BR0307501A - Derivados de sulfonato e o uso destes como ácidos latentes - Google Patents
Derivados de sulfonato e o uso destes como ácidos latentesInfo
- Publication number
- BR0307501A BR0307501A BR0307501-0A BR0307501A BR0307501A BR 0307501 A BR0307501 A BR 0307501A BR 0307501 A BR0307501 A BR 0307501A BR 0307501 A BR0307501 A BR 0307501A
- Authority
- BR
- Brazil
- Prior art keywords
- alkyl
- optionally substituted
- phenylene
- phenyl
- meanings given
- Prior art date
Links
- 239000002253 acid Substances 0.000 title abstract 4
- 150000007513 acids Chemical class 0.000 title abstract 2
- 125000001273 sulfonato group Chemical class [O-]S(*)(=O)=O 0.000 title 1
- 125000000217 alkyl group Chemical group 0.000 abstract 3
- 150000001875 compounds Chemical class 0.000 abstract 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 abstract 3
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 abstract 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 125000006702 (C1-C18) alkyl group Chemical group 0.000 abstract 1
- -1 anthracyl Chemical group 0.000 abstract 1
- JXLHNMVSKXFWAO-UHFFFAOYSA-N azane;7-fluoro-2,1,3-benzoxadiazole-4-sulfonic acid Chemical class N.OS(=O)(=O)C1=CC=C(F)C2=NON=C12 JXLHNMVSKXFWAO-UHFFFAOYSA-N 0.000 abstract 1
- 125000001072 heteroaryl group Chemical group 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 125000001624 naphthyl group Chemical group 0.000 abstract 1
- 125000004957 naphthylene group Chemical group 0.000 abstract 1
- 125000005561 phenanthryl group Chemical group 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0037—Production of three-dimensional images
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C323/00—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups
- C07C323/64—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and sulfur atoms, not being part of thio groups, bound to the same carbon skeleton
- C07C323/66—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and sulfur atoms, not being part of thio groups, bound to the same carbon skeleton containing sulfur atoms of sulfo, esterified sulfo or halosulfonyl groups, bound to the carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/001—Phase modulating patterns, e.g. refractive index patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
- Materials For Photolithography (AREA)
- Nitrogen Condensed Heterocyclic Rings (AREA)
- Agricultural Chemicals And Associated Chemicals (AREA)
- Optical Filters (AREA)
- Heterocyclic Compounds Containing Sulfur Atoms (AREA)
- Indole Compounds (AREA)
- Hydrogenated Pyridines (AREA)
- Detergent Compositions (AREA)
Abstract
"DERIVADOS DE SULFONATO E O USO DESTES COMO áCIDOS LATENTES". A presente invenção refere-se a composições fotorresistentes quimicamente amplificadas compreendendo, (a) um composto que cura sob a ação de um ácido ou um composto cuja solubilidade é aumentada sob a ação de um ácido; e (b) um composto da fórmula Ia, Ib, IIa, IIb, IIIa, IIIb, IVa, IVb, Va, Vb ou Vla (Vla), em que n é 1 ou 2; m é 0 ou 1; X~ 0~ é -[CH~ 2~]~ h~-X ou -CH=CH~ 2~; h é 2, 3, 4, 5 ou 6; R~ 1~, quando n for 1, é, por exemplo, fenila opcionalmente substituída, naftila, antracila, fenantrila ou heteroarila; R~ 1~, quando n for 2, é,, por exemplo, fenileno ou naftileno opcionalmente substituído; R~ 2~, por exemplo, tem um dos significados de R~ 1~; X é,, por exemplo, -OR~ 20~, NR~ 21~R~ 22~ -SR~ 23~; X<39> é _x~ 1~_A~ 3~_X~ 2~_ ; São, por exemplo, -O-, -S- ou uma ligação direta; A~ 3~ é,, por exemplo, fenileno; R~ 3~ tem, por exemplo, um dos significados dados para R~ 1~; R~ 4~ tem, por exemplo, um dos significados dados para R~ 2~; R~ 5~ e R~ 6~, por exemplo, são hidrogênio; G i.a. é -S- ou -O-; R~ 7~, quando n for 1, por exemplo, é fenila, opcionalmente substituída, quando n for 2, é,, por exemplo, fenileno; R~ 8~ e R~ 9~, por exemplo, é C~ 1~-C~ 18~ alquila; R~ 10~ tem um dos significados dados para R~ 7~; R~ 11~ i.a. é C~ 1~-C~ 18~alquila; R~ 12~, R~ 13~, R~ 14~, R~ 15~ R~ 16~, R~ 17~ e R~ 18~, por exemplo, são hidrogênio ou C~ 1~-C~ 18~ alquila; R~ 20~, R~ 21~, R22 e R~ 23~ i.a. são fenila ou C~ 1~-C~ 18~alquila; dão alta resolução com bom perfil de resistentes.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP02405082 | 2002-02-06 | ||
