BR0307501A - Derivados de sulfonato e o uso destes como ácidos latentes - Google Patents
Derivados de sulfonato e o uso destes como ácidos latentesInfo
- Publication number
- BR0307501A BR0307501A BR0307501-0A BR0307501A BR0307501A BR 0307501 A BR0307501 A BR 0307501A BR 0307501 A BR0307501 A BR 0307501A BR 0307501 A BR0307501 A BR 0307501A
- Authority
- BR
- Brazil
- Prior art keywords
- alkyl
- optionally substituted
- phenylene
- phenyl
- meanings given
- Prior art date
Links
- 239000002253 acid Substances 0.000 title abstract 4
- 150000007513 acids Chemical class 0.000 title abstract 2
- 125000001273 sulfonato group Chemical class [O-]S(*)(=O)=O 0.000 title 1
- 125000000217 alkyl group Chemical group 0.000 abstract 3
- 150000001875 compounds Chemical class 0.000 abstract 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 abstract 3
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 abstract 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 125000006702 (C1-C18) alkyl group Chemical group 0.000 abstract 1
- -1 anthracyl Chemical group 0.000 abstract 1
- JXLHNMVSKXFWAO-UHFFFAOYSA-N azane;7-fluoro-2,1,3-benzoxadiazole-4-sulfonic acid Chemical class N.OS(=O)(=O)C1=CC=C(F)C2=NON=C12 JXLHNMVSKXFWAO-UHFFFAOYSA-N 0.000 abstract 1
- 125000001072 heteroaryl group Chemical group 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 125000001624 naphthyl group Chemical group 0.000 abstract 1
- 125000004957 naphthylene group Chemical group 0.000 abstract 1
- 125000005561 phenanthryl group Chemical group 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0037—Production of three-dimensional images
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C323/00—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups
- C07C323/64—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and sulfur atoms, not being part of thio groups, bound to the same carbon skeleton
- C07C323/66—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and sulfur atoms, not being part of thio groups, bound to the same carbon skeleton containing sulfur atoms of sulfo, esterified sulfo or halosulfonyl groups, bound to the carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/001—Phase modulating patterns, e.g. refractive index patterns
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
- Materials For Photolithography (AREA)
- Nitrogen Condensed Heterocyclic Rings (AREA)
- Heterocyclic Compounds Containing Sulfur Atoms (AREA)
- Optical Filters (AREA)
- Indole Compounds (AREA)
- Hydrogenated Pyridines (AREA)
- Detergent Compositions (AREA)
- Agricultural Chemicals And Associated Chemicals (AREA)
Abstract
"DERIVADOS DE SULFONATO E O USO DESTES COMO áCIDOS LATENTES". A presente invenção refere-se a composições fotorresistentes quimicamente amplificadas compreendendo, (a) um composto que cura sob a ação de um ácido ou um composto cuja solubilidade é aumentada sob a ação de um ácido; e (b) um composto da fórmula Ia, Ib, IIa, IIb, IIIa, IIIb, IVa, IVb, Va, Vb ou Vla (Vla), em que n é 1 ou 2; m é 0 ou 1; X~ 0~ é -[CH~ 2~]~ h~-X ou -CH=CH~ 2~; h é 2, 3, 4, 5 ou 6; R~ 1~, quando n for 1, é, por exemplo, fenila opcionalmente substituída, naftila, antracila, fenantrila ou heteroarila; R~ 1~, quando n for 2, é,, por exemplo, fenileno ou naftileno opcionalmente substituído; R~ 2~, por exemplo, tem um dos significados de R~ 1~; X é,, por exemplo, -OR~ 20~, NR~ 21~R~ 22~ -SR~ 23~; X<39> é _x~ 1~_A~ 3~_X~ 2~_ ; São, por exemplo, -O-, -S- ou uma ligação direta; A~ 3~ é,, por exemplo, fenileno; R~ 3~ tem, por exemplo, um dos significados dados para R~ 1~; R~ 4~ tem, por exemplo, um dos significados dados para R~ 2~; R~ 5~ e R~ 6~, por exemplo, são hidrogênio; G i.a. é -S- ou -O-; R~ 7~, quando n for 1, por exemplo, é fenila, opcionalmente substituída, quando n for 2, é,, por exemplo, fenileno; R~ 8~ e R~ 9~, por exemplo, é C~ 1~-C~ 18~ alquila; R~ 10~ tem um dos significados dados para R~ 7~; R~ 11~ i.a. é C~ 1~-C~ 18~alquila; R~ 12~, R~ 13~, R~ 14~, R~ 15~ R~ 16~, R~ 17~ e R~ 18~, por exemplo, são hidrogênio ou C~ 1~-C~ 18~ alquila; R~ 20~, R~ 21~, R22 e R~ 23~ i.a. são fenila ou C~ 1~-C~ 18~alquila; dão alta resolução com bom perfil de resistentes.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP02405082 | 2002-02-06 | ||
