BE898948A - Thyristor auto-protege et son procede de fabrication - Google Patents

Thyristor auto-protege et son procede de fabrication

Info

Publication number
BE898948A
BE898948A BE0/212420A BE212420A BE898948A BE 898948 A BE898948 A BE 898948A BE 0/212420 A BE0/212420 A BE 0/212420A BE 212420 A BE212420 A BE 212420A BE 898948 A BE898948 A BE 898948A
Authority
BE
Belgium
Prior art keywords
thyristor
manufacturing
self
relates
protected thyristor
Prior art date
Application number
BE0/212420A
Other languages
English (en)
Inventor
J Przybysz
J Ostop
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of BE898948A publication Critical patent/BE898948A/fr

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • H10D18/211Thyristors having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/965Shaped junction formation

Landscapes

  • Thyristors (AREA)

Abstract

L'invention concerne un thyristor autoprotégé contre les surtensions par le mécanisme d'avalanche, la protection résultant d'une nervure annulaire (22) formée au laser dans la surface supérieure du thyristor et pénétrant dans une région de base du thyristor afin que la jonction de blocage direct soit déformée vers la jonction de blocage inverse en-dessous de la rainure annulaire; l'invention concerne également le procédé de fabrication de ce thyristor.
BE0/212420A 1983-02-18 1984-02-17 Thyristor auto-protege et son procede de fabrication BE898948A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/468,016 US4514898A (en) 1983-02-18 1983-02-18 Method of making a self protected thyristor

Publications (1)

Publication Number Publication Date
BE898948A true BE898948A (fr) 1984-08-17

Family

ID=23858093

Family Applications (1)

Application Number Title Priority Date Filing Date
BE0/212420A BE898948A (fr) 1983-02-18 1984-02-17 Thyristor auto-protege et son procede de fabrication

Country Status (10)

Country Link
US (1) US4514898A (fr)
JP (1) JPS59158561A (fr)
BE (1) BE898948A (fr)
BR (1) BR8400664A (fr)
CA (1) CA1207086A (fr)
DE (1) DE3405549C2 (fr)
FR (1) FR2541513B1 (fr)
GB (1) GB2135514B (fr)
IE (1) IE55503B1 (fr)
IN (1) IN162342B (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH670333A5 (fr) * 1986-04-30 1989-05-31 Bbc Brown Boveri & Cie
JPS63260078A (ja) * 1987-04-17 1988-10-27 Hitachi Ltd 過電圧自己保護型サイリスタ
JPH01136369A (ja) * 1987-11-21 1989-05-29 Toshiba Corp 過電圧保護機能付半導体装置の製造方法
US4904609A (en) * 1988-05-06 1990-02-27 General Electric Company Method of making symmetrical blocking high voltage breakdown semiconductor device
US5204273A (en) * 1990-08-20 1993-04-20 Siemens Aktiengesellschaft Method for the manufacturing of a thyristor with defined lateral resistor
US5645711A (en) * 1996-01-05 1997-07-08 Conoco Inc. Process for upgrading the flash zone gas oil stream from a delayed coker
US20020170897A1 (en) * 2001-05-21 2002-11-21 Hall Frank L. Methods for preparing ball grid array substrates via use of a laser

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2238564C3 (de) * 1972-08-04 1981-02-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
US4047219A (en) * 1975-11-03 1977-09-06 General Electric Company Radiation sensitive thyristor structure with isolated detector
US4176371A (en) * 1976-01-09 1979-11-27 Westinghouse Electric Corp. Thyristor fired by overvoltage
US4087834A (en) * 1976-03-22 1978-05-02 General Electric Company Self-protecting semiconductor device
DE2928685A1 (de) * 1978-07-20 1980-01-31 Electric Power Res Inst Thyristor mit gesteuertem strom bei spannungsdurchbruch und verfahren zur begrenzung des durchbruchstroms in durchlassrichtung durch einen thyristor
US4261000A (en) * 1980-05-23 1981-04-07 General Electric Company High voltage semiconductor device having an improved dv/dt capability
JPS5785259A (en) * 1980-11-17 1982-05-27 Hitachi Ltd Light drive type thyristor
IE54111B1 (en) * 1982-03-11 1989-06-21 Westinghouse Electric Corp Laser treatment of thyristor to provide overvoltage self-protection

Also Published As

Publication number Publication date
DE3405549C2 (de) 1994-05-11
IN162342B (fr) 1988-05-07
BR8400664A (pt) 1984-09-25
CA1207086A (fr) 1986-07-02
GB2135514B (en) 1986-08-28
GB2135514A (en) 1984-08-30
DE3405549A1 (de) 1984-08-23
GB8402718D0 (en) 1984-03-07
JPS59158561A (ja) 1984-09-08
FR2541513A1 (fr) 1984-08-24
IE55503B1 (en) 1990-10-10
IE840247L (en) 1984-08-18
FR2541513B1 (fr) 1987-01-16
US4514898A (en) 1985-05-07

Similar Documents

Publication Publication Date Title
ATE59116T1 (de) Halbleiteranordnung mit mehreren uebergaengen.
KR850008558A (ko) 애벌란시 광전 다이오우드의 제조방법 및 애벌란시 광전 다이오우드
MY124274A (en) Semiconductor device having a light-receiving element, optical pickup device and method of manufacturing a semiconductor device having a light-receiving element
BE898948A (fr) Thyristor auto-protege et son procede de fabrication
FR2431770A1 (fr) Photodiode avalanche a semi-conducteurs de structure heterogene
DE3168477D1 (en) Laser source with semiconductor junction using schottky diodes, and production method
FR2445619A1 (fr) Procede de fabrication d'un dispositif a semi-conducteurs
CA1265863C (fr) Laser a semiconducteur a reaction repartie avec moniteur
JPS56126968A (en) Semiconductor device
JPS572571A (en) Thyristor and method of producing same
JPS6453582A (en) Variable capacitance diode device
TW326110B (en) Manufacturing method for inversed T-type well component
DE3685020D1 (de) Strukturierter halbleiterkoerper.
FR2390004A1 (en) Semiconductors, such as bipolar transistors - with amorphous layers locally crystallised by e.g. laser to reduce number of mfg. operations
IE830266L (en) Overvoltage protection of thyristors
JPS54154980A (en) Constant voltage diode
JPS5310265A (en) Impurity diffusion method
IE840248L (en) Light activated power transistor
JPS5512792A (en) Voltage reference diode
JPS5745274A (en) Semiconductor device
JPS57126172A (en) Schottky barrier diode
FR2436499A1 (fr) Thyristor de puissance scelle par du verre
JPS5656673A (en) Manufacture of reverse-conductivity double-terminal thyristor
JPS54102993A (en) Optical semiconductor device
JPS57117275A (en) Semiconductor device

Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: WESTINGHOUSE ELECTRIC CORP.

Effective date: 19920228