| PCT/EP2003/000821 WO2003067332A2 (en) | 2002-02-06 | 2003-01-28 | Sulfonate derivatives and the use therof as latent acids |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BR0307501A true BR0307501A (pt) | 2004-12-07 |
Family
ID=27675790
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR0307501-0A BR0307501A (pt) | 2002-02-06 | 2003-01-28 | Derivados de sulfonato e o uso destes como ácidos latentes |
Country Status (11)
| Country | Link |
|---|---|
| US (2) | US7326511B2 (pt) |
| EP (1) | EP1472576B1 (pt) |
| JP (1) | JP2005517026A (pt) |
| KR (1) | KR20040089607A (pt) |
| CN (1) | CN100475798C (pt) |
| AU (1) | AU2003206787A1 (pt) |
| BR (1) | BR0307501A (pt) |
| CA (1) | CA2474532A1 (pt) |
| MX (1) | MXPA04006581A (pt) |
| TW (1) | TWI288859B (pt) |
| WO (1) | WO2003067332A2 (pt) |
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| CA2511979A1 (en) * | 2003-02-19 | 2004-09-02 | Akira Matsumoto | Halogenated oxime derivatives and the use thereof as latent acids |
| KR101193824B1 (ko) * | 2004-07-20 | 2012-10-24 | 시바 홀딩 인크 | 옥심 유도체 및 잠산으로서의 이의 용도 |
| WO2006046398A1 (ja) * | 2004-10-29 | 2006-05-04 | Nissan Chemical Industries, Ltd. | 光酸発生剤を含む染料含有レジスト組成物及びそれを用いるカラーフィルター |
| US7183036B2 (en) * | 2004-11-12 | 2007-02-27 | International Business Machines Corporation | Low activation energy positive resist |
| JP4484681B2 (ja) * | 2004-12-03 | 2010-06-16 | 富士フイルム株式会社 | 感光性組成物及び該感光性組成物を用いたパターン形成方法 |
| JP4780586B2 (ja) * | 2006-05-08 | 2011-09-28 | 旭化成イーマテリアルズ株式会社 | ポジ型感光性樹脂組成物 |
| WO2007147782A2 (en) * | 2006-06-20 | 2007-12-27 | Ciba Holding Inc. | Oxime sulfonates and the use therof as latent acids |
| US8049186B2 (en) * | 2006-08-24 | 2011-11-01 | Basf Se | UV-dosis indicators |
| JP4866783B2 (ja) * | 2007-04-27 | 2012-02-01 | 東京応化工業株式会社 | レジスト組成物およびレジストパターン形成方法 |
| GB2450975B (en) | 2007-07-12 | 2010-02-24 | Ciba Holding Inc | Yellow radiation curing inks |
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| TW201016651A (en) * | 2008-07-28 | 2010-05-01 | Sumitomo Chemical Co | Oxime compound and resist composition containing the same |
| KR20110134452A (ko) * | 2009-03-06 | 2011-12-14 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 전기활성 층을 형성하기 위한 방법 |
| KR20110137821A (ko) | 2009-03-30 | 2011-12-23 | 바스프 에스이 | Uv-조사량 인디케이터 필름 |
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| JP5840146B2 (ja) * | 2011-01-17 | 2016-01-06 | 株式会社クラレ | ビニルスルホン酸エステル誘導体、高分子化合物およびフォトレジスト組成物 |
| US9145383B2 (en) | 2012-08-10 | 2015-09-29 | Hallstar Innovations Corp. | Compositions, apparatus, systems, and methods for resolving electronic excited states |
| WO2014025370A1 (en) | 2012-08-10 | 2014-02-13 | Hallstar Innovations Corp. | Tricyclic energy quencher compounds for reducing singlet oxygen generation |
| US9125829B2 (en) | 2012-08-17 | 2015-09-08 | Hallstar Innovations Corp. | Method of photostabilizing UV absorbers, particularly dibenzyolmethane derivatives, e.g., Avobenzone, with cyano-containing fused tricyclic compounds |
| JP2015147925A (ja) * | 2014-01-10 | 2015-08-20 | 住友化学株式会社 | 樹脂及びレジスト組成物 |
| JP6904662B2 (ja) * | 2016-01-29 | 2021-07-21 | 株式会社アドテックエンジニアリング | 露光装置 |
| US9950999B2 (en) | 2016-08-12 | 2018-04-24 | International Business Machines Corporation | Non-ionic low diffusing photo-acid generators |
| EP3680241A1 (en) | 2017-03-20 | 2020-07-15 | Forma Therapeutics, Inc. | Pyrrolopyrrole compositions as pyruvate kinase (pkr) activators |