| PCT/EP2003/000821 WO2003067332A2 (en) | 2002-02-06 | 2003-01-28 | Sulfonate derivatives and the use therof as latent acids |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BR0307501A true BR0307501A (pt) | 2004-12-07 |
Family
ID=27675790
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR0307501-0A BR0307501A (pt) | 2002-02-06 | 2003-01-28 | Derivados de sulfonato e o uso destes como ácidos latentes |
Country Status (11)
| Country | Link |
|---|---|
| US (2) | US7326511B2 (pt) |
| EP (1) | EP1472576B1 (pt) |
| JP (1) | JP2005517026A (pt) |
| KR (1) | KR20040089607A (pt) |
| CN (1) | CN100475798C (pt) |
| AU (1) | AU2003206787A1 (pt) |
| BR (1) | BR0307501A (pt) |
| CA (1) | CA2474532A1 (pt) |
| MX (1) | MXPA04006581A (pt) |
| TW (1) | TWI288859B (pt) |
| WO (1) | WO2003067332A2 (pt) |
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| AU2003301344A1 (en) | 2002-10-16 | 2004-05-04 | Georgia Tech Research Corporation | Polymers, methods of use thereof, and methods of decomposition thereof |
| EP1595182B1 (en) * | 2003-02-19 | 2015-09-30 | Basf Se | Halogenated oxime derivatives and the use thereof as latent acids |
| WO2006008250A2 (en) * | 2004-07-20 | 2006-01-26 | Ciba Specialty Chemicals Holding Inc. | Oxime derivatives and the use therof as latent acids |
| WO2006046398A1 (ja) * | 2004-10-29 | 2006-05-04 | Nissan Chemical Industries, Ltd. | 光酸発生剤を含む染料含有レジスト組成物及びそれを用いるカラーフィルター |
| US7183036B2 (en) * | 2004-11-12 | 2007-02-27 | International Business Machines Corporation | Low activation energy positive resist |
| JP4484681B2 (ja) * | 2004-12-03 | 2010-06-16 | 富士フイルム株式会社 | 感光性組成物及び該感光性組成物を用いたパターン形成方法 |
| JP4780586B2 (ja) * | 2006-05-08 | 2011-09-28 | 旭化成イーマテリアルズ株式会社 | ポジ型感光性樹脂組成物 |
| WO2007147782A2 (en) * | 2006-06-20 | 2007-12-27 | Ciba Holding Inc. | Oxime sulfonates and the use therof as latent acids |
| BRPI0715723A2 (pt) * | 2006-08-24 | 2013-09-17 | Ciba Holding Inc | indicadores de doses de uv |
| JP4866783B2 (ja) * | 2007-04-27 | 2012-02-01 | 東京応化工業株式会社 | レジスト組成物およびレジストパターン形成方法 |
| GB2450975B (en) | 2007-07-12 | 2010-02-24 | Ciba Holding Inc | Yellow radiation curing inks |
| CN102037409B (zh) * | 2008-05-23 | 2013-12-11 | 康奈尔大学 | 在电子和电气设备中使用的有机材料的正交工艺 |
| TW201016651A (en) * | 2008-07-28 | 2010-05-01 | Sumitomo Chemical Co | Oxime compound and resist composition containing the same |
| EP2404315A4 (en) * | 2009-03-06 | 2012-08-08 | Du Pont | METHOD FOR FORMING AN ELECTROACTIVE LAYER |
| EP2414894B1 (en) | 2009-03-30 | 2014-02-12 | Basf Se | Uv-dose indicator films |
| KR101813298B1 (ko) * | 2010-02-24 | 2017-12-28 | 바스프 에스이 | 잠재성 산 및 그의 용도 |
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| JP5840146B2 (ja) * | 2011-01-17 | 2016-01-06 | 株式会社クラレ | ビニルスルホン酸エステル誘導体、高分子化合物およびフォトレジスト組成物 |
| WO2014025370A1 (en) | 2012-08-10 | 2014-02-13 | Hallstar Innovations Corp. | Tricyclic energy quencher compounds for reducing singlet oxygen generation |
| US9145383B2 (en) | 2012-08-10 | 2015-09-29 | Hallstar Innovations Corp. | Compositions, apparatus, systems, and methods for resolving electronic excited states |
| US9125829B2 (en) | 2012-08-17 | 2015-09-08 | Hallstar Innovations Corp. | Method of photostabilizing UV absorbers, particularly dibenzyolmethane derivatives, e.g., Avobenzone, with cyano-containing fused tricyclic compounds |
| JP6592896B2 (ja) * | 2014-01-10 | 2019-10-23 | 住友化学株式会社 | 樹脂及びレジスト組成物 |
| JP6904662B2 (ja) * | 2016-01-29 | 2021-07-21 | 株式会社アドテックエンジニアリング | 露光装置 |
| US9950999B2 (en) | 2016-08-12 | 2018-04-24 | International Business Machines Corporation | Non-ionic low diffusing photo-acid generators |
