1549971A (en) 1979-08-08

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: INTERNATIONAL BUSINESS MACHINES CORP.

Effective date: 19891231