| WO2020061255A1 (en) | 2018-09-19 | 2020-03-26 | Forma Therapeutics, Inc. | Activating pyruvate kinase r |
| US10675274B2 (en) | 2018-09-19 | 2020-06-09 | Forma Therapeutics, Inc. | Activating pyruvate kinase R |
| HUE072832T2 (hu) | 2019-09-19 | 2025-12-28 | Novo Nordisk Healthcare Ag | Piruvát kináz R-t (PKR) aktiváló készítmények |
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| JP7041201B2 (ja) * | 2020-06-30 | 2022-03-23 | 株式会社アドテックエンジニアリング | 露光方法 |
| US12128035B2 (en) | 2021-03-19 | 2024-10-29 | Novo Nordisk Health Care Ag | Activating pyruvate kinase R |
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| DE69821049T2 (de) | 1997-05-09 | 2004-10-21 | Fuji Photo Film Co Ltd | Positiv arbeitende lichtempfindliche Zusammensetzung |
| EP0878738B1 (en) | 1997-05-12 | 2002-01-09 | Fuji Photo Film Co., Ltd. | Positive resist composition |
| TW550439B (en) | 1997-07-01 | 2003-09-01 | Ciba Sc Holding Ag | New oxime sulfonates as latent acids and compositions and photoresists comprising said oxime sulfonates |
| TW575792B (en) | 1998-08-19 | 2004-02-11 | Ciba Sc Holding Ag | New unsaturated oxime derivatives and the use thereof as latent acids |
| SG78412A1 (en) * | 1999-03-31 | 2001-02-20 | Ciba Sc Holding Ag | Oxime derivatives and the use thereof as latent acids |
| NL1014545C2 (nl) | 1999-03-31 | 2002-02-26 | Ciba Sc Holding Ag | Oxim-derivaten en de toepassing daarvan als latente zuren. |
| TWI272451B (en) | 2000-09-25 | 2007-02-01 | Ciba Sc Holding Ag | Chemically amplified photoresist composition, process for preparation of a photoresist, and use of said chemically amplified photoresist composition |
| JP4210439B2 (ja) * | 2001-04-05 | 2009-01-21 | 富士フイルム株式会社 | ポジ型フォトレジスト組成物 |
| WO2002098870A1 (en) * | 2001-06-01 | 2002-12-12 | Ciba Specialty Chemicals Holding Inc. | Substituted oxime derivatives and the use thereof as latent acids |
| JP2003182218A (ja) * | 2001-12-13 | 2003-07-03 | Fuji Photo Film Co Ltd | 感熱記録材料 |
-
2003
- 2003-01-28 EP EP03704479.9A patent/EP1472576B1/en not_active Expired - Lifetime
- 2003-01-28 BR BR0307501-0A patent/BR0307501A/pt not_active Application Discontinuation
- 2003-01-28 KR KR10-2004-7012252A patent/KR20040089607A/ko not_active Ceased
- 2003-01-28 US US10/495,710 patent/US7326511B2/en not_active Expired - Fee Related
- 2003-01-28 JP JP2003566624A patent/JP2005517026A/ja active Pending
- 2003-01-28 AU AU2003206787A patent/AU2003206787A1/en not_active Abandoned
- 2003-01-28 CA CA002474532A patent/CA2474532A1/en not_active Abandoned
- 2003-01-28 CN CNB038033054A patent/CN100475798C/zh not_active Expired - Fee Related
- 2003-01-28 MX MXPA04006581A patent/MXPA04006581A/es not_active Application Discontinuation
- 2003-01-28 WO PCT/EP2003/000821 patent/WO2003067332A2/en not_active Ceased
- 2003-01-30 TW TW092102265A patent/TWI288859B/zh not_active IP Right Cessation
-
2007
- 2007-12-04 US US11/999,116 patent/US20080286693A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| TW200302952A (en) | 2003-08-16 |
| EP1472576A2 (en) | 2004-11-03 |
| US7326511B2 (en) | 2008-02-05 |
| KR20040089607A (ko) | 2004-10-21 |
| WO2003067332A2 (en) | 2003-08-14 |
| AU2003206787A1 (en) | 2003-09-02 |
| CA2474532A1 (en) | 2003-08-14 |
| WO2003067332A3 (en) | 2003-12-24 |
| EP1472576B1 (en) | 2013-04-24 |
| JP2005517026A (ja) | 2005-06-09 |
| US20080286693A1 (en) | 2008-11-20 |
| AU2003206787A8 (en) | 2003-09-02 |
| CN1628268A (zh) | 2005-06-15 |
| US20050153244A1 (en) | 2005-07-14 |
| CN100475798C (zh) | 2009-04-08 |
| TWI288859B (en) | 2007-10-21 |
| MXPA04006581A (es) | 2004-10-04 |
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| B11Y | Definitive dismissal - extension of time limit for request of examination expired [chapter 11.1.1 patent gazette] |