JPS5512792A - Voltage reference diode - Google Patents

Voltage reference diode

Info

Publication number
JPS5512792A
JPS5512792A JP8625478A JP8625478A JPS5512792A JP S5512792 A JPS5512792 A JP S5512792A JP 8625478 A JP8625478 A JP 8625478A JP 8625478 A JP8625478 A JP 8625478A JP S5512792 A JPS5512792 A JP S5512792A
Authority
JP
Japan
Prior art keywords
junction
diode
substrate
smaller
enveloping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8625478A
Other languages
Japanese (ja)
Inventor
Toshiaki Kodama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8625478A priority Critical patent/JPS5512792A/en
Publication of JPS5512792A publication Critical patent/JPS5512792A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To reduce the noise draft by enveloping the periphery of P-N junction of a temperature compensation diode by a P-N junction having a smaller depth than the first-mentioned P-N junction.
CONSTITUTION: In the periphery of a P-N junction J3 of a temperature compensating forward diode, provided is a P-N junction J4 enveloping the junction J3 and having a smaller depth than the latter. By so doing, the difference of impurity concentration between the junction J3 in the bulk and the substrate is made smaller than that between the junction J4 exposed to the substrate surface and the substrate, so that the forward voltage in the juction J3 is smaller than the forward voltage of the junction J4. In consequence, the electric current can hardly flow in the surface region, and the electric current flows only through the PN junction J3 in the bulk. It is therefore possible to obtain at a high yield a voltage reference diode which has a small drift and which is less liable to suffer unstable factors at the boundary between the junction and the protective film.
COPYRIGHT: (C)1980,JPO&Japio
JP8625478A 1978-07-14 1978-07-14 Voltage reference diode Pending JPS5512792A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8625478A JPS5512792A (en) 1978-07-14 1978-07-14 Voltage reference diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8625478A JPS5512792A (en) 1978-07-14 1978-07-14 Voltage reference diode

Publications (1)

Publication Number Publication Date
JPS5512792A true JPS5512792A (en) 1980-01-29

Family

ID=13881674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8625478A Pending JPS5512792A (en) 1978-07-14 1978-07-14 Voltage reference diode

Country Status (1)

Country Link
JP (1) JPS5512792A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6269686A (en) * 1985-09-24 1987-03-30 Rohm Co Ltd Semiconductor device
JPS6322753U (en) * 1986-07-28 1988-02-15
JPH02185069A (en) * 1988-12-02 1990-07-19 Motorola Inc Semiconductor device with high energy blocking ability and temperature compensated blocking voltage
US5233214A (en) * 1989-09-14 1993-08-03 Robert Bosch Gmbh Controllable, temperature-compensated voltage limiter

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6269686A (en) * 1985-09-24 1987-03-30 Rohm Co Ltd Semiconductor device
JPS6322753U (en) * 1986-07-28 1988-02-15
JPH02185069A (en) * 1988-12-02 1990-07-19 Motorola Inc Semiconductor device with high energy blocking ability and temperature compensated blocking voltage
US5233214A (en) * 1989-09-14 1993-08-03 Robert Bosch Gmbh Controllable, temperature-compensated voltage limiter

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