| ES2747768T3 (es) | 2017-03-20 | 2020-03-11 | Forma Therapeutics Inc | Composiciones de pirrolopirrol como activadores de quinasa de piruvato (PKR) |
| ES2989438T3 (es) | 2018-09-19 | 2024-11-26 | Novo Nordisk Healthcare Ag | Activación de la piruvato cinasa R |
| US12053458B2 (en) | 2018-09-19 | 2024-08-06 | Novo Nordisk Health Care Ag | Treating sickle cell disease with a pyruvate kinase R activating compound |
| US20220378756A1 (en) | 2019-09-19 | 2022-12-01 | Forma Therapeutics, Inc. | Activating pyruvate kinase r |
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| JP7041201B2 (ja) * | 2020-06-30 | 2022-03-23 | 株式会社アドテックエンジニアリング | 露光方法 |
| US12128035B2 (en) | 2021-03-19 | 2024-10-29 | Novo Nordisk Health Care Ag | Activating pyruvate kinase R |
| CN117042327B (zh) * | 2022-12-27 | 2024-01-30 | 珠海浩奕电子科技有限公司 | 一种高强度低介电常数印刷电路板及其制备工艺 |
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| EP0877293B1 (en) | 1997-05-09 | 2004-01-14 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition |
| DE69803117T2 (de) | 1997-05-12 | 2002-10-02 | Fuji Photo Film Co., Ltd. | Positiv arbeitende Resistzusammensetzung |
| TW550439B (en) | 1997-07-01 | 2003-09-01 | Ciba Sc Holding Ag | New oxime sulfonates as latent acids and compositions and photoresists comprising said oxime sulfonates |
| TW575792B (en) | 1998-08-19 | 2004-02-11 | Ciba Sc Holding Ag | New unsaturated oxime derivatives and the use thereof as latent acids |
| SG78412A1 (en) * | 1999-03-31 | 2001-02-20 | Ciba Sc Holding Ag | Oxime derivatives and the use thereof as latent acids |
| NL1014545C2 (nl) * | 1999-03-31 | 2002-02-26 | Ciba Sc Holding Ag | Oxim-derivaten en de toepassing daarvan als latente zuren. |
| TWI272451B (en) * | 2000-09-25 | 2007-02-01 | Ciba Sc Holding Ag | Chemically amplified photoresist composition, process for preparation of a photoresist, and use of said chemically amplified photoresist composition |
| JP4210439B2 (ja) * | 2001-04-05 | 2009-01-21 | 富士フイルム株式会社 | ポジ型フォトレジスト組成物 |
| DK1392675T3 (da) * | 2001-06-01 | 2005-04-04 | Ciba Sc Holding Ag | Substituerede oximderivater og anvendelsen deraf som latente syrer |
| JP2003182218A (ja) * | 2001-12-13 | 2003-07-03 | Fuji Photo Film Co Ltd | 感熱記録材料 |
-
2003
- 2003-01-28 AU AU2003206787A patent/AU2003206787A1/en not_active Abandoned
- 2003-01-28 KR KR10-2004-7012252A patent/KR20040089607A/ko not_active Ceased
- 2003-01-28 EP EP03704479.9A patent/EP1472576B1/en not_active Expired - Lifetime
- 2003-01-28 JP JP2003566624A patent/JP2005517026A/ja active Pending
- 2003-01-28 US US10/495,710 patent/US7326511B2/en not_active Expired - Fee Related
- 2003-01-28 CA CA002474532A patent/CA2474532A1/en not_active Abandoned
- 2003-01-28 MX MXPA04006581A patent/MXPA04006581A/es not_active Application Discontinuation
- 2003-01-28 CN CNB038033054A patent/CN100475798C/zh not_active Expired - Fee Related
- 2003-01-28 BR BR0307501-0A patent/BR0307501A/pt not_active Application Discontinuation
- 2003-01-28 WO PCT/EP2003/000821 patent/WO2003067332A2/en not_active Ceased
- 2003-01-30 TW TW092102265A patent/TWI288859B/zh not_active IP Right Cessation
-
2007
- 2007-12-04 US US11/999,116 patent/US20080286693A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| TW200302952A (en) | 2003-08-16 |
| CN100475798C (zh) | 2009-04-08 |
| CA2474532A1 (en) | 2003-08-14 |
| AU2003206787A1 (en) | 2003-09-02 |
| EP1472576B1 (en) | 2013-04-24 |
| KR20040089607A (ko) | 2004-10-21 |
| CN1628268A (zh) | 2005-06-15 |
| WO2003067332A2 (en) | 2003-08-14 |
| US20050153244A1 (en) | 2005-07-14 |
| TWI288859B (en) | 2007-10-21 |
| MXPA04006581A (es) | 2004-10-04 |
| EP1472576A2 (en) | 2004-11-03 |
| AU2003206787A8 (en) | 2003-09-02 |
| WO2003067332A3 (en) | 2003-12-24 |
| US20080286693A1 (en) | 2008-11-20 |
| US7326511B2 (en) | 2008-02-05 |
| JP2005517026A (ja) | 2005-06-09 |
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| B11Y | Definitive dismissal - extension of time limit for request of examination expired [chapter 11.1.1 patent gazette] |